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1. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

2. 发明授权

US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L33/44 , H01L33/08 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

3. 发明申请

US20120292592A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：半导体发光器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292592A1
公开(公告)日：2012-11-22
申请号：US13218909
申请日：2011-08-26
申请人： Jongil HWANG , Tomonari Shioda , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Jongil HWANG , Tomonari Shioda , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04 , H01L33/26
CPC分类号： H01L33/32 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。第一半导体层通过基底层形成在硅衬底上。发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0

4. 发明申请

US20120007113A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

5. 发明申请

US20120292632A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 失效
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292632A1
公开(公告)日：2012-11-22
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32 , H01L21/20 , H01L29/20
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层和功能层。基底层形成在形成在硅衬底上的含Al氮化物半导体层上。基础层的厚度不小于1微米，包括GaN。功能层设置在基础层上。功能层包括第一半导体层。第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

6. 发明申请

US20120032215A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120032215A1
公开(公告)日：2012-02-09
申请号：US13034329
申请日：2011-02-24
申请人： Shinji SAITO , Jongil Hwang , Shinya Nunoue
发明人： Shinji SAITO , Jongil Hwang , Shinya Nunoue
IPC分类号： H01L33/60 , H01L33/32
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.
摘要翻译：一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。端面垂直于脊条形状的延伸方向。端面层具有比有源层宽的带隙。端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

7. 发明申请

US20110216798A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110216798A1
公开(公告)日：2011-09-08
申请号：US12873821
申请日：2010-09-01
申请人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
发明人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
IPC分类号： H01S5/22 , H01S5/323 , H01L33/30
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下。

8. 发明申请

US20100148203A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100148203A1
公开(公告)日：2010-06-17
申请号：US12638354
申请日：2009-12-15
申请人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
发明人： Rei HASHIMOTO , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/644 , H01S5/02292 , H01S5/32341
摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
摘要翻译：提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件荧光体层的。

9. 发明申请

US20090185589A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20090185589A1
公开(公告)日：2009-07-23
申请号：US12408810
申请日：2009-03-23
申请人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
发明人： Yasushi HATTORI , Shinji Saito , Shinya Nunoue , Eiji Muramoto , Koichi Tachibana , Saori Abe , Jongil Hwang , Maki Sugai
IPC分类号： H01S3/10 , F21V9/16 , G02F1/35
CPC分类号： H01L33/507 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/021 , H01S5/0213 , H01S5/18 , H01S5/183 , H01S5/2027 , H01S5/327 , H01S5/34333 , H01S5/42 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.
摘要翻译：一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与激发光的波长不同的光的荧光材料，并且板状波长转换构件为整个发射可见光。

10. 发明授权

US08692287B2 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体器件，氮化物半导体晶片，以及氮化物半导体层的制造方法
公开(公告)号：US08692287B2
公开(公告)日：2014-04-08
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

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