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1. 发明授权

US09520942B2 Millimeter-wave waveguide communication system 有权
标题翻译：毫米波导通信系统
公开(公告)号：US09520942B2
公开(公告)日：2016-12-13
申请号：US14379998
申请日：2012-02-24
申请人： Liqiang Cao , Qidong Wang , Daniel Guidotti
发明人： Liqiang Cao , Qidong Wang , Daniel Guidotti
IPC分类号： H04B10/12 , H04B10/25 , H04B10/90 , H05K1/02 , H04B10/00
CPC分类号： H04B10/2503 , H04B10/12 , H04B10/90 , H05K1/0218 , H05K1/0239 , H05K2201/037 , H05K2201/0715 , H05K2201/10098
摘要： The present disclosure provides a millimeter-wave waveguide communication system. The millimeter-wave waveguide communication system may comprise: a clock component, and at least two sets of millimeter-wave receiving/transmitting channels. The clock component is configured to provide a clock signal to sending ends and receiving ends of the two sets of millimeter-wave receiving/sending channels respectively. Each set of millimeter-wave receiving/sending channels comprises: a transmitter component, a receiver component and a transmission waveguide. The transmission waveguide is located between the transmitter component and the receiver component and is configured to provide a channel for millimeter-wave transmission. The top face, side face and/or bottom face of the transmission waveguide, except for active devices and accessories thereof, are plated with a metal conductive wall to form an electromagnetic shield from a transmission waveguide in an adjacent millimeter-wave receiving/sending channel. The metal conductive wall can minimize the crosstalk between the channels during high-speed communications, thereby improving data bandwidth and data throughput of the millimeter-wave communication system.
摘要翻译：本公开提供了一种毫米波波导通信系统。毫米波波导通信系统可以包括：时钟分量和至少两组毫米波接收/发送信道。时钟分量被配置为提供时钟信号以分别发送两组毫米波接收/发送信道的端点和接收端。每组毫米波接收/发送通道包括：发射器部件，接收器部件和传输波导。传输波导位于发射器部件和接收器部件之间，并且被配置为提供用于毫米波传输的通道。除了有源器件及其附件之外，传输波导的顶面，侧面和/或底面镀有金属导电壁，以在相邻毫米波接收/发送通道中的传输波导形成电磁屏蔽。金属导电壁可以在高速通信期间最小化通道之间的串扰，从而提高毫米波通信系统的数据带宽和数据吞吐量。

2. 发明授权

US06236196B1 Thermal modulation system and method for locating a circuit defect such as a short or incipient open independent of a circuit geometry 失效
标题翻译：用于定位电路缺陷的热调制系统和方法，例如短路或初始开路，独立于电路几何形状
公开(公告)号：US06236196B1
公开(公告)日：2001-05-22
申请号：US09325472
申请日：1999-06-03
申请人： Daniel Guidotti , Arnold Halperin , Michael E. Scaman , Arthur R. Zingher
发明人： Daniel Guidotti , Arnold Halperin , Michael E. Scaman , Arthur R. Zingher
IPC分类号： G01R3102
CPC分类号： G01R31/02 , G01R31/086
摘要： A system and method for locating a circuit defect, such as a short or an incipient open, in an electric circuit in a workpiece, such a Printed Circuit Board (PCB) or MultiChip Module (MCM). The circuit is connected to a device for sensitively measuring any resistance change. A thermal stimulus is applied to various subsets of the surface of the workpiece, the thermal stimulus being temporally modulated, and the resistance change measurement correlated with this modulation. By applying well-designed thermal stimulus subsets, resistance measurements may be logically combined which correspond to the plural thermal stimulus subsets. Further, the search region where the defect may be located may be iteratively refined. By measuring the time delay between the thermal stimulus and corresponding resistance change, the depth of a defect below the surface of the workpiece is further determined. Thus the system and method efficiently and accurately locates a defect in three dimensions, even if the workpiece is large, and the defect is small and underneath the surface.
摘要翻译：用于在诸如印刷电路板（PCB）或多芯片模块（MCM）的工件的电路中定位电路缺陷（例如短路或初始开路）的系统和方法。该电路连接到用于敏感测量任何电阻变化的器件。热刺激被施加到工件表面的各种子集，热刺激被时间调制，并且电阻变化测量与该调制相关。通过应用精心设计的热刺激子集，可以在逻辑上组合对应于多个热刺激子集的电阻测量。此外，可以迭代地改进可能位于缺陷处的搜索区域。通过测量热刺激和相应的电阻变化之间的时间延迟，进一步确定了工件表面下方缺陷的深度。因此，即使工件大，缺陷小，表面下方，系统和方法也能有效准确地定位三维缺陷。

