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1. 发明授权

US5141893A Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate 失效
标题翻译：在IV族半导体衬底上P型III-V族化合物半导体的生长
公开(公告)号：US5141893A
公开(公告)日：1992-08-25
申请号：US658058
申请日：1991-02-20
申请人： Chris R. Ito , David McIntyre , Robert Kaliski , Milton Feng
发明人： Chris R. Ito , David McIntyre , Robert Kaliski , Milton Feng
IPC分类号： H01L21/20 , H01L21/82
CPC分类号： H01L21/82 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/0262
摘要： `Unintentionally` doped P type GaAs is grown on silicon by a metal organic chemical vapor deposition process in which the molecular ratio of arsenic to gallium in the growth ambient is reduced to a value that is sufficiently low to cause the creation of donor (As) site vacancies in the grown GaAs layer, which become occupied by acceptor (carbon) atoms in the metal organic compound, thereby resulting in the formation of a buffer GaAs layer having a P type majority carrier characteristic. Preferably, the silicon substrate has its growth surface inclined from the [100] plane toward the [011] direction is initially subjected to an MOCVD process (e.g. trimethyl gallium, arsine chemical vapor deposition) at a reduced temperature (e.g. 425.degree. C.) and at atmospheric pressure, to form a thin (400 Angstroms) nucleation layer. During this growth step the Group V/Group III mole ratio (of arsenic to gallium) is maintained at an intermediate value. The temperature is then ramped to 630.degree. C. and gas content adjusted to reduce the V/III mole ratio to a value less than 5.0, so as to grow a buffer layer of GaAs is grown on the nucleation layer. Because the molecular ratio of arsenic to gallium in the metal organic/arsine ambient is at a substantially reduced value, the resulting GaAs buffer layer tends to be depleted of arsenic atoms at numerous crystal sites, which allows for the substitution of acceptor (carbon) atoms from the metal organic compound, so that the buffer GaAs layer is P type.
摘要翻译：通过金属有机化学气相沉积工艺在硅上生长“无意的”掺杂的P型GaAs，其中生长环境中砷与镓的分子比例降低到足够低的值，导致供体（As）的产生，在金属有机化合物中被受体（碳）原子占据的生长的GaAs层中的位置空位，从而形成具有P型多数载流子特性的缓冲GaAs层。优选地，硅衬底的其生长表面从[100]面朝向[011]方向倾斜，最初在降低的温度（例如425℃）下进行MOCVD工艺（例如三甲基镓，胂化学气相沉积）并在大气压下形成薄（400埃）成核层。在该生长步骤期间，V族/ III族摩尔比（砷与镓）保持在中间值。然后将温度升至630℃，调节气体含量以将V / III摩尔比降低至小于5.0的值，以便在成核层上生长GaAs缓冲层。因为在金属有机/砷酸环境中砷与镓的分子比值基本上是降低的值，所以得到的GaAs缓冲层倾向于耗尽多个晶体位置的砷原子，这允许取代受体（碳原子）从金属有机化合物，使得缓冲GaAs层为P型。

2. 发明授权

US5141569A Growth of P type Group III-V compound semiconductor on Group IV semiconductor substrate 失效
公开(公告)号：US5141569A
公开(公告)日：1992-08-25
申请号：US505092
申请日：1990-04-04
申请人： Chris R. Ito , David McIntyre , Robert Kaliski , Milton Feng
发明人： Chris R. Ito , David McIntyre , Robert Kaliski , Milton Feng
IPC分类号： H01L21/20 , H01L21/82
CPC分类号： H01L21/82 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/0262 , Y10S148/022 , Y10S148/072 , Y10S148/097 , Y10S148/11
摘要： `Unintentionally` doped P type GaAs is grown on silicon by a metal organic chemical vapor deposition process in which the molecular ratio of arsenic to gallium in the growth ambient is reduced to a value that is sufficiently low to cause the creation of donor (As) site vacancies in the grown GaAs layer, which become occupied by acceptor (carbon) atoms in the metal organic compound, thereby resulting in the formation of a buffer GaAs layer having a P type majority carrier characteristic. Preferably, the silicon substrate has its growth surface inclined from the [100] plane toward the [011] direction is initially subjected to an MOCVD process (e.g. trimethyl gallium, arsine chemical vapor deposition) at a reduced temperature (e.g. 425.degree. C.) and at atmospheric pressure, to form a thin (400 Angstroms) nucleation layer. During this growth step the Group V/Group III mole ratio (of arsenic to gallium) is maintained at an intermediate value. The temperature is then ramped to 630.degree. C. and gas content adjusted to reduce the V/III mole ratio to a value less than 5.0, so as to grow a buffer layer of GaAs is grown on the nucleation layer. Because the molecular ratio of arsenic to gallium in the metal organic/arsine ambient is at a substantially reduced value, the resulting GaAs buffer layer tends to be depleted of arsenic atoms at numerous crystal sites, which allows for the substitution of acceptor (carbon) atoms from the metal organic compound, so that the buffer GaAs layer is P type.

