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1. 发明授权

US07378694B2 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US07378694B2
公开(公告)日：2008-05-27
申请号：US11284883
申请日：2005-11-23
申请人： Duk-Min Yi , Jong-Chae Kim , Jin-Hyeong Park
发明人： Duk-Min Yi , Jong-Chae Kim , Jin-Hyeong Park
IPC分类号： H01L31/062
CPC分类号： H04N5/357 , H01L27/14609
摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷像素选择信号。

2. 发明申请

US20070267658A1 Image sensor and methods of fabricating the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070267658A1
公开(公告)日：2007-11-22
申请号：US11798391
申请日：2007-05-14
申请人： Jae-Ho Song , Jong-Chae Kim , Jong-Wook Hong , Keo-Sung Park
发明人： Jae-Ho Song , Jong-Chae Kim , Jong-Wook Hong , Keo-Sung Park
IPC分类号： H01L27/10
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14632 , H01L27/14687 , H01L27/14689
摘要： An image sensor and methods of fabricating the same are provided. An example method may include forming at least one gate on a substrate, forming first, second and third layers on the at least one gate, first etching the third layer with a first etching process, the second layer configured to be resistant to the first etching process, the first etching process reducing at least a portion of the third layer and exposing at least a portion of the second layer and second etching at least the exposed portion of the second layer with a second etching process other than the first etching process, the first layer configured to be resistant to the second etching process.
摘要翻译：提供了图像传感器及其制造方法。示例性方法可以包括在衬底上形成至少一个栅极，在至少一个栅极上形成第一层，第二层和第三层，首先用第一蚀刻工艺蚀刻第三层，第二层被配置为耐第一蚀刻所述第一蚀刻工艺减少所述第三层的至少一部分并暴露所述第二层的至少一部分，并且用除了所述第一蚀刻工艺之外的第二蚀刻工艺至少蚀刻所述第二层的所述暴露部分，第一层被配置为抵抗第二蚀刻工艺。

3. 发明授权

US06218229B1 Method of fabricating semiconductor device having a dual-gate 失效
标题翻译：制造具有双栅极的半导体器件的方法
公开(公告)号：US06218229B1
公开(公告)日：2001-04-17
申请号：US08962240
申请日：1997-10-31
申请人： Kang-Sik Youn , Hong-Bae Park , Jong-Chae Kim
发明人： Kang-Sik Youn , Hong-Bae Park , Jong-Chae Kim
IPC分类号： H01L218238
CPC分类号： H01L21/823842
摘要： The method of fabricating a semiconductor device having a dual-gate provides a semiconductor substrate with a gate insulating film formed on a first portion and a second portion thereof and a polysilicon layer formed on the gate insulating film. A first dopant of a first conductive type is implanted in the polysilicon layer covering the first portion, and a second dopant of a second conductive type is implanted in the polysilicon layer covering the second portion. Then, the polysilicon layer covering the first portion is selectively etched using a first mask to form a first gate, and a third dopant of the first conductive type is implanted to form source/drain LDD regions on both sides of the first gate. Thereafter, the polysilicon layer covering the second portion is selectively etched using a second mask to form a second gate, and a fourth dopant of the second conductive type is implanted to form source/drain LDD regions on both sides of the second gate.
摘要翻译：制造具有双栅极的半导体器件的方法为半导体衬底提供形成在栅极绝缘膜上的第一部分和第二部分上形成的栅极绝缘膜和多晶硅层。将第一导电类型的第一掺杂剂注入覆盖第一部分的多晶硅层中，并且将第二导电类型的第二掺杂剂注入覆盖第二部分的多晶硅层中。然后，使用第一掩模选择性地蚀刻覆盖第一部分的多晶硅层，以形成第一栅极，并且注入第一导电类型的第三掺杂剂，以在第一栅极的两侧形成源极/漏极LDD区域。此后，使用第二掩模选择性地蚀刻覆盖第二部分的多晶硅层，以形成第二栅极，并且注入第二导电类型的第四掺杂剂，以在第二栅极的两侧上形成源极/漏极LDD区域。

4. 发明申请

US20060121640A1 CMOS image sensor and method for forming the same 有权
公开(公告)号：US20060121640A1
公开(公告)日：2006-06-08
申请号：US11280694
申请日：2005-11-16
申请人： Jong-Chae Kim
发明人： Jong-Chae Kim
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L27/14609 , H01L27/14687
摘要： A CMOS image sensor and a method for forming the same are provided. According to the method, a gate insulating layer and a doped polysilicon layer which are sequentially stacked on a substrate are patterned to form a transfer gate and a reset gate set apart from each other. A floating diffusion layer between the transfer gate and the reset gate, a light receiving element at a side of the transfer gate away from and opposite to the floating diffusion layer and a source/drain region at a side of the reset gate away from and opposite to the floating diffusion layer are formed. An insulation layer and a mold layer are sequentially formed on an entire surface of the substrate, and the mold layer is planarized until the insulation layer is exposed. The exposed insulation layer is removed to further expose an upper surface of the gates. A selective silicidation process is carried out using a metal gate layer to form a metal gate silicide on the exposed gate. The sequential steps in the selective silicidation process alleviate the metal contamination prevalent in various wet cleaning processes that may increase the malfunction of CMOS image sensors.

