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1. 发明授权

US5291536A X-ray mask, method for fabricating the same, and pattern formation method 失效
标题翻译： X射线掩模，其制造方法和图案形成方法
公开(公告)号：US5291536A
公开(公告)日：1994-03-01
申请号：US900494
申请日：1992-06-18
申请人： Masamitsu Itoh , Shinji Sugihara , Ken-ichi Murooka
发明人： Masamitsu Itoh , Shinji Sugihara , Ken-ichi Murooka
IPC分类号： G03F1/22 , H01L21/027 , G03C5/00
CPC分类号： G03F1/22 , G03F1/46
摘要： A method for forming an X-ray exposure mask having an X-ray permeable film with a high visible-light transmissivity. The method includes the steps of forming an aluminum oxide anti-reflective film on an x-ray permeable film, placing an x-ray absorber on the anti-reflective film and etching with the x-ray absorber to form x-ray pattern.
摘要翻译：一种形成具有高可见光透射率的X射线透过膜的X射线曝光掩模的方法。该方法包括以下步骤：在x射线透过膜上形成氧化铝抗反射膜，在抗反射膜上放置x射线吸收体，用x射线吸收体进行蚀刻，形成x射线图案。

2. 发明授权

US06404481B1 Adaptive lithography membrane masks 失效
标题翻译：自适应光刻膜面膜
公开(公告)号：US06404481B1
公开(公告)日：2002-06-11
申请号：US09578573
申请日：2000-05-25
申请人： Martin Feldman , Henry I. Smith , Ken-Ichi Murooka , Michael H. Lim
发明人： Martin Feldman , Henry I. Smith , Ken-Ichi Murooka , Michael H. Lim
IPC分类号： G03B2768
CPC分类号： G03F7/70433 , G03F1/20 , G03F1/22 , G03F7/70633 , G03F7/70875
摘要： Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer. In another embodiment, a reference pattern is formed on the membrane as a means of measuring mask distortion, and the heat input distribution needed to correct distortion is determined by subsequent measurements of the reference pattern. In this alternative embodiment, any source of distortion in the mask may be corrected.
摘要翻译：公开了通过局部加热光刻掩模中的膜来补偿光刻中的变形的技术。这些技术可以同时用于收缩和局部扩大掩模的区域，以便调整变化的幅度和失真的迹象。在一个实施例中，校正方法包括两个步骤：（1）通过传统手段对发射晶片进行曝光和测量，以确定整个场中的几个点处的覆盖误差。（2）在后续晶片曝光期间，校准光束聚焦在掩模上。来自吸收光的加热产生位移，补偿由发射晶片测量的重叠误差。可以校正任何失真源 - 例如，最初出现在掩模上的失真，仅在掩模上随时间发生的失真或晶片上的失真。在另一个实施例中，作为测量掩模失真的手段在膜上形成参考图案，并且通过参考图案的后续测量来确定校正失真所需的热输入分布。在该替代实施例中，可以校正掩模中的任何失真源。

3. 发明授权

US5923034A Pattern transfer mask, mask inspection method and a mask inspection apparatus 失效
标题翻译：图案转印掩模，掩模检查方法和掩模检查装置
公开(公告)号：US5923034A
公开(公告)日：1999-07-13
申请号：US950802
申请日：1997-10-15
申请人： Munehiro Ogasawara , Ken-ichi Murooka
发明人： Munehiro Ogasawara , Ken-ichi Murooka
IPC分类号： G01B11/24 , G01B15/00 , G01B15/04 , G01N23/18 , G03F1/20 , G03F1/84 , G03F1/86 , H01J37/26 , H01L21/027 , H01J37/256
CPC分类号： H01J37/26 , H01J2237/2817
摘要： A mask inspection apparatus of the present invention includes an electron gun for irradiating an electron beam onto a mask with a pattern formed thereon, an electron lens for magnifying an electro-optic mask image passed through the mask, a fluorescent screen for converting the magnified electro-optic mask image to an optical mask image, an optical lens for optically magnifying the optical mask image, a detector for detecting the magnified optical mask image, and a comparator for inspection a defect in the pattern on the basis of the image. By doing so, it is possible to suppress aberrations resulting from the electro-optic magnification and, in addition, inspect the pattern with a high resolution through optical magnification. It is also possible to inspect the mask at its area and to inspect a defect at high speeds.
摘要翻译：本发明的掩模检查装置包括：电子枪，用于将电子束照射到形成在其上的图案的掩模上;电子透镜，用于放大通过掩模的电光掩模图像;荧光屏，用于转换放大电 - 光学掩模图像到光学掩模图像，用于光学放大光学掩模图像的光学透镜，用于检测放大的光学掩模图像的检测器，以及用于基于图像检查图案中的缺陷的比较器。通过这样做，可以抑制由电光放大产生的像差，并且还可以通过光学放大率以高分辨率检查图案。也可以在其区域检查面罩，并高速检查缺陷。

