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1. 发明授权

US08519504B2 Electrode for semiconductor chip and semiconductor chip with the electrode 有权
公开(公告)号：US08519504B2
公开(公告)日：2013-08-27
申请号：US12453238
申请日：2009-05-04
申请人： Kentaro Tada
发明人： Kentaro Tada
IPC分类号： H01L31/06
CPC分类号： H01L29/452 , H01L29/20 , H01L29/2003
摘要： In an n-type semiconductor layer that contains gallium (Ga), contact resistance is to be suppressed at a low level. An n-side electrode is provided on a surface of the n-type semiconductor layer containing Ga. The electrode includes a metal layer having a Ga content of equal to or more than 1 at % and equal to or less than 25 at %. The metal layer is disposed in contact with the n-type semiconductor layer.

2. 发明授权

US08228966B2 Semiconductor laser and method of manufacturing semiconductor laser 有权
标题翻译：半导体激光器及制造半导体激光器的方法
公开(公告)号：US08228966B2
公开(公告)日：2012-07-24
申请号：US12710607
申请日：2010-02-23
申请人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
发明人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
IPC分类号： H01S5/00
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/22 , H01S5/34313 , H01S5/34326
摘要： Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt
摘要翻译：提供了一种半导体激光器，其中（λa-λw）> 15（nm）和Lt <25（μm），其中λw是对应于设置在距离2内的位置的有源层的带隙的光的波长 μm，λa是与位于距离等于或大于（3/10）L的位置处的有源层的带隙对应的光的波长，并且<（7 / 10）L，谐振器长度为“L”，“Lt”为有源层的位置与光波长对应的带隙之间的过渡区域的长度的λw+ 2（nm）的波长的有源层的位置以及在谐振器方向上具有对应于λa-2（nm）的光波长的带隙的有源层的位置。

3. 发明申请

US20100034231A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20100034231A1
公开(公告)日：2010-02-11
申请号：US12535163
申请日：2009-08-04
申请人： Kazuhisa FUKUDA , Chiaki SASAOKA , Kentaro TADA , Toshiaki IGARASHI , Fumito MIYASAKA , Keiro KOMATSU
发明人： Kazuhisa FUKUDA , Chiaki SASAOKA , Kentaro TADA , Toshiaki IGARASHI , Fumito MIYASAKA , Keiro KOMATSU
IPC分类号： H01S5/028 , H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/0287 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is emitted, and formed of a single-layer or a multilayer dielectric film. Hydrogen concentration distribution in the protective film (20) is approximately flat. The active layer (5) is formed of a group-III nitride semiconductor including Ga as a constituent element. The protective film (20) is formed of at least a first protective film (21) that is in direct contact with an edge surface of the active layer (5), and a second protective film (22) that is in contact with the first protective film (21). A ratio of hydrogen concentration of the first protective film (21) with respect to hydrogen concentration of the second protective film (22) is not less than 0.5 and not more than 2.
摘要翻译：从有源层（5）的边缘表面发射激光束的半导体激光器设置有保护膜（20），该保护膜设置在发射激光束的边缘表面上，层或多层电介质膜。保护膜（20）中的氢浓度分布近似平坦。有源层（5）由包含Ga作为构成元素的III族氮化物半导体形成。保护膜（20）由至少与活性层（5）的边缘表面直接接触的第一保护膜（21）形成，第二保护膜（22）与第一保护膜保护膜（21）。第一保护膜（21）的氢浓度相对于第二保护膜（22）的氢浓度的比例为0.5以上且2以下。

