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1. 发明授权

US09412910B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09412910B2
公开(公告)日：2016-08-09
申请号：US13030453
申请日：2011-02-18
申请人： Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42 , H01L33/44
CPC分类号： H01L33/44 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光部分，第一透明导电层和第二透明导电层。发光部分设置在第一和第二半导体层之间。第二半导体层设置在第一透明导电层和发光部之间。第一透明导电层包括氧。第二透明导电层设置在第二半导体层和第一透明导电层之间。第二透明导电层的折射率高于第一透明导电层的折射率，并且包括浓度高于第一透明导电层中包含的氧浓度的氧。

2. 发明授权

US08766297B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08766297B2
公开(公告)日：2014-07-01
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/36 , H01L33/42
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

3. 发明授权

US08546178B2 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08546178B2
公开(公告)日：2013-10-01
申请号：US13180889
申请日：2011-07-12
申请人： Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
发明人： Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一半导体层，发光层，第二半导体层和透光性电极。基板包括沿着第一主表面的周边设置的第一区域和设置在从第一区域观察的第一主表面的中心侧的第二区域。第一半导体层设置在基板的第一主表面上。发光层设置在第一半导体层上。第二半导体层设置在发光层上。半透明电极设置在第二半导体层上。第二区域的反射率高于第一区域的反射率。

4. 发明授权

US08525194B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效
公开(公告)号：US08525194B2
公开(公告)日：2013-09-03
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

5. 发明申请

US20120056220A1 SEMICONDUCTOR LIGHT EMMITING DEVICE 失效
标题翻译：半导体照明装置
公开(公告)号：US20120056220A1
公开(公告)日：2012-03-08
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

6. 发明申请

US20100318081A1 HIGH-FREQUENCY SURGICAL APPARATUS AND HIGH-FREQUENCY SURGICAL METHOD FOR CLOSURE OF PATENT FORAMEN OVALE 有权
标题翻译：高频外科手术器械和高频手术方法
公开(公告)号：US20100318081A1
公开(公告)日：2010-12-16
申请号：US12484650
申请日：2009-06-15
申请人： Taisuke SATO , Manabu ISHIKAWA
发明人： Taisuke SATO , Manabu ISHIKAWA
IPC分类号： A61B18/14
CPC分类号： A61B18/1206 , A61B18/1492 , A61B2017/003 , A61B2018/00351 , A61B2018/124
摘要： A high-frequency surgical apparatus for treating patent foramen ovale in a heart includes a flexible probe which has such a length as to allow the probe to be placed in the patent foramen ovale by passing through the blood vessel; an electrode section which, being placed at a distal end of the probe, has three or more electrodes along a longitudinal direction of the probe; a high-frequency power supply section which supplies predetermined high-frequency power to the patent foramen ovale via the electrode section; a switching section which switches among a plurality of signal lines connected to the three or more electrodes; and a high-frequency power control section which controls switching of the switching section so as to supply the high-frequency power to two electrodes.
摘要翻译：用于治疗心脏中卵孔卵泡的高频手术装置包括：具有如下长度的柔性探针，该探针通过穿过血管将探针放置在卵孔中; 放置在探针的前端的电极部沿着探针的长度方向具有3个以上的电极; 高频电源部，其经由所述电极部向所述卵孔孔提供预定的高频电力; 切换部，其切换与所述三个以上的电极连接的多条信号线; 以及高频功率控制部，其控制切换部的切换，以向两个电极提供高频电力。

7. 发明申请

US20100106158A1 High-frequency surgical apparatus and high-frequency surgical method for closure of patent foramen ovale 有权
标题翻译：高频手术器械和高频手术方法闭合卵圆孔
公开(公告)号：US20100106158A1
公开(公告)日：2010-04-29
申请号：US12257909
申请日：2008-10-24
申请人： Taisuke SATO
发明人： Taisuke SATO
IPC分类号： A61B18/14 , A61B5/053
CPC分类号： A61B18/1477 , A61B18/1492 , A61B2017/00575 , A61B2018/0016 , A61B2018/00351 , A61B2018/00357 , A61B2018/0063 , A61B2018/00702 , A61B2018/00875 , A61B2018/1425 , A61B2018/1497
摘要： A high-frequency surgical PFO closure apparatus used to treat patent foramen ovale in the heart includes a first and second electrodes which grasp living tissue of the patent foramen ovale; a high-frequency power supply section which supplies high-frequency power to the living tissue via the electrodes; an impedance measuring section which measures an impedance value by supplying high-frequency power to the living tissue; a grasping condition determining section which determines, based on the measured impedance value, a grasping condition regarding how the living tissue is grasped in blood by the electrodes; and a control section which controls high-frequency power supply at a predetermined power level needed to treat the patent foramen ovale, according to a result of the determination.
摘要翻译：用于治疗心脏卵孔的高频手术PFO封闭装置包括：掌握卵圆孔卵泡的活组织的第一和第二电极; 高频电源部，其经由所述电极向所述生物体组织供给高频电力; 阻抗测量部，其通过向所述生物体组织提供高频电力来测量阻抗值; 抓取条件确定部，其基于所测量的阻抗值，确定关于如何通过所述电极将活体组织夹在血液中的抓取条件; 以及控制部，其根据所述判定的结果，以预定的功率水平来控制治疗所述卵泡孔的所述专利的高频电源。