3. 发明申请

US20060269288A1 High density optical harness 审中-公开
标题翻译：高密度光学线束
公开(公告)号：US20060269288A1
公开(公告)日：2006-11-30
申请号：US11439091
申请日：2006-05-23
申请人： Daniel Guidotti , Gee-Kung Chang
发明人： Daniel Guidotti , Gee-Kung Chang
IPC分类号： H04B10/00
CPC分类号： G02B6/4214 , G02B6/4249 , G02B6/43
摘要： A flexible optical harness containing lasers and photodetectors that are pre-aligned to light conduits may be provided. Light may be transmitted through an optical conduit comprising a core region surrounded by a cladding region. The coupling between optical conduits and emitting laser and receiving photodetector occurs via an interface between each designated optical conduit and between each photodetector and each designated optical conduit. A detector's active area forms an interface with the designated light conduit's core. The laser's emission area forms an interface with the designated light conduit's core. The said optical harness may, in addition, be combined with a flexible conducting harness between common blocks.
摘要翻译：可以提供包含与光导管预对准的激光器和光电检测器的柔性光学线束。光可以通过包括由包层区域包围的芯区域的光导管透射。光导管与发射激光器和接收光电检测器之间的耦合通过每个指定的光导管之间的接口和每个光电检测器与每个指定的光导管之间的界面进行。检测器的活动区域与指定的光导管的核心形成界面。激光器的发射区域与指定的光导管核心形成界面。另外，所述光学线束可以与公共块之间的柔性导电线束组合。

4. 发明申请

US20050037608A1 Deep filled vias 有权
标题翻译：深填充的通孔
公开(公告)号：US20050037608A1
公开(公告)日：2005-02-17
申请号：US10639989
申请日：2003-08-13
申请人： Panayotis Andricacos , Emanuel Cooper , Timothy Dalton , Hariklia Deligianni , Daniel Guidotti , Keith Kwietniak , Michelle Steen , Cornelia Tsang
发明人： Panayotis Andricacos , Emanuel Cooper , Timothy Dalton , Hariklia Deligianni , Daniel Guidotti , Keith Kwietniak , Michelle Steen , Cornelia Tsang
IPC分类号： H01L21/288 , H01L21/3065 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/2885 , H01L21/30655 , H01L21/76898
摘要： Flared and non-flared metallized deep vias having aspect ratios of about 2 or greater are provided. Blind vias have been fabricated in silicon substrates up to a depth of about 300 microns, and flared through vias have been fabricated up to about 750 microns, the approximate thickness of a silicon substrate wafer, enabling the formation of electrical connections at either or both ends of a via. In spite of the depth and high aspect ratios attainable, the etched vias are completely filled with plated copper conductor, completing the formation of deep vias and allowing fuller use of both sides of the substrate.
摘要翻译：提供具有约2或更大的纵横比的扩张和未扩口的金属化深通孔。盲孔已经在硅衬底中制造达到约300微米的深度，并且通过通孔已经被制造高达约750微米，硅衬底晶片的大致厚度，使得能够在两端或两端形成电连接的通道。尽管可以获得深度和高纵横比，但是蚀刻的通孔完全被电镀铜导体填充，从而形成深通孔并允许更充分地使用基板的两侧。

