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1. 发明申请

US20130102120A1 METHODS OF MANUFACTURING PHASE-CHANGE MEMORY DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造相变存储器件和半导体器件的方法
公开(公告)号：US20130102120A1
公开(公告)日：2013-04-25
申请号：US13339891
申请日：2011-12-29
申请人： Hye Jin Seo , Keum Bum Lee
发明人： Hye Jin Seo , Keum Bum Lee
IPC分类号： H01L21/62
CPC分类号： H01L45/06 , H01L27/2409 , H01L45/126 , H01L45/1608 , H01L45/1683
摘要： Methods of manufacturing a phase-change memory device and a semiconductor device are provided. The method of manufacturing the phase-change memory device includes forming a switching device layer, an ohmic contact layer, and a hard mask layer on a semiconductor substrate, patterning the hard mask layer to form a hard mask pattern, etching the ohmic layer and the switching layer using the hard mask pattern to form a pattern structure including an ohmic contact pattern, a switching device pattern, and the hard mask pattern, selectively oxidizing a surface of the pattern structure, forming an insulating layer to bury the pattern structure, and selectively removing the hard mask pattern other than the oxidized surface thereof to form a contact hole.
摘要翻译：提供了制造相变存储器件和半导体器件的方法。制造相变存储器件的方法包括在半导体衬底上形成开关器件层，欧姆接触层和硬掩模层，图案化硬掩模层以形成硬掩模图案，蚀刻欧姆层和使用硬掩模图案形成包括欧姆接触图案，开关器件图案和硬掩模图案的图案结构的切换层，选择性地氧化图案结构的表面，形成绝缘层以埋藏图案结构，并且选择性地除去其氧化表面以外的硬掩模图案以形成接触孔。

2. 发明授权

US07893421B2 Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristic 有权
标题翻译：相变存储器件能够满足复位电流特性和接触电阻特性
公开(公告)号：US07893421B2
公开(公告)日：2011-02-22
申请号：US12482607
申请日：2009-06-11
申请人： Keum Bum Lee , Hye Jin Seo , Hyung Suk Lee
发明人： Keum Bum Lee , Hye Jin Seo , Hyung Suk Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , H01L27/2409 , H01L45/06 , H01L45/126 , H01L45/16
摘要： A phase change memory device is presented that has a lower electrode contact that has a gradient resistance profile ranging from a lower resistive lower end to a higher resistive upper end. The phase change memory device includes a semiconductor substrate, a lower electrode contact, and a phase change pattern. The semiconductor substrate has a switching device. The lower electrode contact is formed on the switching device and has a specific resistance which gradually increases from a lower part to an upper part of the lower electrode contact. The phase change pattern layer is formed on the lower electrode contact.
摘要翻译：提出了一种相变存储器件，其具有下电极接触，其具有从下电阻下端到较高电阻上端的梯度电阻分布。相变存储器件包括半导体衬底，下电极接触和相变图案。半导体衬底具有开关器件。下部电极接触形成在开关器件上，并且具有从下部电极接触件的下部向上部逐渐增加的电阻率。相变图案层形成在下电极触点上。

3. 发明申请

US20090111255A1 METHOD FOR FABRICATING TRANSISTOR IN SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件中制作晶体管的方法
公开(公告)号：US20090111255A1
公开(公告)日：2009-04-30
申请号：US12259799
申请日：2008-10-28
申请人： Yong Seok Eun , Su Ho Kim , An Bae Lee , Hye Jin Seo
发明人： Yong Seok Eun , Su Ho Kim , An Bae Lee , Hye Jin Seo
IPC分类号： H01L21/4763
CPC分类号： H01L29/66545 , H01L27/10876
摘要： Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer for covering the etch stop layer pattern; forming a recess trench that exposes an upper surface of the etch stop layer pattern by etching the semiconductor layer pattern; removing the etch stop layer pattern exposed in the recess trench; and forming a gate that fills the recess trench.
摘要翻译：提供了一种在半导体器件中制造晶体管的方法。该方法包括在半导体衬底上形成蚀刻停止层图案; 形成用于覆盖蚀刻停止层图案的半导体层; 形成通过蚀刻所述半导体层图案来暴露所述蚀刻停止层图案的上表面的凹槽; 去除在凹槽中暴露的蚀刻停止层图案; 并形成填充凹槽的栅极。

