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    • 2. 发明授权
    • Gas shower structure and substrate processing apparatus
    • 气体淋浴结构和基材加工设备
    • US09550194B2
    • 2017-01-24
    • US13020104
    • 2011-02-03
    • Daisuke HayashiKoichi Murakami
    • Daisuke HayashiKoichi Murakami
    • C23C16/455B05B1/18C23C16/00C23F1/08
    • B05B1/18C23C16/00C23C16/455C23F1/08
    • Screws 4 are inserted from a bottom surface of a ceiling plate 32 and screwed to a base plate 31, and the ceiling plate 32 and the base plate 31 are press-connected to each other by an elastic restoring force of an elastic member 51 interposed between a head of the screw 4 and the ceiling plate 32. A gap is formed between the head and the ceiling plate 32. Further, a periphery of the head is covered with a cover via a ring-shaped elastic member 52. In another embodiment, a periphery of a base plate 31 is protruded from a periphery of a ceiling plate 32, and the protruded portion of the base plate 31 and a ring-shaped clamp positioned at an outer side of the ceiling plate 32 are joined by screws. Here, an elastic member is interposed between the clamp and the ceiling plate 32.
    • 螺钉4从顶板32的底面插入并拧到基板31上,顶板32和基板31通过弹性件51的弹性回复力彼此压接, 螺钉4的头部和顶板32.在头部和顶板32之间形成有间隙。此外,头部的周围通过环形弹性构件52被盖覆盖。在另一个实施例中, 基板31的周边从顶板32的周边突出,并且基板31的突出部分和位于顶板32的外侧的环形夹具通过螺钉接合。 这里,弹性构件插入在夹具和顶板32之间。
    • 5. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US08968513B2
    • 2015-03-03
    • US13046925
    • 2011-03-14
    • Daisuke Hayashi
    • Daisuke Hayashi
    • C23C16/00C23F1/00H01L21/306H01J7/24H05B31/26H01J37/32
    • H01J37/32541H01J37/32091H01J37/3255H01J37/32568
    • An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber 100 and generating plasma by a high frequency power and performing a plasma process on a wafer W by the plasma. The plasma processing apparatus includes a dielectric base 105a having a multiple number of fine holes A; a varying member 200 as the moving body provided with a multiple number of rod-shaped members B capable of being inserted into and separated from the fine holes A; and a driving mechanism 215 configured to drive the varying member 200 to allow the rod-shaped members B to be inserted into and separated from the fine holes A.
    • 通过使用均质材料和移动体制成的电极来控制用于产生等离子体的高频功率电场的强度分布。 提供了一种用于将处理气体引入可抽空处理室100中并通过高频功率产生等离子体并且通过等离子体对晶片W执行等离子体处理的等离子体处理装置。 等离子体处理装置包括具有多个细孔A的电介质基底105a; 作为移动体的变化构件200设置有能够插入到细孔A中并与其分离的多个杆状构件B; 以及驱动机构215,其构造成驱动可变构件200以允许杆状构件B插入并从细孔A中分离。