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1. 发明申请

US20110193940A1 3D CMOS Image Sensors, Sensor Systems Including the Same 有权
标题翻译： 3D CMOS图像传感器，包括它的传感器系统
公开(公告)号：US20110193940A1
公开(公告)日：2011-08-11
申请号：US12984972
申请日：2011-01-05
申请人： Young-soo Park , Won-joo Kim , Kyoo-chul Cho , Gi-jung Kim , Sam-jong Choi
发明人： Young-soo Park , Won-joo Kim , Kyoo-chul Cho , Gi-jung Kim , Sam-jong Choi
IPC分类号： H04N13/02 , H01L27/146
CPC分类号： H01L27/14629 , H01L27/14687
摘要： A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.
摘要翻译：一种三维（3D）CMOS图像传感器（CIS），其足以吸收入射的红外线（IR）并且包括形成在薄的外延膜中的红外线（IR）接收单元，由此容易地使用传统的CIS工艺包括3D CIS的传感器系统和制造3D CIS的方法，3D CIS包括通过重复反射吸收入射到其中的IR的IR接收部分以产生电子 - 空穴对（EHP）; 以及形成在IR接收部上并且收集通过施加预定电压而产生的电子的电极部分。

2. 发明授权

US06919214B2 Apparatus for analyzing a substrate employing a copper decoration 失效
标题翻译：用于分析使用铜装饰的基板的装置
公开(公告)号：US06919214B2
公开(公告)日：2005-07-19
申请号：US10688954
申请日：2003-10-21
申请人： Gi-Jung Kim , Kyoo-Chul Cho , Tae-Yeol Heo , Sook-Hyun Park
发明人： Gi-Jung Kim , Kyoo-Chul Cho , Tae-Yeol Heo , Sook-Hyun Park
IPC分类号： G01N33/00 , H01L21/66 , H01L21/00
CPC分类号： H01L22/24 , G01N2033/0095
摘要： An apparatus for analyzing a substrate employing a copper decoration includes a bath having at least two receiving containers for receiving electrolytes, slots formed at insides of the receiving containers for receiving substrates to be analyzed in a direction that is normal to a bottom face of the bath, lower copper plates provided in the receiving containers, the lower copper plates making contact with entire rear faces of the substrates received in the receiving containers, upper copper plates provided in the receiving containers, each of the upper copper plates corresponding to a respective one of the lower copper plates, and separated from front faces of the substrates, and a power source connected to the upper copper plates and the lower copper plates for providing voltages to the same. A plurality of substrates may be simultaneously analyzed using one apparatus thereby greatly reducing an amount of time required for the analysis.
摘要翻译：用于分析使用铜装饰的基板的装置包括具有至少两个用于接收电解质的接收容器的浴槽，在接收容器的内侧形成的槽，用于接收正常于浴底面的方向分析的基板设置在接收容器中的下铜板，与接收容器中容纳的基板的整个后表面接触的下铜板，设置在接收容器中的上铜板，每个上铜板对应于下铜板，并且与基板的前表面分离，以及连接到上铜板和下铜板的电源，用于向其提供电压。可以使用一个装置同时分析多个基板，从而大大减少了分析所需的时间量。

3. 发明授权

US5980720A Methods of treating crystal-grown wafers for surface defect analysis 失效
标题翻译：处理晶体生长晶片进行表面缺陷分析的方法
公开(公告)号：US5980720A
公开(公告)日：1999-11-09
申请号：US977639
申请日：1997-11-24
申请人： Jung-min Park , Jae-gun Park , Gon-sub Lee , Gi-jung Kim
发明人： Jung-min Park , Jae-gun Park , Gon-sub Lee , Gi-jung Kim
IPC分类号： G01N23/18 , G01N1/28 , G01N1/32 , G01N21/95 , H01L21/66 , C25D5/02 , B32B35/00 , C25D5/00 , C25D7/12
CPC分类号： G01N21/9501 , G01N1/32 , H01L22/24 , H01L22/12 , Y10S438/928
摘要： Methods of treating wafers for analyzing defects present therein comprise providing wafers having front side surfaces comprising defective portions and a back side surfaces opposite thereto; and decorating the defective portion of the front side of the wafer with copper.
摘要翻译：处理用于分析其中存在的缺陷的晶片的方法包括提供具有包括缺陷部分的前侧表面和与其相对的背侧表面的晶片; 并用铜装饰晶片正面的缺陷部分。