5. 发明授权

US06400128B2 Thermal modulation system and method for locating a circuit defect 失效
标题翻译：用于定位电路缺陷的热调制系统和方法
公开(公告)号：US06400128B2
公开(公告)日：2002-06-04
申请号：US09811884
申请日：2001-03-19
申请人： Daniel Guidotti , Arnold Halperin , Michael E. Scaman , Arthur R. Zingher
发明人： Daniel Guidotti , Arnold Halperin , Michael E. Scaman , Arthur R. Zingher
IPC分类号： G01R3102
CPC分类号： G01R31/02 , G01R31/086
摘要： A system and method for locating a circuit defect, such as a short or an incipient open, in an electric circuit in a workpiece, such a Printed Circuit Board (PCB) or MultiChip Module (MCM). The circuit is connected to a device for sensitively measuring any resistance change. A thermal stimulus is applied to various subsets of the surface of the workpiece, the thermal stimulus being temporally modulated, and the resistance change measurement correlated with this modulation. By applying well-designed thermal stimulus subsets, resistance measurements may be logically combined which correspond to the plural thermal stimulus subsets. Further, the search region where the defect may be located may be iteratively refined. By measuring the time delay between the thermal stimulus and corresponding resistance change, the depth of a defect below the surface of the workpiece is further determined. Thus the system and method efficiently and accurately locates a defect in three dimensions, even if the workpiece is large, and the defect is small and underneath the surface.
摘要翻译：用于在诸如印刷电路板（PCB）或多芯片模块（MCM）的工件的电路中定位电路缺陷（例如短路或初始开路）的系统和方法。该电路连接到用于敏感测量任何电阻变化的器件。热刺激被施加到工件表面的各种子集，热刺激被时间调制，并且电阻变化测量与该调制相关。通过应用精心设计的热刺激子集，可以在逻辑上组合对应于多个热刺激子集的电阻测量。此外，可以迭代地改进可能位于缺陷处的搜索区域。通过测量热刺激和相应的电阻变化之间的时间延迟，进一步确定了工件表面下方缺陷的深度。因此，即使工件大，缺陷小，表面下方，系统和方法也能有效准确地定位三维缺陷。

6. 发明授权

US06281479B1 Continual flow rapid thermal processing apparatus and method 有权
公开(公告)号：US06281479B1
公开(公告)日：2001-08-28
申请号：US09614025
申请日：2000-07-11
申请人： Daniel Guidotti , Kam Leung Lee
发明人： Daniel Guidotti , Kam Leung Lee
IPC分类号： F27B514
CPC分类号： H01L21/67109 , H01L21/67745
摘要： A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.

7. 发明授权

US6114662A Continual flow rapid thermal processing apparatus and method 失效
标题翻译：持续流动快速热处理装置及方法
公开(公告)号：US6114662A
公开(公告)日：2000-09-05
申请号：US870355
申请日：1997-06-05
申请人： Daniel Guidotti , Kam Leung Lee
发明人： Daniel Guidotti , Kam Leung Lee
IPC分类号： H01L21/00 , H01L21/677 , F27N9/06 , F26B19/00
CPC分类号： H01L21/67109 , H01L21/67745
摘要： A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.
摘要翻译：一种快速热处理装置和使用这种装置对至少一个工件进行连续热处理的方法，该装置包括大致细长形状的空腔，由腔内的内壁限定的处理室，用于输送调节的装置以及从所述室中提取工艺气体，用于沿基本向前的方向输送至少一个工件通过所述室的装置，用于加热所述室的至少一部分的装置，以及用于冷却所述至少一个工件加热装置。用于装置的空腔也可以以弯曲或线性构造提供，以实现本发明的方法。

8. 发明授权

US07482667B2 Edge viewing photodetecter 有权
标题翻译：边缘观察光电探测器
公开(公告)号：US07482667B2
公开(公告)日：2009-01-27
申请号：US11359793
申请日：2006-02-22
申请人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dean Dupuis
发明人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dean Dupuis
IPC分类号： H01L31/00
CPC分类号： H01L31/105 , G02B6/4202 , G02B6/4203 , H01L31/02161 , H01L31/02327 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be received at the edge viewing semiconductor photodetector having an active area. The active area may be substantially contained within a first plane. The edge viewing semiconductor photodetector may further have conducting contact pads connected to the active area. The contact pads may be substantially contained within plural planes. The first plane may have its normal direction substantially inclined with respect to a normal direction of the plural planes. The first plane may further have its normal direction substantially inclined with respect to a direction of the received light incident to the active area. Next, a signal may be received from the pads. The signal may correspond to the transmitted light.
摘要翻译：可以提供边缘观看半导体光电探测器。光可以通过包括由包层区域包围的芯区域的光纤导管透射。可以在具有有源区域的边缘观看半导体光电检测器处接收光。有源区域可以基本上包含在第一平面内。边缘观察半导体光电检测器还可以具有连接到有源区的导电接触焊盘。接触垫可以基本上包含在多个平面内。第一平面可以具有相对于多个平面的法线方向大致倾斜的法线方向。第一平面可以进一步具有相对于入射到有源区域的接收光的方向基本上倾斜的法线方向。接下来，可以从焊盘接收信号。信号可以对应于透射光。

