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1. 发明授权

US08452144B2 Light emitter and light emitting device 失效
标题翻译：发光器和发光器件
公开(公告)号：US08452144B2
公开(公告)日：2013-05-28
申请号：US13034128
申请日：2011-02-24
申请人： Shinji Saito , Yasushi Hattori , Rei Hashimoto , Shinya Nunoue
发明人： Shinji Saito , Yasushi Hattori , Rei Hashimoto , Shinya Nunoue
IPC分类号： G02B6/02
CPC分类号： H05B33/145
摘要： A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion.
摘要翻译：根据一个实施例的发光体具有纤维形状。并且它包括含有发光材料的芯部分，该材料吸收激发光并发射具有比激发光的波长更长的波长的光。并且还包括设置在芯部外侧的包层部分，所述包层部分具有第一区域和第二区域，所述第二区域周期性地形成在所述第一区域中，所述第二区域的折射率高于第一区域的折射率第一区域的折射率等于或高于芯部分的折射率。

2. 发明授权

US08432947B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08432947B2
公开(公告)日：2013-04-30
申请号：US12719468
申请日：2010-03-08
申请人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
发明人： Maki Sugai , Shinji Saito , Rei Hashimoto , Yasushi Hattori , Shinya Nunoue
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/16 , H01S5/164 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S2301/18
摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion
摘要翻译：一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。第二半导体层包括脊部和宽部。沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。沿着第二方向的宽部的宽度比脊部宽。沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

3. 发明授权

US08369375B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08369375B2
公开(公告)日：2013-02-05
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi Hattori , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S3/04 , H01S5/00 , H01S3/091
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

4. 发明申请

US20120080638A1 MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING-USE MAGNETIC POWDER AND METHOD OF PREPARING THE SAME 审中-公开
标题翻译：磁记录介质，磁记录用磁粉及其制备方法
公开(公告)号：US20120080638A1
公开(公告)日：2012-04-05
申请号：US13242310
申请日：2011-09-23
申请人： Yasushi HATTORI
发明人： Yasushi HATTORI
IPC分类号： H01F1/36 , C01G49/02
CPC分类号： C01G49/0036 , B82Y30/00 , C01P2002/60 , C01P2004/64 , C01P2006/12 , C01P2006/42 , G11B5/70 , G11B5/70678 , G11B5/714 , H01F1/11
摘要： An aspect of the present invention relates to a magnetic recording medium comprising a magnetic layer comprising ferromagnetic powder and a binder, wherein the ferromagnetic powder is magnetic powder comprised of gathering magnetic particles, the magnetic particles are a reduction product of hexagonal ferrite magnetic particles wherein a ratio Dc/Dtem of a crystallite size Dc obtained from a diffraction peak of a (220) plane to a particle diameter Dtem in a direction perpendicular to a (220) plane as determined by a transmission electron microscope ranges from 0.90 to 0.75.
摘要翻译：本发明的一个方面涉及一种磁记录介质，其包括含有铁磁性粉末和粘合剂的磁性层，其中铁磁性粉末是由磁性颗粒聚集的磁性粉末，磁性颗粒是六方晶系铁氧体磁性颗粒的还原产物，其中a 通过透射电子显微镜测定的从（220）面的衍射峰到与垂直于（220）面的方向的粒径Dtem获得的微晶尺寸Dc的比Dc / Dtem为0.90〜0.75。

5. 发明授权

US08124995B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08124995B2
公开(公告)日：2012-02-28
申请号：US12493585
申请日：2009-06-29
申请人： Yasushi Hattori , Shinji Saito , Ryosuke Hiramatsu , Shinya Nunoue , Iwao Mitsuishi , Naotoshi Matsuda
发明人： Yasushi Hattori , Shinji Saito , Ryosuke Hiramatsu , Shinya Nunoue , Iwao Mitsuishi , Naotoshi Matsuda
IPC分类号： H01L33/00
CPC分类号： H01S5/02292 , G02F1/353 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/32341 , H01S5/327 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light.
摘要翻译：半导体发光装置包括从紫外到可见光区域发光的半导体发光元件和吸收从半导体发光元件发出的光并输出可见光的可见光发光元件。可见光发光元件包括基板，形成在基板上并含有光散射粒子的光反射层和含有荧光体粒子的发光层。发光层吸收从半导体发光元件发射的光并输出可见光。发光层进一步吸收从半导体发光元件发射的光，到达并被光散射粒子反射，并输出可见光。

