专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07482667B2 Edge viewing photodetecter 有权
标题翻译：边缘观察光电探测器
公开(公告)号：US07482667B2
公开(公告)日：2009-01-27
申请号：US11359793
申请日：2006-02-22
申请人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dean Dupuis
发明人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dean Dupuis
IPC分类号： H01L31/00
CPC分类号： H01L31/105 , G02B6/4202 , G02B6/4203 , H01L31/02161 , H01L31/02327 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be received at the edge viewing semiconductor photodetector having an active area. The active area may be substantially contained within a first plane. The edge viewing semiconductor photodetector may further have conducting contact pads connected to the active area. The contact pads may be substantially contained within plural planes. The first plane may have its normal direction substantially inclined with respect to a normal direction of the plural planes. The first plane may further have its normal direction substantially inclined with respect to a direction of the received light incident to the active area. Next, a signal may be received from the pads. The signal may correspond to the transmitted light.
摘要翻译：可以提供边缘观看半导体光电探测器。光可以通过包括由包层区域包围的芯区域的光纤导管透射。可以在具有有源区域的边缘观看半导体光电检测器处接收光。有源区域可以基本上包含在第一平面内。边缘观察半导体光电检测器还可以具有连接到有源区的导电接触焊盘。接触垫可以基本上包含在多个平面内。第一平面可以具有相对于多个平面的法线方向大致倾斜的法线方向。第一平面可以进一步具有相对于入射到有源区域的接收光的方向基本上倾斜的法线方向。接下来，可以从焊盘接收信号。信号可以对应于透射光。

2. 发明申请

US20060186503A1 Edge viewing photodetector 有权
标题翻译：边缘观察光电探测器
公开(公告)号：US20060186503A1
公开(公告)日：2006-08-24
申请号：US11359793
申请日：2006-02-22
申请人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dupuis
发明人： Daniel Guidotti , Gee-Kung Chang , Jae-Hyun Ryou , Russell Dupuis
IPC分类号： H01L31/105
CPC分类号： H01L31/105 , G02B6/4202 , G02B6/4203 , H01L31/02161 , H01L31/02327 , H01L31/035281 , H01L31/0392 , Y02E10/50
摘要： An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be received at the edge viewing semiconductor photodetector having an active area. The active area may be substantially contained within a first plane. The edge viewing semiconductor photodetector may further have conducting contact pads connected to the active area. The contact pads may be substantially contained within plural planes. The first plane may have its normal direction substantially inclined with respect to a normal direction of the plural planes. The first plane may further have its normal direction substantially inclined with respect to a direction of the received light incident to the active area. Next, a signal may be received from the pads. The signal may correspond to the transmitted light.
摘要翻译：可以提供边缘观看半导体光电探测器。光可以通过包括由包层区域包围的芯区域的光纤导管透射。可以在具有有源区域的边缘观看半导体光电检测器处接收光。有源区域可以基本上包含在第一平面内。边缘观察半导体光电检测器还可以具有连接到有源区的导电接触焊盘。接触垫可以基本上包含在多个平面内。第一平面可以具有相对于多个平面的法线方向大致倾斜的法线方向。第一平面可以进一步具有相对于入射到有源区域的接收光的方向基本上倾斜的法线方向。接下来，可以从焊盘接收信号。信号可以对应于透射光。