9. 发明申请

US20060186503A1 Edge viewing photodetector 有权
标题翻译：边缘观察光电探测器
公开(公告)号：US20060186503A1
公开(公告)日：2006-08-24
申请号：US11359793
申请日：2006-02-22
申请人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dupuis
发明人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dupuis
IPC分类号： H01L31/105
CPC分类号： H01L31/105 , G02B6/4202 , G02B6/4203 , H01L31/02161 , H01L31/02327 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be received at the edge viewing semiconductor photodetector having an active area. The active area may be substantially contained within a first plane. The edge viewing semiconductor photodetector may further have conducting contact pads connected to the active area. The contact pads may be substantially contained within plural planes. The first plane may have its normal direction substantially inclined with respect to a normal direction of the plural planes. The first plane may further have its normal direction substantially inclined with respect to a direction of the received light incident to the active area. Next, a signal may be received from the pads. The signal may correspond to the transmitted light.
摘要翻译：可以提供边缘观看半导体光电探测器。光可以通过包括由包层区域包围的芯区域的光纤导管透射。可以在具有有源区域的边缘观看半导体光电检测器处接收光。有源区域可以基本上包含在第一平面内。边缘观察半导体光电检测器还可以具有连接到有源区的导电接触焊盘。接触垫可以基本上包含在多个平面内。第一平面可以具有相对于多个平面的法线方向大致倾斜的法线方向。第一平面可以进一步具有相对于入射到有源区域的接收光的方向基本上倾斜的法线方向。接下来，可以从焊盘接收信号。信号可以对应于透射光。

10. 发明授权

US07060624B2 Deep filled vias 有权
标题翻译：深填充的通孔
公开(公告)号：US07060624B2
公开(公告)日：2006-06-13
申请号：US10639989
申请日：2003-08-13
申请人： Panayotis Andricacos , Emanuel Israel Cooper , Timothy Joseph Dalton , Hariklia Deligianni , Daniel Guidotti , Keith Thomas Kwietniak , Michelle Leigh Steen , Cornelia Kang-I Tsang
发明人： Panayotis Andricacos , Emanuel Israel Cooper , Timothy Joseph Dalton , Hariklia Deligianni , Daniel Guidotti , Keith Thomas Kwietniak , Michelle Leigh Steen , Cornelia Kang-I Tsang
IPC分类号： H01L21/311
CPC分类号： H01L21/2885 , H01L21/30655 , H01L21/76898
摘要： Flared and non-flared metallized deep vias having aspect ratios of about 2 or greater are provided. Blind vias have been fabricated in silicon substrates up to a depth of about 300 microns, and flared through vias have been fabricated up to about 750 microns, the approximate thickness of a silicon substrate wafer, enabling the formation of electrical connections at either or both ends of a via.In spite of the depth and high aspect ratios attainable, the etched vias are completely filled with plated copper conductor, completing the formation of deep vias and allowing fuller use of both sides of the substrate.
摘要翻译：提供具有约2或更大的纵横比的扩张和未扩口的金属化深通孔。盲孔已经在硅衬底中制造达到约300微米的深度，并且通过通孔已经被制造高达约750微米，硅衬底晶片的大致厚度，使得能够在两端或两端形成电连接的通道。尽管可以获得深度和高纵横比，但是蚀刻的通孔完全被电镀铜导体填充，从而形成深通孔并允许更充分地使用基板的两侧。

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