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1. 发明申请

US20090127984A1 Motor magnetic pre-stressing apparatus 审中-公开
标题翻译：电机磁预应力装置
公开(公告)号：US20090127984A1
公开(公告)日：2009-05-21
申请号：US11984712
申请日：2007-11-21
申请人： Zhen-Yu Lee , Wen-Pin Chen , Jen-Chieh Chang , Sheng-Pin Su
发明人： Zhen-Yu Lee , Wen-Pin Chen , Jen-Chieh Chang , Sheng-Pin Su
IPC分类号： H02K7/14 , H02K1/12 , H02K1/27
CPC分类号： H02K7/09 , H02K1/2786 , H02K5/163 , H02K7/14 , H02K21/222
摘要： A motor magnetic pre-stressing apparatus includes a stator and a rotor. The rotor is pivoted with the stator. The stator includes a lower insulating frame and a magnetic-guiding ring, and the magnetic-guiding ring is installed on the lower insulating frame. The rotor has a magnetic element, and the magnetic element has even radial magnetic poles. Thereby, by utilizing the attraction between magnetic-guiding ring and the magnetic element, a magnetic pre-stressing force is generated to absorb the rotor downwards so that the rotor rotates stably and smoothly.
摘要翻译：电机磁预应力装置包括定子和转子。转子与定子枢转。定子包括下绝缘框架和导磁环，并且导磁环安装在下绝缘框架上。转子具有磁性元件，并且磁性元件具有均匀的径向磁极。因此，通过利用导磁环与磁性元件之间的吸引力，产生磁力预应力，以向下吸收转子，使转子稳定平稳地旋转。

2. 发明授权

US07375005B2 Method for reclaiming and reusing wafers 有权
标题翻译：回收再利用晶圆的方法
公开(公告)号：US07375005B2
公开(公告)日：2008-05-20
申请号：US10942690
申请日：2004-09-15
申请人： Jen-Chieh Chang , Shih-Chi Lai , Yi-Fu Chung , Chih-Shin Tsai
发明人： Jen-Chieh Chang , Shih-Chi Lai , Yi-Fu Chung , Chih-Shin Tsai
IPC分类号： H01L21/46
CPC分类号： H01L21/02079
摘要： Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semiconductor substrate; oxidizing a first part of the polysilicon layer to form a first oxide layer; removing the first oxide layer; and oxidizing a second part of the polysilicon layer to form a second oxide layer on the used wafer which is to be used as a reclaimed wafer. The nonproductive wafer is used to improve the quality of a deposition process of the polysilicon layer on one or more productive wafers.
摘要翻译：本发明的实施例提供了一种用于回收和再利用晶片的方法。在一个实施例中，一种用于回收晶片的方法包括提供使用的非生产性晶片，其具有形成在半导体衬底上的半导体衬底和多晶硅层; 氧化多晶硅层的第一部分以形成第一氧化物层; 去除第一氧化物层; 以及氧化所述多晶硅层的第二部分，以在用作再生晶片的所用晶片上形成第二氧化物层。非生产性晶片用于提高多晶硅层在一个或多个生产性晶片上的沉积工艺的质量。

3. 发明授权

US07211523B2 Method for forming field oxide 有权
标题翻译：形成场氧化物的方法
公开(公告)号：US07211523B2
公开(公告)日：2007-05-01
申请号：US11204479
申请日：2005-08-15
申请人： Yi Fu Chung , Shih-Chi Lai , Jen Chieh Chang
发明人： Yi Fu Chung , Shih-Chi Lai , Jen Chieh Chang
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76213
摘要： A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substrate in a region not covered with the barrier layer by introducing pure dry oxygen, and performing a wet oxidation process to form a second field oxide adjacent the first field oxide by introducing hydrogen and oxygen. The method of the present invention can improve the quality and electrical property of the semiconductor device, increase the yield, and reduce the cost.
摘要翻译：公开了一种形成场氧化物的方法。在一个实施例中，该方法包括提供具有衬底，衬垫氧化物和图案化阻挡层的半导体结构，进行干氧化处理以在未被阻挡层覆盖的区域中的衬底上形成第一场氧化物，通过引入纯干氧，并进行湿氧化处理，以通过引入氢和氧形成与第一场氧化物相邻的第二场氧化物。本发明的方法可以提高半导体器件的质量和电气性能，提高产量，降低成本。