4. 发明授权

US07531619B2 Process for producing dendrimer, building block compound, and process for producing thiophene compound 失效
标题翻译：树枝状大分子，结构单元化合物的制造方法，以及噻吩化合物的制造方法
公开(公告)号：US07531619B2
公开(公告)日：2009-05-12
申请号：US10521689
申请日：2003-07-14
申请人： Satoru Obara , Kentaro Tada
发明人： Satoru Obara , Kentaro Tada
IPC分类号： C08G75/06 , C08G75/00 , C08G61/00 , C08G61/12
CPC分类号： C08G83/003 , C07D333/18 , C08G61/126
摘要： A method for producing a dendrimer having a structural repeating unit which is represented by formula (1) and which contains a linear portion including a thienylene moiety and a branch portion Y formed of an optionally substituted trivalent organic group. The method is based on the convergent method and includes reaction step 1 of converting α-position hydrogen of the thiophene ring of a thienylene-moiety-containing compound (a) for forming end moieties to an active group V1 which undergoes Suzuki cross-coupling reaction, to thereby form compound (b); reaction step 2 of subjecting a compound (c) to Suzuki cross-coupling reaction with the compound (b), to thereby yield compound (d), the compound (c) having a linear portion and a branch portion Y and having, at the branch portion Y, two active groups V2 which undergo Suzuki cross-coupling reaction with the active group V1; reaction step 3 of converting α-position hydrogen of the thiophene ring of the thus-formed compound to an active group V1 which undergoes Suzuki cross-coupling reaction, and reacting the compound (c) with the active group V1, to thereby form a dendron of a subsequent generation; and a step of repeating the reaction step 3 in accordance with needs, to thereby form a dendrimer.
摘要翻译：一种制备具有由式（1）表示的结构重复单元并含有包含由任意取代的三价有机基团形成的亚噻吩基部分和分支部分Y的直链部分的树枝状聚合物的方法。该方法基于收敛方法，包括将形成末端部分的含噻吩烯部分的化合物（a）的噻吩环的α-位氢转化为进行Suzuki交叉偶联反应的活性基团V1的反应步骤1 ，从而形成化合物（b）; 使化合物（c）与化合物（b）进行Suzuki交叉偶联反应的反应步骤2，得到化合物（d），具有直链状部分和分支部分Y的化合物（c）分支部分Y，与活性基团V1进行Suzuki交叉偶联反应的两个活性基团V2; 将由此形成的化合物的噻吩环的α-位氢转化为进行Suzuki交叉偶联反应的活性基团V1，并使化合物（c）与活性基团V1反应从而形成树突状物的反应步骤3 的后代以及根据需要重复反应步骤3的步骤，从而形成树枝状聚合物。

5. 发明申请

US20060122364A1 Process for producing dendrimer, building block compound, and process for producing thiophene compound 失效
标题翻译：树枝状大分子，结构单元化合物的制造方法，以及噻吩化合物的制造方法
公开(公告)号：US20060122364A1
公开(公告)日：2006-06-08
申请号：US10521689
申请日：2003-07-14
申请人： Satoru Obara , Kentaro Tada
发明人： Satoru Obara , Kentaro Tada
IPC分类号： C08G75/32 , C07D409/14
CPC分类号： C08G83/003 , C07D333/18 , C08G61/126
摘要： A method for producing a dendrimer having a structural repeating unit which is represented by formula (1) and which contains a linear portion including a thienylene moiety and a branch portion Y formed of an optionally substituted trivalent organic group. The method is based on the convergent method and includes reaction step 1 of converting α-position hydrogen of the thiophene ring of a thienylene-moiety-containing compound (a) for forming end moieties to an active group V1 which undergoes Suzuki cross-coupling reaction, to thereby form compound (b); reaction step 2 of subjecting a compound (c) to Suzuki cross-coupling reaction with the compound (b), to thereby yield compound (d), the compound (c) having a linear portion and a branch portion Y and having, at the branch portion Y, two active groups V2 which undergo Suzuki cross-coupling reaction with the active group V1; reaction step 3 of converting α-position hydrogen of the thiophene ring of the thus-formed compound to an active group V1 which undergoes Suzuki cross-coupling reaction, and reacting the compound (c) with the active group V1, to thereby form a dendron of a subsequent generation; and a step of repeating the reaction step 3 in accordance with needs, to thereby form a dendrimer.
摘要翻译：一种制备具有由式（1）表示的结构重复单元并含有包含由任意取代的三价有机基团形成的亚噻吩基部分和分支部分Y的直链部分的树枝状聚合物的方法。该方法基于收敛方法，包括将形成末端部分的含噻吩烯部分的化合物（a）的噻吩环的α-位氢转化成活性基团V 1的反应步骤1 进行Suzuki交叉偶联反应，从而形成化合物（b）; 使化合物（c）与化合物（b）进行Suzuki交叉偶联反应的反应步骤2，得到化合物（d），具有直链状部分和分支部分Y的化合物（c）分支部分Y，与活性基团V 1进行Suzuki交叉偶联反应的两个活性基团V 2 2; 将由此形成的化合物的噻吩环的α-位氢转化成活性基团V 1的反应步骤3进行Suzuki交叉偶联反应，并使化合物（c）与活性组V 1，从而形成下一代的树突; 以及根据需要重复反应步骤3的步骤，从而形成树枝状聚合物。

