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1. 发明申请

US20130105204A1 CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电路板及其制造方法
公开(公告)号：US20130105204A1
公开(公告)日：2013-05-02
申请号：US13417869
申请日：2012-03-12
申请人： Jenn-Chang HWANG , Chao-Ying HSIEH , Chwung-Shan KOU , Chung-Hwa WANG , Li-Shiuan TSAI , Lung-Kai MAO , Shih-Jie JIAN , Jian-You LIN , Chun-Yi LEE
发明人： Jenn-Chang HWANG , Chao-Ying HSIEH , Chwung-Shan KOU , Chung-Hwa WANG , Li-Shiuan TSAI , Lung-Kai MAO , Shih-Jie JIAN , Jian-You LIN , Chun-Yi LEE
IPC分类号： H05K1/03 , H05K1/02 , H05K1/09 , H05K3/00
CPC分类号： H05K1/0346 , H05K1/0393 , H05K3/0041 , H05K3/4676 , H05K2203/178 , Y10T29/49124
摘要： A circuit board and a method for manufacturing the same are disclosed. The circuit board of the present invention comprises: a carrier board, wherein a first circuit layer is disposed on at least one surface of the carrier board, and the first circuit layer comprises plural conductive pads; a protein dielectric layer disposed on the surface of the carrier board and the first circuit layer, wherein the protein dielectric layer has plural openings to expose the conductive pads; and a second circuit layer disposed on a surface of the protein dielectric layer, wherein the second circuit layer comprises plural first conductive vias, and each first conductive via is correspondingly formed in the opening and electrically connects to the conductive pad.
摘要翻译：公开了一种电路板及其制造方法。本发明的电路板包括：承载板，其中第一电路层设置在载板的至少一个表面上，第一电路层包括多个导电焊盘; 设置在所述载体板和所述第一电路层的表面上的蛋白质电介质层，其中所述蛋白质介电层具有多个开口以暴露所述导电焊盘; 以及设置在所述蛋白质电介质层的表面上的第二电路层，其中所述第二电路层包括多个第一导电通孔，并且每个第一导电通孔相应地形成在所述开口中并且电连接到所述导电焊盘。

2. 发明授权

US08129716B2 OTFT and MIM capacitor using silk protein as dielectric material and methods for manufacturing the same 有权
标题翻译：使用丝蛋白作为介电材料的OTFT和MIM电容器及其制造方法
公开(公告)号：US08129716B2
公开(公告)日：2012-03-06
申请号：US12761008
申请日：2010-04-15
申请人： Jenn-Chang Hwang , Chung Hwa Wang , Chao Ying Hsieh
发明人： Jenn-Chang Hwang , Chung Hwa Wang , Chao Ying Hsieh
IPC分类号： H01L21/00 , H01L51/30
CPC分类号： H01L51/052 , B82Y10/00 , H01L28/40 , H01L51/0093 , H01L51/0545 , Y10T29/435
摘要： An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer.
摘要翻译：公开了使用丝蛋白作为介电材料的有机薄膜晶体管（OTFT）和金属 - 绝缘体 - 金属（MIM）电容器及其制造方法。本发明的OTFT包括：基板; 设置在所述基板上的栅电极; 包含丝蛋白的栅绝缘层，其设置在所述基板上并覆盖所述栅电极; 有机半导体层; 以及源电极和漏电极，其中所述有机半导体层，所述源电极和所述漏电极设置在所述栅绝缘层上。

3. 发明申请

US20100230662A1 Organic Thin Film Transistor, Method of Fabricating the Same, and Gate Insulating Layer Used in the Same 有权
标题翻译：有机薄膜晶体管及其制造方法及其使用的栅极绝缘层
公开(公告)号：US20100230662A1
公开(公告)日：2010-09-16
申请号：US12585422
申请日：2009-09-15
申请人： Sheng-Wei Chen , Chung--Hua Wang , Jenn-Chang Hwang
发明人： Sheng-Wei Chen , Chung--Hua Wang , Jenn-Chang Hwang
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0516 , H01L51/0533
摘要： An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.
摘要翻译：公开了一种有机薄膜晶体管，其包括用作栅极绝缘层的唑类金属络合物。制造自组装栅极绝缘层的方法是水溶性处理方法，其能够在水性溶液中在图案化栅电极上自形成唑类金属络合物，并且用作栅极绝缘层。本发明的有机薄膜晶体管（OTFT）包括在栅极绝缘层中使用的唑类金属络合物，因此可以以简单，快速，容易的方式制造大量且成本低的方法。

