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1. 发明授权

US08501028B2 Method for grinding a semiconductor wafer 有权
标题翻译：半导体晶片研磨方法
公开(公告)号：US08501028B2
公开(公告)日：2013-08-06
申请号：US12894468
申请日：2010-09-30
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： B44C1/22
CPC分类号： H01L21/02013
摘要： A method for processing a semiconductor wafer includes bringing at least one grinding tool in contact with the semiconductor wafer; removing material from the semiconductor wafer using the grinding tool; disposing a liquid medium having a viscosity of at least 3×10−3 N/m2·s and at most 100×10−3 N/m2·s between the at least one grinding tool and the semiconductor wafer; and separating the at least one grinding tool and the semiconductor wafer so as to end the processing.
摘要翻译：一种用于处理半导体晶片的方法包括使至少一个研磨工具与半导体晶片接触; 使用所述研磨工具从所述半导体晶片去除材料; 在所述至少一个研磨工具和所述半导体晶片之间配置粘度为3×10 -3 N / m 2·s以上且100×10 -3 N / m·s以下的液体介质; 以及分离所述至少一个研磨工具和所述半导体晶片以结束所述处理。

2. 发明申请

US20120149198A1 METHOD FOR PRODUCING A SEMICONDUCTOR WAFER 有权
标题翻译：生产半导体波形的方法
公开(公告)号：US20120149198A1
公开(公告)日：2012-06-14
申请号：US13392151
申请日：2010-08-11
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： H01L21/306
CPC分类号： H01L21/02008 , H01L21/02024
摘要： A method for producing a semiconductor wafer includes a number of steps in order including a bilateral material-removing process followed by rounding off an edge of the wafer and grinding front and back sides of the wafer by holding one side and grinding the other. The front and back are then polished with a polishing cloth including bound abrasives and subsequently treated with an etching medium to carry out a material removal of no more than 1μm on each side. The front side is then polished using a polishing cloth including bound abrasives and the back side is simultaneously polished using a polishing cloth free of abrasives while a polish with abrasives is provided. The edge is then polished followed by polishing the back with a polishing cloth including bound abrasives and simultaneously polishing the front with a cloth free of abrasives while a polish including abrasives is provided.
摘要翻译：制造半导体晶片的方法包括多个步骤，其包括双面材料去除工艺，随后将晶圆的边缘倒圆，并通过夹持一侧并研磨另一侧来研磨晶片的正面和背面。然后用包括结合的研磨剂的抛光布抛光正面和背面，然后用蚀刻介质进行处理，以进行每侧不超过1μm的材料去除。然后使用包括结合磨料的抛光布抛光前侧，并且使用不含磨料的抛光布同时抛光背面，同时提供具有磨料的抛光剂。然后将边缘抛光，然后用抛光布抛光背面，包括结合的磨料，同时用不含磨料的布抛光前面，同时提供包括研磨剂的抛光剂。

3. 发明申请

US20110223841A1 METHOD FOR POLISHING A SEMICONDUCTOR WAFER 审中-公开
标题翻译：抛光半导体波长的方法
公开(公告)号：US20110223841A1
公开(公告)日：2011-09-15
申请号：US13038455
申请日：2011-03-02
申请人： Juergen Schwandner , Michael Kerstan
发明人： Juergen Schwandner , Michael Kerstan
IPC分类号： B24B1/00
CPC分类号： H01L21/02024
摘要： A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids.
摘要翻译：抛光半导体晶片的方法包括在第一步骤期间提供包含研磨剂的抛光剂浆料时，使用抛光垫来抛光半导体晶片的表面。抛光垫没有磨料，并且包括接触半导体晶片的第一表面，第一表面具有包括立面的表面结构。随后结束抛光剂浆料的供应，在第二步骤中，使用抛光垫对半导体晶片的表面进行抛光，同时提供不含固体的pH值至少为12的抛光剂溶液。