4. 发明授权

US07118971B2 Method for fabricating trench power device 有权
标题翻译：沟槽功率器件的制造方法
公开(公告)号：US07118971B2
公开(公告)日：2006-10-10
申请号：US10962350
申请日：2004-10-08
申请人： Jen-Chieh Chang , Yi-Fu Chung , Tun-Fu Hung
发明人： Jen-Chieh Chang , Yi-Fu Chung , Tun-Fu Hung
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/7813 , H01L29/42368
摘要： Embodiments of the invention relate to a fabrication method of an electronic device, more particularly to a fabrication method of a power device in which an oxide layer at the bottom of the trench is provided to reduce Miller capacitance and further reduce RC delay. In one embodiment, a method for forming an oxide layer at the bottom of a trench comprises providing a first substrate with at least one trench therein; forming a first oxide layer on the bottom and sidewalls of the trench; removing the first oxide layer at the bottom of the trench; and forming a second oxide layer at the bottom of the trench.
摘要翻译：本发明的实施例涉及一种电子设备的制造方法，更具体地说，涉及一种功率器件的制造方法，其中提供了沟槽底部的氧化物层以减小米勒电容并进一步降低RC延迟。在一个实施例中，在沟槽的底部形成氧化物层的方法包括提供第一衬底中的至少一个沟槽; 在沟槽的底部和侧壁上形成第一氧化物层; 去除沟槽底部的第一氧化物层; 以及在所述沟槽的底部形成第二氧化物层。

5. 发明授权

US06991994B2 Method of forming rounded corner in trench 有权
标题翻译：在沟槽中形成圆角的方法
公开(公告)号：US06991994B2
公开(公告)日：2006-01-31
申请号：US10771688
申请日：2004-02-03
申请人： Pei-Feng Sun , Yi Fu Chung , Jen Chieh Chang
发明人： Pei-Feng Sun , Yi Fu Chung , Jen Chieh Chang
IPC分类号： H01L21/76
CPC分类号： H01L21/76235
摘要： A method for forming a trench having rounded corners in a semiconductor device comprises providing a substrate; forming a first pad oxide layer, a first silicon nitride layer, and a first oxide layer on the substrate sequentially; removing portions of the first oxide layer, the first silicon nitride layer, the first pad oxide layer, and the substrate to form at least one trench; and removing portions of the first oxide layer, the first silicon nitride layer, and the first pad oxide layer in the trench above an upper corner of the substrate in the trench. The substrate includes a lower corner at a bottom of the trench. The method further comprises forming a second pad oxide layer in the trench; forming a second silicon nitride layer on the second pad oxide layer and the first oxide layer; removing portions of the second silicon nitride layer to expose the second pad oxide layer on the corners and the bottom of the trench; forming a thermal oxide layer on the second pad oxide layer exposed by removing the portions of the second nitride layer; and removing the second silicon nitride layer, the thermal oxide layer, and the second pad oxide layer.
摘要翻译：在半导体器件中形成具有圆角的沟槽的方法包括提供衬底; 在基板上依次形成第一衬垫氧化物层，第一氮化硅层和第一氧化物层; 去除第一氧化物层，第一氮化硅层，第一衬垫氧化物层和衬底的部分，以形成至少一个沟槽; 以及在沟槽中的衬底的上角上方的沟槽中去除第一氧化物层，第一氮化硅层和第一衬垫氧化物层的部分。衬底包括沟槽底部的下角。该方法还包括在沟槽中形成第二衬垫氧化物层; 在所述第二焊盘氧化物层和所述第一氧化物层上形成第二氮化硅层; 去除第二氮化硅层的部分以暴露沟槽的角部和底部上的第二焊盘氧化物层; 通过去除所述第二氮化物层的所述部分而在所述第二焊盘氧化物层上形成热氧化层; 以及去除所述第二氮化硅层，所述热氧化物层和所述第二衬垫氧化物层。

