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1. 发明授权

US08649408B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08649408B2
公开(公告)日：2014-02-11
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

2. 发明授权

US08457167B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US08457167B2
公开(公告)日：2013-06-04
申请号：US12873821
申请日：2010-09-01
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Jongil Hwang , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。。

3. 发明申请

US20120228581A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120228581A1
公开(公告)日：2012-09-13
申请号：US13215628
申请日：2011-08-23
申请人： Jongil HWANG , Hung Hung , Yasushi Hattori , Rei Hashimoto , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Jongil HWANG , Hung Hung , Yasushi Hattori , Rei Hashimoto , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/3063 , H01S2304/04
摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.
摘要翻译：根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。氮化镓铝层中的铟浓度在1E18原子/ cm3至1E20原子/ cm3之间。碳浓度等于或小于6E17原子/ cm3。当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

4. 发明申请

US20110216799A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20110216799A1
公开(公告)日：2011-09-08
申请号：US12874440
申请日：2010-09-02
申请人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
发明人： Rei Hashimoto , Maki Sugai , Jongil Hwang , Yasushi Hattori , Shinji Saito , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/02461
摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.
摘要翻译：根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及一对由绝缘体制成的掩埋层，以埋置凹槽。沟槽的底面随着条纹的距离增加而变浅。

5. 发明申请

US20110216554A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110216554A1
公开(公告)日：2011-09-08
申请号：US12876675
申请日：2010-09-07
申请人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
发明人： Yasushi HATTORI , Masaki Tohyama , Shinji Saito , Shinya Nunoue , Rei Hashimoto , Jongil Hwang , Maki Sugai , Takanobu Ueno , Junichi Kinoshita , Misaki Ueno
IPC分类号： F21V7/22
CPC分类号： F21V7/22
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。发光器件具有发射激光束的半导体激光二极管。该装置具有导光部件，该导光部件包括上表面，下表面，彼此相对的两个侧面以及彼此相对的两个端面，激光束从光导部件的第一端面入射，导光部件在下表面具有凹陷，激光束被下表面反射并在上表面方向上发射。发光装置还具有设置在导光部件的上表面侧的发光部件，并且吸收从导光部件发射的激光束并发出可见光。并且该装置具有与导光部件的下表面和两个侧面接触的物质，该物质的折射率低于导光部件的折射率。

6. 发明授权

US06700251B2 Vibrating device for axially vibrating a movable member 失效
标题翻译：用于使活动件轴向振动的振动装置
公开(公告)号：US06700251B2
公开(公告)日：2004-03-02
申请号：US10282232
申请日：2002-10-29
申请人： Takashi Kobayashi , Masaki Tohyama , Kenshi Aihara , Akira Nikaido , Kazumi Miyamoto , Naoki Miura
发明人： Takashi Kobayashi , Masaki Tohyama , Kenshi Aihara , Akira Nikaido , Kazumi Miyamoto , Naoki Miura
IPC分类号： H02K706
CPC分类号： H02K33/02
摘要： A cup-shaped yoke is axially movably provided in a cylindrical frame, and a cylindrical permanent magnet is securely provided in the yoke. A coil bobbin is cantilevered in the frame and inserted in a space between the yoke and the permanent magnet, and a driving coil is mounted on the coil bobbin. The yoke is held by a pair of coil springs for resiliently holding the yoke in the frame.
摘要翻译：圆柱形框架中轴向可移动地设置有一个杯形磁轭，并且在磁轭中牢固地设有圆柱形的永久磁铁。线圈骨架在框架中悬臂，并插入在磁轭和永磁体之间的空间中，驱动线圈安装在线圈架上。磁轭由一对螺旋弹簧保持，用于将轭架弹性地保持在框架中。

7. 发明授权

US08348468B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08348468B2
公开(公告)日：2013-01-08
申请号：US12876738
申请日：2010-09-07
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
IPC分类号： F21V11/02
CPC分类号： F21K9/64 , F21K9/232 , F21V3/00 , F21Y2101/00 , F21Y2115/30
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

8. 发明申请

US20120106127A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120106127A1
公开(公告)日：2012-05-03
申请号：US13285686
申请日：2011-10-31
申请人： Yasushi HATTORI , Masaki TOHYAMA , Junichi KINOSHITA , Yoji KAWASAKI , Yuji TAKEDA , Misaki UENO
发明人： Yasushi HATTORI , Masaki TOHYAMA , Junichi KINOSHITA , Yoji KAWASAKI , Yuji TAKEDA , Misaki UENO
IPC分类号： F21V8/00 , F21V9/16
CPC分类号： G02B6/001 , F21K9/232 , F21K9/61 , F21K9/68 , F21V3/00 , F21V7/005 , F21V7/22 , F21V9/30 , F21W2131/103 , F21Y2115/10 , F21Y2115/30 , G02B6/005
摘要： A light emitting device includes a light source capable of emitting emission light, a first phosphor layer and an optical waveguide. A first phosphor layer has at least a first surface and a second surface on an opposite side of the first surface, extends in a light guiding direction, and is capable of absorbing the emission light and emitting first wavelength converted light having a longer wavelength than the emission light. The optical waveguide has a reflector. And the optical waveguide has an input surface of the emission light, a reflection surface being in contact with the first surface of the first phosphor layer and provided on a surface of the reflector, and an output surface spaced from the first phosphor layer. The reflection surface and the output surface extend in the light guiding direction.
摘要翻译：发光器件包括能够发射发射光的光源，第一荧光体层和光波导。第一荧光体层具有在第一表面的相对侧上的至少第一表面和第二表面，在导光方向上延伸，并且能够吸收发光并发射波长比第一波长长的波长的第一波长转换光发射光。光波导具有反射器。并且光波导具有发射光的输入表面，反射表面与第一荧光体层的第一表面接触并设置在反射器的表面上，以及与第一荧光体层间隔开的输出表面。反射面和输出面在导光方向上延伸。

9. 发明申请

US20120007113A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120007113A1
公开(公告)日：2012-01-12
申请号：US13032907
申请日：2011-02-23
申请人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
发明人： Jongil Hwang , Shinji Saito , Maki Sugai , Rei Hashimoto , Yasushi Hattori , Masaki Tohyama , Shinya Nunoue
IPC分类号： H01L33/26
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。第一部分的带隙能量小于第二部分的带隙能量。

10. 发明申请

US20110216552A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110216552A1
公开(公告)日：2011-09-08
申请号：US12876738
申请日：2010-09-07
申请人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
发明人： Yasushi Hattori , Shinji Saito , Shinya Nunoue , Masaki Tohyama
IPC分类号： F21V8/00 , F21V9/16
CPC分类号： F21K9/64 , F21K9/232 , F21V3/00 , F21Y2101/00 , F21Y2115/30
摘要： An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.
摘要翻译：本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

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