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1. 发明授权

US5980720A Methods of treating crystal-grown wafers for surface defect analysis 失效
标题翻译：处理晶体生长晶片进行表面缺陷分析的方法
公开(公告)号：US5980720A
公开(公告)日：1999-11-09
申请号：US977639
申请日：1997-11-24
申请人： Jung-min Park , Jae-gun Park , Gon-sub Lee , Gi-jung Kim
发明人： Jung-min Park , Jae-gun Park , Gon-sub Lee , Gi-jung Kim
IPC分类号： G01N23/18 , G01N1/28 , G01N1/32 , G01N21/95 , H01L21/66 , C25D5/02 , B32B35/00 , C25D5/00 , C25D7/12
CPC分类号： G01N21/9501 , G01N1/32 , H01L22/24 , H01L22/12 , Y10S438/928
摘要： Methods of treating wafers for analyzing defects present therein comprise providing wafers having front side surfaces comprising defective portions and a back side surfaces opposite thereto; and decorating the defective portion of the front side of the wafer with copper.
摘要翻译：处理用于分析其中存在的缺陷的晶片的方法包括提供具有包括缺陷部分的前侧表面和与其相对的背侧表面的晶片; 并用铜装饰晶片正面的缺陷部分。

2. 发明授权

US6146459A Czochralski pullers for manufacturing monocrystalline silicon ingots by controlling temperature at the center and edge of an ingot-melt interface 有权
标题翻译：用于通过控制锭熔体界面中心和边缘的温度来制造单晶硅锭的Czochralski拉拔器
公开(公告)号：US6146459A
公开(公告)日：2000-11-14
申请号：US320102
申请日：1999-05-26
申请人： Jae-gun Park
发明人： Jae-gun Park
IPC分类号： H01L21/322 , C30B15/00 , C30B15/14 , C30B15/20 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10S117/90 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/21
摘要： Czochralski pullers are modified to grow perfect monocrystalline silicon ingots that are free of vacancy agglomerates and interstitial agglomerates, by modifying components of the Czochralski puller to produce a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and is also at least about equal to the temperature gradient at a diffusion length from the cylindrical edge of the ingot. By producing a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and that is also at least about equal to the temperature gradient at a diffusion length from the diffusion edge, an ingot-melt interface that is planar or is convex relative to the silicon melt may be produced. The ingot so pulled is sliced into a plurality of pure silicon wafers that may include point defects but that are free of vacancy agglomerates and interstitial agglomerates.
摘要翻译：通过修改Czochralski拉拔器的组分以在锭 - 熔体界面处产生温度梯度，其在大于约2.5开氏度/毫米的温度梯度下，修改了Czochralski拉拔器以生长没有空隙聚集体和间隙附聚物的完美单晶硅锭并且还至少约等于从锭的圆柱形边缘的扩散长度处的温度梯度。通过在晶锭 - 熔体界面处产生温度梯度，该晶锭 - 熔体界面在锭轴处大于约2.5开氏度/毫米，并且还至少约等于从扩散边缘的扩散长度处的温度梯度，锭熔体可以产生平面的或相对于硅熔体凸出的界面。将如此拉出的锭切成多个纯硅晶片，其可以包括点缺陷，但是没有空隙聚集体和间隙附聚物。