6. 发明申请

US20110216798A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110216798A1
公开(公告)日：2011-09-08
申请号：US12873821
申请日：2010-09-01
申请人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
发明人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
IPC分类号： H01S5/22 , H01S5/323 , H01L33/30
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下。

7. 发明申请

US20110177635A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110177635A1
公开(公告)日：2011-07-21
申请号：US13078240
申请日：2011-04-01
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
IPC分类号： H01L33/50
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.
摘要翻译：发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

8. 发明授权

US07935978B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07935978B2
公开(公告)日：2011-05-03
申请号：US12401692
申请日：2009-03-11
申请人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
发明人： Iwao Mitsuishi , Shinya Nunoue , Yasushi Hattori , Kuniaki Konno
IPC分类号： H01L33/00 , H01L27/15 , H01L31/12
CPC分类号： F21K9/00 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2924/3511 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes: a substrate having a concave portion formed on a surface thereof; a light emitting element emitting a first light which is a blue light or a near-ultraviolet light; a resin sheet being a deformable resin sheet formed on the substrate so as to cover the light emitting element; a first transmissive layer formed in a hemispherical shape on the first region of the resin sheet, and transmitting the first light; a color conversion layer including a fluorescent material that converts the first light into a second light of a different wavelength from that of the first light and a transmissive material that transmits the first light, the color conversion layer covering the first transmissive layer in such a manner that an end portion reaches an upper face of the resin sheet; and a second transmissive layer covering the color conversion layer in such a manner that an end portion reaches the upper face of the resin sheet, and transmitting the first light and the second light.
摘要翻译：发光器件包括：在其表面上形成有凹部的基板; 发射蓝光或近紫外光的第一光的发光元件; 树脂片，其是形成在所述基板上以覆盖所述发光元件的可变形树脂片; 在所述树脂片的所述第一区域上形成为半球形的第一透射层，并透射所述第一光; 颜色转换层，其包括将第一光转换成与第一光不同的波长的第二光和透射第一光的透射材料的荧光材料，以这种方式覆盖第一透射层的颜色转换层端部到达树脂片的上表面; 以及第二透射层，其以使得端部到达树脂片的上表面并且透射第一光和第二光的方式覆盖颜色转换层。

9. 发明申请

US20100246628A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100246628A1
公开(公告)日：2010-09-30
申请号：US12729636
申请日：2010-03-23
申请人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
发明人： Yasushi HATTORI , Rei Hashimoto , Shinji Saito , Maki Sugai , Shinya Nunoue
IPC分类号： H01S5/026
CPC分类号： H01S5/02296 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/02216 , H01S5/0228 , H01S5/32341 , H01S5/327
摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.
摘要翻译：公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上，可见光发射器与封装件接触。

10. 发明授权

US07781958B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07781958B2
公开(公告)日：2010-08-24
申请号：US11857233
申请日：2007-09-18
申请人： Yasushi Hattori , Shinji Saito , Sinya Nunoue , Genichi Hatakoshi , Koichi Tachibana , Naomi Shida , Iwao Mitsuishi
发明人： Yasushi Hattori , Shinji Saito , Sinya Nunoue , Genichi Hatakoshi , Koichi Tachibana , Naomi Shida , Iwao Mitsuishi
IPC分类号： H05B33/00 , H01J1/62 , H01J63/04
CPC分类号： H01L33/507 , H01L33/44 , H01L33/60 , H01L2224/45144 , H01L2224/48091 , Y10S362/80 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.
摘要翻译：发光器件包括发射激发光的发光元件和荧光元件。荧光元件包括面向发光元件的半透明膜，并透射激发光; 第一发光膜，包括用于吸收透过半透明膜的激发光并发射具有与激发光不同的波长的可见光的荧光体; 以及反射膜，其设置在配置有半透明膜的第一发光膜的相反侧，将透过第一发光膜的激发光朝向第一发光膜反射。

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