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    • 2. 发明授权
    • Radiation source for generating extreme ultraviolet radiation
    • 用于产生极紫外线辐射的辐射源
    • US06882704B2
    • 2005-04-19
    • US10697579
    • 2003-10-30
    • Guido SchrieverKai GaebelUwe Stamm
    • Guido SchrieverKai GaebelUwe Stamm
    • G21K5/04H05G2/00H05H35/00
    • H05G2/003
    • The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation, particularly for photolithography exposure processes. The object of the invention is to find a novel possibility for realizing radiation sources for generating extreme ultraviolet (EUV) radiation which permits a uniform basic construction for ensuring beam characteristics that are reproducible over the long term and in which the source is conceived so as to be flexible with respect to specific applications. This object is met according to the invention in that any plasma generation unit is provided for introducing high energy input supplied in a pulsed manner in a vacuum chamber, and the radiation generated from the plasma is monitored by an energy monitor unit which measures the pulse energy of the emitted radiation and by a radiation diagnosis unit which detects the radiation characteristics to obtain result data for influencing the excitation conditions for the plasma and to influence the parameters of the plasma generation in an application-specific manner by means of the main control unit.
    • 本发明涉及用于产生极紫外(EUV)辐射的辐射源,特别是用于光刻曝光工艺。 本发明的目的是找到一种实现用于产生极紫外(EUV)辐射的辐射源的新型可能性,该辐射源允许均匀的基本结构,以确保长期可再现的光束特性,并且其中构想源,以便 对具体应用灵活。 根据本发明满足本发明的目的在于提供任何等离子体产生单元,用于将以脉冲方式提供的高能量输入引入真空室,并且由等离子体产生的辐射由能量监测单元监测,该能量监测单元测量脉冲能量 以及辐射诊断单元,该辐射诊断单元检测辐射特性以获得用于影响等离子体的激发条件的结果数据,并通过主控制单元以应用特定的方式影响等离子体产生的参数。
    • 3. 发明授权
    • Radiation source with high average EUV radiation output
    • 具有高平均EUV辐射输出的辐射源
    • US06815900B2
    • 2004-11-09
    • US10741882
    • 2003-12-19
    • Imtiaz AhmadJuergen KleinschmidtGuido SchrieverUwe StammSven Goetze
    • Imtiaz AhmadJuergen KleinschmidtGuido SchrieverUwe StammSven Goetze
    • H05H100
    • H05G2/003
    • The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation based on a hot, dense plasma generated by gas discharge. The object of the invention, to find a novel possibility for the realization of an EUV radiation source which achieves a high average radiation output in the EUV region and sufficiently long life and long-term stability, is met according to the invention in that a first electrode housing and a second electrode housing which are electrically separated from one another so as to be resistant to breakdown form parts of a vacuum chamber for a gas discharge for plasma generation, and the second electrode housing has an electrode collar which is enclosed concentrically by the first electrode housing so that the gas discharge is oriented substantially only parallel to the axis of symmetry of the electrode housings, and the electrode collar is stepped radially relative to the concentric insulator layer in such a way that at least one end region of the electrode collar is at a distance from the concentric insulator layer such that a concentric gap is formed. A substantially longer operating duration is achieved by the optimized electrode geometry in conjunction with material selection and effective heat dissipation.
    • 本发明涉及一种用于基于由气体放电产生的热的致密等离子体产生极紫外(EUV)辐射的辐射源。 本发明的目的是为了发现实现EUV辐射源的新型可能性,其实现了EUV区域中的高平均辐射输出并且具有足够长的寿命和长期稳定性,根据本发明,满足第一 电极壳体和第二电极壳体,其彼此电分离,以便抵抗用于等离子体产生的气体放电的真空室的部件的分解,并且第二电极壳体具有电极套环,该电极套筒同心地包围 第一电极壳体,使得气体放电基本上仅平行于电极壳体的对称轴线定向,并且电极套环相对于同心绝缘体层级径向地延伸,使得电极套环的至少一个端部区域 距离同心绝缘体层一定距离,从而形成同心间隙。 通过优化的电极几何结构与材料选择和有效散热来实现更长的操作持续时间。
    • 4. 发明授权
    • Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays
    • 用于产生高输出功率气体放电源的极紫外辐射和/或软X射线的方法和装置
    • US06804327B2
    • 2004-10-12
    • US10109581
    • 2002-03-27
    • Guido SchrieverUlrich Rebhan
    • Guido SchrieverUlrich Rebhan
    • G21G400
    • H05G2/003B03C3/383B82Y10/00G03F7/70033G03F7/70175G03F7/70916
    • The method and system herein pertain to an EUV photon source which includes a plasma chamber filled with a gas mixture, multiple electrodes within the plasma chamber defining a plasma region and a central axis, a power supply circuit connected to the electrodes for delivering a main pulse to the electrodes for energizing the plasma around the central axis to produce an EUV beam. The system can also include a preionizer for ionizing the gas mixture in preparing to form a dense plasma around the central axis upon application of the main pulse from the power supply circuit to the electrodes. A set of baffles may be disposed along the beam path outside of the pinch region to diffuse gaseous and contaminant particulate flow emanating from the pinch region and to absorb or reflect acoustic waves emanating from the pinch region away from the pinch region.
