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    • 4. 发明授权
    • Garnet magnetoresistive sensor for magnetic fields
    • 用于磁场的石榴石磁阻传感器
    • US4198689A
    • 1980-04-15
    • US937958
    • 1978-08-30
    • Ernst M. GyorgyRoy C. Le CrawRaymond Wolfe
    • Ernst M. GyorgyRoy C. Le CrawRaymond Wolfe
    • G11B5/39G11C19/08
    • G11B5/3903G11C19/0866
    • The discovery of a magnetoresistive effect in oriented, crystalline, semiconducting iron garnet materials is used to design devices which detect the presence or orientation of magnetic fields. The principal measure of this effect is that the resistance between two electrodes (12) on the garnet body (11) varies as an imposed magnetic field (14, 15) produces a change in the direction of the magnetization of the body (11). This effect is useful when the garnet is so constituted as to possess a resistivity from 10.sup.3 to 10.sup.7 ohm-centimeters. Also, the anisotropy field of the garnet body must be comparable to less than the magnitude of the magnetic field to be detected. One aspect of particular utility for magnetic "bubble" detectors (in magnetic bubble memories) is the isotropic character of the resistance when the magnetization is varied in the (111) plane but the significant change of resistance when the magnetization is moved to the [111] direction.
    • 在定向,晶体,半导体铁石榴石材料中发现磁阻效应用于设计检测磁场的存在或取向的装置。 这种效果的主要措施是,当施加的磁场(14,15)产生主体(11)的磁化方向的变化时,石榴石体(11)上的两个电极(12)之间的电阻变化。 当石榴石构成为具有103至107欧姆厘米的电阻率时,该效果是有用的。 此外,石榴石体的各向异性场必须与要检测的磁场的大小相当。 磁性“气泡”检测器(在磁性气泡存储器中)的特殊用途的一个方面是当磁化在(111)平面中变化时电阻的各向同性特征,但当磁化移动到[111 ]方向。
    • 10. 发明授权
    • Magnetic devices including amorphous alloys
    • 磁性器件包括非晶合金
    • US4187128A
    • 1980-02-05
    • US945914
    • 1978-09-26
    • Robert L. BillingsHo-Sou ChenErnst M. GyorgyRichard C. Sherwood
    • Robert L. BillingsHo-Sou ChenErnst M. GyorgyRichard C. Sherwood
    • C22C45/00H01F1/153H01F1/00
    • C22C45/008H01F1/153
    • The disclosed magnetic devices, including a magnetically coupled conducting path, incorporate amorphous, low magnetostriction alloys of the general formula (Co.sub.a Fe.sub.b T.sub.c).sub.i X.sub.j, the "metallic" constituents thereof being within the parenthetical expression. T, in the formulation, is selected from among Ni, Cr, Mn, V, Ti, Mo, W, Nb, Zr, Pd, Pt, Cu, Ag and Au, X being at least one "glass former" selected from among P, Si, B, C, As, Ge, Al, Ga, In, Sb, Bi and Sn. The "metallic" constituents comprise from 70-90 atomic percent of the alloy with cobalt being present in an amount of at least 70 atomic percent of the "metallic" constituents. The described material has been prepared by rapid cooling from the liquid, directly to the shape needed for fabrication of the device (e.g., tape to be wound to form an inductor core). When the amorphous material is heat treated for from 30 minutes to two hours at temperatures from 125 degrees Centigrade to 200 degrees Centigrade, it exhibits a temperature stabilized magnetic permeability. The fabrication of such devices as temperature stabilized inductors and transformers is contemplated.
    • 公开的包括磁耦合导电路径的磁性装置包括通式(CoaFebTc)iXj的无定形低磁致伸缩合金,其“金属”成分在括号表达式内。 所述配方中的T选自Ni,Cr,Mn,V,Ti,Mo,W,Nb,Zr,Pd,Pt,Cu,Ag和Au,X为至少一种选自 P,Si,B,C,As,Ge,Al,Ga,In,Sb,Bi和Sn。 “金属”成分占合金的70-90原子%,钴的含量以“金属”成分为至少70原子%。 所描述的材料已经通过从液体的快速冷却直接制造到器件的制造所需的形状(例如,待缠绕的带形成电感器芯)来制备。 当非晶材料在125摄氏度到200摄氏度的温度下热处理30分钟至2小时时,其表现出温度稳定的磁导率。 考虑了诸如温度稳定的电感器和变压器的这种装置的制造。