5. 发明申请

US20060108614A1 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US20060108614A1
公开(公告)日：2006-05-25
申请号：US11284883
申请日：2005-11-23
申请人： Duk-Min Yi , Jong-Chae Kim , Jin-Hyeong Park
发明人： Duk-Min Yi , Jong-Chae Kim , Jin-Hyeong Park
IPC分类号： H01L29/768
CPC分类号： H04N5/357 , H01L27/14609
摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.
摘要翻译：互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷像素选择信号。

6. 发明授权

US07488637B2 CMOS image sensor and method for forming the same 有权
标题翻译： CMOS图像传感器及其形成方法
公开(公告)号：US07488637B2
公开(公告)日：2009-02-10
申请号：US11280694
申请日：2005-11-16
申请人： Jong-Chae Kim
发明人： Jong-Chae Kim
IPC分类号： H01L21/8238
CPC分类号： H01L27/14609 , H01L27/14687
摘要： A CMOS image sensor and a method for forming the same are provided. According to the method, a gate insulating layer and a doped polysilicon layer which are sequentially stacked on a substrate are patterned to form a transfer gate and a reset gate set apart from each other. A floating diffusion layer between the transfer gate and the reset gate, a light receiving element at a side of the transfer gate away from and opposite to the floating diffusion layer and a source/drain region at a side of the reset gate away from and opposite to the floating diffusion layer are formed. An insulation layer and a mold layer are sequentially formed on an entire surface of the substrate, and the mold layer is planarized until the insulation layer is exposed. The exposed insulation layer is removed to further expose an upper surface of the gates. A selective silicidation process is carried out using a metal gate layer to form a metal gate silicide on the exposed gate. The sequential steps in the selective silicidation process alleviate the metal contamination prevalent in various wet cleaning processes that may increase the malfunction of CMOS image sensors.
摘要翻译：提供CMOS图像传感器及其形成方法。根据该方法，对顺序层叠在基板上的栅极绝缘层和掺杂多晶硅层进行图案化以形成彼此分离的传输栅极和复位栅极。在传输栅极和复位栅极之间的浮动扩散层，远离浮动扩散层的传输栅极侧的光接收元件和复位栅极侧面的源极/漏极区域远离和相对形成浮动扩散层。在基板的整个表面上依次形成绝缘层和模层，并且将模层平坦化，直至绝缘层露出。暴露的绝缘层被去除以进一步暴露门的上表面。使用金属栅层进行选择性硅化处理，以在暴露的栅极上形成金属栅极硅化物。选择性硅化工艺中的顺序步骤减轻了各种湿式清洗过程中普遍存在的金属污染，这可能会增加CMOS图像传感器的故障。

7. 发明申请

US20070037405A1 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers and devices so formed 失效
标题翻译：在绝缘层上形成具有钝化层的金属 - 绝缘体 - 金属（MIM）电容器和如此形成的器件的方法
公开(公告)号：US20070037405A1
公开(公告)日：2007-02-15
申请号：US11413282
申请日：2006-04-28
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01L21/31
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

8. 发明授权

US08017490B2 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers 失效
标题翻译：在介电层上形成具有钝化层的金属 - 绝缘体 - 金属（MIM）电容器的方法
公开(公告)号：US08017490B2
公开(公告)日：2011-09-13
申请号：US12784104
申请日：2010-05-20
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

9. 发明申请

US20100224588A1 METHODS OF FORMING METAL-INSULATOR-METAL (MIM) CAPACITORS WITH PASSIVATION LAYERS ON DIELECTRIC LAYERS 失效
标题翻译：在绝缘层上形成钝化层金属绝缘体金属（MIM）电容器的方法
公开(公告)号：US20100224588A1
公开(公告)日：2010-09-09
申请号：US12784104
申请日：2010-05-20
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01B13/00
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

10. 发明授权

US07749852B2 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers 失效
标题翻译：在介电层上形成具有钝化层的金属 - 绝缘体 - 金属（MIM）电容器的方法
公开(公告)号：US07749852B2
公开(公告)日：2010-07-06
申请号：US11413282
申请日：2006-04-28
申请人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
发明人： Jong-Chae Kim , Duk-Min Yi , Sang-Il Jung , Jong-Wook Hong
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
摘要翻译：形成MIM电容器的电介质层的方法可以包括在MIM电容器的电介质层上形成钝化层，以将介电层与上覆的光刻胶图案直接接触。还公开了相关的电容器结构。

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