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1. 发明授权

US5841929A Light wavelength filtering circuit and manufacturing method thereof 失效
标题翻译：光波长滤波电路及其制造方法
公开(公告)号：US5841929A
公开(公告)日：1998-11-24
申请号：US780189
申请日：1996-12-26
申请人： Keiro Komatsu , Masako Hayashi , Kiichi Hamamoto , Tatsuya Sasaki , Takeshi Takeuchi
发明人： Keiro Komatsu , Masako Hayashi , Kiichi Hamamoto , Tatsuya Sasaki , Takeshi Takeuchi
IPC分类号： G02B6/12 , G02B6/125 , H04J14/00 , H04J14/02 , G02B6/26
CPC分类号： G02B6/125 , G02B6/12007 , G02B2006/12147 , G02B2006/12164
摘要： A light wavelength filtering circuit in a wavelength-division multiplexing light communication system minimizes transmission loss in the waveguide after wavelength discrimination by having a linear output waveguide added to an output end of a light wavelength discriminating element, at which a signal having a long wavelength is outputted. A curved output waveguide is added to the rear stage of the output end at which a signal having a relatively short wavelength is outputted. Hence, a radiation loss at the output waveguide at the output end is minimized, while a space between the output light waveguides is being widened. Additionally, a core layer bandgap wavelength at the output waveguide of the long wavelength signal is set to be longer than a core layer band gap wavelength in another region. Hence, a substantial light confinement is formed in a horizontal direction even in the output waveguide at the long wavelength signal side and even if the output waveguide at the long wavelength signal side is curved, and the radiation loss can be reduced.
摘要翻译：波分多路复用光通信系统中的光波长滤波电路通过将线性输出波导加到光波长识别元件的输出端，使波长分辨后的波长的传输损耗最小，输出。在输出端的后级添加弯曲输出波导，在该后级输出具有较短波长的信号。因此，在输出端处的输出波导处的辐射损耗最小化，同时输出光波导之间的空间被扩大。此外，长波长信号的输出波导处的核心层带隙波长被设定为比另一区域的核心层带隙波长长。因此，即使在长波长信号侧的输出波导中，即使长波长信号侧的输出波导弯曲，也能够在水平方向上形成实质的光限制，能够降低辐射损失。

2. 发明授权

US4795241A Device and method for providing optical bistability with free carrier recombination centers introduced into an optical guide surrounding semiconductor layer portion 失效
标题翻译：用于提供光学双稳态的装置和方法，其引入到围绕半导体层部分的光导中的自由载体复合中心
公开(公告)号：US4795241A
公开(公告)日：1989-01-03
申请号：US125083
申请日：1987-11-25
申请人： Keiro Komatsu , Masahiko Fujiwara
发明人： Keiro Komatsu , Masahiko Fujiwara
IPC分类号： H01L31/14 , G02F1/21 , G02F3/02 , H01L31/12 , G02B5/23
CPC分类号： G02F3/024 , G02F1/218
摘要： In a semiconductor layer which has in a semiconductor bistable etalon a refractive index variable, as a result of absorption by excitons, with the intensity of an optical beam incident thereon, an optical guide for the optical beam is surrounded by a cladding portion including atoms which reduce the refractive index in the cladding portion relative to the optical guide and serve as recombination centers for free carries produced by decomposition of the excitons. The semiconductor layer may be either a superlattice layer, such as a GaAs-GaAlAs layer, or a bulk semiconductor layer, such as a GaAs layer. After forming the semiconductor layer on an etch-stop layer which is formed on a semiconductor substrate for chemical etch of the substrate for a window, the atoms are injected into the surrounding portion as by bombarding an exposed surface of the semiconductor layer by hydrogen ions with a mask selectively formed on the exposed area to cover an area contiguous on the exposed surface to a columnar portion which becomes the optical guide. The hydrogen ions automatically become the atoms of the above-described type in the surrounding portion.
摘要翻译：在具有半导体双稳态标准具的半导体层中，作为由激子吸收的结果，入射到其上的光束的强度的折射率可变，用于光束的光导由包括原子包围的包层部分包围，降低包层部分相对于光导的折射率，并且用作由激子分解产生的自由载体的复合中心。半导体层可以是超晶格层，例如GaAs-GaAlAs层，或诸如GaAs层的体半导体层。在半导体衬底上形成半导体衬底以进行窗口用衬底化学蚀刻的蚀刻停止层上形成半导体层之后，通过用氢离子轰击半导体层的暴露表面，将原子注入周围部分，选择性地形成在暴露区域上的掩模，以将暴露表面上邻接的区域覆盖成为导光体的柱状部分。氢离子在周围部分自动成为上述类型的原子。

