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1. 发明申请

US20120175602A1 N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME 有权
标题翻译： N型有机薄膜晶体管，AMBIPOLAR场效应晶体管及其制造方法
公开(公告)号：US20120175602A1
公开(公告)日：2012-07-12
申请号：US13425284
申请日：2012-03-20
申请人： Jenn-Chang HWANG , Li-Shiuan TSAI , Chun-Yi LEE , Cheng-Lun TSAI
发明人： Jenn-Chang HWANG , Li-Shiuan TSAI , Chun-Yi LEE , Cheng-Lun TSAI
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0055 , B82Y10/00 , H01L28/40 , H01L51/0046 , H01L51/0053 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0562
摘要： An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.
摘要翻译：公开了一种N型有机薄膜晶体管，双极场效应晶体管及其制造方法。本发明的N型有机薄膜晶体管包括：基板; 位于基板上的栅电极; 覆盖栅电极的栅极绝缘层，栅绝缘层由丝蛋白制成; 位于栅极绝缘层上的缓冲层，缓冲层由并五苯制成; 位于缓冲层上的N型有机半导体层; 以及源极和漏极，其中所述N型有机半导体层，所述缓冲层，所述源极和漏极被设置在所述栅极介电层上。

2. 发明申请

US20130105204A1 CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电路板及其制造方法
公开(公告)号：US20130105204A1
公开(公告)日：2013-05-02
申请号：US13417869
申请日：2012-03-12
申请人： Jenn-Chang HWANG , Chao-Ying HSIEH , Chwung-Shan KOU , Chung-Hwa WANG , Li-Shiuan TSAI , Lung-Kai MAO , Shih-Jie JIAN , Jian-You LIN , Chun-Yi LEE
发明人： Jenn-Chang HWANG , Chao-Ying HSIEH , Chwung-Shan KOU , Chung-Hwa WANG , Li-Shiuan TSAI , Lung-Kai MAO , Shih-Jie JIAN , Jian-You LIN , Chun-Yi LEE
IPC分类号： H05K1/03 , H05K1/02 , H05K1/09 , H05K3/00
CPC分类号： H05K1/0346 , H05K1/0393 , H05K3/0041 , H05K3/4676 , H05K2203/178 , Y10T29/49124
摘要： A circuit board and a method for manufacturing the same are disclosed. The circuit board of the present invention comprises: a carrier board, wherein a first circuit layer is disposed on at least one surface of the carrier board, and the first circuit layer comprises plural conductive pads; a protein dielectric layer disposed on the surface of the carrier board and the first circuit layer, wherein the protein dielectric layer has plural openings to expose the conductive pads; and a second circuit layer disposed on a surface of the protein dielectric layer, wherein the second circuit layer comprises plural first conductive vias, and each first conductive via is correspondingly formed in the opening and electrically connects to the conductive pad.
摘要翻译：公开了一种电路板及其制造方法。本发明的电路板包括：承载板，其中第一电路层设置在载板的至少一个表面上，第一电路层包括多个导电焊盘; 设置在所述载体板和所述第一电路层的表面上的蛋白质电介质层，其中所述蛋白质介电层具有多个开口以暴露所述导电焊盘; 以及设置在所述蛋白质电介质层的表面上的第二电路层，其中所述第二电路层包括多个第一导电通孔，并且每个第一导电通孔相应地形成在所述开口中并且电连接到所述导电焊盘。

3. 发明申请

US20130181192A1 ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有蛋白质的有机浮游闸门存储装置及其制造方法
公开(公告)号：US20130181192A1
公开(公告)日：2013-07-18
申请号：US13572997
申请日：2012-08-13
申请人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
发明人： Jenn-Chang HWANG , Li Shiuan TSAI , Jon-Yiew GAN
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0529 , B82Y10/00 , H01L51/0093 , H01L51/052 , H01L51/0545 , H01L51/0554
摘要： An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer
摘要翻译：公开了一种具有蛋白质的有机浮栅存储器件及其制造方法。本发明的有机浮动栅极存储器件包括：衬底; 基板上的栅电极; 覆盖所述栅电极的栅介质层; 栅极电介质层上的浮栅; 覆盖浮栅的蛋白质介电层; 以及有机半导体层，源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述蛋白质介电层上方

