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    • 7. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US08852390B2
    • 2014-10-07
    • US12748702
    • 2010-03-29
    • Daisuke Hayashi
    • Daisuke Hayashi
    • C23F1/00C23C16/00H01L21/306H01J37/32
    • H01J37/32568H01J37/32018H01J37/32458H01J37/32577H01J37/32908H01J2237/024H01J2237/1502H01J2237/327H01J2237/334H01L21/67069
    • A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. In the substrate processing apparatus, a high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber. At least one low dielectric member is provided in a second space between the movable electrode and the end wall on one side of the cylindrical shaped chamber.
    • 一种基板处理装置,包括:圆筒形室,其构造成容纳基板; 可移动电极,其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。 在基板处理装置中,向可动电极和对置电极之间的第一空间施加高频电力,向其中引入处理气体,并且可动电极不与圆筒形室的侧壁接触。 至少一个低电介质构件设置在可动电极和位于圆柱形腔的一侧的端壁之间的第二空间中。
    • 10. 发明授权
    • Movable gas introduction structure and substrate processing apparatus having same
    • 可移动气体导入结构和具有该活性气体导入结构的基板处理装置
    • US08568554B2
    • 2013-10-29
    • US12610747
    • 2009-11-02
    • Daisuke Hayashi
    • Daisuke Hayashi
    • C23C16/455C23C16/50C23C16/505C23C16/509C23F1/00H01L21/306C23C16/06C23C16/22
    • H01J37/3244
    • In a gas introduction structure that is reciprocatingly movable in a predetermined direction, a processing gas introduction system is configured to introduce a processing gas into a processing chamber in which a substrate is subjected to a predetermined processing under a clean atmosphere; and a processing gas supply line is configured to be connected to the processing gas introduction system and an external processing gas supply source to supply the processing gas from the processing gas supply source to the processing gas introduction system, mutual relative positions of the processing gas supply source and the processing gas introduction system being changed. The processing gas supply line includes: a first bendable portion connected to the processing gas supply source; a second bendable portion connected to the processing gas introduction system; and a non-bendable pipe interposed between the first bendable portion and the second bendable portion.
    • 在能够沿预定方向往复运动的气体导入结构中,处理气体导入系统将处理气体导入到处理室中,在处理室中,在干净的气氛下进行规定的处理; 并且处理气体供给管线被配置为连接到处理气体引入系统和外部处理气体供应源,以将来自处理气体供应源的处理气体供应到处理气体引入系统,处理气体供应的相对位置 来源和加工气体导入系统正在改变。 处理气体供应管线包括:连接到处理气体供应源的第一可弯曲部分; 连接到处理气体引入系统的第二可弯曲部分; 以及插入在所述第一可弯曲部和所述第二可弯曲部之间的不可弯曲的管。