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1. 发明申请

US20130181191A1 ELECTRONIC DEVICES INCLUDING BIO-POLYMERIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：包括生物聚合材料的电子器件及其制造方法
公开(公告)号：US20130181191A1
公开(公告)日：2013-07-18
申请号：US13485968
申请日：2012-06-01
申请人： Jenn-Chang Hwang , Chao-Ying Hsieh , Lung-Kai Mao , Chun-Yi Lee , Li-Shiuan Tsai , Cheng-Lung Tsai , Wei-Cheng Chung , Ping-Chiang Lyu
发明人： Jenn-Chang Hwang , Chao-Ying Hsieh , Lung-Kai Mao , Chun-Yi Lee , Li-Shiuan Tsai , Cheng-Lung Tsai , Wei-Cheng Chung , Ping-Chiang Lyu
IPC分类号： H01L51/10 , H01L21/02
CPC分类号： H01L51/0093 , B82Y10/00 , H01L51/052 , H01L51/0545
摘要： An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor.
摘要翻译：公开了一种包括生物聚合物材料的电子设备及其制造方法。本发明的电子器件包括：衬底; 设置在所述基板上的第一电极; 设置在所述第一电极上的生物聚合物层，其中所述生物聚合物材料选自由羊毛角蛋白，胶原水解产物，明胶，乳清蛋白和羟丙基甲基纤维素组成的组; 以及设置在所述生物聚合物材料层上的第二电极。本发明适用于有机薄膜晶体管，有机浮栅存储器或金属 - 绝缘体 - 金属电容器等各种电子器件。

2. 发明申请

US20120175602A1 N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME 有权
标题翻译： N型有机薄膜晶体管，AMBIPOLAR场效应晶体管及其制造方法
公开(公告)号：US20120175602A1
公开(公告)日：2012-07-12
申请号：US13425284
申请日：2012-03-20
申请人： Jenn-Chang HWANG , Li-Shiuan TSAI , Chun-Yi LEE , Cheng-Lun TSAI
发明人： Jenn-Chang HWANG , Li-Shiuan TSAI , Chun-Yi LEE , Cheng-Lun TSAI
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0055 , B82Y10/00 , H01L28/40 , H01L51/0046 , H01L51/0053 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0562
摘要： An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.
摘要翻译：公开了一种N型有机薄膜晶体管，双极场效应晶体管及其制造方法。本发明的N型有机薄膜晶体管包括：基板; 位于基板上的栅电极; 覆盖栅电极的栅极绝缘层，栅绝缘层由丝蛋白制成; 位于栅极绝缘层上的缓冲层，缓冲层由并五苯制成; 位于缓冲层上的N型有机半导体层; 以及源极和漏极，其中所述N型有机半导体层，所述缓冲层，所述源极和漏极被设置在所述栅极介电层上。

3. 发明申请

US20110086467A1 Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer 有权
标题翻译：制造有机薄膜晶体管的方法和栅极绝缘层的表面处理方法
公开(公告)号：US20110086467A1
公开(公告)日：2011-04-14
申请号：US12656331
申请日：2010-01-26
申请人： Cheng Wei Chou , Hsiano Wen Zan , Jenn-Chang Hwang , Chung Hwa Wang , Li Shiuan Tsai , Wen Chieh Wang
发明人： Cheng Wei Chou , Hsiano Wen Zan , Jenn-Chang Hwang , Chung Hwa Wang , Li Shiuan Tsai , Wen Chieh Wang
IPC分类号： H01L51/40
CPC分类号： H01L51/001 , H01L51/0097 , H01L51/0545
摘要： A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed.
摘要翻译：公开了一种制造有机薄膜晶体管的方法，其包括以下步骤：（S1）在基板上形成栅电极; （S2），在所述栅电极上形成栅极绝缘层; （S3）在所述栅极绝缘层的表面上提供气体以在所述栅极绝缘层的表面上形成疏水性分子; （S4）在其上具有疏水分子的栅绝缘层上形成有机半导体层，源电极和漏电极，其中步骤（S3）的气体是选自卤素取代的烃，未取代的烃，及其混合物。本发明的方法利用包含碳或氟原子的气体在栅极绝缘层的表面上进行表面处理，因此可以提高栅极绝缘层表面的疏水性，并且可以使OTFT的电性能改进。此外，公开了一种用于栅绝缘层的表面处理方法。

4. 发明授权

US08664648B2 N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same 有权
标题翻译： N型有机薄膜晶体管，双极场效应晶体管及其制造方法
公开(公告)号：US08664648B2
公开(公告)日：2014-03-04
申请号：US13425284
申请日：2012-03-20
申请人： Jenn-Chang Hwang , Li-Shiuan Tsai , Chun-Yi Lee , Cheng-Lun Tsai
发明人： Jenn-Chang Hwang , Li-Shiuan Tsai , Chun-Yi Lee , Cheng-Lun Tsai
IPC分类号： H01L35/24
CPC分类号： H01L51/0055 , B82Y10/00 , H01L28/40 , H01L51/0046 , H01L51/0053 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0562
摘要： An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.
摘要翻译：公开了一种N型有机薄膜晶体管，双极场效应晶体管及其制造方法。本发明的N型有机薄膜晶体管包括：基板; 位于基板上的栅电极; 覆盖栅电极的栅极绝缘层，栅绝缘层由丝蛋白制成; 位于栅极绝缘层上的缓冲层，缓冲层由并五苯制成; 位于缓冲层上的N型有机半导体层; 以及源极和漏极，其中所述N型有机半导体层，所述缓冲层，所述源极和漏极被设置在所述栅极介电层上。

