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1. 发明授权

US08974267B2 Insert carrier and method for the simultaneous double-side material-removing processing of semiconductor wafers 有权
标题翻译：用于半导体晶片的同时双面材料去除处理的插入载体和方法
公开(公告)号：US08974267B2
公开(公告)日：2015-03-10
申请号：US13311575
申请日：2011-12-06
申请人： Georg Pietsch , Michael Kerstan
发明人： Georg Pietsch , Michael Kerstan
IPC分类号： B24B1/00 , B24B37/28
CPC分类号： B24B37/28
摘要： An insert carrier is configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process. The insert carrier includes a core of a first material that has a first surface and a second surface, and at least one opening configured to receive a semiconductor wafer. A coating at least partially covers the first and second surfaces of the core. The coating includes a surface remote from the core that includes a structuring including elevations and depressions. A correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm and an aspect ratio of the structuring is in a range of 0.0004 to 0.4.
摘要翻译：插入物承载件构造成容纳至少一个半导体晶片，用于在研磨，研磨或抛光工艺的两个工作盘之间对晶片进行双面处理。插入物承载件包括具有第一表面和第二表面的第一材料的芯和被配置为接收半导体晶片的至少一个开口。涂层至少部分地覆盖芯的第一和第二表面。涂层包括远离芯的表面，其包括包括高度和凹陷的结构。高度和凹陷的相关长度在0.5mm至25mm的范围内，结构的纵横比在0.0004至0.4的范围内。

2. 发明授权

US08685270B2 Method for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US08685270B2
公开(公告)日：2014-04-01
申请号：US12902558
申请日：2010-10-12
申请人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
发明人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
IPC分类号： C03C15/00 , C03C25/68 , B44C1/22 , H01L21/302 , H01L21/461
CPC分类号： B24B37/042 , B24B37/08 , H01L21/02013 , H01L21/02019 , H01L21/02021 , H01L21/02024
摘要： A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.
摘要翻译：用于制造从单晶切片的半导体晶片的方法包括使用包含平均粒径为20.0-60.0μm的研磨剂的研磨盘对边缘进行四舍五入。进行第一同时双面材料去除工艺，其中半导体晶片在两个旋转环形工作盘之间加工，每个工作盘具有包含平均粒度为5.0-20.0μm的研磨剂的工作层，其中半导体晶片被放置在由滚动装置旋转的多个载体之一的切口中，使得半导体晶片以可自由移动的方式位于载体中，并且晶片可以在摆线轨迹上移动。进行第二同时双面材料去除处理，包括在两个旋转环形工作盘之间处理半导体晶片，每个工作盘具有包含平均晶粒尺寸为0.5-15.0μm的研磨剂的工作层。

3. 发明申请

US20120189777A1 METHOD FOR PROVIDING A RESPECTIVE FLAT WORKING LAYER ON EACH OF THE TWO WORKING DISKS OF A DOUBLE-SIDE PROCESSING APPARATUS 有权
标题翻译：在双面加工设备的两个工作盘上提供相应的平板工作层的方法
公开(公告)号：US20120189777A1
公开(公告)日：2012-07-26
申请号：US13349639
申请日：2012-01-13
申请人： Georg Pietsch
发明人： Georg Pietsch
IPC分类号： B05D3/12
CPC分类号： B24B53/017 , B24B37/08 , B24B37/245
摘要： A method provides a respective flat working layer on each of two working disks of a double-side processing apparatus including a ring-shaped upper working disk, a ring shaped lower working disk and a rolling apparatus that are rotatably mounted about an axis of symmetry of the double-side processing apparatus. The method includes applying a lower intermediate layer and upper intermediate layer on respective surfaces of the lower and upper working disks. Then, simultaneous leveling of both intermediate layers is performed by moving trimming apparatuses on cycloidal paths over the intermediate layers using the rolling apparatus and the respective outer toothing under pressure and with addition of a cooling lubricant, so as to provide a material removal from the intermediate layers. A lower working layer of uniform thickness is then applied to the lower intermediate layer and an upper working layer of uniform thickness is applied to the upper intermediate layer.
摘要翻译：一种方法在双面处理装置的两个工作盘中的每一个上提供相应的平坦工作层，该双面处理装置包括环形上工作盘，环形下工作盘和滚动装置，其围绕对称轴可旋转地安装双面处理装置。该方法包括在下部和上部工作盘的相应表面上施加下部中间层和上部中间层。然后，通过使用滚动装置和相应的外部齿轮在压力下移动中间层上的摆线路径上的修剪装置并添加冷却润滑剂来进行两个中间层的同时调平，从而提供从中间层层。然后将下层的均匀厚度的工作层施加到下中间层，并且将均匀厚度的上工作层施加到上中间层。