4. 发明授权

US08609503B2 Phase change memory device and fabrication method thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US08609503B2
公开(公告)日：2013-12-17
申请号：US13357882
申请日：2012-01-25
申请人： Keum Bum Lee , Su Jin Chae , Hye Jin Seo
发明人： Keum Bum Lee , Su Jin Chae , Hye Jin Seo
IPC分类号： H01L21/8239
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： The manufacturing of a phase change memory device that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact. The formed bottom electrode contact exposes a switching device on a semiconductor substrate which the switching device is formed in, forming an insulating layer on a resultant structure of the semiconductor substrate including the bottom electrode contact by using an insulating compound having materials with different atomic sizes, and forming an insulating spacer within the bottom electrode contact hole by selectively etching the insulating layer.
摘要翻译：一种相变存储器件的制造，其包括开关器件，与开关器件接触的底部电极触点和形成在底部电极触点上的多孔间隔物。形成的底部电极接触使形成有开关器件的半导体衬底上的开关器件暴露，通过使用具有不同原子尺寸的材料的绝缘化合物，在包括底部电极接触的半导体衬底的合成结构上形成绝缘层，以及通过选择性地蚀刻绝缘层，在底部电极接触孔内形成绝缘间隔物。

5. 发明申请

US20120156851A1 PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20120156851A1
公开(公告)日：2012-06-21
申请号：US13357882
申请日：2012-01-25
申请人： Keum Bum LEE , Su Jin CHAE , Hye Jin SEO
发明人： Keum Bum LEE , Su Jin CHAE , Hye Jin SEO
IPC分类号： H01L21/8239
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device is provided that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact.
摘要翻译：提供了一种相变存储装置，其包括开关装置，与开关装置接触的底部电极触点和形成在底部电极触点上的多孔间隔件。

6. 发明申请

US20100197111A1 METHOD OF MANUFACTURING MEMORY DEVICE AND METHOD OF MANUFACTURING PHASE-CHANGE MEMORY DEVICE USING THE SAME 审中-公开
标题翻译：制造存储器件的方法和使用该存储器件制造相变存储器件的方法
公开(公告)号：US20100197111A1
公开(公告)日：2010-08-05
申请号：US12623508
申请日：2009-11-23
申请人： Hye Jin SEO , Keum Bum LEE , Hyung Suk LEE
发明人： Hye Jin SEO , Keum Bum LEE , Hyung Suk LEE
IPC分类号： H01L21/77 , H01L21/22 , H01L21/20
CPC分类号： H01L45/1233 , H01L27/2409 , H01L45/06 , H01L45/126 , H01L45/16
摘要： A method of manufacturing a memory device and a phase-change memory device is presented. The method of manufacturing the memory device includes performing Ge ion implantation on a top surface of a first layer. The method also includes performing a fast heat treatment on the ion-implanted first layer. The method also includes forming a second layer on a top of the fast heat-treated first layer.
摘要翻译：提出了一种制造存储器件和相变存储器件的方法。制造存储器件的方法包括在第一层的顶表面上执行Ge离子注入。该方法还包括对离子注入的第一层进行快速热处理。该方法还包括在快速热处理的第一层的顶部上形成第二层。

7. 发明申请

US20080081430A1 Method For Fabricating Capacitor In Semiconductor Device 失效
标题翻译：半导体器件制造电容器的方法
公开(公告)号：US20080081430A1
公开(公告)日：2008-04-03
申请号：US11758507
申请日：2007-06-05
申请人： Cheol Hwan Park , Dong-Su Park , Eun A. Lee , Hye Jin Seo
发明人： Cheol Hwan Park , Dong-Su Park , Eun A. Lee , Hye Jin Seo
IPC分类号： H01L21/24
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.
摘要翻译：公开了一种在半导体器件中形成电容器的方法。该方法包括在半导体衬底上形成存储节点电极，在存储节点电极上形成具有高介电常数的电介质层，在电介质层上沉积平板电极，从而形成副产物杂质，除去副产物杂质通过在半导体衬底上引入含氢（H）原子的气体，同时在平板电极上沉积覆盖层而残留在平板电极上。

