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    • 4. 发明申请
    • Method for preparing catalyst for partial oxidation of methylbenzenes
    • 制备甲基苯部分氧化催化剂的方法
    • US20070117717A1
    • 2007-05-24
    • US11602324
    • 2006-11-21
    • Won LeeDong LeeJong ChaeHyun Yoon
    • Won LeeDong LeeJong ChaeHyun Yoon
    • B01J23/00
    • B01J23/30B01J21/04B01J37/0036B01J37/0221B01J37/0236
    • The present invention relates to a novel method for preparing a catalyst of the formula (1), WOx wherein, W represents tungsten atom, O represents oxygen atom x represents a value determined by oxidative state of W, for partial oxidation of methylbenzenes, the method comprising: (a) a step of preparing tungsten oxide slurry by wet milling; (b) a step of supporting the slurry obtained in the step (a) on fire-resistance inorganic carrier by impregnation; (c) a step of drying the catalyst obtained in the step (b); and (d) a step of calcining the dried catalyst obtained in the step (c), and can reduce the reaction temperature on the basis of equivalent yield in the preparation of corresponding aromatic aldehyde from methylbenzenes since the catalyst has increased the surface areas compared to the conventional one, and thus has high conversion rate.
    • 本发明涉及一种制备式(1)的催化剂的新方法,其中<?in-line-formula description =“In-line Formulas”end =“lead”→> WOx <?in-line-formula description 其中,W表示钨原子,O表示氧原子,x表示由氧化态W确定的值,用于甲基苯的部分氧化,该方法包括:(a) 通过湿磨制备氧化钨浆料的步骤; (b)通过浸渍将在步骤(a)中获得的浆料支撑在耐火无机载体上的步骤; (c)干燥步骤(b)中获得的催化剂的步骤; 和(d)煅烧步骤(c)中获得的干燥催化剂的步骤,并且可以基于由甲基苯制备相应的芳族醛的当量产率来降低反应温度,因为催化剂与表面积相比增加了 因此具有高转换率。
    • 7. 发明申请
    • CMOS image sensor and method for forming the same
    • US20060121640A1
    • 2006-06-08
    • US11280694
    • 2005-11-16
    • Jong-Chae Kim
    • Jong-Chae Kim
    • H01L21/00H01L21/44
    • H01L27/14609H01L27/14687
    • A CMOS image sensor and a method for forming the same are provided. According to the method, a gate insulating layer and a doped polysilicon layer which are sequentially stacked on a substrate are patterned to form a transfer gate and a reset gate set apart from each other. A floating diffusion layer between the transfer gate and the reset gate, a light receiving element at a side of the transfer gate away from and opposite to the floating diffusion layer and a source/drain region at a side of the reset gate away from and opposite to the floating diffusion layer are formed. An insulation layer and a mold layer are sequentially formed on an entire surface of the substrate, and the mold layer is planarized until the insulation layer is exposed. The exposed insulation layer is removed to further expose an upper surface of the gates. A selective silicidation process is carried out using a metal gate layer to form a metal gate silicide on the exposed gate. The sequential steps in the selective silicidation process alleviate the metal contamination prevalent in various wet cleaning processes that may increase the malfunction of CMOS image sensors.