3. 发明申请

US20120249009A1 High speed light emitting semiconductor methods and devices 审中-公开
标题翻译：高速发光半导体的方法和装置
公开(公告)号：US20120249009A1
公开(公告)日：2012-10-04
申请号：US13506626
申请日：2012-05-03
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, JR. , Han Wui Then , Chao-Hsin Wu
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, JR. , Han Wui Then , Chao-Hsin Wu
IPC分类号： H05B37/00 , H01L33/62 , H01L33/60
CPC分类号： H01S5/06203 , B82Y20/00 , H01L33/0016 , H01L33/30 , H01L33/38 , H01S5/06213 , H01S5/183 , H01S5/1835 , H01S5/34313
摘要： A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.
摘要翻译：一种方法，包括：提供晶体管结构，所述晶体管结构包括在半导体发射极和第二半导体类型的集电极区之间的第一半导体类型的基极区; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量的电信号，以在量子尺寸区域辅助下产生从基极区域输出的自发光发射，包括高频的输出自发光发射光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

4. 发明授权

US07998807B2 Method for increasing the speed of a light emitting biopolar transistor device 有权
标题翻译：提高发光生物极性晶体管器件速度的方法
公开(公告)号：US07998807B2
公开(公告)日：2011-08-16
申请号：US10861320
申请日：2004-06-04
申请人： Milton Feng , Nick Holonyak, Jr.
发明人： Milton Feng , Nick Holonyak, Jr.
IPC分类号： H01L21/8249
CPC分类号： H01L33/0016 , H01L29/0821 , H01L29/1004 , H01L29/155 , H01L29/205 , H01L29/66242 , H01L29/7371 , H01L33/08
摘要： A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
摘要翻译：一种提高双极晶体管速度的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且使基极区域适应于增强受激发射而不利于自发发射，从而降低基区的载流子复合寿命。

5. 发明申请

US20100202483A1 Two terminal light emitting and lasing devices and methods 有权
标题翻译：两端发光和激光装置及方法
公开(公告)号：US20100202483A1
公开(公告)日：2010-08-12
申请号：US12655806
申请日：2010-01-07
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, JR.
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, JR.
IPC分类号： H01S5/34 , H01L29/06
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/18311 , H01S5/3412 , H01S5/34313
摘要： A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
摘要翻译：一种用于从半导体结构产生发光的方法，包括以下步骤：提供半导体结构，其包括在第一导电类型的发射极区域和与第一导电类型的发射极区域相反的第二导电类型的基极区域之间的第一半导体结导电类型和在基极区域和漏极区域之间的第二半导体结; 在基区内提供显示量子尺寸效应的区域; 提供与发射极区域耦合的发射极; 提供与所述基极区域和所述漏极区域耦合的基极/漏极电极; 并且相对于发射极和基极/漏极施加信号以获得来自半导体结构的发光。

6. 发明申请

US20100085995A1 Transistor laser devices and methods 有权
标题翻译：晶体管激光器件及方法
公开(公告)号：US20100085995A1
公开(公告)日：2010-04-08
申请号：US12384772
申请日：2009-04-08
申请人： Milton Feng , Nick Holonyak,, JR. , Gabriel Walter , Han Wui Then
发明人： Milton Feng , Nick Holonyak,, JR. , Gabriel Walter , Han Wui Then
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
摘要翻译：一种用于从半导体器件产生发光的方法包括以下步骤：提供设置在半导体发射极区域和形成邻近基极区域的隧道结的半导体集电极区域之间的半导体基极区域; 在碱性区域中提供显示量子尺寸效应的区域; 提供分别与发射极区域，基极区域和集电极区域耦合的发射极端子，基极端子和集电极端子; 并且相对于发射极端子，基极端子和集电极端子施加电信号以产生从基极区域发出的光。

7. 发明申请

US20070001195A1 Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications 审中-公开
标题翻译：用于功率放大应用的双异质结双极晶体管的集电极层结构
公开(公告)号：US20070001195A1
公开(公告)日：2007-01-04
申请号：US11517792
申请日：2006-09-08
申请人： Shyh-Chiang Shen , David Caruth , Milton Feng
发明人： Shyh-Chiang Shen , David Caruth , Milton Feng
IPC分类号： H01L31/00
CPC分类号： H01L29/0821 , H01L29/7371
摘要： An indium phosphide based double hetero junction bipolar transistor with an increased collector-base breakdown voltage and a reduced operational knee voltage is provided by manipulating the conductivity in the collector region. The collector is formed using layers of different conductivities, with a region of the collector relatively close to the base being unintentionally or low doped. A voltage drop across the unintentionally doped region reduces the maximum value of the electric field and the velocity of carriers injected into the collector region at the base-collector junction. The conductivity throughout the collector region may be graded such that the highest conductivity occurs near the sub-collector and lowest conductivity occurs near the base region.
摘要翻译：通过控制集电极区域中的导电性，提供了具有增加的集电极 - 基极击穿电压和降低的操作拐点电压的基于磷化铟的双异质结双极晶体管。集电极使用不同电导率的层形成，集电极的区域相对靠近基极是无意的或低掺杂的。跨越无意掺杂区域的电压降降低了电场的最大值和在基极 - 集电极结处注入到集电极区域中的载流子的速度。整个集电极区域的电导率可以被分级，使得在亚极集电极附近发生最高的导电率，并且在基极区域附近出现最低的电导率。