4. 发明申请

US20100330881A1 Method For The Double Sided Polishing Of A Semiconductor Wafer 有权
标题翻译：半导体晶片双面抛光方法
公开(公告)号：US20100330881A1
公开(公告)日：2010-12-30
申请号：US12771030
申请日：2010-04-30
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B7/228 , B24B37/08
摘要： Semiconductor wafers are double sided polished by a method of polishing a frontside of the wafer in a first step with a polishing pad with fixed abrasive and simultaneously polishing a backside of the wafer with a polishing pad containing no abrasive, but during which an abrasive polishing agent is introduced between the polishing pad and the backside of the wafer, inverting the wafer, and then in a second step polishing the backside of the wafer with a polishing pad containing fixed abrasive and simultaneously polishing the frontside of the wafer with a polishing pad containing no fixed abrasive, a polishing agent containing abrasive being introduced between the polishing pad and the frontside of the semiconductor wafer.
摘要翻译：半导体晶片通过在第一步骤中抛光晶片前端的方法进行双面抛光，其中抛光垫具有固定磨料并且同时用不含研磨剂的抛光垫抛光晶片的背面，但在此期间研磨抛光剂引入到抛光垫和晶片的背面之间，反转晶片，然后在第二步骤中，用包含固定磨料的抛光垫抛光晶片的背面，并用抛光垫同时抛光晶片的前侧，固定研磨剂，含有磨料的抛光剂引入到抛光垫和半导体晶片的前侧之间。

5. 发明申请

US20100330786A1 Method For Producing An Epitaxially Coated Semiconductor Wafer 有权
标题翻译：生产外延涂覆半导体晶片的方法
公开(公告)号：US20100330786A1
公开(公告)日：2010-12-30
申请号：US12797877
申请日：2010-06-10
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： H01L21/20 , H01L21/306
CPC分类号： H01L21/30625 , B24B37/04
摘要： Epitaxially coated semiconductor wafers are produced by minimally the following steps in the order specified: (a) depositing an epitaxial layer on one side of a semiconductor wafer; (b) first polishing the epitaxially coated side of the semiconductor wafer with a polishing pad with fixed abrasive while supplying a polishing solution which is free of solids; (c) CMP polishing of the epitaxially coated side of the semiconductor wafer with a soft polishing pad which contains no fixed abrasive, while supplying a polishing agent suspension; (d) depositing another epitaxial layer on the previously epitaxially coated and polished side of the semiconductor wafer.
摘要翻译：外延涂覆的半导体晶片按照以下顺序通过最少的以下步骤制造：（a）在半导体晶片的一侧上沉积外延层; （b）用具有固定磨料的抛光垫首先抛光半导体晶片的外延涂覆侧，同时供给不含固体的抛光溶液; （c）在提供抛光剂悬浮液的同时，用不含固定磨料的软抛光垫对半导体晶片的外延涂覆侧进行CMP抛光; （d）在半导体晶片的先前外延涂覆和抛光的一侧上沉积另一个外延层。

6. 发明申请

US20090029552A1 Method For Polishing A Substrate Composed Of Semiconductor Material 有权
标题翻译：抛光由半导体材料组成的基板的方法
公开(公告)号：US20090029552A1
公开(公告)日：2009-01-29
申请号：US12166486
申请日：2008-07-02
申请人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert , Georg Pietsch
发明人： Juergen Schwandner , Thomas Buschhardt , Roland Koppert , Georg Pietsch
IPC分类号： H01L21/465
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step B by means of which the substrate is polished on a polishing pad containing an abrasive material-containing polishing pad and wherein a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step.
摘要翻译：通过包括至少一个研磨步骤A的方法对半导体材料基板进行抛光，利用该抛光步骤A，在包含在研磨垫中结合的研磨材料的抛光垫上抛光基板，并且将抛光剂溶液引入到基板和抛光垫在抛光步骤中; 以及至少一个抛光步骤B，通过该抛光步骤B将衬底抛光在包含含研磨材料的抛光垫的抛光垫上，并且其中在抛光步骤中将含有未结合磨料的抛光剂浆料引入衬底和抛光垫之间。

