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1. 发明授权

US08450786B2 Semiconductor devices including buried gate electrodes 有权
标题翻译：包括掩埋栅电极的半导体器件
公开(公告)号：US08450786B2
公开(公告)日：2013-05-28
申请号：US13241716
申请日：2011-09-23
申请人： Dae-Ik Kim , Yong-Il Kim
发明人： Dae-Ik Kim , Yong-Il Kim
IPC分类号： H01L27/108
CPC分类号： H01L27/088 , H01L21/82345 , H01L21/823456 , H01L21/823462 , H01L27/105 , H01L27/1052 , H01L27/10876 , H01L27/10894 , H01L29/4236 , H01L29/66621
摘要： A semiconductor device capable of reducing a thickness, an electronic product employing the same, and a method of fabricating the same are provided. The method of fabricating a semiconductor device includes preparing a semiconductor substrate having first and second active regions. A first transistor in the first active region includes a first gate pattern and first impurity regions. A second transistor the second active region includes a second gate pattern and second impurity regions. A first conductive pattern is on the first transistor, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern. The first conductive pattern may be formed on the first transistor while the second transistor is formed.
摘要翻译：提供了能够减小厚度的半导体器件，采用该半导体器件的电子产品及其制造方法。制造半导体器件的方法包括制备具有第一和第二有源区的半导体衬底。第一有源区中的第一晶体管包括第一栅极图案和第一杂质区域。第二晶体管，第二有源区包括第二栅极图案和第二杂质区域。第一导电图案在第一晶体管上，其中第一导电图案的至少一部分设置在与半导体衬底的上表面相同的距离处，作为第二栅极图案的至少一部分。第一导电图案可以形成在第一晶体管上，而形成第二晶体管。

2. 发明授权

US08344517B2 Integrated circuit devices including air spacers separating conductive structures and contact plugs and methods of fabricating the same 有权
标题翻译：集成电路装置包括分隔导电结构和接触插塞的气垫片及其制造方法
公开(公告)号：US08344517B2
公开(公告)日：2013-01-01
申请号：US13469434
申请日：2012-05-11
申请人： Dae-Ik Kim , Je-Min Park , Chang-Suk Hyun
发明人： Dae-Ik Kim , Je-Min Park , Chang-Suk Hyun
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76834 , H01L23/5222 , H01L27/10814 , H01L27/10855 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device includes first and second conductive structures spaced apart from one another on a substrate along a first direction. The first and second conductive structures extend in a second direction substantially perpendicular to the first direction. A contact plug is interposed between the first and second conductive structures and is separated therefrom along the first direction by respective air gaps on opposite sides of the contact plug. The air gaps define first and second air spacers that electrically insulate the contact plug from the first and second conductive structures, respectively. An upper insulation layer covers the first and second air spacers and the first and second conductive structures. The air spacers may sufficiently reduce the loading capacitance between the conductive structures. Related fabrication methods are also discussed.
摘要翻译：集成电路器件包括沿着第一方向在衬底上彼此间隔开的第一和第二导电结构。第一和第二导电结构在基本上垂直于第一方向的第二方向上延伸。接触塞被插入在第一和第二导电结构之间，并且通过接触插塞的相对侧上的相应气隙沿第一方向与其分离。气隙限定分别使接触塞与第一和第二导电结构电绝缘的第一和第二空气间隔件。上绝缘层覆盖第一和第二空气间隔件以及第一和第二导电结构。空气间隔件可以充分降低导电结构之间的负载电容。还讨论了相关的制造方法。