3. 发明授权

US07286584B2 Carrier bonded 1550 nm VCSEL with InP substrate removal 失效
标题翻译：载体键合1550nm VCSEL，其中去除了InP衬底
公开(公告)号：US07286584B2
公开(公告)日：2007-10-23
申请号：US11007081
申请日：2004-12-08
申请人： Tzu-Yu Wang , Jin K. Kim , Hoki Kwon , Gyoungwon Park , Jae-Hyun Ryou
发明人： Tzu-Yu Wang , Jin K. Kim , Hoki Kwon , Gyoungwon Park , Jae-Hyun Ryou
IPC分类号： H01S5/00
CPC分类号： H01S5/18377 , H01S5/18341 , H01S5/18375
摘要： A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the VCSEL structure.
摘要翻译：垂直腔表面发射激光器（VCSEL）结构包括布置在衬底上的底部分布布拉格反射器（DBR）; 插入在底部DBR和基板之间的金属层，其中金属层和底部DBR形成复合反射镜结构。可以在金属层和底部DBR之间插入图案化的介电层，以减少金属层和底部DBR之间的有害的化学反应。金属层直接接触底部DBR的一部分以增强VCSEL结构的电导率和导热性。

4. 发明授权

US07054345B2 Enhanced lateral oxidation 有权
标题翻译：增强侧向氧化
公开(公告)号：US07054345B2
公开(公告)日：2006-05-30
申请号：US10607887
申请日：2003-06-27
申请人： Jae-Hyun Ryou , Tzu-Yu Wang , Jin K. Kim , Gyoungwon Park , Hoki Kwon
发明人： Jae-Hyun Ryou , Tzu-Yu Wang , Jin K. Kim , Gyoungwon Park , Hoki Kwon
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/18372 , H01S5/2063 , H01S5/34313 , H01S5/34366
摘要： A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.
摘要翻译：一种垂直腔面发射激光器，其具有被增强的侧向氧化氧化的可氧化层。氧化可以包括在氧化环境中和/或待氧化的层中加入流体形式的氧气，其中有或没有其它流体，例如水蒸汽。该氧化方法可用于具有相对低的铝含量的层，例如基于InP的结构，或者具有高的铝含量，例如在GaAs基结构中。

5. 发明授权

US07858417B2 Dielectric VCSEL gain guide 有权
标题翻译：介质VCSEL增益指南
公开(公告)号：US07858417B2
公开(公告)日：2010-12-28
申请号：US11866297
申请日：2007-10-02
申请人： Jae-Hyun Ryou , Gyoungwon Park
发明人： Jae-Hyun Ryou , Gyoungwon Park
IPC分类号： H01L21/00
CPC分类号： H01S5/18308 , H01S5/0282 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/2004
摘要： A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.
摘要翻译：具有介电增益导向器的垂直腔表面发射激光器。增益指南可以提供电流限制，器件隔离和可能的光学限制。可以生长第一镜和活性区。图案可以放置在活动区域上或附近。可以在图案上沉积电介质材料，并且可以去除图案，从而产生增益引导件。然后可以在增益指南上生长顶镜。具有介电增益引导件的该结构可具有特定特征和/或附加特征。

6. 发明授权

US07277461B2 Dielectric VCSEL gain guide 失效
标题翻译：介质VCSEL增益指南
公开(公告)号：US07277461B2
公开(公告)日：2007-10-02
申请号：US10607629
申请日：2003-06-27
申请人： Jae-Hyun Ryou , Gyoungwon Park
发明人： Jae-Hyun Ryou , Gyoungwon Park
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0282 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/2004
摘要： A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.
摘要翻译：具有介电增益导向器的垂直腔表面发射激光器。增益指南可以提供电流限制，器件隔离和可能的光学限制。可以生长第一镜和活性区。图案可以放置在活动区域上或附近。可以在图案上沉积电介质材料，并且可以去除图案，从而产生增益引导件。然后可以在增益指南上生长顶镜。具有介电增益引导件的该结构可具有特定特征和/或附加特征。