3. 发明授权

US06278170B1 Semiconductor multiple quantum well mach-zehnder optical modulator and method for fabricating the same 失效
标题翻译：半导体多量子阱马赫 - 泽恩德光调制器及其制造方法
公开(公告)号：US06278170B1
公开(公告)日：2001-08-21
申请号：US08589584
申请日：1996-01-22
申请人： Keiro Komatsu
发明人： Keiro Komatsu
IPC分类号： H01L3300
CPC分类号： B82Y20/00 , G02B2006/12178 , G02F1/01708 , G02F1/2257 , G02F2001/212
摘要： A Mach-Zehnder type optical modulator having a ridge structure including a multiple quantum well wave guide layer expending both in a passive region and in an active phase modulation region on which an electrical field is applied, wherein the wave guide layer is selectively grown by a metal organic vapor phase epitaxy with use of dielectric stripe mask patterns having a large width in the active phase modulation region and a small width in the passive region so that the wave guide layer has a band gap wavelength equal to or near a wavelength of an incidental light in the active phase modulation region and a smaller band gap wavelength smaller than the wavelength of the incidental light in the passive region.
摘要翻译：一种马赫 - 曾德尔型光调制器，具有包括在被施加电场的无源区域和有源相位调制区域中均包括的多量子阱波导层的脊结构，其中，波导层选择性地通过使用在有源相位调制区域中具有大宽度的介质条纹掩模图案和无源区域中的小宽度的金属有机气相外延，使得波导层具有等于或接近附带的波长的带隙波长有源相位调制区域中的光，以及比无源区域中的附带光的波长小的带隙波长。

4. 发明授权

US5825047A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US5825047A
公开(公告)日：1998-10-20
申请号：US307036
申请日：1994-09-16
申请人： Akira Ajisawa , Tomoji Terakado , Masayuki Yamaguchi , Keiro Komatsu
发明人： Akira Ajisawa , Tomoji Terakado , Masayuki Yamaguchi , Keiro Komatsu
IPC分类号： G02F1/015 , G02F1/025 , H01L31/0224 , H01L31/105 , H01S5/026 , H01S5/042 , H01L21/20 , H01L21/205
CPC分类号： G02F1/025 , H01L31/022408 , H01L31/105 , G02F2001/0157 , H01S5/0265 , H01S5/0425 , H01S5/2224
摘要： An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and by burying layers on both sides. With this structure, the device capacitance is decreased to provide wide bandwidth and ultra-high speed operation properties. This device can be applied to an optical modulator, an integrated type optical modulator, and an optical detector.
摘要翻译：光学半导体器件包括设置在半绝缘衬底上的条状台面结构。条状台面结构包括被覆层夹着的未掺杂的光吸收层，并且通过在两侧上埋设层。利用这种结构，器件电容降低，提供宽带宽和超高速操作特性。该装置可以应用于光调制器，集成型光调制器和光检测器。

5. 发明授权

US5770466A Semiconductor optical integrated circuits and method for fabricating the same 失效
标题翻译：半导体光集成电路及其制造方法
公开(公告)号：US5770466A
公开(公告)日：1998-06-23
申请号：US400570
申请日：1995-03-08
申请人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
发明人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/40 , H01L21/20
CPC分类号： H01S5/4031 , H01S5/026 , H01S5/06256 , H01S2304/04 , H01S5/0265 , H01S5/06258 , H01S5/1003 , H01S5/125 , H01S5/2077 , H01S5/2272 , H01S5/4025 , H01S5/4068 , H01S5/4087
摘要： A semiconductor optical monolithic integration device has a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on an entire surface of the passive region by the metal organic vapor phase epitaxy and the epitaxial layers have a mesa structure in the active region and a plane structure in the passive region. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in the active and passive regions. The second mask pattern has a constant width. In the active region, the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer are provided on the plane structure epitaxial layers.
摘要翻译：半导体光学单片集成器件具有包括有源区和被动区的半导体衬底。包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。第一掩模图案沿波导方向具有宽度变化。外延层通过金属有机气相外延在无源区的整个表面上同时且非选择性地生长，并且外延层在有源区中具有台面结构和在被动区中具有平面结构。通过在由有源和无源区域中提供的第二掩模图案限定的第二选择性增长区域上的金属有机气相外延选择性地生长具有脊状结构的覆层。第二掩模图案具有恒定的宽度。在有源区域中，脊状覆层完全嵌入台面结构外延层，并且在无源区域中，脊状覆层设置在平面结构外延层上。

