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    • 5. 发明申请
    • LIGHT EMITTING DEVICE
    • 发光装置
    • US20110216554A1
    • 2011-09-08
    • US12876675
    • 2010-09-07
    • Yasushi HATTORIMasaki TohyamaShinji SaitoShinya NunoueRei HashimotoJongil HwangMaki SugaiTakanobu UenoJunichi KinoshitaMisaki Ueno
    • Yasushi HATTORIMasaki TohyamaShinji SaitoShinya NunoueRei HashimotoJongil HwangMaki SugaiTakanobu UenoJunichi KinoshitaMisaki Ueno
    • F21V7/22
    • F21V7/22
    • An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution. The light emitting device has a semiconductor laser diode that emits a laser beam. And the device has a light guide component that includes an upper surface, a lower surface, two side faces opposite each other, and two end faces opposite each other, the laser beam being incident from a first end face of the light guide component, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction. The light emitting device also has a luminous component that is provided on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light. And the device has a substance that is in contact with the lower surface and two side faces of the light guide component, a refractive index of the substance being lower than that of the light guide component.
    • 本发明的实施例提供了一种发光器件,其中使用半导体激光二极管作为光源以有效地获得具有高亮度分布均匀性的可见光。 发光器件具有发射激光束的半导体激光二极管。 该装置具有导光部件,该导光部件包括上表面,下表面,彼此相对的两个侧面以及彼此相对的两个端面,激光束从光导部件的第一端面入射, 导光部件在下表面具有凹陷,激光束被下表面反射并在上表面方向上发射。 发光装置还具有设置在导光部件的上表面侧的发光部件,并且吸收从导光部件发射的激光束并发出可见光。 并且该装置具有与导光部件的下表面和两个侧面接触的物质,该物质的折射率低于导光部件的折射率。
    • 9. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 半导体发光器件
    • US20120007113A1
    • 2012-01-12
    • US13032907
    • 2011-02-23
    • Jongil HwangShinji SaitoMaki SugaiRei HashimotoYasushi HattoriMasaki TohyamaShinya Nunoue
    • Jongil HwangShinji SaitoMaki SugaiRei HashimotoYasushi HattoriMasaki TohyamaShinya Nunoue
    • H01L33/26
    • H01L33/06H01L33/32
    • According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.
    • 根据一个实施例,半导体发光器件包括n型半导体层,p型半导体层,阱层,阻挡层,含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层,阻挡层,含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量,比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量,并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。