4. 发明授权

US5972863A Slurry compositions for polishing wafers used in integrated circuit devices and cleaning compositions for removing electron wax after polishing 失效
标题翻译：用于在集成电路器件中使用的抛光晶片的浆料组合物和用于在抛光之后去除电子蜡的清洁组合物
公开(公告)号：US5972863A
公开(公告)日：1999-10-26
申请号：US41274
申请日：1998-03-12
申请人： Tae-yeol Heo , Jung-min Park , Sung-hoon Cho , Gi-jung Kim
发明人： Tae-yeol Heo , Jung-min Park , Sung-hoon Cho , Gi-jung Kim
IPC分类号： B24B37/00 , C09K3/14 , C11D7/06 , C11D7/20 , C11D11/00 , H01L21/304 , C11D3/14 , C11D9/20
CPC分类号： C11D7/20 , C11D11/0047 , C11D7/06
摘要： Compositions useful for polishing wafers to be used in microelectronic devices comprise silicon dioxide, aluminum oxide, sodium hydroxide, and water. Cleaning compositions for removing electron wax from wafers to be used in microelectronic devices comprise from about 2 to about 6 percent by weight of ammonium hydroxide, from about 10 to about 22 percent by weight of hydrogen peroxide, and water.
摘要翻译：用于抛光用于微电子器件的晶片的组合物包括二氧化硅，氧化铝，氢氧化钠和水。用于从微电子器件中使用的晶片去除电子蜡的清洁组合物包含约2-约6重量％的氢氧化铵，约10-约22重量％的过氧化氢和水。

5. 发明授权

US08293613B2 Gettering structures and methods and their application 有权
标题翻译：吸收结构和方法及其应用
公开(公告)号：US08293613B2
公开(公告)日：2012-10-23
申请号：US12926590
申请日：2010-11-29
申请人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
发明人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
IPC分类号： H01L21/331
CPC分类号： H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L2924/00011 , H01L2224/80001
摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.
摘要翻译：半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

6. 发明申请

US20080224269A1 Gettering structures and methods and their application 审中-公开
标题翻译：吸收结构和方法及其应用
公开(公告)号：US20080224269A1
公开(公告)日：2008-09-18
申请号：US12073894
申请日：2008-03-11
申请人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
发明人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
IPC分类号： H01L29/32 , H01L21/22
CPC分类号： H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L2924/00011 , H01L2224/80001
摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.
摘要翻译：半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

7. 发明申请

US20070197143A1 Polishing pad of a chemical mechanical polishing apparatus and method of manufacturing the same 有权
标题翻译：化学机械抛光装置的抛光垫及其制造方法
公开(公告)号：US20070197143A1
公开(公告)日：2007-08-23
申请号：US11706241
申请日：2007-02-15
申请人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
发明人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
IPC分类号： B24B1/00 , B24D11/00
CPC分类号： B24B37/24 , B24D18/0063
摘要： The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or ═O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.
摘要翻译：用于抛光物体的抛光垫的表面具有包括亲水材料的第一部分和包括疏水材料的第二部分。抛光表面的第一部分位于抛光垫的第一区域中，并且抛光表面的第二部分位于抛光垫的与垫的径向方向上与第一区域并置的第二区域中。亲水材料可以是聚合物树脂，其在聚合物的键合位置含有具有OH和/或-O的亲水性官能团。疏水性材料可以是在聚合物的结合位置含有H和/或F的疏水官能团的聚合物树脂。抛光垫通过挤出亲水和疏水材料的相应线来制造。挤出机和背衬相对于彼此移动，使得线形成亲水和疏水材料的同心环。