6. 发明申请

US20120258558A1 METHOD OF MANUFACTURING A SEMICONDUCTOR LASER 有权
标题翻译：制造半导体激光的方法
公开(公告)号：US20120258558A1
公开(公告)日：2012-10-11
申请号：US13527188
申请日：2012-06-19
申请人： Kentaro TADA , Kenji ENDO , Kazuo FUKAGAI , Tetsuro OKUDA , Masahide KOBAYASHI
发明人： Kentaro TADA , Kenji ENDO , Kazuo FUKAGAI , Tetsuro OKUDA , Masahide KOBAYASHI
IPC分类号： H01L21/225 , H01L21/02
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/22 , H01S5/34313 , H01S5/34326
摘要： Provided is a semiconductor laser, wherein (λa−λw) >15 (nm) and Lt
摘要翻译：提供了一种半导体激光器，其中（λa-λw）> 15（nm）和Lt <25（μm），其中λw是对应于设置在距离2内的位置的有源层的带隙的光的波长 μm，λa是与位于距离等于或大于（3/10）L和＆nlE的位置的有源层的带隙相对应的光的波长;（ 7/10）L，L是谐振器长度，Lt是设置在有源层的位置与具有λw+的光波长的带隙之间的过渡区域的长度， 2（nm），并且在谐振器方向上具有对应于λa-2（nm）的光波长的带隙的有源层的位置。

7. 发明授权

US07715367B2 IP telephone system, IP telephone apparatus and communications method 有权
标题翻译： IP电话系统，IP电话机和通信方式
公开(公告)号：US07715367B2
公开(公告)日：2010-05-11
申请号：US11183966
申请日：2005-07-19
申请人： Toshiko Nishida , Kazuto Kobayashi , Akira Miyajima , Kentaro Tada , Kiyoshi Toyoda
发明人： Toshiko Nishida , Kazuto Kobayashi , Akira Miyajima , Kentaro Tada , Kiyoshi Toyoda
IPC分类号： H04L12/66
CPC分类号： H04M1/6016 , H04M1/2535 , H04M3/40 , H04M3/4211 , H04M7/006
摘要： An IP telephone system includes an IP telephone apparatus, a Web server and an ENUM server. The IP telephone apparatus is connected to an IP network. The Web server registers talk volume information corresponding to a telephone number assigned to the IP telephone apparatus. The ENUM server registers a NAPTR resource record in which a URI specifies link data related to the talk volume information registered in the Web server. In the IP telephone system, the IP telephone apparatus that has received a call transmits, to the ENUM server, a query for a NAPTR record corresponding to a targeted recipient phone number. The IP telephone apparatus then transmits, to the Web server, a request for the talk volume information corresponding to the targeted recipient phone number according to the returned NAPTR resource record, and adjusts the talk volume according to the returned talk volume information.
摘要翻译： IP电话系统包括IP电话设备，Web服务器和ENUM服务器。 IP电话设备连接到IP网络。 Web服务器登记与分配给IP电话设备的电话号码对应的通话音量信息。 ENUM服务器注册NAPTR资源记录，其中URI指定与在Web服务器中注册的通话量信息相关的链接数据。在IP电话系统中，已经接收到呼叫的IP电话设备向ENUM服务器发送对应于目标接收方电话号码的NAPTR记录的查询。然后，IP电话设备根据返回的NAPTR资源记录向Web服务器发送对应于目标接收方电话号码的通话量信息的请求，并根据返回的通话音量信息调整通话音量。