4. 发明申请

US20110133314A1 METHOD FOR PRODUCING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：生产半导体波形的方法
公开(公告)号：US20110133314A1
公开(公告)日：2011-06-09
申请号：US12939324
申请日：2010-11-04
申请人： Georg Pietsch , Walter Haeckl , Juergen Schwandner , Noemi Banos
发明人： Georg Pietsch , Walter Haeckl , Juergen Schwandner , Noemi Banos
IPC分类号： H01L29/30 , H01L21/20
CPC分类号： H01L21/02024 , C30B15/04 , C30B29/06 , C30B33/00
摘要： A method for producing a semiconductor wafer includes pulling a single crystal of semiconductor material, slicing a semiconductor wafer from the single crystal and polishing the semiconductor wafer with the polishing pad and polishing agent. The polishing agent is free of solid materials having abrasive action and the polishing pad contains fixedly bonded solid materials with abrasive action. During polishing the polishing agent is supplied in a gap between the semiconductor wafer and polishing pad. The polishing agent has a pH value in a range of 9.5 to 12.5.
摘要翻译：一种制造半导体晶片的方法，包括拉制半导体材料的单晶，从单晶切割半导体晶片，并用抛光垫和抛光剂研磨半导体晶片。抛光剂不含具有研磨作用的固体材料，抛光垫包含具有研磨作用的固定粘结固体材料。在抛光期间，在半导体晶片和抛光垫之间的间隙中提供抛光剂。抛光剂的pH值在9.5至12.5的范围内。

5. 发明申请

US20110097975A1 METHOD FOR PRODUCING A SEMICONDUCTOR WAFER 有权
标题翻译：生产半导体波形的方法
公开(公告)号：US20110097975A1
公开(公告)日：2011-04-28
申请号：US12902558
申请日：2010-10-12
申请人： Juergen SCHWANDNER , Thomas BUSCHHARDT , Diego FEIJOO , Michael KERSTAN , Georg PIETSCH , Guenter SCHWAB
发明人： Juergen SCHWANDNER , Thomas BUSCHHARDT , Diego FEIJOO , Michael KERSTAN , Georg PIETSCH , Guenter SCHWAB
IPC分类号： B24B7/17 , B24B9/06
CPC分类号： B24B37/042 , B24B37/08 , H01L21/02013 , H01L21/02019 , H01L21/02021 , H01L21/02024
摘要： A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.
摘要翻译：用于制造从单晶切片的半导体晶片的方法包括使用包含平均粒径为20.0-60.0μm的研磨剂的研磨盘对边缘进行四舍五入。进行第一同时双面材料去除工艺，其中半导体晶片在两个旋转环形工作盘之间加工，每个工作盘具有包含平均粒度为5.0-20.0μm的研磨剂的工作层，其中半导体晶片被放置在由滚动装置旋转的多个载体之一的切口中，使得半导体晶片以可自由移动的方式位于载体中，并且晶片可以在摆线轨迹上移动。进行第二同时双面材料去除处理，包括在两个旋转环形工作盘之间处理半导体晶片，每个工作盘具有包含平均晶粒尺寸为0.5-15.0μm的研磨剂的工作层。

6. 发明申请

US20100099337A1 Device For The Double-Sided Processing Of Flat Workpieces and Method For The Simultaneous Double-Sided Material Removal Processing Of A Plurality Of Semiconductor Wafers 有权
标题翻译：用于双面加工平面工件的装置和用于多个半导体晶片的同时双面材料去除处理的方法
公开(公告)号：US20100099337A1
公开(公告)日：2010-04-22
申请号：US12581195
申请日：2009-10-19
申请人： Michael Kerstan , Georg Pietsch , Frank Runkel , Conrad von Bechtolsheim , Helge Moeller
发明人： Michael Kerstan , Georg Pietsch , Frank Runkel , Conrad von Bechtolsheim , Helge Moeller
IPC分类号： B24B7/17 , B24B1/00 , B24B47/12
CPC分类号： B24B7/17 , B24B37/08 , B24B47/12
摘要： A device for double-sided processing of flat workpieces has upper and lower working discs forming between them a working gap containing a carrier disc with cutout(s) for workpiece(s), the carrier disc having circumferential teeth by means of which it rolls on an inner and an outer gear wheel or pin ring, wherein the gear wheels or pin rings have a multiplicity of gear or pin arrangements which engage the teeth of the carrier discs during rolling, at least one of the pin arrangements having a guide which delimits movement of the margin of the carrier disc in at least one axial direction, the guide formed by a circumferential shoulder or a circumferential groove.
摘要翻译：用于平面工件的双面加工的装置具有在其间形成有上下工作盘的工作间隙，该工作间隙包含具有用于工件的切口的托盘，所述托盘具有周向齿，通过该圆周齿滚动内齿轮或外齿轮或销环，其中齿轮或销环具有多个齿轮或销布置，其在滚动期间与承载盘的齿啮合，至少一个销装置具有限定运动的导向件载体盘的边缘在至少一个轴向方向上，引导件由圆周肩部或周向凹槽形成。

