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    • 6. 发明授权
    • Current limiting device
    • 限流装置
    • US5614881A
    • 1997-03-25
    • US514076
    • 1995-08-11
    • Anil R. DuggalLionel M. LevinsonHarold J. PatchenLarry N. Lewis
    • Anil R. DuggalLionel M. LevinsonHarold J. PatchenLarry N. Lewis
    • H01C7/02H01C7/12H01H9/46H01H87/00H02H9/02H01C7/10
    • H01H9/465H01C7/027H01C7/12H02H9/026H01H2033/163
    • A current limiting device utilizing an electrically conductive composite material and an inhomogeneous distribution of resistance structure is disclosed. The inhomogeneous distribution is typically chosen so that at least one selected thin layer of the current limiting device has much higher resistance than the rest of the current limiting device. In the actual device, pressure is typically exerted on the composite material in a direction normal to the selected thin layer. During a short-circuit, it is believed that adiabatic resistive heating of this selected thin layer is followed by rapid thermal expansion which leads to either a partial or complete physical separation of the current limiting device at the selected thin layer which produces a higher over-all device resistance to electric current flow. Thus the current limiting device limits the flow of current through the short-circuited current path. When the short-circuit is cleared, the current limiting device regains its low resistance state allowing electrical current to flow normally. The current limiting of the present invention is reusable for many such short circuit conditions.
    • 公开了一种使用导电复合材料和电阻结构不均匀分布的限流装置。 通常选择不均匀分布,使得限流装置的至少一个选定的薄层比电流限制装置的其余部分具有高得多的电阻。 在实际的装置中,通常在垂直于所选薄层的方向上对复合材料施加压力。 在短路期间,相信该选择的薄层的绝热电阻加热之后是快速热膨胀,其导致在所选择的薄层处限流器件的部分或完全物理分离,其产生较高的过电压, 所有器件阻抗电流流动。 因此,限流装置限制了通过短路电流路径的电流流动。 当短路被清除时,限流装置恢复其低电阻状态,允许电流正常流动。 本发明的电流限制对于许多这样的短路条件是可重用的。
    • 9. 发明授权
    • Conversion of doped polycrystalline material to single crystal material
    • 掺杂多晶材料转化为单晶材料
    • US5588992A
    • 1996-12-31
    • US552700
    • 1995-11-03
    • Curtis E. ScottMary Sue KaliszewskiLionel M. Levinson
    • Curtis E. ScottMary Sue KaliszewskiLionel M. Levinson
    • C30B1/02C30B1/00C30B29/20C30B1/06
    • C30B1/00C30B29/20
    • A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
    • 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤:用转化增强掺杂剂掺杂多晶陶瓷材料,然后在所选择的温度下加热多晶体一段足以将多晶体转变的选定时间 到单晶。 所选择的温度小于多晶材料的熔化温度并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝(蓝宝石)时,转化增强掺杂剂的实例包括具有+3价的阳离子,例如铬,镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分,使得加热掺杂的多晶体导致第一部分的转化 到单晶结构,第二部分保留多晶结构。