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    • 2. 发明授权
    • Structure of thin nitride film and formation method thereof
    • 薄氮化膜的结构及其形成方法
    • US08847362B2
    • 2014-09-30
    • US13062557
    • 2009-09-07
    • Euijoon YoonKookheon CharJong Hak KimSewon OhHeeje Woo
    • Euijoon YoonKookheon CharJong Hak KimSewon OhHeeje Woo
    • H01L29/20H01L21/02H01L33/00
    • H01L21/0237H01L21/02458H01L21/02505H01L21/02507H01L21/0254H01L21/02639H01L21/02647H01L33/007H01L33/12
    • Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.
    • 提供一种氮化物薄膜结构及其形成方法。 如果氮化物薄膜形成在不是氮化物的衬底上,则衬底和氮化物薄膜之间的晶格常数差异会产生许多缺陷。 此外,存在由于基板和氮化物薄膜之间的热膨胀系数的差异使基板翘曲的问题。 为了解决这些问题,本发明提出了一种薄膜结构,其中在其上涂覆中空颗粒,即衬底上的中空结构,其上生长氮化物薄膜的方法和形成薄膜结构的方法。 根据本发明,由于可以通过中空结构获得外延横向过度生长(ELO)效应,因此可以形成高质量的氮化物薄膜。 由于调整薄膜结构中的折射率,所以在将薄膜结构体制造成诸如发光二极管(LED)的发光装置时,具有提高光提取效率的效果。 此外,当基板的热膨胀系数大于氮化物薄膜的热膨胀系数时,氮化物薄膜的总应力根据氮化物薄膜中的中空结构的压缩而降低,使得还具有防止 基材翘曲。
    • 5. 发明申请
    • STRUCTURE OF THIN NITRIDE FILM AND FORMATION METHOD THEREOF
    • 薄硝酸盐薄膜的结构及其形成方法
    • US20110156214A1
    • 2011-06-30
    • US13062557
    • 2009-09-07
    • Euijoon YoonKookheon CharJong Hak KimSewon OhHeeje Woo
    • Euijoon YoonKookheon CharJong Hak KimSewon OhHeeje Woo
    • H01L29/20H01L21/20
    • H01L21/0237H01L21/02458H01L21/02505H01L21/02507H01L21/0254H01L21/02639H01L21/02647H01L33/007H01L33/12
    • Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.
    • 提供一种氮化物薄膜结构及其形成方法。 如果氮化物薄膜形成在不是氮化物的衬底上,则衬底和氮化物薄膜之间的晶格常数差异会产生许多缺陷。 此外,存在由于基板和氮化物薄膜之间的热膨胀系数的差异使基板翘曲的问题。 为了解决这些问题,本发明提出了一种薄膜结构,其中在其上涂覆中空颗粒,即衬底上的中空结构,其上生长氮化物薄膜的方法和形成薄膜结构的方法。 根据本发明,由于可以通过中空结构获得外延横向过度生长(ELO)效应,因此可以形成高质量的氮化物薄膜。 由于调整薄膜结构中的折射率,所以在将薄膜结构体制造成诸如发光二极管(LED)的发光装置时,具有提高光提取效率的效果。 此外,当基板的热膨胀系数大于氮化物薄膜的热膨胀系数时,氮化物薄膜的总应力根据氮化物薄膜中的中空结构的压缩而降低,使得还具有防止 基材翘曲。