5. 发明授权

US08110433B2 Method of fabricating an organic thin film transistor and method of surface treatment for gate insulating layer 有权
标题翻译：制造有机薄膜晶体管的方法和栅极绝缘层的表面处理方法
公开(公告)号：US08110433B2
公开(公告)日：2012-02-07
申请号：US12656331
申请日：2010-01-26
申请人： Cheng Wei Chou , Hsiao Wen Zan , Jenn-Chang Hwang , Chung Hwa Wang , Li Shiuan Tsai , Wen Chieh Wang
发明人： Cheng Wei Chou , Hsiao Wen Zan , Jenn-Chang Hwang , Chung Hwa Wang , Li Shiuan Tsai , Wen Chieh Wang
IPC分类号： H01L21/40
CPC分类号： H01L51/001 , H01L51/0097 , H01L51/0545
摘要： A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed.
摘要翻译：公开了一种制造有机薄膜晶体管的方法，其包括以下步骤：（S1）在基板上形成栅电极; （S2），在所述栅电极上形成栅极绝缘层; （S3）在所述栅极绝缘层的表面上提供气体以在所述栅极绝缘层的表面上形成疏水性分子; （S4）在其上具有疏水分子的栅绝缘层上形成有机半导体层，源电极和漏电极，其中步骤（S3）的气体是选自卤素取代的烃，未取代的烃，及其混合物。本发明的方法利用包含碳或氟原子的气体在栅极绝缘层的表面上进行表面处理，因此可以提高栅极绝缘层表面的疏水性，并且可以使OTFT的电性能改进。此外，公开了一种用于栅绝缘层的表面处理方法。

6. 发明申请

US20130181192A1 ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有蛋白质的有机浮游闸门存储装置及其制造方法
公开(公告)号：US20130181192A1
公开(公告)日：2013-07-18
申请号：US13572997
申请日：2012-08-13
申请人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
发明人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0529 , B82Y10/00 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0554
摘要： An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer
摘要翻译：公开了一种具有蛋白质的有机浮栅存储器件及其制造方法。本发明的有机浮动栅极存储器件包括：衬底; 基板上的栅电极; 覆盖所述栅电极的栅介质层; 栅极电介质层上的浮栅; 覆盖浮栅的蛋白质介电层; 以及有机半导体层，源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述蛋白质介电层上方

7. 发明申请

US20130105204A1 CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电路板及其制造方法
公开(公告)号：US20130105204A1
公开(公告)日：2013-05-02
申请号：US13417869
申请日：2012-03-12
申请人： Jenn-Chang HWANG , Chao-Ying HSIEH , Chwung-Shan KOU , Chung-Hwa WANG , Li-Shiuan TSAI , Lung-Kai MAO , Shih-Jie JIAN , Jian-You LIN , Chun-Yi LEE
发明人： Jenn-Chang HWANG , Chao-Ying HSIEH , Chwung-Shan KOU , Chung-Hwa WANG , Li-Shiuan TSAI , Lung-Kai MAO , Shih-Jie JIAN , Jian-You LIN , Chun-Yi LEE
IPC分类号： H05K1/03 , H05K1/02 , H05K1/09 , H05K3/00
CPC分类号： H05K1/0346 , H05K1/0393 , H05K3/0041 , H05K3/4676 , H05K2203/178 , Y10T29/49124
摘要： A circuit board and a method for manufacturing the same are disclosed. The circuit board of the present invention comprises: a carrier board, wherein a first circuit layer is disposed on at least one surface of the carrier board, and the first circuit layer comprises plural conductive pads; a protein dielectric layer disposed on the surface of the carrier board and the first circuit layer, wherein the protein dielectric layer has plural openings to expose the conductive pads; and a second circuit layer disposed on a surface of the protein dielectric layer, wherein the second circuit layer comprises plural first conductive vias, and each first conductive via is correspondingly formed in the opening and electrically connects to the conductive pad.
摘要翻译：公开了一种电路板及其制造方法。本发明的电路板包括：承载板，其中第一电路层设置在载板的至少一个表面上，第一电路层包括多个导电焊盘; 设置在所述载体板和所述第一电路层的表面上的蛋白质电介质层，其中所述蛋白质介电层具有多个开口以暴露所述导电焊盘; 以及设置在所述蛋白质电介质层的表面上的第二电路层，其中所述第二电路层包括多个第一导电通孔，并且每个第一导电通孔相应地形成在所述开口中并且电连接到所述导电焊盘。

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