3. 发明申请

US20120099504A1 SYSTEM FOR PROVIDING EMBMS CHATTING SERVICE AND SERVICE PROVIDER SERVER OF THE SAME, AND METHOD FOR CONTROLLING eBM-SC AND USER EQUIPMENT 失效
标题翻译：用于提供EMBMS服务和服务提供者服务器的系统以及用于控制eBM-SC和用户设备的方法
公开(公告)号：US20120099504A1
公开(公告)日：2012-04-26
申请号：US13242948
申请日：2011-09-23
申请人： Eun Hee HYUN , Hochoong CHO , Jung Mo MOON , Dae Ik KIM , Mi Young YUN , Sang Ho LEE
发明人： Eun Hee HYUN , Hochoong CHO , Jung Mo MOON , Dae Ik KIM , Mi Young YUN , Sang Ho LEE
IPC分类号： H04W92/00 , H04W72/04 , H04H20/71
CPC分类号： H04W4/12 , H04L12/1818 , H04L12/185 , H04L12/189 , H04W4/06 , H04W72/005 , H04W76/40
摘要： Disclosed is a system for providing an Evolved Multimedia Broadcast/Multicast Service (EMBMS) chatting service for providing a multi-chatting service. The system comprises at least one of a User Equipment (UE) to request establishment of a chatting channel and to transmit and receive a communication message and contents so as to transmit and receive the communication message with a plurality of mobile subscribers participated in the chatting channel, an evolved Broadcast Multicast-Service Center (eBM-SC) to perform control of an EMBMS service so as to transmit the communication message to the at least one of the UE using the EMBMS service, and a service provider server to transmit, to the eBM-SC, user service information, first bearer service information, and contents for each of the chatting channels, so that the UE transmits and receives the communication message with the plurality of the mobile subscribers participated in the chatting channel.
摘要翻译：公开了一种用于提供演进多媒体广播/组播服务（EMBMS）聊天服务以提供多聊天服务的系统。该系统包括用户设备（UE）中的至少一个，用于请求建立聊天频道并发送和接收通信消息和内容，以便与参与聊天频道的多个移动用户发送和接收通信消息，演进的广播多播服务中心（eBM-SC），用于执行EMBMS服务的控制，以便使用EMBMS服务将通信消息发送到UE的至少一个，以及服务提供商服务器向 eBM-SC，用户服务信息，第一承载服务信息和每个聊天频道的内容，使得UE与参与聊天频道的多个移动用户发送和接收通信消息。

4. 发明申请

US20110149827A1 BASE STATION, MOBILE STATION, AND METHOD FOR PROVIDING SERVICE CONTINUITY BETWEEN MBMS AREAS IN MOBILE TELECOMMUNICATION SYSTEM 审中-公开
标题翻译：移动通信系统中的MBMS区域之间的基站，移动站和提供服务连续性的方法
公开(公告)号：US20110149827A1
公开(公告)日：2011-06-23
申请号：US12973379
申请日：2010-12-20
申请人： JeeHyeon NA , Dae Ik KIM , Sang Ho LEE
发明人： JeeHyeon NA , Dae Ik KIM , Sang Ho LEE
IPC分类号： H04W4/06
CPC分类号： H04L12/189 , H04W72/005
摘要： Provided are a base station, a mobile station, and a method for providing service continuity between Multimedia Broadcast and Multicast Service (MBMS) areas. A system information generation unit of the base station may generate a System Information Block (SIB) including broadcasting area information providing a broadcasting service to a neighboring cell of a serving cell where the mobile station is located. A communication unit may transmit the generated SIB to the mobile station.
摘要翻译：提供了一种在多媒体广播和组播服务（MBMS）区域之间提供服务连续性的基站，移动台和方法。基站的系统信息生成单元可以生成包括向移动站所在的服务小区的相邻小区提供广播服务的广播区域信息的系统信息块（SIB）。通信单元可以将生成的SIB发送到移动台。

5. 发明申请

US20100248469A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100248469A1
公开(公告)日：2010-09-30
申请号：US12813017
申请日：2010-06-10
申请人： Dae-ik Kim
发明人： Dae-ik Kim
IPC分类号： H01L21/768
CPC分类号： H01L27/0207 , H01L21/76804 , H01L21/76885 , H01L21/76895 , H01L21/76897 , H01L27/10855 , H01L27/10888
摘要： A semiconductor device and method of fabricating the same reduce the likelihood of the occurrence of electrical defects. The device includes a first interlayer insulating film on a semiconductor substrate; a contact pad spacer on the first interlayer insulating film; and a contact pad in the first interlayer insulating film and the contact pad spacer. The cross-sectional area of an upper portion of the contact pad in the contact pad spacer in a direction horizontal to the substrate is equal to or less than a cross-sectional area of an intermediate portion at an interface between the contact pad spacer and the first interlayer insulating film in a direction horizontal to the substrate.
摘要翻译：半导体器件及其制造方法降低电缺陷发生的可能性。该器件包括在半导体衬底上的第一层间绝缘膜; 第一层间绝缘膜上的接触垫间隔物; 以及第一层间绝缘膜和接触垫间隔件中的接触焊盘。接触垫隔离物在接触垫隔离物的上部的横截面积与基板水平的方向的截面面积等于或小于接触垫间隔件和接触垫间隔件之间的界面处的中间部分的横截面积第一层间绝缘膜在与基板水平的方向上。

