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1. 发明申请

US20080213982A1 METHOD OF FABRICATING SEMICONDUCTOR WAFER 审中-公开
标题翻译：制造半导体波形的方法
公开(公告)号：US20080213982A1
公开(公告)日：2008-09-04
申请号：US12039106
申请日：2008-02-28
申请人： Young-Soo Park , Young-Sam Lim , Young-Nam Kim , Dae-Lok Bae , Joon-Young Choi , Gi-Jung Kim
发明人： Young-Soo Park , Young-Sam Lim , Young-Nam Kim , Dae-Lok Bae , Joon-Young Choi , Gi-Jung Kim
IPC分类号： H01L21/36
CPC分类号： H01L21/76254 , H01L21/0237 , H01L21/02433 , H01L21/0262 , H01L21/02639
摘要： Provided is a method of fabricating a semiconductor wafer. The method includes preparing a substrate wafer having a non-single-crystalline thin layer; disposing at least one single crystalline pattern adjacent to the non-single-crystalline thin layer on the substrate wafer; and forming a material layer contacting the single crystalline pattern on the non-single-crystalline thin layer.
摘要翻译：提供一种制造半导体晶片的方法。该方法包括制备具有非单晶薄层的衬底晶片; 在衬底晶片上设置与非单晶薄层相邻的至少一个单晶图案; 以及在非单晶薄层上形成与单晶图案接触的材料层。

2. 发明授权

US08293613B2 Gettering structures and methods and their application 有权
标题翻译：吸收结构和方法及其应用
公开(公告)号：US08293613B2
公开(公告)日：2012-10-23
申请号：US12926590
申请日：2010-11-29
申请人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
发明人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
IPC分类号： H01L21/331
CPC分类号： H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L2924/00011 , H01L2224/80001
摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.
摘要翻译：半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

3. 发明申请

US20080224269A1 Gettering structures and methods and their application 审中-公开
标题翻译：吸收结构和方法及其应用
公开(公告)号：US20080224269A1
公开(公告)日：2008-09-18
申请号：US12073894
申请日：2008-03-11
申请人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
发明人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
IPC分类号： H01L29/32 , H01L21/22
CPC分类号： H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L2924/00011 , H01L2224/80001
摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.
摘要翻译：半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

4. 发明申请

US20110076838A1 Gettering structures and methods and their application 有权
标题翻译：吸收结构和方法及其应用
公开(公告)号：US20110076838A1
公开(公告)日：2011-03-31
申请号：US12926590
申请日：2010-11-29
申请人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
发明人： Young-Soo Park , Young-Nam Kim , Young-Sam Lim , Gi-Jung Kim , Pil-Kyu Kang
IPC分类号： H01L21/322
CPC分类号： H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L2924/00011 , H01L2224/80001
摘要： An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.
摘要翻译：半导体器件的实施例包括半导体衬底，形成在半导体衬底上的第一绝缘层和形成在第一绝缘层上的第一半导体层。在第一绝缘层和第一半导体层中的至少一个中形成至少一个吸杂区域。吸气区域包括多个吸气部位，至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。

5. 发明申请

US20070287280A1 Composition for removing a photoresist and method of forming a bump electrode 审中-公开
标题翻译：用于除去光致抗蚀剂的组合物和形成凸块电极的方法
公开(公告)号：US20070287280A1
公开(公告)日：2007-12-13
申请号：US11808584
申请日：2007-06-12
申请人： Dong-Min Kang , Young-Sam Lim , Gi-Jung Kim , Young-Nam Kim , Yun-Deok Kang , Ji-Sung Lee , Ki-Hyeon Kim , Kyoung-Jin Choi
发明人： Dong-Min Kang , Young-Sam Lim , Gi-Jung Kim , Young-Nam Kim , Yun-Deok Kang , Ji-Sung Lee , Ki-Hyeon Kim , Kyoung-Jin Choi
IPC分类号： H01L21/44
CPC分类号： H01L21/31133 , G03F7/425 , H01L24/11 , H01L24/12 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/11472 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01022 , H01L2924/01027 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/19041
摘要： A composition for removing a photoresist and a method of forming a bump electrode using the composition are provided. The composition includes an amine compound having a hydroxyl group, a polar organic solvent having a heteroatom, an alkylammonium hydroxide and water. The method of forming the bump electrode includes forming a conductive pattern on a substrate, forming a passivation layer on the substrate, the passivation layer having a first opening that partially exposes the conductive pattern, forming a photoresist pattern on the passivation layer, the photoresist pattern having a second opening that exposes the first opening forming a bump electrode that fills the first opening and the second opening, and removing the photoresist pattern from the substrate using a composition including an amine compound having a hydroxyl group, a polar organic solvent having a heteroatom, an alkylammonium hydroxide and water.
摘要翻译：提供了用于除去光致抗蚀剂的组合物和使用该组合物形成凸块电极的方法。该组合物包括具有羟基的胺化合物，具有杂原子的极性有机溶剂，烷基氢氧化铵和水。形成凸起电极的方法包括在衬底上形成导电图案，在衬底上形成钝化层，钝化层具有部分地暴露导电图案的第一开口，在钝化层上形成光致抗蚀剂图案，光致抗蚀剂图案具有露出第一开口的第二开口，其形成充满第一开口和第二开口的凸块电极，并且使用包含具有羟基的胺化合物的组合物，具有杂原子的极性有机溶剂从基板除去光致抗蚀剂图案，烷基氢氧化铵和水。