8. 发明授权

US06740085B2 Heating treatment system 有权
标题翻译：加热处理系统
公开(公告)号：US06740085B2
公开(公告)日：2004-05-25
申请号：US10014698
申请日：2001-11-13
申请人： Norihiko Hareyama , Taisuke Sato
发明人： Norihiko Hareyama , Taisuke Sato
IPC分类号： A61B1818
CPC分类号： A61B18/085 , A61B2017/00084 , A61B2017/00119 , A61B2017/00199 , A61B2017/00973
摘要： A heating treatment system consists mainly of coagulating/incising forceps in which a plurality of heating elements are incorporated, and a main unit that feeds power to the heating elements incorporated in the coagulating/incising forceps and that drives and controls the heating elements. The main unit can be connected to coagulating/incising forceps in which up to four heating elements are incorporated. The main unit includes element temperature measurement/output control units and temperature setting units which are associated with four channels allocated to the heating elements. A control unit controls the element temperature measurement/output control units and temperature setting units. The control unit judges the type of connected forceps by referencing data stored in advance in a memory using information of the type of forceps received from the coagulating/incising forceps, and controls power feed to the heating elements.
摘要翻译：加热处理系统主要由凝结/切割镊子组成，其中结合有多个加热元件，以及主体，其将功率馈送到结合在凝结/切割钳中的加热元件，并驱动和控制加热元件。主单元可以连接到凝结/切割钳，其中最多加入四个加热元件。主单元包括元件温度测量/输出控制单元和与分配给加热元件的四个通道相关联的温度设定单元。控制单元控制元件温度测量/输出控制单元和温度设置单元。控制单元通过使用从凝固/切割钳接收到的钳子的类型的信息参考存储在存储器中的数据来判断连接的钳子的类型，并且控制对加热元件的供电。

9. 发明授权

US5873316A Vertically fully rotating hook with needle guiding surface 失效
标题翻译：垂直完全旋转钩子与针引导面
公开(公告)号：US5873316A
公开(公告)日：1999-02-23
申请号：US954126
申请日：1997-10-20
申请人： Taisuke Sato
发明人： Taisuke Sato
IPC分类号： D05B57/14 , D05B55/06 , D05B57/26
CPC分类号： D05B57/14
摘要： A wall of an inner loop taker includes a guiding surface, a first vertical surface which extends continuously to an inward end of the guiding surface in a radial direction of the inner loop taker and is parallel to an axial line of a needle, and a second vertical surface which is formed on the inward side of the first vertical surface in the radial direction of the inner loop taker but closer to the axial line of the needle than the first vertical surface and which is parallel to the axial line of the needle. A first angle between a straight line which links the inward end and an outward end of the second vertical surface in the radial direction of the inner loop taker and the axial line is smaller than a second angle between a needle tip guiding surface of the needle and the axial line, while a first length of the first vertical surface is equal to or smaller than a distance along the axial line between a bottom end portion of an inner peripheral surface of an eye of the needle and a needle tip of the needle.
摘要翻译：内环接收器的壁包括引导表面，第一垂直表面，其沿着内环接收器的径向方向连续延伸到引导表面的内端，并且平行于针的轴线，第二垂直表面所述垂直面形成在所述第一垂直面的内侧接纳器的径向内侧且比所述第一垂直面更靠近所述针的轴线且与所述针的轴线平行。在内圈接收器的径向连接内端和第二垂直面的外端的直线与轴线之间的第一角度小于针的针尖引导面和第二角度轴线，而第一垂直面的第一长度等于或小于沿针眼的内周面的底端部与针的针尖之间的轴线的距离。

10. 发明授权

US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L33/44 , H01L33/08 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

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