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    • 5. 发明授权
    • Instrument reference system
    • 仪器参考系统
    • US06771038B2
    • 2004-08-03
    • US10220119
    • 2002-11-12
    • David McIntyre Fyfe
    • David McIntyre Fyfe
    • G05B1940
    • G01D11/16G01R7/06G12B13/00Y10S116/06Y10S116/35
    • A method and system for calibrating a motor-driven instrument pointer (8) against a stop (5) without using feedback includes, in a first power state, driving the pointer (8) at full torque against the stop (5), then driving the pointer (8) against the stop at a reduced torque for a predetermined radial distance so at the pointer (8) is caused to be held against the stop (5). A third driving step, at reduced torque for a further predetermined radial distance, may be used in a second power state to move the pointer (8) against the stop (5).
    • 用于在不使用反馈的情况下校准马达驱动的仪表指针(8)抵靠止动件(5)的方法和系统包括:在第一功率状态下,以对所述止挡(5)的全转矩驱动所述指针(8),然后驱动 使得在指针(8)处以预定的径向距离以减小的转矩抵靠停止的指针(8)被保持抵靠止动件(5)。 可以在第二功率状态下以用于另外的预定径向距离的减小的扭矩的第三驱动步骤将指针(8)移动到止动件(5)上。
    • 6. 发明授权
    • Growth of P type Group III-V compound semiconductor on Group IV
semiconductor substrate
    • 在IV族半导体衬底上P型III-V族化合物半导体的生长
    • US5141893A
    • 1992-08-25
    • US658058
    • 1991-02-20
    • Chris R. ItoDavid McIntyreRobert KaliskiMilton Feng
    • Chris R. ItoDavid McIntyreRobert KaliskiMilton Feng
    • H01L21/20H01L21/82
    • H01L21/82H01L21/02395H01L21/02433H01L21/02463H01L21/02546H01L21/0262
    • `Unintentionally` doped P type GaAs is grown on silicon by a metal organic chemical vapor deposition process in which the molecular ratio of arsenic to gallium in the growth ambient is reduced to a value that is sufficiently low to cause the creation of donor (As) site vacancies in the grown GaAs layer, which become occupied by acceptor (carbon) atoms in the metal organic compound, thereby resulting in the formation of a buffer GaAs layer having a P type majority carrier characteristic. Preferably, the silicon substrate has its growth surface inclined from the [100] plane toward the [011] direction is initially subjected to an MOCVD process (e.g. trimethyl gallium, arsine chemical vapor deposition) at a reduced temperature (e.g. 425.degree. C.) and at atmospheric pressure, to form a thin (400 Angstroms) nucleation layer. During this growth step the Group V/Group III mole ratio (of arsenic to gallium) is maintained at an intermediate value. The temperature is then ramped to 630.degree. C. and gas content adjusted to reduce the V/III mole ratio to a value less than 5.0, so as to grow a buffer layer of GaAs is grown on the nucleation layer. Because the molecular ratio of arsenic to gallium in the metal organic/arsine ambient is at a substantially reduced value, the resulting GaAs buffer layer tends to be depleted of arsenic atoms at numerous crystal sites, which allows for the substitution of acceptor (carbon) atoms from the metal organic compound, so that the buffer GaAs layer is P type.
    • 通过金属有机化学气相沉积工艺在硅上生长“无意的”掺杂的P型GaAs,其中生长环境中砷与镓的分子比例降低到足够低的值,导致供体(As)的产生, 在金属有机化合物中被受体(碳)原子占据的生长的GaAs层中的位置空位,从而形成具有P型多数载流子特性的缓冲GaAs层。 优选地,硅衬底的其生长表面从[100]面朝向[011]方向倾斜,最初在降低的温度(例如425℃)下进行MOCVD工艺(例如三甲基镓,胂化学气相沉积) 并在大气压下形成薄(400埃)成核层。 在该生长步骤期间,V族/ III族摩尔比(砷与镓)保持在中间值。 然后将温度升至630℃,调节气体含量以将V / III摩尔比降低至小于5.0的值,以便在成核层上生长GaAs缓冲层。 因为在金属有机/砷酸环境中砷与镓的分子比值基本上是降低的值,所以得到的GaAs缓冲层倾向于耗尽多个晶体位置的砷原子,这允许取代受体(碳原子) 从金属有机化合物,使得缓冲GaAs层为P型。