8. 发明申请

US20080003751A1 Methods for forming dual poly gate of semiconductor device 审中-公开
标题翻译：用于形成半导体器件双重多晶硅栅极的方法
公开(公告)号：US20080003751A1
公开(公告)日：2008-01-03
申请号：US11646730
申请日：2006-12-28
申请人： Cheol Hwan Park , Dong Su Park , Eun A. Lee , Hye Jin Seo
发明人： Cheol Hwan Park , Dong Su Park , Eun A. Lee , Hye Jin Seo
IPC分类号： H01L21/336
CPC分类号： H01L21/82345 , H01L21/28044 , H01L21/324 , H01L21/823842
摘要： A method for forming a dual poly gate of a semiconductor device includes forming a gate insulating layer on a semiconductor substrate having a first region and a second region; forming an amorphous silicon layer, in which a portion defined by the first region is implanted with impurity ions of a first conductivity type and a portion defined by the second region is implanted with impurity ions of a second conductivity type, on the gate insulating layer; forming silicon seeds on the amorphous silicon layer; forming hemispherical grains on the surface of the amorphous silicon layer using the silicon seeds; and activating the implanted impurity ions and crystallizing the amorphous silicon layer having the hemispherical grains formed thereon by annealing to form a polysilicon layer of a first conductivity type and a polysilicon layer of a second conductivity type in the portions of the amorphous silicon layer defined by the first and second regions, respectively.
摘要翻译：一种用于形成半导体器件的双多晶硅栅极的方法包括在具有第一区域和第二区域的半导体衬底上形成栅极绝缘层; 形成非晶硅层，其中由栅极绝缘层注入由第一导电类型的杂质离子和由第二区限定的部分，由第一区限定的部分注入第二导电类型的杂质离子; 在所述非晶硅层上形成硅晶种; 使用硅晶粒在非晶硅层的表面上形成半球状晶粒; 并激活注入的杂质离子并使其上形成有半球形晶粒的非晶硅层通过退火结晶，以在由非晶硅层限定的部分中形成第一导电类型的多晶硅层和第二导电类型的多晶硅层第一和第二区域。

9. 发明申请

US20070052891A1 Display panel 审中-公开
标题翻译：显示面板
公开(公告)号：US20070052891A1
公开(公告)日：2007-03-08
申请号：US11517875
申请日：2006-09-08
申请人： Sang-Woo Kim , Won-Sang Park , Jae-Young Lee , Hae-Young Yun , Jae-Ik Lim , Young-Joo Chang , Seung-Kyu Lee , Chang-Woo Shim , Yong-Suk Yeo , Sung-Eun Cha , Ji-Youn Choi , Hye-Jin Seo , Joo-Hee Oh
发明人： Sang-Woo Kim , Won-Sang Park , Jae-Young Lee , Hae-Young Yun , Jae-Ik Lim , Young-Joo Chang , Seung-Kyu Lee , Chang-Woo Shim , Yong-Suk Yeo , Sung-Eun Cha , Ji-Youn Choi , Hye-Jin Seo , Joo-Hee Oh
IPC分类号： G02F1/1335
CPC分类号： G02F1/133634 , G02F1/1393 , G02F2001/133638 , G02F2413/13
摘要： A panel includes a first substrate, a second substrate facing the first substrate and first and second polarizers disposed on the outer surfaces of the first and the second substrates, respectively. The first and second polarizers include biaxial n-TAC as a supporter.
摘要翻译：面板包括第一基板，面对第一基板的第二基板和分别设置在第一和第二基板的外表面上的第一和第二偏振器。第一和第二偏振器包括双轴n-TAC作为支持者。

10. 发明申请

US20110073826A1 PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20110073826A1
公开(公告)日：2011-03-31
申请号：US12648389
申请日：2009-12-29
申请人： Keum Bum LEE , Su Jin CHAE , Hye Jin SEO
发明人： Keum Bum LEE , Su Jin CHAE , Hye Jin SEO
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device is provided that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact.
摘要翻译：提供了一种相变存储装置，其包括开关装置，与开关装置接触的底部电极触点和形成在底部电极触点上的多孔间隔件。

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