4. 发明授权

US06248508B1 Manufacturing a circuit element 失效
标题翻译：一种制造电路元件的方法
公开(公告)号：US06248508B1
公开(公告)日：2001-06-19
申请号：US09042653
申请日：1998-03-17
申请人： Ken-ichi Murooka , Hitoshi Higurashi
发明人： Ken-ichi Murooka , Hitoshi Higurashi
IPC分类号： G03F722
CPC分类号： B82Y10/00 , G03F7/2022 , G03F7/70466
摘要： The present invention provides a method of manufacturing a circuit element which includes a step of performing first exposure for transferring a pattern having a narrowed portion for forming a particular pattern, onto an exposure-target substrate, and a step of moving the pattern in a direction not parallel to a segment forming an outer circumference of the narrowed portion and performing second exposure for transferring the pattern onto the exposure-target substrate.
摘要翻译：本发明提供了一种制造电路元件的方法，该方法包括以下步骤：对曝光目标基片进行第一次曝光，将具有用于形成特定图案的变细部分的图案转印到曝光对象基板上，不平行于形成狭窄部分的外周的部分，并且执行用于将图案转印到曝光目标基板上的第二曝光。

5. 发明授权

US5166962A X-ray mask, method of manufacturing the same, and exposure method using the same 失效
标题翻译： X射线掩模，其制造方法和使用其的曝光方法
公开(公告)号：US5166962A
公开(公告)日：1992-11-24
申请号：US816723
申请日：1992-01-03
申请人： Ken-ichi Murooka , Masamitsu Itoh
发明人： Ken-ichi Murooka , Masamitsu Itoh
IPC分类号： C01B31/36 , G03F1/22 , G21K1/10 , H01L21/027 , H01L21/205
CPC分类号： G03F1/22 , G21K1/10
摘要： An X-ray mask includes an X-ray transmitting thin film consisting of SiC, a W X-ray absorber formed on one surface of the thin film and having a predetermined pattern, and a support frame arranged on a peripheral portion of the thin film. The thin film is constituted by a plurality of SiC layers having different C/Si composition ratios. When the thin film is formed by a CVD method, the flow rate of a gas containing Si is fixed while a gas containing C or a diluted gas mixture of the gas containing C is changed. Consequently, the visible light transmittance of the thin film is improved.
摘要翻译： X射线掩模包括由SiC构成的X射线透射薄膜，形成在薄膜的一个表面上并具有预定图案的W X射线吸收体，以及布置在薄膜的周边部分上的支撑框架。该薄膜由具有不同C / Si组成比的多个SiC层构成。当通过CVD法形成薄膜时，含有Si的气体的流量是固定的，而包含C的气体或包含C的气体的稀释气体混合物改变。因此，提高了薄膜的可见光透射率。

6. 发明授权

US6028317A Charged particle beam optical element charged particle beam exposure apparatus and method of adjusting the same 失效
标题翻译：带电粒子束光学元件带电粒子束曝光装置及其调整方法
公开(公告)号：US6028317A
公开(公告)日：2000-02-22
申请号：US5640
申请日：1998-01-12
申请人： Ken-ichi Murooka , Munehiro Ogasawara , Hitoshi Sunaoshi
发明人： Ken-ichi Murooka , Munehiro Ogasawara , Hitoshi Sunaoshi
IPC分类号： G21K1/087 , G21K1/093 , H01J3/18 , H01J37/12 , H01J37/14 , H01J37/305 , H01L21/027 , G21K1/08 , H01J3/14
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G21K1/087 , H01J3/18 , H01J37/12 , H01J2237/121 , H01J2237/151 , H01J2237/153 , H01J2237/3175
摘要： An optical element includes two electrodes 1 and 2 arranged at a distance to oppose each other and configured to converge an electron beam. The opposing surfaces of the electrodes 1 and 2 are so formed as to be cylindrically symmetrical along the beam passing direction and to form curves obtained by deforming hyperbolas in a direction perpendicular to the beam passing direction, in order that an electric field whose effective part except for an arbitrary constant of the field potential is given by.phi.=(k/2)r.sup.2 -.alpha.lnr-kz.sup.2is spatially partially formed in a cylindrical coordinate system defined by (r, z, .theta.).
摘要翻译：光学元件包括两个彼此相对配置的距离并配置成会聚电子束的电极1和2。电极1和2的相对表面被形成为沿着光束通过方向为圆柱对称，并且形成通过使垂直于光束通过方向的方向使双曲线变形而获得的曲线，以便将有效部分除外对于场电位的任意常数由phi =（k / 2）给出，r2-α1nr-kz2在空间上部分地形成在由（r，z，θ）定义的圆柱坐标系中。

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