    • 本文的方法和系统涉及EUV光子源,其包括填充有气体混合物的等离子体室,等离子体室内的多个电极限定等离子体区域和中心轴线,连接到电极的电源电路,用于传送主脉冲 到用于激励中心轴周围的等离子体的电极以产生EUV波束。 该系统还可以包括用于电离气体混合物的前置离子器,用于在将电脉冲从电源电路施加到电极上时在中心轴周围形成致密等离子体。 可以沿着夹紧区域外的光束路径布置一组挡板以扩散从夹持区域发出的气体和污染物颗粒流,并吸收或反射从夹紧区域远离夹点区域发出的声波。
    • 5. 发明授权
    • Method and device for producing extreme ultraviolet and soft X-rays from a gaseous discharge
    • 用于从气体放电产生极紫外和软X射线的方法和装置
    • US06389106B1
    • 2002-05-14
    • US09555819
    • 2000-07-28
    • Willi NeffRainer LebertGuido SchrieverKlaus Bergmann
    • Willi NeffRainer LebertGuido SchrieverKlaus Bergmann
    • H01J3500
    • H05G2/003G03F7/70033H05H1/48
    • A method and a device for generating extreme ultraviolet (EUV) and soft x-ray radiation from a gas discharge. The device has at least two electrodes each having a flush opening by which an axis of symmetry is defined, in which an intermediate space with a wide spatial homogenous gas filling between anode and cathode is provided. The electrodes are formed in such a way, that the gas discharge is formed exclusively in the volume defined by the flush openings. The current pulses with respect to amplitude and period duration are selected in such a way that a dense hot plasma channel is formed on the axis of symmetry, the plasma being the source of EUV and/or soft x-ray radiation. The preferred area of application is the EUV projection lithography in the spectral range around 13 nm.
    • 一种用于从气体放电产生极紫外(EUV)和软X射线辐射的方法和装置。 该装置具有至少两个电极,每个电极具有齐平的开口,通过该开口限定对称轴,其中提供了在阳极和阴极之间填充宽空间均匀气体的中间空间。 电极以这样的方式形成,即气体排出仅在由冲洗开口限定的体积中形成。 选择相对于振幅和周期持续时间的电流脉冲,使得在对称轴上形成致密的热等离子体通道,等离子体是EUV和/或软X射线辐射源。 优选的应用领域是在约13nm的光谱范围内的EUV投影光刻。
    • 10. 发明授权
    • Method and arrangement for cleaning optical surfaces in plasma-based radiation sources
    • 用于清洁基于等离子体的辐射源中的光学表面的方法和装置
    • US08147647B2
    • 2012-04-03
    • US12128784
    • 2008-05-29
    • Guido Schriever
    • Guido Schriever
    • C23F1/00H01L21/306C25F5/00
    • G03F7/70933B08B5/00G03F7/70175G03F7/70483G03F7/70925G03F7/70983H05H1/2406H05H2001/245H05H2245/123
    • The invention is directed to a method and an arrangement for cleaning optical surfaces of reflection optics which are arranged in a plasma-based radiation source or exposure device arranged downstream and contaminated by debris particles emitted by a hot plasma of the radiation source. It is the object of the invention to find a novel possibility for in-situ cleaning of the optical surfaces of reflection optics which are contaminated by debris in plasma-based radiation sources so as to allow an integrated generation of known gas radicals and the isotropic distribution thereof on the contaminated optical surfaces. According to the invention, this object is met in that the gas radicals are generated by dielectrically impeded discharge between two surface electrodes along the entire optical surface. The gas radicals are generated almost exclusively by electron transfer on at least one barrier layer which covers the entire surface of at least one of the surface electrodes, an AC voltage in the Hz to kHz range is applied to the surface electrodes for periodically eliminating the charge polarization at the barrier layer so that a cold plasma is generated continuously and the deposited debris particles are removed as gaseous reaction products by the gas flow guided over the optical surface.
    • 本发明涉及一种用于清洁反射光学器件的光学表面的方法和装置,其布置在布置在下游的等离子体辐射源或曝光装置中,并被辐射源的热等离子体发射的碎屑颗粒污染。 本发明的目的是找到一种新颖的可能性,用于原位清洁由等离子体辐射源中的碎屑污染的反射光学器件的光学表面,从而允许集成产生已知​​气体基团和各向同性分布 在污染的光学表面上。 根据本发明,满足这个目的在于,通过沿着整个光学表面的两个表面电极之间的介电阻碍的放电产生气体自由基。 气体自由基几乎完全通过覆盖至少一个表面电极的整个表面的至少一个阻挡层上的电子转移而产生,将Hz至kHz范围内的AC电压施加到表面电极以周期性地消除电荷 在阻挡层处的极化,使得连续地产生冷等离子体,并且通过在光学表面上引导的气流,作为气体反应产物除去沉积的碎屑颗粒。