6. 发明申请

US20090072307A1 Semiconductor integrated circuit and method of manufacturing the same 有权
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US20090072307A1
公开(公告)日：2009-03-19
申请号：US12230614
申请日：2008-09-02
申请人： Dae-Ik Kim , Yong-Il Kim
发明人： Dae-Ik Kim , Yong-Il Kim
IPC分类号： H01L27/088 , H01L21/28
CPC分类号： H01L21/823456 , H01L29/1037 , H01L29/66583 , H01L29/66621
摘要： A semiconductor integrated circuit includes a semiconductor substrate, a plurality of trenches formed to extend in one direction in the semiconductor substrate, at least one connecting trench connecting at least two of the plurality of trenches to each other, a plurality of trench transistors including a plurality of gate electrodes, each gate electrode partially filling a corresponding trench, and a capping layer filling the at least one connecting trench.
摘要翻译：半导体集成电路包括半导体衬底，形成为在半导体衬底中沿一个方向延伸的多个沟槽，至少一个将多个沟槽中的至少两个彼此连接的连接沟槽，多个沟槽晶体管，其包括多个的栅电极，每个栅电极部分地填充相应的沟槽，以及填充所述至少一个连接沟槽的封盖层。

7. 发明申请

US20080277773A1 CIRCUIT STRUCTURES AND METHODS WITH BEOL LAYER(S) CONFIGURED TO BLOCK ELECTROMAGNETIC INTERFERENCE 有权
标题翻译：具有配置为阻塞电磁干扰的波形层的电路结构和方法
公开(公告)号：US20080277773A1
公开(公告)日：2008-11-13
申请号：US11747342
申请日：2007-05-11
申请人： Dae Ik KIM , Jonghae KIM , Moon Ju KIM , Choongyeun (Chuck) CHO
发明人： Dae Ik KIM , Jonghae KIM , Moon Ju KIM , Choongyeun (Chuck) CHO
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： Back end of line (BEOL) circuit structures and methods are provided for blocking externally-originating or internally-originating electromagnetic interference. One such BEOL circuit structure includes one or more semiconductor substrates supporting one or more integrated circuits, and one or more BEOL layers disposed over the semiconductor substrate(s). At least one BEOL layer includes a conductive pattern defined at least partially by a plurality of elements arrayed in a first direction and a second direction throughout at least a portion thereof. The plurality of elements are sized and positioned in at least one of the first and second directions to block electromagnetic interference of a particular wavelength from passing therethrough. In one implementation, a first conductive pattern of a first BEOL layer polarizes electromagnetic interference, and a second conductive pattern of a second BEOL layer blocks the polarized electromagnetic interference.
摘要翻译：提供后端（BEOL）电路结构和方法来阻止外部来源或内部产生的电磁干扰。一种这样的BEOL电路结构包括支撑一个或多个集成电路的一个或多个半导体衬底以及设置在半导体衬底之上的一个或多个BEOL层。至少一个BEOL层包括至少部分地由在第一方向和第二方向排列的多个元件至少部分地限定的导电图案。多个元件的大小和位置在第一和第二方向中的至少一个方向上，以阻止特定波长的电磁干扰通过。在一个实施方案中，第一BEOL层的第一导电图案使电磁干扰偏振，并且第二BEOL层的第二导电图案阻挡极化的电磁干扰。

8. 发明申请

US20080136697A1 METHOD AND SYSTEM FOR RANDOM NUMBER GENERATOR WITH RANDOM SAMPLING 失效
标题翻译：随机采样随机数发生器的方法与系统
公开(公告)号：US20080136697A1
公开(公告)日：2008-06-12
申请号：US11608264
申请日：2006-12-08
申请人： Choongyeun Cho , Dae Ik Kim , Jonghae Kim , Moon J. Kim
发明人： Choongyeun Cho , Dae Ik Kim , Jonghae Kim , Moon J. Kim
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： In a random number generator, a first converter converts a first analog noise signal into a random digital clock signal and a second converter samples a second analog noise signal asynchronous to the first analog noise signal in response to the random digital clock signal and generates a random digital number stream. In one aspect, a random number generator output block samples the second converter random digital number stream in response to the random digital clock signal and generates a random number generator block output. In another aspect a pseudo noise source state machine generates the random digital clock signal in response to a first seed generated from the first analog noise signal, a second seed from process variation digital amplifier, and a past machine state.
摘要翻译：在随机数发生器中，第一转换器将第一模拟噪声信号转换成随机数字时钟信号，并且第二转换器响应于随机数字时钟信号对与第一模拟噪声信号异步的第二模拟噪声信号进行采样，并产生随机数数字数字流。一方面，随机数发生器输出块响应于随机数字时钟信号对第二转换器随机数字数字流进行采样，并产生随机数发生器块输出。在另一方面，伪噪声源状态机响应于从第一模拟噪声信号产生的第一种子，来自过程变化数字放大器的第二种子和过去的机器状态，产生随机数字时钟信号。

