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1. 发明授权

US06914147B2 Polyalkylene oxide porogens having hyper-branches and low dielectric-constant insulators using them 失效
标题翻译：具有超分支的聚环氧烷致孔剂和使用它们的低介电常数绝缘体
公开(公告)号：US06914147B2
公开(公告)日：2005-07-05
申请号：US10118094
申请日：2002-04-09
申请人： Changjin Lee , Yongku Kang , Jong Goo Kang , Hee Jung Kim , Moon Young Jin , Sang Il Seok , Kookheon Char , Sang-Hyun Chu
发明人： Changjin Lee , Yongku Kang , Jong Goo Kang , Hee Jung Kim , Moon Young Jin , Sang Il Seok , Kookheon Char , Sang-Hyun Chu
IPC分类号： C08J9/02 , C07C41/03 , C07C43/23 , C07C67/08 , C07C68/00 , C07C69/708 , C07C69/74 , C07C69/76 , C07C69/96 , C07F7/21 , C08G65/26 , C08G65/329 , C08G65/331 , C08G65/332 , C08G65/337 , C08G83/00 , C08J9/26 , H01B3/18 , H01B3/46 , H01L21/312 , C07F7/04
CPC分类号： C09D183/04 , C08G65/3311 , C08G65/3322 , C08G65/337 , C08G83/003 , C08J9/26 , C08J2201/046 , C08J2379/08 , C08J2383/04 , H01B3/18 , H01B3/46
摘要： The present invention relates to polyalkylene oxide porogens having hyper-branches and low dielectric-constant insulators using them. More particularly, the present invention relates to polyalkylene oxide porogens having hyper-branches expressed by the following formula (1), where the polyalkylene oxide porogen has a center molecular (D) having branches (W), and low dielectric-constant insulators having nanopores prepared by coating a mixture of the porogen and a high heat-resistant resin such as polysilsesquioxane and thermal treating the coated substrate at a temperature effective to degrade the porogen. DY—W)l (1)
摘要翻译：本发明涉及具有超分支和使用它们的低介电常数绝缘体的聚环氧烷致孔剂。更具体地说，本发明涉及具有由下式（1）表示的超分支的聚环氧烷致孔剂，其中聚环氧烷致孔剂具有分枝（W）的中心分子（D）和具有纳米孔的低介电常数绝缘体通过涂覆致孔剂和高耐热树脂如聚倍半硅氧烷的混合物并在有效降解致孔剂的温度下热处理涂覆的基材来制备。 <？in-line-formula description =“In-line Formulas”end =“lead”？>DYW）（1）<？in-line-formula description =“In-line 公式“end =”tail“？>

2. 发明授权

US08847362B2 Structure of thin nitride film and formation method thereof 有权
标题翻译：薄氮化膜的结构及其形成方法
公开(公告)号：US08847362B2
公开(公告)日：2014-09-30
申请号：US13062557
申请日：2009-09-07
申请人： Euijoon Yoon , Kookheon Char , Jong Hak Kim , Sewon Oh , Heeje Woo
发明人： Euijoon Yoon , Kookheon Char , Jong Hak Kim , Sewon Oh , Heeje Woo
IPC分类号： H01L29/20 , H01L21/02 , H01L33/00
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.
摘要翻译：提供一种氮化物薄膜结构及其形成方法。如果氮化物薄膜形成在不是氮化物的衬底上，则衬底和氮化物薄膜之间的晶格常数差异会产生许多缺陷。此外，存在由于基板和氮化物薄膜之间的热膨胀系数的差异使基板翘曲的问题。为了解决这些问题，本发明提出了一种薄膜结构，其中在其上涂覆中空颗粒，即衬底上的中空结构，其上生长氮化物薄膜的方法和形成薄膜结构的方法。根据本发明，由于可以通过中空结构获得外延横向过度生长（ELO）效应，因此可以形成高质量的氮化物薄膜。由于调整薄膜结构中的折射率，所以在将薄膜结构体制造成诸如发光二极管（LED）的发光装置时，具有提高光提取效率的效果。此外，当基板的热膨胀系数大于氮化物薄膜的热膨胀系数时，氮化物薄膜的总应力根据氮化物薄膜中的中空结构的压缩而降低，使得还具有防止基材翘曲。

