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    • 1. 发明授权
    • Floating piston valve of amplitude selective shock absorber
    • 振幅选择减震器浮动活塞阀
    • US08333270B2
    • 2012-12-18
    • US12503679
    • 2009-07-15
    • Young Chun JiKyung Won Park
    • Young Chun JiKyung Won Park
    • F16F9/34
    • F16F9/5126
    • A floating piston valve includes an annular valve body having a fluid passing hole formed therein, a pair of upper and lower valve discs respectively mounted on upper and lower sides of the valve body to generate damping force, a pair of upper and lower tripod type leaf valve springs respectively mounted on upper and lower sides of the upper and lower valve discs, and a pair of upper and lower coupling supports coupled to the valve body respectively at upper and lower sides of the upper and lower tripod type leaf valve springs. Each of the coupling supports includes an annular support section and a coupling section at least partially formed on an outer edge of the annular support section and is fastened to the valve body through a portion of an outer edge of the valve body.
    • 浮动活塞阀包括形成有流体通孔的环形阀体,分别安装在阀体的上侧和下侧以产生阻尼力的一对上下阀盘,一对上下三脚架型叶片 分别安装在上下阀盘的上侧和下侧的气门弹簧以及分别在上下三脚架型叶阀弹簧的上侧和下侧连接到阀体的一对上下联接支撑件。 每个联接支撑件包括环形支撑部分和至少部分地形成在环形支撑部分的外边缘上的联接部分,并且通过阀体的外边缘的一部分紧固到阀体。
    • 7. 发明授权
    • Method of forming isolation film for semiconductor devices
    • 形成半导体器件隔离膜的方法
    • US06258726B1
    • 2001-07-10
    • US09412888
    • 1999-10-05
    • Tai-Su ParkYu-gyun ShinHan-sin LeeKyung-won Park
    • Tai-Su ParkYu-gyun ShinHan-sin LeeKyung-won Park
    • H01L21302
    • H01L21/76224
    • A method of forming an isolation film forms a spacer for connecting the edge of an active region to the isolation film. The spacer is on the upper sidewall of a trench and smoothes the transition or step between the level of the isolation film and the level of the active region. Accordingly, a gate oxide film of a uniform thickness can be formed on the entire active region in a subsequent process, thus preventing degradation of the characteristics of the gate oxide film. The spacer can be formed using a sidewall spacer on the hard mask used for forming the trench. The sidewall spacer protects part of the isolation formed in the trench, and etching after removal of the sidewall spacer can round the protected portion to create the spacer. Furthermore, to dispel stresses and defects in the isolation film, annealing for densification of the isolation film can be performed at a high temperature such as about 1150° C. because the spacer mitigates the effects of shrinking or sagging of the isolation film.
    • 形成隔离膜的方法形成用于将有源区域的边缘连接到隔离膜的间隔物。 间隔物位于沟槽的上侧壁上,并平滑了隔离膜的电平与有源区的电平之间的转变或台阶。 因此,可以在随后的工艺中在整个有源区上形成均匀厚度的栅极氧化膜,从而防止栅极氧化膜的特性劣化。 间隔物可以使用用于形成沟槽的硬掩模上的侧壁间隔物形成。 侧壁间隔件保护形成在沟槽中的隔离部分,并且在去除侧壁间隔物之后的蚀刻可围绕被保护部分以形成隔离物。 此外,为了消除隔离膜中的应力和缺陷,隔离膜的致密化退火可以在诸如约1150℃的高温下进行,因为间隔物减轻了隔离膜的收缩或下垂的影响。