9. 发明申请

US20080079090A1 Semiconductor device including recessed spherical silicide contact part and method of manufacturing the same 审中-公开
标题翻译：包括凹形球形硅化物接触部件的半导体器件及其制造方法
公开(公告)号：US20080079090A1
公开(公告)日：2008-04-03
申请号：US11900772
申请日：2007-09-13
申请人： Hong-kyu Hwang , Dae-ik Kim , Seung-beom Kim
发明人： Hong-kyu Hwang , Dae-ik Kim , Seung-beom Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/76804 , H01L21/76834 , H01L21/76889 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and fabrication method thereof protect an overgrown metal silicide layer from external damage. The semiconductor device includes: isolation regions formed on a substrate; source/drain regions in the substrate between the isolation regions; a first interlayer insulating film on the substrate, the isolation regions and the source/drain regions; contact pads vertically penetrating the first interlayer insulating film and electrically connected to the source/drain regions; a second interlayer insulating film on the first interlayer insulating film and the contact pads; a metal silicide region selectively formed on the contact pads at a vertical position that is lower than an upper surface of the first interlayer insulating film; and a contact plug vertically penetrating the second interlayer insulating film and electrically connected to the metal silicide region.
摘要翻译：一种半导体器件及其制造方法，其保护过度生长的金属硅化物层免受外部损坏。半导体器件包括：形成在衬底上的隔离区; 在隔离区之间的衬底中的源/漏区; 衬底上的第一层间绝缘膜，隔离区和源极/漏极区; 垂直穿过第一层间绝缘膜并电连接到源极/漏极区的接触焊盘; 在第一层间绝缘膜和接触焊盘上的第二层间绝缘膜; 选择性地形成在所述接触焊盘上的垂直位置处的金属硅化物区域，所述垂直位置比所述第一层间绝缘膜的上表面低; 以及垂直贯穿第二层间绝缘膜并与金属硅化物区电连接的接触插塞。

10. 发明申请

US20150132942A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING BURIED CONTACTS AND RELATED SEMICONDUCTOR DEVICES 有权
标题翻译：制造带有接触触点的半导体器件和相关半导体器件的方法
公开(公告)号：US20150132942A1
公开(公告)日：2015-05-14
申请号：US14538832
申请日：2014-11-12
申请人： Dae-ik Kim , Hyoung-sub Kim , Yoo-sang Hwang , Ji-young Kim
发明人： Dae-ik Kim , Hyoung-sub Kim , Yoo-sang Hwang , Ji-young Kim
IPC分类号： H01L21/768 , H01L21/321 , H01L21/3205 , H01L21/311
CPC分类号： H01L27/10823 , H01L21/31111 , H01L21/31144 , H01L21/76224 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L27/10814 , H01L27/10855 , H01L27/10876 , H01L27/10885 , H01L27/10888 , H01L27/10891
摘要： Provided is a method of manufacturing a semiconductor device. The method includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer.
摘要翻译：提供一种制造半导体器件的方法。该方法包括：通过在第一方向上布置的第一槽形成位线结构，该第一槽在第一方向上延伸，并且在垂直于第一方向的第二方向上彼此间隔开，在其中掩埋有字线的衬底上; 在位线结构的两个侧壁上形成多层间隔物; 形成牺牲层以填充第一凹槽; 通过图案化牺牲层形成在第一方向和第二方向上彼此间隔开的第二凹槽; 蚀刻位于第二凹槽中的多层间隔物的最外层间隔; 在第二槽中形成第一辅助间隔件; 形成绝缘层以填充第二凹槽; 以及通过去除牺牲层和绝缘层，在第一辅助隔离物的两侧上，在第一方向和第二方向上形成彼此间隔开的第三槽。

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