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1. 发明授权

US08228966B2 Semiconductor laser and method of manufacturing semiconductor laser 有权
标题翻译：半导体激光器及制造半导体激光器的方法
公开(公告)号：US08228966B2
公开(公告)日：2012-07-24
申请号：US12710607
申请日：2010-02-23
申请人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
发明人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
IPC分类号： H01S5/00
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/22 , H01S5/34313 , H01S5/34326
摘要： Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt
摘要翻译：提供了一种半导体激光器，其中（λa-λw）> 15（nm）和Lt <25（μm），其中λw是对应于设置在距离2内的位置的有源层的带隙的光的波长 μm，λa是与位于距离等于或大于（3/10）L的位置处的有源层的带隙对应的光的波长，并且<（7 / 10）L，谐振器长度为“L”，“Lt”为有源层的位置与光波长对应的带隙之间的过渡区域的长度的λw+ 2（nm）的波长的有源层的位置以及在谐振器方向上具有对应于λa-2（nm）的光波长的带隙的有源层的位置。

2. 发明授权

US08450130B2 Method of manufacturing a semiconductor laser 有权
标题翻译：制造半导体激光器的方法
公开(公告)号：US08450130B2
公开(公告)日：2013-05-28
申请号：US13527188
申请日：2012-06-19
申请人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
发明人： Kentaro Tada , Kenji Endo , Kazuo Fukagai , Tetsuro Okuda , Masahide Kobayashi
IPC分类号： H01L21/223 , H01L21/225
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/22 , H01S5/34313 , H01S5/34326
摘要： Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt
摘要翻译：提供了一种半导体激光器，其中（λa-lambdaw）> 15（nm）和Lt <25（mum），其中，lambdaw是与设置在距离2内的位置处的有源层的带隙相对应的光的波长从谐振器方向的一个端面起，λa是对应于设置在等于或大于（3/10）L和@（7）的距离的位置处的有源层的带隙的光的波长 / 10）L，谐振器长度为“L”，“Lt”为有源层的位置与光波长对应的带隙之间的过渡区域的长度的羔羊+ 2（nm），并且在谐振器方向上具有对应于λa-2（nm）的光波长的带隙的有源层的位置。

3. 发明授权

US07868716B2 Acoustic wave filter apparatus 有权
标题翻译：声波滤波装置
公开(公告)号：US07868716B2
公开(公告)日：2011-01-11
申请号：US12505604
申请日：2009-07-20
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/0085 , H03H9/0071 , H03H2250/00
摘要： An acoustic wave filter apparatus where first balance input/output terminals of first and second acoustic wave filter sections are commonly connected to each other and then connected to a first balance terminal, second balance input/output terminals thereof are commonly connected to each other and then connected to a second balanced terminal, the first and second balance input/output terminals of the first acoustic wave filter section are coupled to the first and second balance terminals, respectively, via first and third wiring lines and first and third acoustic wave resonators, respectively, the first and second balance input/output terminals of the second acoustic wave filter section are coupled to the first and second balance terminals, respectively, via second and fourth wiring lines and second and fourth acoustic wave resonators, respectively, and the second wiring line and the third wiring line cross each other on a piezoelectric substrate.
摘要翻译：一种声波滤波器装置，其中第一和第二声波滤波器部分的第一平衡输入/输出端子共同连接，然后连接到第一平衡端子，其第二平衡输入/输出端子彼此相连，然后连接到第二平衡端子，第一声波滤波器部分的第一和第二平衡输入/输出端分别经由第一和第三布线以及第一和第三声波谐振器分别耦合到第一和第二平衡端子第二声波滤波器部分的第一和第二平衡输入/输出端分别通过第二和第四布线和第二和第四声波谐振器分别耦合到第一和第二平衡端子，第二布线并且第三布线在压电基板上彼此交叉。