8. 发明授权

US06998946B2 High cycle deflection beam MEMS devices 失效
标题翻译：高周期偏转光束MEMS器件
公开(公告)号：US06998946B2
公开(公告)日：2006-02-14
申请号：US10245790
申请日：2002-09-17
申请人： Milton Feng , Richard Chan
发明人： Milton Feng , Richard Chan
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2059/0072 , H01P1/127
摘要： A high life cycle MEMS device is provided by the invention. The inventors have recognized that the deflection beam or deflection beams of an MEMS shunt switch are a failure point in need of improvement. In an aspect of the invention, at least a portion of the signals in the grounded state of an MEMS shunt switch are bypassed to ground on a path that avoids the deflection beam(s) supporting the movable pad. In a preferred embodiment, ground posts are disposed to contact the movable pad in an actuated position and establish a signal path from a signal line to ground. The inventors have also recognized that a shape of deflection beams near their anchor point contributes to failures. In another preferred aspect of the invention, an anchoring portion of the deflection beam or deflection beams is generally coplanar with the remaining portion of the deflection beam(s). An additional post beneath the anchoring portion of the deflection beam(s) permits deflection beam(s) lacking any turns that form a weak structural point.
摘要翻译：本发明提供了高寿命的MEMS器件。本发明人认识到MEMS分流开关的偏转光束或偏转光束是需要改进的失效点。在本发明的一个方面中，在MEMS分流开关的接地状态下的至少一部分信号在路径上被旁路到地，以避免支撑可移动焊盘的偏转光束。在优选实施例中，接地柱设置成在致动位置接触可移动垫，并建立从信号线到地面的信号路径。本发明人还认识到，靠近它们的锚点的偏转束的形状有助于失效。在本发明的另一优选方面，偏转光束或偏转光束的锚固部分通常与偏转光束的剩余部分共面。在偏转光束的锚固部分下面的附加柱允许缺乏形成弱结构点的任何匝的偏转光束。

9. 发明授权

US6143997A Low actuation voltage microelectromechanical device and method of manufacture 失效
标题翻译：低致动电压微机电装置及其制造方法
公开(公告)号：US6143997A
公开(公告)日：2000-11-07
申请号：US326771
申请日：1999-06-04
申请人： Milton Feng , Shyh-Chiang Shen
发明人： Milton Feng , Shyh-Chiang Shen
IPC分类号： H01H59/00 , H01P1/12 , H01H57/00
CPC分类号： H01P1/12 , H01H59/0009 , H01H2001/0084 , Y10T29/49002 , Y10T29/49016 , Y10T29/49105
摘要： A method and apparatus for controlling the flow of signals by selectively switching signals to ground and allowing signals to pass through a signal line based a position of a conductive pad. The switch contains waveguides including the signal line and at least one ground plane. The conductive pad responds to an actuation voltage to electrically connect the signal line and the ground planes when the metal pad is located in a relaxed position. When not located in the relaxed position, the switch breaks the connection to allow signals to flow through the signal line unimpeded. Brackets guide the pad as the pad moves between the relaxed position and a stimulated position due to the actuation voltage, without substantially deforming the conductive pad.
摘要翻译：一种用于通过选择性地将信号切换到地面并且允许信号通过基于导电焊盘的位置的信号线来控制信号流动的方法和装置。该开关包括包括信号线和至少一个接地平面的波导。当金属垫位于松弛位置时，导电垫响应致动电压以电连接信号线和接地平面。当不位于松弛位置时，开关断开连接，使信号无阻碍地流过信号线。当垫片由于致动电压而在松弛位置和受刺激位置之间移动时，支架不引导衬垫，而基本不使导电垫变形。

10. 发明授权

US08509274B2 Light emitting and lasing semiconductor methods and devices 有权
标题翻译：发光和发光半导体的方法和装置
公开(公告)号：US08509274B2
公开(公告)日：2013-08-13
申请号：US12799080
申请日：2010-04-16
申请人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Chao-Hsin Wu
发明人： Gabriel Walter , Nick Holonyak, Jr. , Milton Feng , Chao-Hsin Wu
IPC分类号： H01S3/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0016 , H01L33/06 , H01L33/30 , H01S5/0425 , H01S5/06203 , H01S5/06213 , H01S5/18311 , H01S5/1835 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
摘要翻译：一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域，至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。

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