3. 发明授权

US06340392B1 Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface 有权
标题翻译：通过控制锭熔融界面的中心和边缘处的温度来制造单晶硅锭的拉制方法
公开(公告)号：US06340392B1
公开(公告)日：2002-01-22
申请号：US09660456
申请日：2000-09-12
申请人： Jae-gun Park
发明人： Jae-gun Park
IPC分类号： C30B1502
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072
摘要： Czochralski pullers are modified to grow perfect monocrystalline silicon ingots that are free of vacancy agglomerates and interstitial agglomerates, by modifying components of the Czochralski puller to produce a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and is also at least about equal to the temperature gradient at a diffusion length from the cylindrical edge of the ingot. By producing a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and that is also at least about equal to the temperature gradient at a diffusion length from the diffusion edge, an ingot-melt interface that is planar or is convex relative to the silicon melt may be produced. The ingot so pulled is sliced into a plurality of pure silicon wafers that may include point defects but that are free of vacancy agglomerates and interstitial agglomerates.
摘要翻译：通过修改Czochralski拉拔器的组分以在锭 - 熔体界面处产生温度梯度，其在大于约2.5开氏度/毫米的温度梯度下，修改了Czochralski拉拔器以生长没有空隙聚集体和间隙附聚物的完美单晶硅锭并且还至少约等于从锭的圆柱形边缘的扩散长度处的温度梯度。通过在晶锭 - 熔体界面处产生温度梯度，该晶锭 - 熔体界面在锭轴处大于约2.5开氏度/毫米，并且还至少约等于从扩散边缘的扩散长度处的温度梯度，锭熔体可以产生平面的或相对于硅熔体凸出的界面。将如此拉出的锭切成多个纯硅晶片，其可以包括点缺陷，但是没有空隙聚集体和间隙附聚物。

4. 发明授权

US06251184B1 Insulating-containing ring-shaped heat shields for czochralski pullers 有权
标题翻译：绝缘的环形隔热罩，适用于切克劳斯基拉拔器
公开(公告)号：US06251184B1
公开(公告)日：2001-06-26
申请号：US09320210
申请日：1999-05-26
申请人： Jae-gun Park
发明人： Jae-gun Park
IPC分类号： C30B3500
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10S117/90 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088 , Y10T428/21
摘要： Heat shields for Czochralski pullers include a ring-shaped heat shield housing comprising inner and outer heat shield housing walls and an oblique heat shield housing floor and a heat shield housing roof that extend between the inner and outer heat shield housing walls. The heat shield housing contains insulating material therein. A support member is configured to support the heat shield housing within the crucible in a Czochralski puller. In one embodiment, the support member includes at least one support arm that extends to the ring-shaped heat shield housing. The at least one support arm may be hollow and may contain insulating material therein. In another embodiment, the support member is a ring-shaped support member. The ring-shaped support member may include inner and outer support member walls containing insulating material therebetween. The ring-shaped support member may also include at least one window therein. The ring-shaped member may be oblique. According to another aspect, the Czochralski puller also includes a heat pack in the enclosure, surrounding the heater. The heat pack includes an upper heat pack housing and a lower heat pack housing. The lower heat pack housing is filled with heat absorbing material. However, the upper heat pack housing is at least partially unfilled with the heat absorbing material. Preferably, all of the heat absorbing material is removed from the upper heat pack so that the upper heat pack housing is free of the heat absorbing material.
摘要翻译： Czochralski牵引器的隔热罩包括环形隔热罩外壳，其包括内部和外部隔热罩壳体壁和倾斜隔热罩外壳底板以及在内部和外部隔热罩壳体壁之间延伸的隔热罩外壳顶盖。隔热罩在其中包含绝缘材料。支撑构件构造成在切割器拉拔器内将坩埚内的隔热罩支撑住。在一个实施例中，支撑构件包括延伸到环形隔热罩外壳的至少一个支撑臂。至少一个支撑臂可以是中空的并且可以在其中包含绝缘材料。在另一个实施例中，支撑构件是环形支撑构件。环形支撑构件可以包括在其间包含绝缘材料的内部和外部支撑构件壁。环形支撑构件还可以包括至少一个窗口。环状构件可以是倾斜的。根据另一方面，Czochralski拉拔器还包括围绕加热器的封装中的热封。该散热器包括一个上部热包壳体和一个较低的热包壳体。下部散热器壳体上装有吸热材料。然而，上部热包壳体至少部分地未被吸收材料填充。优选地，所有的吸热材料从上部热包装中移除，使得上部热包装壳体不含吸热材料。

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