4. 发明申请

US20090273409A1 ACOUSTIC WAVE FILTER APPARATUS 有权
标题翻译：声波滤波器
公开(公告)号：US20090273409A1
公开(公告)日：2009-11-05
申请号：US12505604
申请日：2009-07-20
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： H03H9/64 , H03H9/54 , H03H7/42
CPC分类号： H03H9/0085 , H03H9/0071 , H03H2250/00
摘要： An acoustic wave filter apparatus includes first and second acoustic wave filter sections on one piezoelectric substrate, first balance terminals of the first and second acoustic wave filter sections are commonly coupled to each other, and second balance terminals thereof are commonly coupled to each other. An acoustic wave filter apparatus where first balance input/output terminals of first and second acoustic wave filter sections are commonly connected to each other and then connected to a first balance terminal, second balance input/output terminals thereof are commonly connected to each other and then connected to a second balance terminal, the first and second balance output terminals of the first acoustic wave filter section are connected to first and third acoustic wave resonators, respectively, via first and third wiring lines, respectively, and then coupled to the first and second balance terminals, respectively, via the first and third acoustic wave resonators, respectively, the first and second balance output terminals of the second acoustic wave filter section are coupled to the first and second balance terminals, respectively, via second and fourth wiring line and second and fourth acoustic wave resonators, respectively, and the second wiring line and second wiring line cross each other on a piezoelectric substrate.
摘要翻译：声波滤波器装置包括在一个压电基板上的第一和第二声波滤波器部分，第一和第二声波滤波器部分的第一平衡端子彼此共同耦合，并且其第二平衡端子彼此共同耦合。一种声波滤波器装置，其中第一和第二声波滤波器部分的第一平衡输入/输出端子共同连接，然后连接到第一平衡端子，其第二平衡输入/输出端子彼此相连，然后连接到第二平衡端子，第一声波滤波器部分的第一和第二平衡输出端子分别经由第一和第三布线连接到第一和第三声波谐振器，然后耦合到第一和第二平衡端子平衡端子分别经由第一和第三声波谐振器，第二声波滤波器部分的第一和第二平衡输出端分别经由第二和第四布线和第二布线连接到第一和第二平衡端子和第四声波谐振器，第二布线和第二布线交叉彼此在压电基板上。

5. 发明申请

US20050254541A1 Semiconductor laser and manufacturing process therefor 有权
标题翻译：半导体激光器及其制造工艺
公开(公告)号：US20050254541A1
公开(公告)日：2005-11-17
申请号：US11124113
申请日：2005-05-09
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： G02B5/18 , G03F7/20 , H01S3/08 , H01S5/00 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/343
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0425 , H01S5/12 , H01S5/2214 , H01S5/2223 , H01S5/2275 , H01S5/3235 , H01S5/34306
摘要： There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.
摘要翻译：提供了包括n-InP衬底1的半导体激光器; 包含n-InP基板1上的应变MQW有源层6的多层膜; 多层膜上的p电极18; 一对槽15，其分离p电极18的两个边缘并延伸到n-InP衬底1的多层膜; 以及在形成于n-InP基板1的上表面的任意半导体膜的上表面的衍射光栅形成面上，形成在该对沟槽15的一面与另一方的区域的多个衍射光栅，多层膜。

6. 发明授权

US5469459A Laser diode element with excellent intermodulation distortion characteristic 失效
标题翻译：激光二极管元件具有优异的互调失真特性
公开(公告)号：US5469459A
公开(公告)日：1995-11-21
申请号：US178859
申请日：1994-01-07
申请人： Tetsuro Okuda , Hirohito Yamada , Toshitaka Torikai
发明人： Tetsuro Okuda , Hirohito Yamada , Toshitaka Torikai
IPC分类号： H01S5/028 , H01S5/062 , H01S5/10 , H01S5/12 , H01S3/19
CPC分类号： H01S5/12 , H01S5/028 , H01S5/06213 , H01S5/1039 , H01S5/1225
摘要： In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the layer cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.
摘要翻译：在包括前面，后刻面的激光二极管元件，形成在前后小面之间并具有预定长度L的激光腔，涂覆在前刻面上的涂层以提供小于5％的反射率，以及活性物质层和均匀的光栅，其具有在层腔的方向上形成的规则的波纹，并且以预定的耦合常数K彼此耦合，激光二极管元件由预定耦合常数和预定长度L的乘积指定，在0.4到1.0之间的范围内。