8. 发明申请

US20090302470A1 Electrode for semiconductor chip and semiconductor chip with the electrode 有权
标题翻译：电极用于半导体芯片和带电极的半导体芯片
公开(公告)号：US20090302470A1
公开(公告)日：2009-12-10
申请号：US12453238
申请日：2009-05-04
申请人： Kentaro Tada
发明人： Kentaro Tada
IPC分类号： H01L29/45
CPC分类号： H01L29/452 , H01L29/20 , H01L29/2003
摘要： In an n-type semiconductor layer that contains gallium (Ga), contact resistance is to be suppressed at a low level. An n-side electrode is provided on a surface of the n-type semiconductor layer containing Ga. The electrode includes a metal layer having a Ga content of equal to or more than 1 at % and equal to or less than 25 at %. The metal layer is disposed in contact with the n-type semiconductor layer.
摘要翻译：在含有镓（Ga）的n型半导体层中，接触电阻被抑制在低水平。在包含Ga的n型半导体层的表面上设置n侧电极，该电极包括Ga含量为1原子％以上且25原子％以下的金属层。金属层设置成与n型半导体层接触。

9. 发明授权

US07329480B2 Radiation-sensitive negative-type resist composition for pattern formation method 失效
标题翻译：用于图案形成方法的辐射敏感负型抗蚀剂组合物
公开(公告)号：US07329480B2
公开(公告)日：2008-02-12
申请号：US10526383
申请日：2003-08-29
申请人： Nobuji Sakai , Kentaro Tada
发明人： Nobuji Sakai , Kentaro Tada
IPC分类号： G03F7/038 , G03F7/004
CPC分类号： G03F7/038 , G03F7/0045
摘要： The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin))
摘要翻译：包含环氧树脂，辐射敏感性阳离子聚合引发剂和用于溶解环氧树脂的溶剂的用于图案形成的辐射敏感性负型抗蚀剂组合物，其特征在于，所述抗蚀剂组合物通过干燥形成抗蚀剂膜，软化点在30〜120℃的范围内，环氧树脂由式（1）表示：（其中R1表示衍生自具有k个活性氢原子的有机化合物的部分（k表示1〜100的整数） n 1，n 2，n 2，n 2，n 2各自表示0或1〜100的整数，n＆lt; 1 2，N 2，N 2，N 2，N 2，N 2，N 2，N 2，彼此表示由式（2）表示的氧环己烷骨架：（其中X表示由式（3）至（5）表示的基团中的任一个：和由f （3）包含在环氧树脂的一分子中））

10. 发明申请

US20060172222A1 Radiation-sensitive negative-type resist composition for pattern formation method 失效
标题翻译：用于图案形成方法的辐射敏感负型抗蚀剂组合物
公开(公告)号：US20060172222A1
公开(公告)日：2006-08-03
申请号：US10526383
申请日：2003-08-29
申请人： Nobuji Sakai , Kentaro Tada
发明人： Nobuji Sakai , Kentaro Tada
IPC分类号： G03C1/76
CPC分类号： G03F7/038 , G03F7/0045
摘要： The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C. and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin)).
摘要翻译：包含环氧树脂，辐射敏感性阳离子聚合引发剂和用于溶解环氧树脂的溶剂的用于图案形成的辐射敏感性负型抗蚀剂组合物，其特征在于，所述抗蚀剂组合物通过干燥形成抗蚀剂膜，软化点在30〜120℃的范围内，环氧树脂由式（1）表示：（其中R1表示衍生自具有k个活性氢原子的有机化合物的部分（k表示1〜100的整数））; n 1，n 2，...，n 2中的每一个表示0或1至100的整数; n _{1 ，N 2，N 2，N 2，N 2，N 2，N 2，表示由式（2）表示的氧环己烷骨架：（式中，X表示由式（3）〜（5）表示的基团中的任一种，式（3）包含在环氧树脂的一个分子中））。}

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