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1. 发明授权

US5667919A Attenuated phase shift mask and method of manufacture thereof 失效
标题翻译：衰减相移掩模及其制造方法
公开(公告)号：US5667919A
公开(公告)日：1997-09-16
申请号：US682458
申请日：1996-07-17
申请人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chin-Lung Lin
发明人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chin-Lung Lin
IPC分类号： G03F1/00 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , Y10T428/24868
摘要： An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a transparent substrate. Formed upon the transparent substrate is a tantalum-silicon oxide blanket semi-transparent shifter layer which has the formula,Ta.sub.x Si.sub.y O.sub.1-x-ywherein 0.1
摘要翻译：衰减相移掩模（PSM）空白和衰减的相移掩模（PSM），以及可以形成衰减的相移掩模（PSM）空白和衰减的相移掩模（PSM）的方法。为了形成衰减相移掩模（PSM）空白，首先提供透明衬底。形成在透明基板上的是具有以下分子式的钽 - 氧化硅覆盖层半透明移动层：在0.1

2. 发明授权

US5030295A Radiation resistant passivation of silicon solar cells 失效
标题翻译：硅太阳能电池的耐辐射钝化
公开(公告)号：US5030295A
公开(公告)日：1991-07-09
申请号：US478617
申请日：1990-02-12
申请人： Richard M. Swanson , Jon-Yiew Gan , Peter E. Gruenbaum
发明人： Richard M. Swanson , Jon-Yiew Gan , Peter E. Gruenbaum
IPC分类号： H01L31/0216 , H01L31/061
CPC分类号： H01L31/061 , H01L31/02167 , H01L31/02168 , H01L31/041 , Y02E10/50 , Y10S257/906 , Y10S438/958
摘要： The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.
摘要翻译：硅太阳能电池中的氧化硅钝化层和硅衬底的界面通过用未掺杂或掺杂磷的多晶硅层覆盖氧化硅钝化层来稳定。通过在磷掺杂多晶体的表面上沉积形成第二层氧化硅，并增强复合结构的抗反射特性。

3. 发明申请

US20090101202A1 METHOD OF FAST HYDROGEN PASSIVATION TO SOLAR CELLS MADE OF CRYSTALLINE SILICON 审中-公开
标题翻译：快速氢钝化到晶体硅太阳能电池的方法
公开(公告)号：US20090101202A1
公开(公告)日：2009-04-23
申请号：US11873423
申请日：2007-10-17
申请人： Wen-Ching Sun , Chien-Hsun Chen , Jon-Yiew Gan , Jenn-Chang Hwang , Chwung-Shan Kou , Chih-Wei Wang , Juan-You Lin
发明人： Wen-Ching Sun , Chien-Hsun Chen , Jon-Yiew Gan , Jenn-Chang Hwang , Chwung-Shan Kou , Chih-Wei Wang , Juan-You Lin
IPC分类号： H01L31/00
CPC分类号： H01L31/1868 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of improving efficiency of solar cells made of crystalline silicon, including monocrystalline silicon, multicrystalline silicon and polycrystalline silicon is provided. In the method, a negative bias pulse is applied to solar cells at a predetermined voltage, a predetermined frequency, and a predetermined pulse width while immersing the solar cells in a hydrogen plasma. Hydrogen ions are attracted and quickly implanted into the solar cells. Thus, the passivation of crystal defects in the solar cells can be realized in a short period. Meanwhile, the properties of an antireflection layer cannot be damaged as proper operating parameters are used. Consequently, the serious resistance of the solar cells can be significantly reduced and the filling factor increases as a result. Further, the short-circuit current and the open-circuit voltage can be increased. Therefore, the efficiency can be enhanced.
摘要翻译：提供了一种提高由晶体硅制成的太阳能电池的效率的方法，包括单晶硅，多晶硅和多晶硅。在该方法中，在将太阳能电池浸入氢等离子体的同时，以预定电压，预定频率和预定脉冲宽度向负载偏压脉冲施加负偏压脉冲。氢离子被吸引并迅速地植入到太阳能电池中。因此，可以在短时间内实现太阳能电池中的晶体缺陷的钝化。同时，由于使用适当的操作参数，抗反射层的性能不会被破坏。因此，可以显着降低太阳能电池的严重阻力，结果填充因素增加。此外，可以增加短路电流和开路电压。因此，可以提高效率。

4. 发明授权

US5981109A Using (LaNiO.sub.3) .sub.X (TiO.sup.2) .sub.1-X and (LaNiO.sub.3) .sub.X (Ta.sub.2 O.sub.5) .sub.1-X oxide absorption composites for attenuating phase shifting blanks and masks 失效
标题翻译：使用（LaNiO3）X（TiO2）1-X和（LaNiO3）X（Ta2O5）1-X氧化物吸收复合材料衰减相移毛坯和掩模
公开(公告)号：US5981109A
公开(公告)日：1999-11-09
申请号：US15242
申请日：1998-01-29
申请人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chao-Chen Cheng
发明人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chao-Chen Cheng
IPC分类号： G06F1/20 , G03F1/00 , G03F1/08 , G06F1/04 , H01L21/822 , H01L27/04 , G03F9/00
CPC分类号： G03F1/32
摘要： An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is either TiO.sub.2 or Ta.sub.2 O.sub.5. The first and second materials are combined to produce composites of either (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and either TiO.sub.2 or Ta.sub.2 O.sub.5 uses rf-magnetron sputtering to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x or (LaNiO.sub.3).sub.x (Ta.sub.2 O.sub.5).sub.1-x films on a transparent quartz substrate.
摘要翻译：使用组合具有高消光系数的第一材料和具有高折射率的第二材料的光学特性的衰减相移复合材料形成衰减相移光掩模。第一种材料是LaNiO3，第二种材料是TiO 2或Ta 2 O 5。将第一和第二材料组合以产生（LaNiO 3）x（TiO 2）1-x或（LaNiO 3）x（Ta 2 O 5）1-x的复合材料，以形成衰减相变坯料和掩模。 LaNiO 3和TiO 2或Ta 2 O 5的共沉积使用射频磁控溅射在透明石英衬底上形成（LaNiO 3）x（TiO 2）1-x或（LaNiO 3）x（Ta 2 O 5）1-x膜。