6. 发明申请

US20060216942A1 Wafer carrier for minimizing contacting area with wafers 审中-公开
标题翻译：用于最小化与晶片接触面积的晶片载体
公开(公告)号：US20060216942A1
公开(公告)日：2006-09-28
申请号：US11373425
申请日：2006-03-10
申请人： Gi-Jung Kim , Sang-Mun Chon , Young-Nam Kim , Dae-Won Kang , Young-Sam Lim
发明人： Gi-Jung Kim , Sang-Mun Chon , Young-Nam Kim , Dae-Won Kang , Young-Sam Lim
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67313 , H01L21/67326
摘要： A wafer carrier is provided. The wafer carrier includes a storage holding member for storing a plurality of wafers and includes a plurality of open portions. The wafer carrier further includes a front fixing plate and a rear fixing plate disposed at a front and a rear end of the storage holding member, respectively. The front and rear fixing plates each face a side of at least one of the plurality of wafers. Moreover, left and right edges of the plurality of wafers stored in the storage holding member are exposed by the plurality of open portions.
摘要翻译：提供晶片载体。晶片载体包括用于存储多个晶片的存储保持构件，并且包括多个开放部分。晶片载体还包括分别设置在存储保持构件的前端和后端的前固定板和后固定板。前固定板和后固定板各自面对多个晶片中的至少一个的一侧。此外，存储在存储保持部件中的多个晶片的左右边缘被多个开口部露出。

7. 发明授权

US07815496B2 Polishing pad of a chemical mechanical polishing apparatus and method of manufacturing the same 有权
标题翻译：化学机械抛光装置的抛光垫及其制造方法
公开(公告)号：US07815496B2
公开(公告)日：2010-10-19
申请号：US11706241
申请日：2007-02-15
申请人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
发明人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , B24D18/0063
摘要： The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or ═O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.
摘要翻译：用于抛光物体的抛光垫的表面具有包括亲水材料的第一部分和包括疏水材料的第二部分。抛光表面的第一部分位于抛光垫的第一区域中，并且抛光表面的第二部分位于抛光垫的与垫的径向方向上与第一区域并置的第二区域中。亲水材料可以是在聚合物的键合位置处含有OH和/或= O的亲水性官能团的聚合物树脂。疏水性材料可以是在聚合物的结合位置含有H和/或F的疏水官能团的聚合物树脂。抛光垫通过挤出亲水和疏水材料的相应线来制造。挤出机和背衬相对于彼此移动，使得线形成亲水和疏水材料的同心环。

