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    • 2. 发明授权
    • Semiconductor wafer, apparatus and process for producing the semiconductor wafer
    • 用于制造半导体晶片的半导体晶片,装置和工艺
    • US07867059B2
    • 2011-01-11
    • US11941171
    • 2007-11-16
    • Georg PietschMichael KerstanWerner Blaha
    • Georg PietschMichael KerstanWerner Blaha
    • B24B49/00
    • H01L21/02013B24B7/17B24B7/228B24D7/14
    • The invention relates to a process for producing a semiconductor wafer by double-side grinding of the semiconductor wafer, in which the semiconductor wafer is simultaneously ground on both sides, first by rough-grinding and then by finish-grinding, using a grinding tool. The semiconductor wafer, between the rough-grinding and the finish-grinding, remains positioned in the grinding machine, and the grinding tool continues to apply a substantially constant load during the transition from rough-grinding to finish-grinding. The invention also relates to an apparatus for carrying out the process and to a semiconductor wafer having a local flatness value on a front surface of less than 16 nm in a measurement window of 2 mm×2 mm area and of less than 40 nm in a measurement window of 10 mm×10 mm area.
    • 本发明涉及通过半导体晶片的双面研磨制造半导体晶片的方法,其中半导体晶片在两侧同时研磨,首先通过粗磨,然后使用研磨工具进行精磨。 在粗磨和精磨之间的半导体晶片保持定位在研磨机中,并且研磨工具在从粗磨到精磨过渡期间继续施加基本恒定的载荷。 本发明还涉及一种用于在2mm×2mm面积的测量窗口中在小于16nm的前表面上具有局部平坦度值并且小于40nm的半导体晶片的半导体晶片 测量窗口为10mm×10 mm面积。
    • 3. 发明授权
    • Insert carrier and method for the simultaneous double-side material-removing processing of semiconductor wafers
    • 用于半导体晶片的同时双面材料去除处理的插入载体和方法
    • US08974267B2
    • 2015-03-10
    • US13311575
    • 2011-12-06
    • Georg PietschMichael Kerstan
    • Georg PietschMichael Kerstan
    • B24B1/00B24B37/28
    • B24B37/28
    • An insert carrier is configured to receive at least one semiconductor wafer for double-side processing of the wafer between two working disks of a lapping, grinding or polishing process. The insert carrier includes a core of a first material that has a first surface and a second surface, and at least one opening configured to receive a semiconductor wafer. A coating at least partially covers the first and second surfaces of the core. The coating includes a surface remote from the core that includes a structuring including elevations and depressions. A correlation length of the elevations and depressions is in a range of 0.5 mm to 25 mm and an aspect ratio of the structuring is in a range of 0.0004 to 0.4.
    • 插入物承载件构造成容纳至少一个半导体晶片,用于在研磨,研磨或抛光工艺的两个工作盘之间对晶片进行双面处理。 插入物承载件包括具有第一表面和第二表面的第一材料的芯和被配置为接收半导体晶片的至少一个开口。 涂层至少部分地覆盖芯的第一和第二表面。 涂层包括远离芯的表面,其包括包括高度和凹陷的结构。 高度和凹陷的相关长度在0.5mm至25mm的范围内,结构的纵横比在0.0004至0.4的范围内。
    • 7. 发明授权
    • Method for trimming the working layers of a double-side grinding apparatus
    • 一种用于修整双面研磨装置的工作层的方法
    • US08911281B2
    • 2014-12-16
    • US13181619
    • 2011-07-13
    • Georg PietschMichael Kerstan
    • Georg PietschMichael Kerstan
    • B24B1/00B24B53/017B24B37/08B24B37/28
    • B24B53/017B24B37/08B24B37/28
    • A method for trimming two working layers including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpiece includes providing the grinding apparatus including the upper and lower working disks and providing at least one carrier including an outer toothing. The upper and lower working disks are rotated. The carrier is moved between the rotating working disks using a rolling apparatus and the outer toothing on cycloidal paths relative to working layers of the working disks. Loose abrasives are added to a working gap formed between the working layers. A carrier, without workpieces inserted therein, is moved in the working gap so as to effect material removal from the working layers.
    • 一种用于修整两个工作层的方法,包括施加在平面工件的同时双面加工的研磨装置的上下工作盘的相互面对的侧面上的粘结磨料,包括提供包括上下工作盘和 提供至少一个包括外齿的载体。 上下工作盘旋转。 载体使用滚动装置在旋转的工作盘之间移动,并且相对于工作盘的工作层在摆线路径上移动外齿。 将松散的磨料添加到在工作层之间形成的工作间隙中。 没有插入其中的工件的载体在工作间隙中移动,以便从工作层中去除材料。