5. 发明申请

US20130181192A1 ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有蛋白质的有机浮游闸门存储装置及其制造方法
公开(公告)号：US20130181192A1
公开(公告)日：2013-07-18
申请号：US13572997
申请日：2012-08-13
申请人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
发明人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0529 , B82Y10/00 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0554
摘要： An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer
摘要翻译：公开了一种具有蛋白质的有机浮栅存储器件及其制造方法。本发明的有机浮动栅极存储器件包括：衬底; 基板上的栅电极; 覆盖所述栅电极的栅介质层; 栅极电介质层上的浮栅; 覆盖浮栅的蛋白质介电层; 以及有机半导体层，源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述蛋白质介电层上方

6. 发明授权

US5714285A Using (LaNiO.sub.3).sub.X (TiO.sub.2).sub.1-x oxide absorption composite for attenuating phase shifting blanks and masks 失效
标题翻译：使用（LaNiO3）X（TiO2）1-x氧化物吸收复合材料来衰减相移毛坯和掩模
公开(公告)号：US5714285A
公开(公告)日：1998-02-03
申请号：US682475
申请日：1996-07-17
申请人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chao-Chen Cheng
发明人： Chih-Chiang Tu , Jon-Yiew Gan , Tai-Bor Wu , Chao-Chen Cheng
IPC分类号： G06F1/20 , G03F1/00 , G03F1/32 , G06F1/04 , H01L21/822 , H01L27/04 , G03F9/00
CPC分类号： G03F1/32
摘要： An attenuating phase shifting photomask is formed using attenuating phase shifting composite material combining the optical properties of a first material having a high extinction coefficient and a second material having a high index of refraction. The first material is LaNiO.sub.3 and the second material is TiO.sub.2. The first and second materials are combined as a composite of (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x to form attenuating phase shifting blanks and masks. Co-deposition of LaNiO.sub.3 and TiO.sub.2 using rf magnetron sputtering is used to form the (LaNiO.sub.3).sub.x (TiO.sub.2).sub.1-x film on a transparent quartz substrate.
摘要翻译：使用组合具有高消光系数的第一材料和具有高折射率的第二材料的光学特性的衰减相移复合材料形成衰减相移光掩模。第一种材料是LaNiO3，第二种材料是TiO2。将第一和第二材料作为（LaNiO 3）x（TiO 2）1-x的复合物组合以形成衰减相变坯料和掩模。使用rf磁控溅射法共沉积LaNiO3和TiO2，在透明石英衬底上形成（LaNiO3）x（TiO2）1-x薄膜。

7. 发明授权

US5057439A Method of fabricating polysilicon emitters for solar cells 失效
标题翻译：制造太阳能电池用多晶硅发射极的方法
公开(公告)号：US5057439A
公开(公告)日：1991-10-15
申请号：US478616
申请日：1990-02-12
申请人： Richard M. Swanson , Jon-Yiew Gan
发明人： Richard M. Swanson , Jon-Yiew Gan
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Polysilicon contacts for silicon devices such as bipolar junction transistors and silicon solar cells are fabricated in a two step anneal process to improve contact resistance and emitter saturation current density. After a silicon oxide layer is formed on a surface of a silicon substrate, a plurality of openings are formed there through to expose a plurality of contact surfaces on the surface of the silicon substrate. A thin thermally grown silicon oxide layer is then formed on the contact surfaces after which an undoped layer of polysilicon material is formed over the silicon oxide layers. The structure is then annealed at approximately 1050.degree. C. to break the thermally grown silicon oxide layer. Thereafter, a first layer of doped glass is formed over the silicon oxide surface and selectively etched to remove the first layer of glass from a first group of contact surfaces. A second layer of doped glass is then formed over the first group of contact surfaces and over the first layer of doped glass. Thereafter, the silicon substrate is annealed at a temperature of approximately 900.degree. C. thereby driving in dopants from said first and second layers of glass into said polysilicon layer over said first and second groups of contact surfaces. Finally, the layers of glass are removed and the polysilicon layer is patterned to define first and second polysilicon contacts.
摘要翻译：在两步退火工艺中制造用于诸如双极结晶体管和硅太阳能电池的硅器件的多晶硅接触，以改善接触电阻和发射极饱和电流密度。在硅衬底的表面上形成氧化硅层之后，在其上形成多个开口以暴露硅衬底表面上的多个接触表面。然后在接触表面上形成薄的热生长氧化硅层，之后在氧化硅层上形成未掺杂的多晶硅材料层。然后将结构在约1050℃退火以破坏热生长的氧化硅层。此后，在氧化硅表面上形成第一层掺杂玻璃，并选择性地蚀刻以从第一组接触表面去除第一层玻璃。然后在第一组接触表面上并在第一掺杂玻璃层之上形成第二层掺杂玻璃。此后，硅衬底在大约900℃的温度下进行退火，从而将所述第一和第二层玻璃的掺杂剂驱动到所述第一和第二组接触表面上的所述多晶硅层中。最后，去除玻璃层，并且将多晶硅层图案化以限定第一和第二多晶硅接触。

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