7. 发明授权

US07602827B2 Semiconductor laser and manufacturing process therefor 有权
标题翻译：半导体激光器及其制造工艺
公开(公告)号：US07602827B2
公开(公告)日：2009-10-13
申请号：US11124113
申请日：2005-05-09
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： H01S3/04
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/0425 , H01S5/12 , H01S5/2214 , H01S5/2223 , H01S5/2275 , H01S5/3235 , H01S5/34306
摘要： There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.
摘要翻译：提供了包括n-InP衬底1的半导体激光器; 包含n-InP基板1上的应变MQW有源层6的多层膜; 多层膜上的p电极18; 一对槽15，其分离p电极18的两个边缘并延伸到n-InP衬底1的多层膜; 以及在形成于n-InP基板1的上表面的任意半导体膜的上表面的衍射光栅形成面上，形成在该对沟槽15的一面与另一方的区域的多个衍射光栅，多层膜。

8. 发明授权

US06526087B1 Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US06526087B1
公开(公告)日：2003-02-25
申请号：US09524219
申请日：2000-03-13
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： H01S500
CPC分类号： H01S5/10 , H01S5/1064 , H01S5/12 , H01S5/164 , H01S5/2077
摘要： In a distributed feedback semiconductor laser having at least an active layer and a diffraction grating on a semiconductor substrate and so constructed that a current is injected uniformly over an axial direction of a resonator, a bandgap wavelength of the active layer in the neighborhood of a light outputting end or a backward end opposite to the light outputting end, is shorter than that in the other region of the active layer along the axial direction of the resonator.
摘要翻译：在半导体衬底上至少具有有源层和衍射光栅的分布式反馈半导体激光器中，其结构使电流在谐振器的轴向上均匀地注入，有源层在光的附近的带隙波长与光输出端相对的输出端或后端比沿着谐振器的轴向的有源层的另一区域的端部短。

9. 发明授权

US5982798A Semiconductor laser and process for production thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5982798A
公开(公告)日：1999-11-09
申请号：US898108
申请日：1997-07-22
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/06226 , H01S5/2277
摘要： In a semiconductor laser for analog modulation, intermodulation distortion at high temperatures and/or at high outputs is reduced. In a DC-PBH semiconductor laser, the width (Wm) of the electrode mesa 11 is set at 10 .mu.m or less, and the width of each recombination layer 2 is set at 0.1 .mu.m or more. Further, the distance between one end of the active layer 1 and one end of each current-blocking layer 5 is set at 0.01 .mu.m to 0.5 .mu.m.
摘要翻译：在用于模拟调制的半导体激光器中，降低了高温和/或高输出时的互调失真。在DC-PBH半导体激光器中，将电极台面11的宽度（Wm）设定为10μm以下，将各复合层2的宽度设定为0.1μm以上。此外，有源层1的一端与各阻流层5的一端之间的距离为0.01μm〜0.5μm。

10. 发明授权

US5802096A Distributed feed back laser with a grating structure adjusted for a reduced intermodulation distortion in an analog amplitude modulation and method for fabricating the same 失效
标题翻译：分布式反馈激光器，其具有针对模拟幅度调制中的减少的互调失真而调整的光栅结构及其制造方法
公开(公告)号：US5802096A
公开(公告)日：1998-09-01
申请号：US621946
申请日：1996-03-25
申请人： Tetsuro Okuda
发明人： Tetsuro Okuda
IPC分类号： H01S5/12 , H01S3/08 , H01S3/19
CPC分类号： H01S5/12 , H01S5/0287 , H01S5/1209 , H01S5/1218 , H01S5/1225
摘要： The present invention provides a grating structure partially provided in a semiconductor laser device having a first facet of a first reflectivity and a second facet of a second reflectivity which is larger than the first reflectivity. The grating structure extends within a half area near the first facet in the semiconductor laser device. The grating structure has a grating length in a cavity direction of not more than one third of a cavity length defined as a distance between the first and second facets. The grating structure has an integrated coupling coefficient value in the range of 0.4-0.6, the integrated coupling coefficient value is obtained by integrating coupling coefficient of the grating structure with positions in the cavity direction.
摘要翻译：本发明提供一种部分地设置在半导体激光装置中的光栅结构，其具有第一反射率的第一面和比第一反射率大的第二反射率的第二面。光栅结构在半导体激光器件中的第一刻面附近的半个区域内延伸。光栅结构具有在空腔方向上的不超过腔长度的三分之一的光栅长度，其被定义为第一和第二面之间的距离。光栅结构具有在0.4-0.6范围内的积分耦合系数值，通过将光栅结构的耦合系数与空腔方向上的位置相结合获得积分耦合系数值。

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