8. 发明申请

US20070197143A1 Polishing pad of a chemical mechanical polishing apparatus and method of manufacturing the same 有权
标题翻译：化学机械抛光装置的抛光垫及其制造方法
公开(公告)号：US20070197143A1
公开(公告)日：2007-08-23
申请号：US11706241
申请日：2007-02-15
申请人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
发明人： Young-Sam Lim , Young-Nam Kim , Gi-Jung Kim
IPC分类号： B24B1/00 , B24D11/00
CPC分类号： B24B37/24 , B24D18/0063
摘要： The surface(s) of a polishing pad for polishing an object has a first portion including hydrophilic material and a second portion including hydrophobic material. The first portion of the polishing surface is located in a first region of the polishing pad and the second portion of the polishing surface is located in a second region of the polishing pad juxtaposed with the first region in the radial direction of the pad. The hydrophilic material may be a polymer resin that contains hydrophilic functional groups having OH and/or ═O at bonding sites of the polymer. The hydrophobic material may be a polymer resin that contains hydrophobic functional groups having H and/or F at bonding sites of the polymer. The polishing pad is manufactured by extruding respective lines of the hydrophilic and hydrophobic materials. The extruders and a backing are moved relative to each other such that the lines form concentric rings of the hydrophilic and hydrophobic materials.
摘要翻译：用于抛光物体的抛光垫的表面具有包括亲水材料的第一部分和包括疏水材料的第二部分。抛光表面的第一部分位于抛光垫的第一区域中，并且抛光表面的第二部分位于抛光垫的与垫的径向方向上与第一区域并置的第二区域中。亲水材料可以是聚合物树脂，其在聚合物的键合位置含有具有OH和/或-O的亲水性官能团。疏水性材料可以是在聚合物的结合位置含有H和/或F的疏水官能团的聚合物树脂。抛光垫通过挤出亲水和疏水材料的相应线来制造。挤出机和背衬相对于彼此移动，使得线形成亲水和疏水材料的同心环。

9. 发明授权

US08395270B2 Etching composition for an under-bump metallurgy layer 有权
标题翻译：用于凸块下冶金层的蚀刻组合物
公开(公告)号：US08395270B2
公开(公告)日：2013-03-12
申请号：US13347169
申请日：2012-01-10
申请人： Dong-Min Kang , Bo-Ram Kang , Young-Nam Kim , Young-Sam Lim
发明人： Dong-Min Kang , Bo-Ram Kang , Young-Nam Kim , Young-Sam Lim
IPC分类号： H01L21/28 , H01L21/306
CPC分类号： H01L21/32134 , C23F1/38 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/13099 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/00014
摘要： In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.
摘要翻译：在用于凸块下冶金（UBM）层的蚀刻组合物和形成凸块结构的方法中，蚀刻组合物包含约40重量％至约90重量％的过氧化氢（H 2 O 2），约1重量％至约20重量％的包含氢氧化铵（NH 4 OH）或四烷基氢氧化铵的碱性水溶液，约0.01重量％至约10重量％的醇化合物，和约2重量％至30重量％的乙二胺类螯合剂。蚀刻组合物可以有效地蚀刻包括钛或钛钨的UBM层并除去杂质。形成凸块结构的方法可以采用这种蚀刻组合物。

10. 发明申请

US20120112123A1 ETCHING COMPOSITION FOR AN UNDER-BUMP METALLURGY LAYER 有权
标题翻译：蚀刻组合物用于低压金属层
公开(公告)号：US20120112123A1
公开(公告)日：2012-05-10
申请号：US13347169
申请日：2012-01-10
申请人： Dong-Min Kang , Bo-Ram Kang , Young-Nam Kim , Young-Sam Lim
发明人： Dong-Min Kang , Bo-Ram Kang , Young-Nam Kim , Young-Sam Lim
IPC分类号： C09K13/00
CPC分类号： H01L21/32134 , C23F1/38 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/13099 , H01L2224/16 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/00014
摘要： In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20% by weight of an aqueous basic solution including ammonium hydroxide (NH4OH) or tetraalkylammonium hydroxide, about 0.01% by weight to about 10% by weight of an alcohol compound, and about 2% by weight to 30% by weight of an ethylenediamine-based chelating agent. The etching composition may effectively etch the UBM layer including titanium or titanium tungsten and remove impurities. A method of forming a bump structure may employ such an etching composition.
摘要翻译：在用于凸块下冶金（UBM）层的蚀刻组合物和形成凸块结构的方法中，蚀刻组合物包含约40重量％至约90重量％的过氧化氢（H 2 O 2），约1重量％至约20重量％的包含氢氧化铵（NH 4 OH）或四烷基氢氧化铵的碱性水溶液，约0.01重量％至约10重量％的醇化合物，和约2重量％至30重量％的乙二胺类螯合剂。蚀刻组合物可以有效地蚀刻包括钛或钛钨的UBM层并除去杂质。形成凸块结构的方法可以采用这种蚀刻组合物。

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