7. 发明申请

US20080265375A1 Methods for the single-sided polishing of semiconductor wafers and semiconductor wafer having a relaxed Si1-x GEx Layer 审中-公开
标题翻译：具有弛豫Si1-xGGx层的半导体晶片和半导体晶片的单面抛光方法
公开(公告)号：US20080265375A1
公开(公告)日：2008-10-30
申请号：US12148739
申请日：2008-04-22
申请人： Georg Pietsch , Thomas Buschhardt , Juergen Schwandner
发明人： Georg Pietsch , Thomas Buschhardt , Juergen Schwandner
IPC分类号： H01L21/306 , H01L29/30
CPC分类号： H01L21/30625 , C09G1/02
摘要： Single-sided polishing of semiconductor wafers provided with a relaxed Si1-xGex layer involves polishing of a multiplicity of wafers in a plurality of polishing runs, a polishing run having at least one polishing step, at least one of the multiplicity of wafers obtained with a polished Si1-xGex layer at the end of each polishing run; moving the wafer during the polishing step over a rotating polishing plate provided with a polishing cloth while applying polishing pressure, and supplying polishing agent between the polishing cloth and the semiconductor wafer, the polishing agent containing an alkaline component and a component that dissolves germanium. Semiconductor wafer having a Si1-xGex layer substantially free of defects and haze is produced.
摘要翻译：设置有松弛的Si 1-x N x层的半导体晶片的单面抛光涉及在多个抛光运行中抛光多个晶片，抛光运行具有至少一个研磨步骤，在每个抛光运行结束时用抛光的Si 1-x Ge x N层获得的多个晶片中的至少一个; 在抛光步骤期间将晶片在设置有抛光布的旋转抛光板上移动，同时施加抛光压力，并在抛光布和半导体晶片之间提供抛光剂，抛光剂含有碱性成分和溶解锗的成分。产生具有基本上没有缺陷和雾度的Si 1-x N z O x S层的半导体晶片。

8. 发明授权

US09224613B2 Method for polishing both sides of a semiconductor wafer 有权
标题翻译：抛光半导体晶片两侧的方法
公开(公告)号：US09224613B2
公开(公告)日：2015-12-29
申请号：US12582788
申请日：2009-10-21
申请人： Juergen Schwandner
发明人： Juergen Schwandner
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , B44C1/22 , H01L21/304 , B24B37/04 , B24B37/08
CPC分类号： H01L21/304 , B24B37/042 , B24B37/08 , H01L21/461 , Y10T428/24355
摘要： Both sides of a large diameter semiconductor wafer are polished by the following ordered steps: a) polishing the wafer backside on a polishing pad containing a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer backside and the polishing pad; b) stock polishing the wafer frontside on a polishing pad which contains a fixed abrasive, a polishing agent solution free of solids being introduced between the wafer frontside of and the polishing pad; c) removing microroughness and microdamage from the wafer frontside by polishing the frontside on a polishing pad, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad; and d) final polishing of the wafer frontside by polishing the frontside on a polishing pad containing no fixed abrasive, a polishing agent solution containing abrasives being introduced between the wafer frontside and the polishing pad during the polishing step.
摘要翻译：通过以下有序步骤对大直径半导体晶片的两侧进行抛光：a）在包含固定磨料的抛光垫上抛光晶片背面，在晶片背面和抛光垫之间引入不含固体的抛光剂溶液; b）在包含固定研磨剂的抛光垫上抛光晶片正面，在晶片前端和抛光垫之间引入不含固体的抛光剂溶液; c）通过在抛光垫上抛光前缘来去除晶片前方的微粗糙度和微小损伤;将抛光剂溶液包含在晶片前端和抛光垫之间引入; 以及d）通过在不含固定研磨剂的抛光垫上抛光前侧来研磨晶片前端的最后抛光，在抛光步骤期间将含有磨料的抛光剂溶液引入晶片前侧和抛光垫之间。