3. 发明授权

US08766315B2 Quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, light emitting device including the same, and fabrication method thereof 有权
标题翻译：量子点嵌段共聚物杂化物，其制造和分散方法，包括其的发光器件及其制造方法
公开(公告)号：US08766315B2
公开(公告)日：2014-07-01
申请号：US12886853
申请日：2010-09-21
申请人： Jong Hyuk Kang , Junghan Shin , Jae Byung Park , Dong-Hoon Lee , Kookheon Char , Seonghoon Lee , WanKi Bae , Jaehoon Lim
发明人： Jong Hyuk Kang , Junghan Shin , Jae Byung Park , Dong-Hoon Lee , Kookheon Char , Seonghoon Lee , WanKi Bae , Jaehoon Lim
IPC分类号： H01L33/00
CPC分类号： C09K11/025 , C08F8/06 , C09K11/08 , C08F116/34
摘要： Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.
摘要翻译：公开了量子点嵌段共聚物杂化物，其制造和分散方法，包括其的发光器件及其制造方法。量子点嵌段共聚物杂化物包括：量子点和围绕量子点的嵌段共聚物，其中嵌段共聚物具有包含硫（S）的官能团并与量子点形成化学键。

4. 发明申请

US20120315391A1 QUANTUM DOTS HAVING COMPOSITION GRADIENT SHELL STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有组成梯度结构及其制造方法的量子点
公开(公告)号：US20120315391A1
公开(公告)日：2012-12-13
申请号：US13589821
申请日：2012-08-20
申请人： Kookheon Char , Seonghoon Lee , Wan Ki Bae , Hyuck Hur
发明人： Kookheon Char , Seonghoon Lee , Wan Ki Bae , Hyuck Hur
IPC分类号： B05D7/00 , B82Y40/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C01B19/002 , C01B19/007 , C01G9/08 , C01G11/00 , C01G11/02 , C01P2004/03 , C01P2004/04 , C01P2004/84 , C01P2006/40 , C09K11/02 , C09K11/565 , C09K11/883 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L29/22 , Y10S438/962 , Y10S977/774
摘要： Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.
摘要翻译：提供了具有提高的发光效率和光学稳定性的逐渐组成梯度壳结构的量子点，以及以低成本在短时间内制造量子点的方法。在该方法中，可以使用半导体前体之间的反应性差异以低成本在短时间内制造量子点，这不同于在形成芯之后形成壳并进行清洁和再分散工艺的不经济和低效的常规方法。此外，芯的形成之后是形成具有组成梯度的壳。

5. 发明申请

US20110156214A1 STRUCTURE OF THIN NITRIDE FILM AND FORMATION METHOD THEREOF 有权
标题翻译：薄硝酸盐薄膜的结构及其形成方法
公开(公告)号：US20110156214A1
公开(公告)日：2011-06-30
申请号：US13062557
申请日：2009-09-07
申请人： Euijoon Yoon , Kookheon Char , Jong Hak Kim , Sewon Oh , Heeje Woo
发明人： Euijoon Yoon , Kookheon Char , Jong Hak Kim , Sewon Oh , Heeje Woo
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/12
摘要： Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.
摘要翻译：提供一种氮化物薄膜结构及其形成方法。如果氮化物薄膜形成在不是氮化物的衬底上，则衬底和氮化物薄膜之间的晶格常数差异会产生许多缺陷。此外，存在由于基板和氮化物薄膜之间的热膨胀系数的差异使基板翘曲的问题。为了解决这些问题，本发明提出了一种薄膜结构，其中在其上涂覆中空颗粒，即衬底上的中空结构，其上生长氮化物薄膜的方法和形成薄膜结构的方法。根据本发明，由于可以通过中空结构获得外延横向过度生长（ELO）效应，因此可以形成高质量的氮化物薄膜。由于调整薄膜结构中的折射率，所以在将薄膜结构体制造成诸如发光二极管（LED）的发光装置时，具有提高光提取效率的效果。此外，当基板的热膨胀系数大于氮化物薄膜的热膨胀系数时，氮化物薄膜的总应力根据氮化物薄膜中的中空结构的压缩而降低，使得还具有防止基材翘曲。

