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    • 4. 发明授权
    • Radiation-sensitive negative-type resist composition for pattern formation method
    • 用于图案形成方法的辐射敏感负型抗蚀剂组合物
    • US07329480B2
    • 2008-02-12
    • US10526383
    • 2003-08-29
    • Nobuji SakaiKentaro Tada
    • Nobuji SakaiKentaro Tada
    • G03F7/038G03F7/004
    • G03F7/038G03F7/0045
    • The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin))
    • 包含环氧树脂,辐射敏感性阳离子聚合引发剂和用于溶解环氧树脂的溶剂的用于图案形成的辐射敏感性负型抗蚀剂组合物,其特征在于,所述抗蚀剂组合物通过干燥形成抗蚀剂膜, 软化点在30〜120℃的范围内,环氧树脂由式(1)表示:(其中R1表示衍生自具有k个活性氢原子的有机化合物的部分(k表示1〜100的整数) n 1,n 2,n 2,n 2,n 2各自表示0或1〜100的整数,n< 1 2,N 2,N 2,N 2,N 2,N 2,N 2,N 2, 彼此表示由式(2)表示的氧环己烷骨架:(其中X表示由式(3)至(5)表示的基团中的任一个:和由f (3)包含在环氧树脂的一分子中))
    • 5. 发明申请
    • Radiation-sensitive negative-type resist composition for pattern formation method
    • 用于图案形成方法的辐射敏感负型抗蚀剂组合物
    • US20060172222A1
    • 2006-08-03
    • US10526383
    • 2003-08-29
    • Nobuji SakaiKentaro Tada
    • Nobuji SakaiKentaro Tada
    • G03C1/76
    • G03F7/038G03F7/0045
    • The radiation-sensitive negative-type resist composition for pattern formation containing an epoxy resin, a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein, characterized in that the resist composition, through drying, forms a resist film having a softening point falling within range of 30 to 120 C. and that the epoxy resin is represented by formula (1): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nK falls within a range of 1 to 100; and each of “A”s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (2): (wherein X represents any of groups represented by formulas (3) to (5): and at least two groups represented by formula (3) are contained in one molecule of the epoxy resin)).
    • 包含环氧树脂,辐射敏感性阳离子聚合引发剂和用于溶解环氧树脂的溶剂的用于图案形成的辐射敏感性负型抗蚀剂组合物,其特征在于,所述抗蚀剂组合物通过干燥形成抗蚀剂膜, 软化点在30〜120℃的范围内,环氧树脂由式(1)表示:(其中R1表示衍生自具有k个活性氢原子的有机化合物的部分(k表示1〜100的整数) ); n 1,n 2,...,n 2中的每一个表示0或1至100的整数; n 1 ,N 2,N 2,N 2,N 2,N 2,N 2, 表示由式(2)表示的氧环己烷骨架:(式中,X表示由式(3)〜(5)表示的基团中的任一种, 式(3)包含在环氧树脂的一个分子中))。
    • 6. 发明申请
    • Method for producing a pattern formation mold
    • US20060189160A1
    • 2006-08-24
    • US10526384
    • 2003-08-29
    • Tadashi HattoriYuichi UtsumiNobuji SakaiKentaro Tada
    • Tadashi HattoriYuichi UtsumiNobuji SakaiKentaro Tada
    • H01L21/31H01L21/469
    • B81C99/009C08G59/32C08G59/3218G03F7/0017G03F7/038
    • The method for producing a pattern formation mold includes: a first step of applying to a substrate a radiation-sensitive negative-type resist composition containing an epoxy resin represented by formula (I): (wherein R1 represents a moiety derived from an organic compound having k active hydrogen atoms (k represents an integer of 1 to 100); each of n1, n2, through nk represents 0 or an integer of 1 to 100; the sum of n1, n2, through nk falls within a range of 1 to 100; and each of “A” s, which may be identical to or different from each other, represents an oxycyclohexane skeleton represented by formula (II): (wherein X represents any of groups represented by formulas (III) to (V): and at least two groups represented by formula (III) are contained in one molecule of the epoxy resin)), along with a radiation-sensitive cationic polymerization initiator, and a solvent for dissolving the epoxy resin therein; a second step of drying the substrate coated with the radiation-sensitive negative-type resist composition, to thereby form a resist film; a third step of selectively exposing the formed resist film to an active energy beam according to a desired pattern; a fourth step of heating the exposed resist film so as to enhance a contrast of a pattern to be formed; a fifth step of developing the heated resist film, to thereby remove the unexposed area of the resist film through dissolution, thereby forming a patterned layer; and a sixth step of applying to the patterned layer a material other than that of the patterned layer such that spaces present in the patterned layer are filled, at least to some height, with the material, to thereby form a second layer, and removing the second layer, to thereby yield a pattern formation mold.