6. 发明授权

US06709952B2 Method of forming a bottom oxide layer in a trench 有权
标题翻译：在沟槽中形成底部氧化物层的方法
公开(公告)号：US06709952B2
公开(公告)日：2004-03-23
申请号：US10453771
申请日：2003-06-02
申请人： Shih-Chi Lai , Yi-Fu Chung , Jen-Chieh Chang , Ching-Chiu Chu
发明人： Shih-Chi Lai , Yi-Fu Chung , Jen-Chieh Chang , Ching-Chiu Chu
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： Embodiments of the present invention are directed to a method of forming a bottom oxide layer in a trench on a semiconductor substrate. In one embodiment, a method for forming a bottom oxide layer in a trench on a semiconductor substrate comprises depositing an oxide layer along the surface of the sidewall and the bottom of a trench on a semiconductor substrate which has top layers, depositing a nitride layer along the surface of the said oxide layer, and forming a photo-resist filler in a trench. The top surface of the photo-resist filler is lower than the top surface of the substrate to expose a portion of the nitride layer uncovered by the photo-resist filler. The exposed portion of the nitride layer is removed to expose the oxide layer underneath. A portion of the oxide layer on the sidewalls of a trench is removed to form a bottom oxide layer in a trench.
摘要翻译：本发明的实施例涉及在半导体衬底上的沟槽中形成底部氧化物层的方法。在一个实施例中，用于在半导体衬底上的沟槽中形成底部氧化物层的方法包括沿着具有顶层的半导体衬底上的沟槽的侧壁和沟槽的表面沉积氧化物层，沿着所述氧化物层的表面，并在沟槽中形成光致抗蚀剂填料。光刻胶填料的顶表面低于衬底的顶表面，以露出未被光刻胶填料覆盖的氮化物层的一部分。去除氮化物层的暴露部分以露出下面的氧化物层。去除沟槽侧壁上的氧化物层的一部分以在沟槽中形成底部氧化物层。

7. 发明授权

US09065349B2 Control method for bidirectional DC-DC converters 有权
标题翻译：双向DC-DC转换器的控制方法
公开(公告)号：US09065349B2
公开(公告)日：2015-06-23
申请号：US13590247
申请日：2012-08-21
申请人： Wen-Jung Chiang , Jen-Chieh Chang , Hung-Tien Chen , Yu-Ting Kuo
发明人： Wen-Jung Chiang , Jen-Chieh Chang , Hung-Tien Chen , Yu-Ting Kuo
IPC分类号： H02M3/335 , H02M3/337 , H02M1/00
CPC分类号： H02M3/33584 , H02M3/337 , H02M2001/0058 , Y02B70/1491
摘要： A control method for bidirectional DC-DC converter includes: operating a bidirectional DC-DC converter having a low voltage side including a plurality of low-voltage-side switches, a voltage clamping switch and a voltage clamping capacitor, and a high voltage side including a plurality of high-voltage-side switches in a boost mode; switching the voltage clamping switch with a predetermined duty cycle prior to switching on all of the low-voltage-side switches; adjusting the predetermined duty cycle of the voltage clamping switch to be smaller than a turn-off interval of the low-voltage-side switches to reduce the conduction loss of the low-voltage-side switches and the voltage clamping switch; alternatively, operating the DC-DC converter in a buck mode; and adjusting and extending the duty cycle of the low-voltage-side switches to overlap a turn-off time of the high-voltage-side switches to reduce the conduction loss of the low-voltage-side switches.
摘要翻译：一种用于双向DC-DC转换器的控制方法，包括：操作具有包括多个低压侧开关的低电压侧的双向DC-DC转换器，钳位开关和钳位电容器以及包括多个升压模式的高电压侧开关; 在开启所有低压侧开关之前，以预定的占空比切换电压钳位开关; 调整钳位开关的预定占空比小于低压侧开关的截止间隔，以降低低压侧开关和钳位开关的导通损耗; 或者，以降压模式操作DC-DC转换器; 并且调节和延长低压侧开关的占空比以与高压侧开关的截止时间重叠，以降低低压侧开关的导通损耗。