6. 发明授权

US5565693A Semiconductor optical integrated circuits 失效
标题翻译：半导体光集成电路
公开(公告)号：US5565693A
公开(公告)日：1996-10-15
申请号：US179049
申请日：1994-01-07
申请人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
发明人： Tatsuya Sasaki , Mitsuhiro Kitamura , Kiichi Hamamoto , Shotaro Kitamura , Keiro Komatsu , Yasutaka Sakata
IPC分类号： H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/40 , H01L33/00
CPC分类号： H01S5/4031 , H01S5/026 , H01S5/06256 , H01S2304/04 , H01S5/0265 , H01S5/06258 , H01S5/1003 , H01S5/125 , H01S5/2077 , H01S5/2272 , H01S5/4025 , H01S5/4068 , H01S5/4087
摘要： A semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. The epitaxial layers in the active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in the active region except in the passive region. The first mask pattern has a variation in width along the waveguide direction. The epitaxial layers are simultaneously and non-selectively grown on the entirety of the passive region by metal organic vapor phase epitaxy and epitaxial layers having a mesa structure in the active region and a plane structure in the passive region are formed. A cladding layer having a ridged structure is selectively grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in both the active and passive regions. The second mask pattern has a constant width. In the active region the ridged cladding layer completely embeds the mesa structure epitaxial layers and in the passive region the ridged cladding layer is provided on the plane structure epitaxial layers.
摘要翻译：半导体光学单片集成器件包括包括有源区和无源区的半导体衬底。包括多量子阱结构的外延层具有沿着波导方向的带隙能量和厚度的变化。有源区中的外延层通过金属有机气相外延选择性地生长在由除了被动区域之外的有源区域中提供的第一掩模图案限定的第一选择性增长区域上。第一掩模图案沿波导方向具有宽度变化。外延层通过金属有机气相外延在整个无源区上同时且非选择性地生长，并且在有源区中具有台面结构并形成无源区中的平面结构的外延层。具有脊状结构的包覆层通过金属有机气相外延选择性地生长在由在有源区域和被动区域中提供的第二掩模图案限定的第二选择性增长区域上。第二掩模图案具有恒定的宽度。在有源区域中，脊状覆层完全嵌入台面结构外延层，并且在无源区域中，脊状覆层设置在平面结构外延层上。

7. 发明授权

US5334551A Method of making semiconductor optical guided-wave device 失效
标题翻译：制造半导体光波导器件的方法
公开(公告)号：US5334551A
公开(公告)日：1994-08-02
申请号：US910739
申请日：1992-07-08
申请人： Keiro Komatsu
发明人： Keiro Komatsu
IPC分类号： H01L31/14 , G02B6/13 , G02F1/015 , G02F1/025 , G02F1/225 , G02F1/313 , H01S5/00 , H01L21/20 , H01L21/203
CPC分类号： G02F1/025 , G02B6/131 , G02F1/2257 , G02F1/3133 , G02F2001/0154 , G02F2201/063
摘要： A semiconductor optical guided-wave device which makes quantization and integration possible and which is fine in structure and low in loss is provided, which comprises a semiconductor substrate, at least one ridge type semiconductor optical waveguide formed thereon and at least one pair of electrodes for applying an electric field to the waveguide. The ridge of the optical waveguide is formed by a selective crystal growth process. The ridge can be realized preferably in such a method that a mask having an opening at a position where a ridge is formed is patterned to a layer on which the ridge is formed, and the crystal growth of a material for forming the ridge is made by a crystal growth technology such as the MOVPE method. The mask to be used for the crystal growth purpose is preferable to be a thin dielectric film such as, for example, SiO.sub.2 film. The semiconductor optical waveguide preferably comprises grown layers including a first semiconductor cladding layer, a semiconductor guiding and a second semiconductor cladding layer grown in this order and a ridge having a third semiconductor cladding layer and a semiconductor capping layer laminated in this order on the second semiconductor cladding layer.
摘要翻译：提供一种使得量化和集成成为可能并且结构细小且损耗低的半导体光导波装置，其包括半导体衬底，形成在其上的至少一个脊型半导体光波导和至少一对电极，向波导施加电场。通过选择性晶体生长工艺形成光波导的脊。可以优选以这样一种方法实现脊，即在形成脊的位置处具有开口的掩模被图案化成形成脊的层，并且用于形成脊的材料的晶体生长由晶体生长技术如MOVPE方法。用于晶体生长目的的掩模优选为例如SiO 2膜的薄电介质膜。半导体光波导优选地包括生长层，其包括依次生长的第一半导体包覆层，半导体引导和第二半导体覆层以及在第二半导体上依次层叠有第三半导体包覆层和半导体覆盖层的脊包层