4. 发明申请

US20060104885A1 Vertical aligned nano-scale diamond structure and process for fabricating the same 失效
公开(公告)号：US20060104885A1
公开(公告)日：2006-05-18
申请号：US11068254
申请日：2005-02-28
申请人： Ya-Ko Chih , Jenn-Chang Hwang , Chwang-Shan Kou , Da Yao , Chien-Hsun Chen , An-Ping Lee , Chi-Ming Hung
发明人： Ya-Ko Chih , Jenn-Chang Hwang , Chwang-Shan Kou , Da Yao , Chien-Hsun Chen , An-Ping Lee , Chi-Ming Hung
IPC分类号： B01J3/06
CPC分类号： C30B29/605 , B82Y30/00 , C30B25/105 , Y10T428/30
摘要： A vertical aligned nano-scale diamond structure comprising diamond nanotip or nanotube is provided. More particularly, apparatus and method are disclosed for depositing such diamond structure on a rugged polycrystalline substrate.

5. 发明申请

US20060091383A1 SEMICONDUCTOR STRUCTURE AND TESTING METHOD THEREOF 审中-公开
标题翻译：半导体结构及其测试方法
公开(公告)号：US20060091383A1
公开(公告)日：2006-05-04
申请号：US11160689
申请日：2005-07-06
申请人： Kun-Fu Chuang , Fu-Chien Chiu , Ruey-Way Lin , Jenn-Chang Hwang
发明人： Kun-Fu Chuang , Fu-Chien Chiu , Ruey-Way Lin , Jenn-Chang Hwang
IPC分类号： H01L23/58
CPC分类号： G01R31/2858 , H01L22/10
摘要： A semiconductor structure and a testing method thereof are provided. The semiconductor structure comprises a substrate, a well, an isothermal heating layer, a first dielectric layer, an interconnection material layer and a second dielectric layer. Wherein, the well is disposed in the substrate, the isothermal heating layer is disposed over the well, the first dielectric layer is disposed between the well and the isothermal heating layer, the interconnection material layer is disposed over the isothermal heating layer, and the second dielectric layer is disposed between the isothermal heating layer and the interconnection material layer. The isothermal heating layer is adapted for maintaining the interconnection metal layer at a predetermined testing temperature so that the testing result can be precise and the testing time can be reduced. Moreover, a low level current can be used as the testing current.
摘要翻译：提供了一种半导体结构及其测试方法。半导体结构包括基板，阱，等温加热层，第一介电层，互连材料层和第二介电层。其中，井设置在基板中，等温加热层设置在井上，第一介电层设置在井和等温加热层之间，互连材料层设置在等温加热层上，第二介质层设置在等温加热层上，介电层设置在等温加热层和互连材料层之间。等温加热层适于将互连金属层保持在预定的测试温度，使得测试结果可以精确并且可以减少测试时间。此外，可以使用低电平电流作为测试电流。

6. 发明申请

US20130181192A1 ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有蛋白质的有机浮游闸门存储装置及其制造方法
公开(公告)号：US20130181192A1
公开(公告)日：2013-07-18
申请号：US13572997
申请日：2012-08-13
申请人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
发明人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0529 , B82Y10/00 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0554
摘要： An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer
摘要翻译：公开了一种具有蛋白质的有机浮栅存储器件及其制造方法。本发明的有机浮动栅极存储器件包括：衬底; 基板上的栅电极; 覆盖所述栅电极的栅介质层; 栅极电介质层上的浮栅; 覆盖浮栅的蛋白质介电层; 以及有机半导体层，源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述蛋白质介电层上方

7. 发明申请

US20110253984A1 ELECTRONIC GRADE SILK SOLUTION, OTFT AND MIM CAPACITOR WITH SILK PROTEIN AS INSULATING MATERIAL AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电子级丝光解决方案，OTFT和MIM电容器与丝素蛋白质作为绝缘材料及其制造方法
公开(公告)号：US20110253984A1
公开(公告)日：2011-10-20
申请号：US12841678
申请日：2010-07-22
申请人： Jenn-Chang HWANG , Chung Hwa Wang , Chao Ying Hsieh
发明人： Jenn-Chang HWANG , Chung Hwa Wang , Chao Ying Hsieh
IPC分类号： H01L51/30 , C07K14/435 , B05D5/12 , H01L51/42 , H01G4/14
CPC分类号： H01L51/052 , B82Y10/00 , H01L28/40 , H01L51/0093 , H01L51/0545
摘要： An electronic grade silk solution, an organic thin film transistor (OTFT) and a metal-insulator-metal capacitor with silk protein as the insulating material manufactured by use of the silk solution, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.
摘要翻译：公开了一种电子级丝绸溶液，有机薄膜晶体管（OTFT）以及使用丝绸溶液制造的丝蛋白作为绝缘材料的金属 - 绝缘体 - 金属电容器及其制造方法。本发明的OTFT包括：基板; 设置在基板上的栅极; 包含丝蛋白的栅极绝缘层，其设置在基板上并覆盖栅极; 有机半导体层; 以及源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述栅极绝缘层上。