7. 发明申请

US20080020553A1 DIELECTRIC VCSEL GAIN GUIDE 有权
标题翻译：电介质VCSEL增益指南
公开(公告)号：US20080020553A1
公开(公告)日：2008-01-24
申请号：US11866297
申请日：2007-10-02
申请人： Jae-Hyun Ryou , Gyoungwon Park
发明人： Jae-Hyun Ryou , Gyoungwon Park
IPC分类号： H01L21/20
CPC分类号： H01S5/18308 , H01S5/0282 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/2004
摘要： A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the active region. A dielectric material may be deposited on the pattern and the pattern may be removed resulting in a gain guide. Then a top mirror may be grown on the gain guide. This structure with the dielectric gain guide may have specific characteristics and/or additional features.
摘要翻译：具有介电增益导向器的垂直腔表面发射激光器。增益指南可以提供电流限制，器件隔离和可能的光学限制。可以生长第一镜和活性区。图案可以放置在活动区域上或附近。可以在图案上沉积电介质材料，并且可以去除图案，从而产生增益引导件。然后可以在增益指南上生长顶镜。具有介电增益引导件的该结构可具有特定特征和/或附加特征。

8. 发明授权

US07075962B2 VCSEL having thermal management 有权
标题翻译： VCSEL具有热管理功能
公开(公告)号：US07075962B2
公开(公告)日：2006-07-11
申请号：US10607758
申请日：2003-06-27
申请人： Jae-Hyun Ryou , Michael D. Ringle , Yue Liu
发明人： Jae-Hyun Ryou , Michael D. Ringle , Yue Liu
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/02461 , H01S5/0282 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S2301/176
摘要： A VCSEL structure having thermal management. The structure may be designed for conveyance of heat from the active layer primarily through one of the mirrors to a material that removes heat externally away from the structure. Thermal management may involve various configurations of heat removal for various VCSEL structures. The structures may be designed to effect such respective configurations for heat removal.
摘要翻译：具有热管理的VCSEL结构。该结构可以被设计用于将主要通过其中一个反射镜的活性层的热量输送到从外部远离结构的热量的材料。热管理可能涉及各种VCSEL结构的散热的各种配置。可以将结构设计成实现用于散热的各种配置。

9. 发明申请

US20050243881A1 InAlAs having enhanced oxidation rate grown under very low V/III ratio 审中-公开
标题翻译： InAlAs具有在非常低的V / III比下生长的增强的氧化速率
公开(公告)号：US20050243881A1
公开(公告)日：2005-11-03
申请号：US11026397
申请日：2004-12-30
申请人： Hoki Kwon , Tzu-Yu Wang , Jae-Hyun Ryou , Jin Kim , Gyoungwon Park
发明人： Hoki Kwon , Tzu-Yu Wang , Jae-Hyun Ryou , Jin Kim , Gyoungwon Park
IPC分类号： H01S5/00 , H01S5/183 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/18358 , H01S5/34306 , H01S5/3434 , H01S2301/166 , H01S2304/04
摘要： A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed.
摘要翻译：通过调节在沉积室内引入的含In，Al和As的前体的流速来形成VCSEL的电流限制层。通过保持含砷前体的流速与含In和Al的前体的总流速（例如，小于25,10,5或1）之间的低比例，电流限制层，晶格匹配至InP并具有增强的氧化速率。

10. 发明授权

US07433381B2 InP based long wavelength VCSEL 失效
标题翻译：基于InP的长波长VCSEL
公开(公告)号：US07433381B2
公开(公告)日：2008-10-07
申请号：US10606104
申请日：2003-06-25
申请人： Tzu-Yu Wang , Hoki Kwon , Jae-Hyun Ryou , Gyoungwon Park , Jin K. Kim
发明人： Tzu-Yu Wang , Hoki Kwon , Jae-Hyun Ryou , Gyoungwon Park , Jin K. Kim
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18341 , H01S5/18372 , H01S5/2063 , H01S5/34313
摘要： A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.
摘要翻译：具有衬底的长波长垂直腔表面发射激光器，位于衬底上的第一反射镜，位于第一反射镜上的有源区，位于有源区上的第二反射镜。第一反射镜可以具有几对层，其中一对或多对该反射镜具有氧化层。衬底可以包括InP，并且镜组件可以与InP兼容。第一反射镜中的一个或多个层可以通过沟槽状方法或其它布置被氧化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式