8. 发明授权

US5455433A Semiconductor optical guided-wave device 失效
标题翻译：半导体光导波器件
公开(公告)号：US5455433A
公开(公告)日：1995-10-03
申请号：US237856
申请日：1994-05-04
申请人： Keiro Komatsu
发明人： Keiro Komatsu
IPC分类号： H01L31/14 , G02B6/13 , G02F1/015 , G02F1/025 , G02F1/225 , G02F1/313 , H01S5/00 , H01L33/00
CPC分类号： G02F1/025 , G02B6/131 , G02F1/2257 , G02F1/3133 , G02F2001/0154 , G02F2201/063
摘要： A semiconductor optical guided-wave device which makes quantization and integration possible and which is fine in structure and low in loss is provided, which comprises a semiconductor substrate, at least one ridge type semiconductor optical waveguide formed thereon and at least one pair of electrodes for applying an electric field to the waveguide. The ridge of the optical waveguide is formed by a selective crystal growth process.. The ridge can be realized preferably in such a method that a mask having an opening at a position where a ridge is formed is patterned to a layer on which the ridge is formed, and the crystal growth of a material for forming the ridge is made by a crystal growth technology such as the MOVPE method. The mask to be used for the crystal growth purpose is preferably a thin dielectric film such as, for example, SiO.sub.2 film. The semiconductor optical waveguide preferably comprises grown layers including a first semiconductor cladding layer, a semiconductor guiding and a second semiconductor cladding layer grown in this order and a ridge having a third semiconductor cladding layer and a semiconductor capping layer laminated in this order on the second semiconductor cladding layer.
摘要翻译：提供一种使得量化和集成成为可能并且结构细小且损耗低的半导体光导波装置，其包括半导体衬底，形成在其上的至少一个脊型半导体光波导和至少一对电极，向波导施加电场。光波导的脊通过选择性晶体生长工艺形成。该脊可以优选以这样一种方法实现，即在形成脊的位置处具有开口的掩模被图案化成其上的脊是形成，并且通过诸如MOVPE方法的晶体生长技术来形成用于形成脊的材料的晶体生长。用于晶体生长目的的掩模优选为例如SiO 2膜的薄电介质膜。半导体光波导优选地包括生长层，其包括依次生长的第一半导体包覆层，半导体引导和第二半导体覆层以及在第二半导体上依次层叠有第三半导体包覆层和半导体覆盖层的脊包层

9. 发明授权

US5237639A Optical waveguide formed of compound semiconductor materials and process of fabricating the optical waveguide 失效
标题翻译：形成复合半导体材料的光波导和制造光波导的方法
公开(公告)号：US5237639A
公开(公告)日：1993-08-17
申请号：US822135
申请日：1992-01-17
申请人： Tomoaki Kato , Keiro Komatsu , Tatsuya Sasaki
发明人： Tomoaki Kato , Keiro Komatsu , Tatsuya Sasaki
IPC分类号： G02B6/122 , G02B6/13 , G02F1/025 , G02F1/35 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/20 , H01S5/323
CPC分类号： H01L27/15 , G02B6/131 , H01S5/0265 , H01S5/20 , H01S5/12 , H01S5/32391
摘要： An optical waveguide is fabricated on a substrate of n-type indium phosphide, and comprises a guiding layer of intentionally undoped indium gallium arsenide sandwiched between lower and upper cladding layers of intentionally undoped indium phosphide, wherein the upper cladding layer has a ridge epitaxially grown on a part of an upper surface of the upper cladding layer so that the optical waveguide achieves low propagation losses.

10. 发明申请

US20100034231A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20100034231A1
公开(公告)日：2010-02-11
申请号：US12535163
申请日：2009-08-04
申请人： Kazuhisa FUKUDA , Chiaki SASAOKA , Kentaro TADA , Toshiaki IGARASHI , Fumito MIYASAKA , Keiro KOMATSU
发明人： Kazuhisa FUKUDA , Chiaki SASAOKA , Kentaro TADA , Toshiaki IGARASHI , Fumito MIYASAKA , Keiro KOMATSU
IPC分类号： H01S5/028 , H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/0287 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is emitted, and formed of a single-layer or a multilayer dielectric film. Hydrogen concentration distribution in the protective film (20) is approximately flat. The active layer (5) is formed of a group-III nitride semiconductor including Ga as a constituent element. The protective film (20) is formed of at least a first protective film (21) that is in direct contact with an edge surface of the active layer (5), and a second protective film (22) that is in contact with the first protective film (21). A ratio of hydrogen concentration of the first protective film (21) with respect to hydrogen concentration of the second protective film (22) is not less than 0.5 and not more than 2.
摘要翻译：从有源层（5）的边缘表面发射激光束的半导体激光器设置有保护膜（20），该保护膜设置在发射激光束的边缘表面上，层或多层电介质膜。保护膜（20）中的氢浓度分布近似平坦。有源层（5）由包含Ga作为构成元素的III族氮化物半导体形成。保护膜（20）由至少与活性层（5）的边缘表面直接接触的第一保护膜（21）形成，第二保护膜（22）与第一保护膜保护膜（21）。第一保护膜（21）的氢浓度相对于第二保护膜（22）的氢浓度的比例为0.5以上且2以下。

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