6. 发明申请

US20170271088A1 THREE-DIMENSIONAL ELECTRODE ON DYE-SENSITIZED SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170271088A1
公开(公告)日：2017-09-21
申请号：US15490518
申请日：2017-04-18
申请人： Kookheon Char , Sanghyuk Wooh , Yong Soo Kang , Hyunsik Yoon
发明人： Kookheon Char , Sanghyuk Wooh , Yong Soo Kang , Hyunsik Yoon
IPC分类号： H01G9/20
CPC分类号： H01G9/209 , H01G9/2031 , H01G9/2059 , Y02E10/542 , Y02P70/521
摘要： The present invention relates to a photoelectrode for a dye-sensitized solar cell including inorganic nanoparticles, wherein a three-dimensional pattern is formed on the surface of the photoelectrode. The three-dimensional photoelectrode for a dye-sensitized solar cell according to the present invention has a micrometer-sized pattern and thus exhibits an improved light absorption caused by a total reflection and a increased light path.

7. 发明授权

US08847201B2 Quantum dots having composition gradient shell structure and manufacturing method thereof 有权
标题翻译：具有组成梯度壳结构的量子点及其制造方法
公开(公告)号：US08847201B2
公开(公告)日：2014-09-30
申请号：US13589821
申请日：2012-08-20
申请人： Kookheon Char , Seong Hoon Lee , Wan Ki Bae , Hyuck Hur
发明人： Kookheon Char , Seong Hoon Lee , Wan Ki Bae , Hyuck Hur
IPC分类号： H01L29/06 , H01L31/00 , B82Y10/00 , C01B19/00 , B82Y30/00 , H01L29/22 , C09K11/88 , C01G9/08 , C09K11/02 , C09K11/56 , C01G11/00 , H01L29/12 , C01G11/02 , H01L21/02
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C01B19/002 , C01B19/007 , C01G9/08 , C01G11/00 , C01G11/02 , C01P2004/03 , C01P2004/04 , C01P2004/84 , C01P2006/40 , C09K11/02 , C09K11/565 , C09K11/883 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L29/22 , Y10S438/962 , Y10S977/774
摘要： Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.
摘要翻译：提供了具有提高的发光效率和光学稳定性的逐渐组成梯度壳结构的量子点，以及以低成本在短时间内制造量子点的方法。在该方法中，可以使用半导体前体之间的反应性差异以低成本在短时间内制造量子点，这不同于在形成芯之后形成壳并进行清洁和再分散工艺的不经济和低效的常规方法。此外，芯的形成之后是形成具有组成梯度的壳。

8. 发明申请

US20110227034A1 QUANTUM DOT-BLOCK COPOLYMER HYBRID, METHODS OF FABRICATING AND DISPERSING THE SAME, LIGHT EMITTING DEVICE INCLUDING THE SAME, AND FABRICATION METHOD THEREOF 有权
标题翻译：量子嵌段共聚物混合物，其制造和分散方法，包括其的发光装置及其制造方法
公开(公告)号：US20110227034A1
公开(公告)日：2011-09-22
申请号：US12886853
申请日：2010-09-21
申请人： Jong Hyuk KANG , Junghan SHIN , Jae Byung PARK , Dong-Hoon LEE , Kookheon CHAR , Seonghoon LEE , WanKi BAE , Jaehoon LIM
发明人： Jong Hyuk KANG , Junghan SHIN , Jae Byung PARK , Dong-Hoon LEE , Kookheon CHAR , Seonghoon LEE , WanKi BAE , Jaehoon LIM
IPC分类号： H01L33/06 , H01L29/66 , H01L21/20
CPC分类号： C09K11/025 , C08F8/06 , C09K11/08 , C08F116/34
摘要： Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.
摘要翻译：公开了量子点嵌段共聚物杂化物，其制造和分散方法，包括其的发光器件及其制造方法。量子点嵌段共聚物杂化物包括：量子点和围绕量子点的嵌段共聚物，其中嵌段共聚物具有包含硫（S）的官能团并与量子点形成化学键。