8. 发明授权

US07763529B2 Method of fabricating silicon carbide (SiC) layer 有权
标题翻译：制造碳化硅（SiC）层的方法
公开(公告)号：US07763529B2
公开(公告)日：2010-07-27
申请号：US12585811
申请日：2009-09-25
申请人： Wei-Yu Chen , Jenn-Chang Hwang , Chih-Fang Huang , Chien-Cheng Chen
发明人： Wei-Yu Chen , Jenn-Chang Hwang , Chih-Fang Huang , Chien-Cheng Chen
IPC分类号： H01L21/20 , H01L21/36 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , B32B9/00 , B32B19/00
CPC分类号： H01L21/02529 , H01L21/02381 , H01L21/02447 , H01L21/0262 , H01L21/02658 , Y10S438/931
摘要： A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X ° C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y ° C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z ° C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W ° C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X
摘要翻译：公开了一种制造碳化硅（SiC）层的方法，其包括步骤：（S1）在X℃的温度下加热硅基衬底; （S2）在温度为Y℃的情况下用第一含烃气体对硅系基板进行渗碳，在硅系基板上形成碳化物层; （S3）在Z℃的温度下使其碳化物层退火硅基基板。和（S4）在温度为W℃的第二含烃气体和含硅气体的碳化物层上形成碳化硅层; 其中，X为800〜1200; Y为1100〜1400; Z为1200〜1500; W为1300〜1550; 和X

9. 发明申请

US20130181191A1 ELECTRONIC DEVICES INCLUDING BIO-POLYMERIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：包括生物聚合材料的电子器件及其制造方法
公开(公告)号：US20130181191A1
公开(公告)日：2013-07-18
申请号：US13485968
申请日：2012-06-01
申请人： Jenn-Chang Hwang , Chao-Ying Hsieh , Lung-Kai Mao , Chun-Yi Lee , Li-Shiuan Tsai , Cheng-Lung Tsai , Wei-Cheng Chung , Ping-Chiang Lyu
发明人： Jenn-Chang Hwang , Chao-Ying Hsieh , Lung-Kai Mao , Chun-Yi Lee , Li-Shiuan Tsai , Cheng-Lung Tsai , Wei-Cheng Chung , Ping-Chiang Lyu
IPC分类号： H01L51/10 , H01L21/02
CPC分类号： H01L51/0093 , B82Y10/00 , H01L51/052 , H01L51/0545
摘要： An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor.
摘要翻译：公开了一种包括生物聚合物材料的电子设备及其制造方法。本发明的电子器件包括：衬底; 设置在所述基板上的第一电极; 设置在所述第一电极上的生物聚合物层，其中所述生物聚合物材料选自由羊毛角蛋白，胶原水解产物，明胶，乳清蛋白和羟丙基甲基纤维素组成的组; 以及设置在所述生物聚合物材料层上的第二电极。本发明适用于有机薄膜晶体管，有机浮栅存储器或金属 - 绝缘体 - 金属电容器等各种电子器件。

10. 发明申请

US20120175602A1 N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME 有权
标题翻译： N型有机薄膜晶体管，AMBIPOLAR场效应晶体管及其制造方法
公开(公告)号：US20120175602A1
公开(公告)日：2012-07-12
申请号：US13425284
申请日：2012-03-20
申请人： Jenn-Chang HWANG , Li-Shiuan TSAI , Chun-Yi LEE , Cheng-Lun TSAI
发明人： Jenn-Chang HWANG , Li-Shiuan TSAI , Chun-Yi LEE , Cheng-Lun TSAI
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0055 , B82Y10/00 , H01L28/40 , H01L51/0046 , H01L51/0053 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0562
摘要： An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.
摘要翻译：公开了一种N型有机薄膜晶体管，双极场效应晶体管及其制造方法。本发明的N型有机薄膜晶体管包括：基板; 位于基板上的栅电极; 覆盖栅电极的栅极绝缘层，栅绝缘层由丝蛋白制成; 位于栅极绝缘层上的缓冲层，缓冲层由并五苯制成; 位于缓冲层上的N型有机半导体层; 以及源极和漏极，其中所述N型有机半导体层，所述缓冲层，所述源极和漏极被设置在所述栅极介电层上。

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