8. 发明授权

US08143142B2 Method of fabricating epi-wafer, epi-wafer fabricated by the method, and image sensor fabricated using the epi-wafer 失效
标题翻译：通过该方法制造外延晶片，外延晶片的方法和使用外延晶片制造的图像传感器
公开(公告)号：US08143142B2
公开(公告)日：2012-03-27
申请号：US12723882
申请日：2010-03-15
申请人： Young-Soo Park , Gi-Jung Kim , Won-Je Park , Jae-Sik Bae
发明人： Young-Soo Park , Gi-Jung Kim , Won-Je Park , Jae-Sik Bae
IPC分类号： H01L21/322
CPC分类号： H01L21/22 , H01L21/02532 , H01L21/02639 , H01L21/02658 , H01L21/324 , H01L27/14603 , H01L27/14612 , H01L27/14618 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L2224/48095 , H01L2224/48227 , H01L2924/00014
摘要： A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer.
摘要翻译：制造外延晶片的方法包括通过切割单晶硅锭来提供包括硼的晶片，在晶片的一个表面上生长绝缘层，对晶片进行热处理，去除形成在晶片的一个表面上的绝缘层晶片，镜面研磨晶片的一个表面，以及在晶片的一个表面上生长外延层，并且在晶片内形成与晶片和外延层之间的界面相对应的高密度硼层。

9. 发明申请

US20100233869A1 METHOD OF FABRICATING EPI-WAFER, EPI-WAFER FABRICATED BY THE METHOD, AND IMAGE SENSOR FABRICATED USING THE EPI-WAFER 失效
标题翻译：方法制作EPI-WAFER，EPI-WAFER的方法和使用EPI-WAFER制作的图像传感器
公开(公告)号：US20100233869A1
公开(公告)日：2010-09-16
申请号：US12723882
申请日：2010-03-15
申请人： Young-Soo PARK , Gi-Jung KIM , Won-Je PARK , Jae-Sik BAE
发明人： Young-Soo PARK , Gi-Jung KIM , Won-Je PARK , Jae-Sik BAE
IPC分类号： H01L21/322 , H01L21/20
CPC分类号： H01L21/22 , H01L21/02532 , H01L21/02639 , H01L21/02658 , H01L21/324 , H01L27/14603 , H01L27/14612 , H01L27/14618 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L2224/48095 , H01L2224/48227 , H01L2924/00014
摘要： A method of fabricating an epi-wafer includes providing a wafer including boron by cutting a single crystal silicon ingot, growing an insulating layer on one surface of the wafer, performing thermal treatment of the wafer, removing the insulating layer formed on one surface of the wafer, mirror-surface-grinding one surface of the wafer, and growing an epitaxial layer on one surface of the wafer and forming a high-density boron layer within the wafer that corresponds to the interface between the wafer and the epitaxial layer.
摘要翻译：制造外延晶片的方法包括通过切割单晶硅锭来提供包括硼的晶片，在晶片的一个表面上生长绝缘层，对晶片进行热处理，去除形成在晶片的一个表面上的绝缘层晶片，镜面研磨晶片的一个表面，以及在晶片的一个表面上生长外延层，并且在晶片内形成与晶片和外延层之间的界面相对应的高密度硼层。

10. 发明申请

US20080213982A1 METHOD OF FABRICATING SEMICONDUCTOR WAFER 审中-公开
标题翻译：制造半导体波形的方法
公开(公告)号：US20080213982A1
公开(公告)日：2008-09-04
申请号：US12039106
申请日：2008-02-28
申请人： Young-Soo Park , Young-Sam Lim , Young-Nam Kim , Dae-Lok Bae , Joon-Young Choi , Gi-Jung Kim
发明人： Young-Soo Park , Young-Sam Lim , Young-Nam Kim , Dae-Lok Bae , Joon-Young Choi , Gi-Jung Kim
IPC分类号： H01L21/36
CPC分类号： H01L21/76254 , H01L21/0237 , H01L21/02433 , H01L21/0262 , H01L21/02639
摘要： Provided is a method of fabricating a semiconductor wafer. The method includes preparing a substrate wafer having a non-single-crystalline thin layer; disposing at least one single crystalline pattern adjacent to the non-single-crystalline thin layer on the substrate wafer; and forming a material layer contacting the single crystalline pattern on the non-single-crystalline thin layer.
摘要翻译：提供一种制造半导体晶片的方法。该方法包括制备具有非单晶薄层的衬底晶片; 在衬底晶片上设置与非单晶薄层相邻的至少一个单晶图案; 以及在非单晶薄层上形成与单晶图案接触的材料层。

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