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1. 发明授权

US09385304B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US09385304B2
公开(公告)日：2016-07-05
申请号：US14203249
申请日：2014-03-10
申请人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Hiroaki Yoda , Hyung Suk Lee , Jae Geun Oh , Choon Kun Ryu , Min Suk Lee
发明人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Hiroaki Yoda , Hyung Suk Lee , Jae Geun Oh , Choon Kun Ryu , Min Suk Lee
IPC分类号： H01L27/00 , H01L43/02 , H01L43/12 , H01L45/00 , G11C11/56 , G11C11/15 , G11C11/16 , H01L27/22 , H01L27/24 , H01L43/08 , H01L43/10
CPC分类号： H01L43/02 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , H01L27/222 , H01L27/228 , H01L27/2463 , H01L43/08 , H01L43/10 , H01L43/12 , H01L45/04
摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.
摘要翻译：根据一个实施例，公开了一种磁存储器。该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

2. 发明授权

US09123879B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09123879B2
公开(公告)日：2015-09-01
申请号：US14202802
申请日：2014-03-10
申请人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
发明人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
IPC分类号： H01L27/00 , H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层，隧道势垒层，存储层。存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

3. 发明申请

US20150069557A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20150069557A1
公开(公告)日：2015-03-12
申请号：US14202802
申请日：2014-03-10
申请人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
发明人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层，隧道势垒层，存储层。存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

4. 发明申请

US20090321705A1 PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090321705A1
公开(公告)日：2009-12-31
申请号：US12256385
申请日：2008-10-22
申请人： Min Yong Lee , Su Jin Chae , Keum Bum Lee , Dong Ryeol Lee , Hyung Suk Lee
发明人： Min Yong Lee , Su Jin Chae , Keum Bum Lee , Dong Ryeol Lee , Hyung Suk Lee
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/06 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device includes a semiconductor substrate, a first conductive pattern formed on the semiconductor substrate, a second conductive pattern contacting an upper surface of the first conductive pattern and having a diameter less than a diameter of the first conductive pattern, and a phase change material layer contacting the second conductive pattern.
摘要翻译：相变存储器件包括半导体衬底，形成在半导体衬底上的第一导电图案，与第一导电图案的上表面接触并具有小于第一导电图案的直径的直径的第二导电图案，以及相位改变与第二导电图案接触的材料层。

5. 发明申请

US20130171798A1 METHOD OF MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE 审中-公开
标题翻译：制造相变随机访问存储器件的方法
公开(公告)号：US20130171798A1
公开(公告)日：2013-07-04
申请号：US13482190
申请日：2012-05-29
申请人： Seung Beom BAEK , Hyung Suk Lee
发明人： Seung Beom BAEK , Hyung Suk Lee
IPC分类号： H01L21/02
CPC分类号： H01L45/06 , H01L45/126 , H01L45/1608
摘要： A method of manufacturing a phase-change random access memory device. The method includes forming a word line on a semiconductor substrate, forming a switching element material and a hard mask material on the word line, etching the switching element material and the hard mask material to form a hole exposing the word line, forming an insulating material on a sidewall and a bottom of the hole, removing the hard mask material; and forming a heater material on the switching element material. The hard mask material has different etch selectivity from the insulating material.
摘要翻译：一种制造相变随机存取存储器件的方法。该方法包括在半导体衬底上形成字线，在字线上形成开关元件材料和硬掩模材料，蚀刻开关元件材料和硬掩模材料以形成暴露字线的孔，形成绝缘材料在孔的侧壁和底部上，去除硬掩模材料; 以及在所述开关元件材料上形成加热材料。硬掩模材料与绝缘材料具有不同的蚀刻选择性。

6. 发明申请

US20110125397A1 Navigation method and apparatus for mobile terminal 有权
标题翻译：移动终端的导航方法和装置
公开(公告)号：US20110125397A1
公开(公告)日：2011-05-26
申请号：US12927042
申请日：2010-11-05
申请人： Hyung Suk Lee
发明人： Hyung Suk Lee
IPC分类号： G01C21/00
CPC分类号： G01C21/365
摘要： A navigation method, apparatus, and a computer readable medium for a mobile terminal support a display mode that provides a good field of view and enhanced readability. An input signal for enabling a route guidance function is received. Map data for route guidance is outputted when the route guidance function is enabled. Whether to activate a heads-up display (HUD) mode is determined. When the HUD mode is activated, only preset guidance information items that are extracted from the map data are displayed. Hence, the driver does not have to look away from the road to view the map on the screen, significantly reducing the risk of traffic accidents. Simplified route guidance information is provided to solve poor map readability due to screen size limitations of a mobile terminal.
摘要翻译：用于移动终端的导航方法，装置和计算机可读介质支持提供良好视野和增强的可读性的显示模式。接收用于启用路线引导功能的输入信号。当路径引导功能有效时，输出路线引导的地图数据。确定是否激活平视显示（HUD）模式。当HUD模式被激活时，仅显示从地图数据提取的预设引导信息项。因此，驾驶员不必远离道路，在屏幕上观看地图，大大降低了交通事故的风险。提供简化的路线指导信息来解决由于移动终端的屏幕尺寸限制引起的差的地图可读性。