8. 发明申请

US20060094254A1 Method for forming field oxide 有权
标题翻译：形成场氧化物的方法
公开(公告)号：US20060094254A1
公开(公告)日：2006-05-04
申请号：US11204479
申请日：2005-08-15
申请人： Yi Fu Chung , Shih-Chi Lai , Jen Chieh Chang
发明人： Yi Fu Chung , Shih-Chi Lai , Jen Chieh Chang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76213
摘要： A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substrate in a region not covered with the barrier layer by introducing pure dry oxygen, and performing a wet oxidation process to form a second field oxide adjacent the first field oxide by introducing hydrogen and oxygen. The method of the present invention can improve the quality and electrical property of the semiconductor device, increase the yield, and reduce the cost.
摘要翻译：公开了一种形成场氧化物的方法。在一个实施例中，该方法包括提供具有衬底，衬垫氧化物和图案化阻挡层的半导体结构，进行干氧化处理以在未被阻挡层覆盖的区域中的衬底上形成第一场氧化物，通过引入纯干氧，并进行湿氧化处理，以通过引入氢和氧形成与第一场氧化物相邻的第二场氧化物。本发明的方法可以提高半导体器件的质量和电气性能，提高产量，降低成本。

9. 发明申请

US20050287734A1 Method for fabricating trench power device 有权
标题翻译：沟槽功率器件的制造方法
公开(公告)号：US20050287734A1
公开(公告)日：2005-12-29
申请号：US10962350
申请日：2004-10-08
申请人： Jen-Chieh Chang , Yi-Fu Chung , Tun-Fu Hung
发明人： Jen-Chieh Chang , Yi-Fu Chung , Tun-Fu Hung
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/06 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/42368
摘要： Embodiments of the invention relate to a fabrication method of an electronic device, more particularly to a fabrication method of a power device in which an oxide layer at the bottom of the trench is provided to reduce Miller capacitance and further reduce RC delay. In one embodiment, a method for forming an oxide layer at the bottom of a trench comprises providing a first substrate with at least one trench therein; forming a first oxide layer on the bottom and sidewalls of the trench; removing the first oxide layer at the bottom of the trench; and forming a second oxide layer at the bottom of the trench.
摘要翻译：本发明的实施例涉及一种电子设备的制造方法，更具体地说，涉及一种功率器件的制造方法，其中提供了沟槽底部的氧化物层以减小米勒电容并进一步降低RC延迟。在一个实施例中，在沟槽的底部形成氧化物层的方法包括提供第一衬底中的至少一个沟槽; 在沟槽的底部和侧壁上形成第一氧化物层; 去除沟槽底部的第一氧化物层; 以及在所述沟槽的底部形成第二氧化物层。

10. 发明申请

US20050266641A1 Method of forming films in a trench 审中-公开
标题翻译：在沟槽中形成膜的方法
公开(公告)号：US20050266641A1
公开(公告)日：2005-12-01
申请号：US10961575
申请日：2004-10-08
申请人： Shih-Chi Lai , Tun-Fu Hung , Yi-Fu Chung , Jen-Chieh Chang
发明人： Shih-Chi Lai , Tun-Fu Hung , Yi-Fu Chung , Jen-Chieh Chang
IPC分类号： H01L21/306 , H01L21/3105 , H01L21/316 , H01L21/318 , H01L21/336 , H01L29/51
CPC分类号： H01L29/513 , H01L21/31053 , H01L21/31662 , H01L21/3185 , H01L29/66734
摘要： A method of forming films in a trench is applied to the manufacturing process of a power MOS device. In one embodiment, the method comprises providing a semiconductor substrate, forming a trench in the semiconductor substrate, forming a first dielectric layer on sidewalls of the trench, forming a second dielectric layer on the first dielectric layer, and forming a polysilicon layer in the trench. The method of forming films in a trench of the present invention can reduce or eliminate the thermal stress resulting from the different thermal expansion coefficients of different material layers after high temperature process.
摘要翻译：在沟槽中形成膜的方法被应用于功率MOS器件的制造过程。在一个实施例中，该方法包括提供半导体衬底，在半导体衬底中形成沟槽，在沟槽的侧壁上形成第一电介质层，在第一电介质层上形成第二电介质层，以及在沟槽中形成多晶硅层。在本发明的沟槽中形成膜的方法可以降低或消除由高温处理后的不同材料层的不同热膨胀系数产生的热应力。

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