7. 发明授权

US6051498A Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish 失效
标题翻译：制造半导体晶片的方法，该半导体晶片被涂覆在一侧并具有光洁度
公开(公告)号：US6051498A
公开(公告)日：2000-04-18
申请号：US3490
申请日：1998-01-06
申请人： Georg Pietsch , Bernd Sauter , Ernst Feuchtinger
发明人： Georg Pietsch , Bernd Sauter , Ernst Feuchtinger
IPC分类号： B24B37/08 , H01L21/02 , H01L21/20 , H01L21/304 , H01L21/302
CPC分类号： H01L21/02024 , B24B37/08 , H01L21/2007
摘要： A method for manufacturing a semiconductor wafer which is coated on one s and provided with a finish has a) the semiconductor wafer being subjected to a first treatment (double-sided finish) which produces a finish on both sides of the semiconductor wafer at the same time; has b) at least one coating being produced on one side of the semiconductor wafer; and has c) the semiconductor wafer being subjected to a second treatment which produces a double-sided finish.
摘要翻译：制造半导体晶片的方法，该半导体晶片被涂覆在一侧并具有光洁度，其具有：a）半导体晶片经受第一次处理（双面光洁度），该半导体晶片在该半导体晶片的两侧产生光洁度时间; 具有b）在半导体晶片的一侧上产生至少一个涂层; 并且c）半导体晶片经受第二次处理，产生双面抛光。

8. 发明授权

US08512099B2 Method for the simultaneous double-sided material removal processing of a plurality of semiconductor wafers 有权
标题翻译：多个半导体晶片同时进行双面材料去除处理的方法
公开(公告)号：US08512099B2
公开(公告)日：2013-08-20
申请号：US12581195
申请日：2009-10-19
申请人： Michael Kerstan , Georg Pietsch , Frank Runkel , Conrad von Bechtolsheim , Helge Moeller
发明人： Michael Kerstan , Georg Pietsch , Frank Runkel , Conrad von Bechtolsheim , Helge Moeller
IPC分类号： B24B1/00
CPC分类号： B24B7/17 , B24B37/08 , B24B47/12
摘要： A device for double-sided processing of flat workpieces has upper and lower working discs forming between them a working gap containing a carrier disc with cutout(s) for workpiece(s), the carrier disc having circumferential teeth by means of which it rolls on an inner and an outer gear wheel or pin ring, wherein the gear wheels or pin rings have a multiplicity of gear or pin arrangements which engage the teeth of the carrier discs during rolling, at least one of the pin arrangements having a guide which delimits movement of the margin of the carrier disc in at least one axial direction, the guide formed by a circumferential shoulder or a circumferential groove.
摘要翻译：用于平面工件的双面加工的装置具有在其间形成有上下工作盘的工作间隙，该工作间隙包含具有用于工件的切口的托盘，所述托盘具有周向齿，通过该圆周齿滚动内齿轮或外齿轮或销环，其中齿轮或销环具有多个齿轮或销布置，其在滚动期间与承载盘的齿啮合，至少一个销装置具有限定运动的导向件载体盘的边缘在至少一个轴向方向上，引导件由圆周肩部或周向凹槽形成。

9. 发明授权

US08113913B2 Method for the simultaneous grinding of a plurality of semiconductor wafers 有权
标题翻译：用于同时研磨多个半导体晶片的方法
公开(公告)号：US08113913B2
公开(公告)日：2012-02-14
申请号：US12048267
申请日：2008-03-14
申请人： Georg Pietsch , Michael Kerstan , Heiko aus dem Spring
发明人： Georg Pietsch , Michael Kerstan , Heiko aus dem Spring
IPC分类号： B24B49/00
CPC分类号： B24B37/28 , B24B37/08 , B24B37/12
摘要： Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer.
摘要翻译：多个半导体晶片的同时双面研磨包括将每个晶片自由定位在摆线轨迹上旋转的多个载体之一的切口中，其中晶片在两个旋转环形工作盘之间加工，每个盘具有工作粘合磨料层，其中在研磨期间确定工作层之间的工作间隙的形式，并且改变至少一个盘的工作区域的形式，使得间隙具有预定形式。在加工期间，晶片可能暂时悬垂在间隙上。载体任选地仅由第一材料构成，或者完全或部分地涂覆有第一材料，使得在加工期间仅第一材料接触工作层，并且第一材料不降低工作层的加工能力。

10. 发明申请

US20120028546A1 METHOD AND APPARATUS FOR TRIMMING THE WORKING LAYERS OF A DOUBLE-SIDE GRINDING APPARATUS 有权
标题翻译：用于调整双面磨床的工作层的方法和装置
公开(公告)号：US20120028546A1
公开(公告)日：2012-02-02
申请号：US13181619
申请日：2011-07-13
申请人： Georg Pietsch , Michael Kerstan
发明人： Georg Pietsch , Michael Kerstan
IPC分类号： B24B1/00
CPC分类号： B24B53/017 , B24B37/08 , B24B37/28
摘要： A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers.
摘要翻译：一种用于修整两个工作层的方法，包括施加在平面工件的同时双面加工的研磨装置的上下工作盘的相互面对的侧面上的粘结磨料，包括提供包括上下工作盘和提供至少一个包括外齿的载体。上下工作盘旋转。载体使用滚动装置在旋转的工作盘之间移动，并且相对于工作盘的工作层在摆线路径上移动外齿。将松散的磨料添加到在工作层之间形成的工作间隙中。没有插入其中的工件的载体在工作间隙中移动，以便从工作层中去除材料。

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