4. 发明申请

US20110253984A1 ELECTRONIC GRADE SILK SOLUTION, OTFT AND MIM CAPACITOR WITH SILK PROTEIN AS INSULATING MATERIAL AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电子级丝光解决方案，OTFT和MIM电容器与丝素蛋白质作为绝缘材料及其制造方法
公开(公告)号：US20110253984A1
公开(公告)日：2011-10-20
申请号：US12841678
申请日：2010-07-22
申请人： Jenn-Chang HWANG , Chung Hwa Wang , Chao Ying Hsieh
发明人： Jenn-Chang HWANG , Chung Hwa Wang , Chao Ying Hsieh
IPC分类号： H01L51/30 , C07K14/435 , B05D5/12 , H01L51/42 , H01G4/14
CPC分类号： H01L51/052 , B82Y10/00 , H01L28/40 , H01L51/0093 , H01L51/0545
摘要： An electronic grade silk solution, an organic thin film transistor (OTFT) and a metal-insulator-metal capacitor with silk protein as the insulating material manufactured by use of the silk solution, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.
摘要翻译：公开了一种电子级丝绸溶液，有机薄膜晶体管（OTFT）以及使用丝绸溶液制造的丝蛋白作为绝缘材料的金属 - 绝缘体 - 金属电容器及其制造方法。本发明的OTFT包括：基板; 设置在基板上的栅极; 包含丝蛋白的栅极绝缘层，其设置在基板上并覆盖栅极; 有机半导体层; 以及源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述栅极绝缘层上。

5. 发明申请

US20110297962A1 SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：肖特基二极管与金刚石棒及其制造方法
公开(公告)号：US20110297962A1
公开(公告)日：2011-12-08
申请号：US12847078
申请日：2010-07-30
申请人： Jenn-Chang HWANG , Chwung-Shan KOU , Jian-You LIN
发明人： Jenn-Chang HWANG , Chwung-Shan KOU , Jian-You LIN
IPC分类号： H01L29/872 , H01L21/04
CPC分类号： H01L29/872 , H01L29/1602 , H01L29/66143
摘要： The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.
摘要翻译：本发明涉及具有金刚石棒的肖特基二极管，其包括：在其上形成栅极层的衬底; 设置在所述栅极层上的图案化绝缘层，其中所述图案化绝缘层包括第一接触区域和第二接触区域; 设置在所述图案化绝缘层上的金刚石棒，其中所述金刚石棒的第一端连接到所述第一接触区域，所述金刚石棒的第二端连接到所述第二接触区域; 第一电极对应于图案化绝缘层的第一接触区域，并覆盖金刚石棒的第一端; 以及对应于图案化绝缘层的第二接触区域并覆盖金刚石棒的第二端的第二电极及其制造方法。

6. 发明申请

US20110291078A1 OTFT USING PAPER AS SUBSTRATE AND SILK PROTEIN AS INSULATING MATERIAL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：使用作为基材的纸和作为绝缘材料的丝素蛋白的OTFT及其制造方法
公开(公告)号：US20110291078A1
公开(公告)日：2011-12-01
申请号：US12842511
申请日：2010-07-23
申请人： Jenn-Chang HWANG , Chung Hwa Wang , Chao Ying Hsieh
发明人： Jenn-Chang HWANG , Chung Hwa Wang , Chao Ying Hsieh
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0093 , B82Y10/00 , H01L51/0003 , H01L51/0055 , H01L51/0097 , H01L51/052 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.
摘要翻译：公开了使用纸作为基材的有机薄膜晶体管（OTFT）和作为绝缘材料的丝蛋白及其制造方法。本发明的OTFT包括：纸基材; 设置在纸基材上的门; 含有丝蛋白的栅极绝缘层，其设置在纸基材上并覆盖栅极; 有机半导体层; 以及源极和漏极，其中所述有机半导体层，所述源极和漏极设置在所述栅极绝缘层上。

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