9. 发明授权

US08882565B2 Method for polishing a semiconductor wafer 有权
标题翻译：抛光半导体晶片的方法
公开(公告)号：US08882565B2
公开(公告)日：2014-11-11
申请号：US13042587
申请日：2011-03-08
申请人： Juergen Schwandner , Roland Koppert
发明人： Juergen Schwandner , Roland Koppert
IPC分类号： B24B1/00 , H01L21/02 , B24B37/005
CPC分类号： B24B37/0056 , H01L21/02024
摘要： A method of polishing a semiconductor wafer includes applying a polishing pad to the semiconductor wafer so as to subject the semiconductor wafer to a polishing process and supplying an aqueous polishing agent solution between the polishing pad and the semiconductor wafer. The polishing pad includes fixedly bonded abrasives of SiO2 with an average grain size in a range of 0.1 to 1.0 μm. The aqueous polishing agent solution comprising an alkaline component, being free of solid materials and having a variable pH value in a range of 11 to 13.5. The aqueous polishing agent solution is maintained at a pH value of less than 13 during the polishing process and the pH value of the aqueous polishing agent solution is increased to a range of 13 to 13.5 so as to end the polishing process.
摘要翻译：抛光半导体晶片的方法包括将抛光垫施加到半导体晶片，以便对半导体晶片进行抛光处理，并在抛光垫和半导体晶片之间提供水性抛光剂溶液。抛光垫包括固定粘结的SiO 2研磨剂，其平均粒度在0.1至1.0μm的范围内。该水性抛光剂溶液包含碱性组分，不含固体材料，其pH值可变在11至13.5的范围内。在研磨工序中，水性研磨剂溶液的pH值保持在13以下，水性研磨剂溶液的pH值提高到13〜13.5的范围，结束研磨处理。

10. 发明授权

US08685270B2 Method for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US08685270B2
公开(公告)日：2014-04-01
申请号：US12902558
申请日：2010-10-12
申请人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
发明人： Juergen Schwandner , Thomas Buschhardt , Diego Feijoo , Michael Kerstan , Georg Pietsch , Guenter Schwab
IPC分类号： C03C15/00 , C03C25/68 , B44C1/22 , H01L21/302 , H01L21/461
CPC分类号： B24B37/042 , B24B37/08 , H01L21/02013 , H01L21/02019 , H01L21/02021 , H01L21/02024
摘要： A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first simultaneous double-side material-removing process is performed wherein the semiconductor wafers are processed between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 5.0-20.0 μm, wherein the semiconductor wafer is placed in a cutout in one of a plurality of carriers rotatable by a rolling apparatus such that the semiconductor wafer lies in a freely movable manner in the carrier and the wafer is movable on a cycloidal trajectory. A second simultaneous double-side material-removing process is performed including processing the semiconductor wafers between two rotating ring-shaped working disks, each working disk having a working layer containing abrasives having an average grain size of 0.5-15.0 μm.
摘要翻译：用于制造从单晶切片的半导体晶片的方法包括使用包含平均粒径为20.0-60.0μm的研磨剂的研磨盘对边缘进行四舍五入。进行第一同时双面材料去除工艺，其中半导体晶片在两个旋转环形工作盘之间加工，每个工作盘具有包含平均粒度为5.0-20.0μm的研磨剂的工作层，其中半导体晶片被放置在由滚动装置旋转的多个载体之一的切口中，使得半导体晶片以可自由移动的方式位于载体中，并且晶片可以在摆线轨迹上移动。进行第二同时双面材料去除处理，包括在两个旋转环形工作盘之间处理半导体晶片，每个工作盘具有包含平均晶粒尺寸为0.5-15.0μm的研磨剂的工作层。

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