7. 发明申请

US20100197111A1 METHOD OF MANUFACTURING MEMORY DEVICE AND METHOD OF MANUFACTURING PHASE-CHANGE MEMORY DEVICE USING THE SAME 审中-公开
标题翻译：制造存储器件的方法和使用该存储器件制造相变存储器件的方法
公开(公告)号：US20100197111A1
公开(公告)日：2010-08-05
申请号：US12623508
申请日：2009-11-23
申请人： Hye Jin SEO , Keum Bum LEE , Hyung Suk LEE
发明人： Hye Jin SEO , Keum Bum LEE , Hyung Suk LEE
IPC分类号： H01L21/77 , H01L21/22 , H01L21/20
CPC分类号： H01L45/1233 , H01L27/2409 , H01L45/06 , H01L45/126 , H01L45/16
摘要： A method of manufacturing a memory device and a phase-change memory device is presented. The method of manufacturing the memory device includes performing Ge ion implantation on a top surface of a first layer. The method also includes performing a fast heat treatment on the ion-implanted first layer. The method also includes forming a second layer on a top of the fast heat-treated first layer.
摘要翻译：提出了一种制造存储器件和相变存储器件的方法。制造存储器件的方法包括在第一层的顶表面上执行Ge离子注入。该方法还包括对离子注入的第一层进行快速热处理。该方法还包括在快速热处理的第一层的顶部上形成第二层。

8. 发明申请

US20090009599A1 Intelligent surveillance system and method of controlling the same 审中-公开
标题翻译：智能监控系统及其控制方法
公开(公告)号：US20090009599A1
公开(公告)日：2009-01-08
申请号：US12075410
申请日：2008-03-11
申请人： Hyung-suk Lee
发明人： Hyung-suk Lee
IPC分类号： H04N7/18 , G06K9/00
CPC分类号： H04N7/188 , G08B13/19608 , G08B31/00
摘要： An intelligent surveillance system and a method of controlling the same. The intelligent surveillance system and method monitor a specific surveillance region. When detecting a specific object in the surveillance region during surveillance, the intelligent surveillance system and method determine the risk of the detected object and automatically changes a tracking object based on the determined result. The intelligent surveillance system includes a surveillance unit installed in a specific region for monitoring at least a portion of the specific region as a surveillance region and detecting a plurality of moving objects in the surveillance region, a control unit for determining the risk of each of the moving objects detected by the surveillance unit and selecting at least one of the moving objects as tracking objects on the basis of the risk, and a tracking unit for tracking the tracking object.
摘要翻译：智能监控系统及其控制方法。智能监控系统和方法监控一个特定的监控区域。在监视期间检测监视区域中的特定物体时，智能监控系统和方法根据确定的结果确定检测对象的风险并自动更改跟踪对象。所述智能监视系统包括安装在特定区域中的监视单元，用于将所述特定区域的至少一部分作为监视区域进行监视，并且检测所述监视区域中的多个移动物体;控制单元，由监视单元检测到的移动物体，并且基于风险选择运动物体中的至少一个作为跟踪对象，以及跟踪单元，用于跟踪跟踪对象。

9. 发明申请

US20150325785A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20150325785A1
公开(公告)日：2015-11-12
申请号：US14807267
申请日：2015-07-23
申请人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
发明人： Masahiko NAKAYAMA , Masatoshi YOSHIKAWA , Tadashi KAI , Yutaka HASHIMOTO , Masaru TOKO , Hiroaki YODA , Jae Geun OH , Keum Bum LEE , Choon Kun RYU , Hyung Suk LEE , Sook Joo KIM
IPC分类号： H01L43/12 , H01L43/10 , H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

10. 发明申请

US20100117044A1 PHASE CHANGE MEMORY DEVICE CAPABLE OF SATISFYING RESET CURRENT CHARACTERISTIC AND CONTACT RESISTANCE CHARACTERISTIC 有权
标题翻译：相位变化记忆装置可以满足复位电流特性和接触电阻特性
公开(公告)号：US20100117044A1
公开(公告)日：2010-05-13
申请号：US12482607
申请日：2009-06-11
申请人： Keum Bum LEE , Hye Jin SEO , Hyung Suk LEE
发明人： Keum Bum LEE , Hye Jin SEO , Hyung Suk LEE
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/144 , H01L27/2409 , H01L45/06 , H01L45/126 , H01L45/16
摘要： A phase change memory device is presented that has a lower electrode contact that has a gradient resistance profile ranging from a lower resistive lower end to a higher resistive upper end. The phase change memory device includes a semiconductor substrate, a lower electrode contact, and a phase change pattern. The semiconductor substrate has a switching device. The lower electrode contact is formed on the switching device and has a specific resistance which gradually increases from a lower part to an upper part of the lower electrode contact. The phase change pattern layer is formed on the lower electrode contact.
摘要翻译：提出了一种相变存储器件，其具有下电极接触，其具有从下电阻下端到较高电阻上端的梯度电阻分布。相变存储器件包括半导体衬底，下电极接触和相变图案。半导体衬底具有开关器件。下部电极接触形成在开关器件上，并且具有从下部电极接触件的下部向上部逐渐增加的电阻率。相变图案层形成在下电极触点上。

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