9. 发明申请

US20100140586A1 QUANTUM DOTS HAVING COMPOSITION GRADIENT SHELL STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有组成梯度结构及其制造方法的量子点
公开(公告)号：US20100140586A1
公开(公告)日：2010-06-10
申请号：US12442943
申请日：2007-09-21
申请人： Kookheon Char , Seonghoon Lee , Wan Ki Bae , Hyuck Hur
发明人： Kookheon Char , Seonghoon Lee , Wan Ki Bae , Hyuck Hur
IPC分类号： H01L29/12 , H01L21/36 , H01L21/06
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C01B19/002 , C01B19/007 , C01G9/08 , C01G11/00 , C01G11/02 , C01P2004/03 , C01P2004/04 , C01P2004/84 , C01P2006/40 , C09K11/02 , C09K11/565 , C09K11/883 , H01L21/02474 , H01L21/02477 , H01L21/0248 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L29/22 , Y10S438/962 , Y10S977/774
摘要： Provided are quantum dots having a gradual composition gradient shell structure which have an improvedluminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells areformed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient. Thus, even if the shells are formed to a large thickness, the lattice mismatch between cores and shells is relieved. Furthermore, on the basis of the funneling concept, electrons and holes generated in the shells are transferred to the cores to emit light, thereby obtaining a high luminous efficiency of 80% or more. The quantum dot structure is not limited to Group II-IV semiconductor quantum dots but can be applied to other semiconductors quantum dots, such as Group III-V semiconductors quantum dots and Group IV-IV semiconductors quantum dots. Also, the manufacturing method can be utilized in the development of semiconductor quantum dots having different physical properties, and in various other fields.
摘要翻译：提供了具有提高的发光效率和光学稳定性的逐渐组成梯度壳结构的量子点以及以低成本在短时间内制造量子点的方法。在该方法中，可以使用半导体前体之间的反应性差异以低成本在短时间内制造量子点，这不同于在形成核心并执行清洁和再分散工艺之后形成壳体的不经济和低效的常规方法。此外，芯的形成之后是形成具有组成梯度的壳。因此，即使壳体形成较大的厚度，也可以减轻芯部和壳体之间的晶格失配。此外，在漏斗观念的基础上，将壳中产生的电子和空穴转移到核发光，从而获得80％以上的高发光效率。量子点结构不限于II-IV族半导体量子点，而是可以应用于其他半导体量子点，例如III-V族半导体量子点和IV-IV族半导体量子点。此外，制造方法可以用于开发具有不同物理性质的半导体量子点以及各种其它领域。

10. 发明授权

US09086529B2 Optical film with partially coated structure array and manufacturing method thereof 有权
标题翻译：具有部分涂层结构阵列的光学膜及其制造方法
公开(公告)号：US09086529B2
公开(公告)日：2015-07-21
申请号：US13979874
申请日：2012-01-17
申请人： Kookheon Char , Hyunsik Yoon , Hong Hie Lee , Eun-Kyeong Bae
发明人： Kookheon Char , Hyunsik Yoon , Hong Hie Lee , Kahp-Yang Suh
IPC分类号： G02B27/10 , G02F1/03 , G02F1/133 , G09G3/34 , G03G13/00 , G02B5/04 , G02B5/18 , G02B27/22
CPC分类号： G02B5/045 , G02B5/1828 , G02B27/2242
摘要： The present invention relates to an optical film comprising a substrate on which an array of structures is formed, wherein a material having a different refractive index, absorbancy or reflectivity from that of a surface of the structures is partially coated on the surface of the structures, and a manufacturing method thereof. Specifically, the optical film according to one embodiment of the present invention may have a different transparency depending on the direction or can transmit light asymmetrically. Further, the optical film may be applicable to image devices, which need to change brightness or images depending on the angle of view or to display three-dimensional images.
摘要翻译：本发明涉及一种光学膜，其包括其上形成有结构阵列的基底，其中具有不同折射率，与该结构表面的吸收或反射率不同的材料部分地涂覆在结构的表面上，及其制造方法。具体而言，根据本发明的一个实施方式的光学膜可以根据方向具有不同的透明度，或者可以不对称地透射光。此外，光学膜可以应用于需要根据视角改变亮度或图像的图像装置或显示三维图像。

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