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1. 发明授权

US08301288B2 Optimized scheduling based on sensitivity data 有权
标题翻译：基于灵敏度数据优化调度
公开(公告)号：US08301288B2
公开(公告)日：2012-10-30
申请号：US10710065
申请日：2004-06-16
申请人： Brian T. Denton , Cuc K Huynh , Shreesh S. Tandel , Steven H. Voldman
发明人： Brian T. Denton , Cuc K Huynh , Shreesh S. Tandel , Steven H. Voldman
IPC分类号： G06F19/00 , G05B13/02 , H01L21/00 , H01L21/66
CPC分类号： G06Q10/06
摘要： A scheduling optimizer system, method and program product that analyzes a device for sensitivities, such as ESD sensitivities, and allows for modification of a floor schedule of the assembly unit of the device based on the sensitivity of the device while improving the overall performance of the assembly unit are disclosed. The scheduling optimizer analyzes sensitivity data for a device during operation of the assembly unit on the floor schedule. The floor schedule is then optimized based on the analyzed sensitivity data.
摘要翻译：调度优化器系统，方法和程序产品，用于分析设备的灵敏度，如ESD灵敏度，并允许基于设备的灵敏度修改设备的组装单元的楼层调度，同时提高整体性能组装单元被公开。调度优化器根据楼层进度分析装配单元运行期间设备的灵敏度数据。然后根据分析的灵敏度数据优化楼层进度。

2. 发明授权

US07754394B2 Method to etch chrome for photomask fabrication 失效
标题翻译：蚀刻铬用于光掩模制造的方法
公开(公告)号：US07754394B2
公开(公告)日：2010-07-13
申请号：US11559417
申请日：2006-11-14
申请人： Shaun B Crawford , Thomas B Faure , Cuc K Huynh , James P Levin
发明人： Shaun B Crawford , Thomas B Faure , Cuc K Huynh , James P Levin
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： G03F1/54 , G03F1/30 , G03F1/80
摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.
摘要翻译：提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。

3. 发明授权

US5974868A Downstream monitor for CMP brush cleaners 失效
标题翻译： CMP洗刷机下游监视器
公开(公告)号：US5974868A
公开(公告)日：1999-11-02
申请号：US136835
申请日：1998-08-20
申请人： Donald M. Decain , Cuc K. Huynh , Robert A. Jurjevic , Douglas P. Nadeau , Marc A. Taubenblatt
发明人： Donald M. Decain , Cuc K. Huynh , Robert A. Jurjevic , Douglas P. Nadeau , Marc A. Taubenblatt
IPC分类号： B08B3/00 , G01N33/00 , H01L21/00 , B05C11/00 , B03D3/00 , G01N15/02
CPC分类号： H01L21/67253 , B08B3/00 , H01L21/67046 , G01N2033/0095
摘要： The present invention is a contamination measuring device and method of using the same according to a Chemical Mechanical Polishing (CMP) brush cleaner equipment/technology. A collection device is mounted in a brush cleaning device for collecting effluent which flows off of a wafer. The effluent is passed to a particle counter which measures the contamination levels of the effluent. A computer stores the data collected by the particle counter and computes the particles per liter of effluent and provides real time data. The contamination of the effluent corresponds to the contamination of the brushes in the cleaning device and therefore is means for predicting when the brushes in the cleaning device should be replaced.
摘要翻译：本发明是根据化学机械抛光（CMP）刷清洁器设备/技术的污染测量装置及其使用方法。收集装置安装在刷清洁装置中，用于收集从晶片流出的流出物。流出物被传递到测量流出物污染水平的颗粒计数器。计算机存储由颗粒计数器收集的数据，并计算每升流出物的颗粒数，并提供实时数据。流出物的污染物对应于清洁装置中的刷子的污染，因此是用于预测何时应该更换清洁装置中的刷子的装置。

4. 发明授权

US07955988B2 Photoresist trimming process 有权
标题翻译：光刻胶修边工艺
公开(公告)号：US07955988B2
公开(公告)日：2011-06-07
申请号：US11862255
申请日：2007-09-27
申请人： Shaun Crawford , Cuc K. Huynh , A. Gary Reid , Adam C. Smith , Thomas M. Wagner
发明人： Shaun Crawford , Cuc K. Huynh , A. Gary Reid , Adam C. Smith , Thomas M. Wagner
IPC分类号： H01L21/302
CPC分类号： G03F7/427 , G03F1/68 , G03F7/40 , H01L21/31138 , H01L21/31144
摘要： A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.
摘要翻译：提供光致抗蚀剂修整气体化合物，其将从光刻胶的侧壁的下部选择性地去除抗蚀剂底脚或浮渣。此外，修剪剂化合物硬化或韧化光致抗蚀剂的上表面，从而加强光致抗蚀剂。修剪剂化合物包括O 2和至少一种其它气态氧化物，并且在光致抗蚀剂中形成沟槽之后通常用于干蚀刻工艺。除了O2之外的其它氧化物气体可以包括CO 2，SO 2和NO 2。

5. 发明授权

US06599173B1 Method to prevent leaving residual metal in CMP process of metal interconnect 失效
标题翻译：防止金属互连CMP工艺中留下残留金属的方法
公开(公告)号：US06599173B1
公开(公告)日：2003-07-29
申请号：US09608941
申请日：2000-06-30
申请人： Jose L. Cruz , Cuc K. Huynh , Timothy C. Krywanczyk , Douglas K. Sturtevant
发明人： Jose L. Cruz , Cuc K. Huynh , Timothy C. Krywanczyk , Douglas K. Sturtevant
IPC分类号： B24B722
CPC分类号： H01L21/3212 , Y02P80/30
摘要： A CMP slurry for and method of polishing a semiconductor wafer during formation of metal interconnects are disclosed. The present invention utilizes a first slurry comprising a first oxidizer, preferably ferric nitrate, to remove the excess metal of the metal interconnect but which leaves the metal residues on the surface of the wafer. A second slurry comprising another oxidizer, preferably potassium iodate solution, having a greater affinity to both the metal residue and the liner material than the underlying dielectric is used to remove the metal residue and liner material with significantly reduced scratching of the underlying dielectric. The more robust metal interconnects formed utilizing the present invention is effective in lowering the overall resistance of a wafer, reducing the number of shorts, and provides greater protection of the underlying dielectric. Overpolishing of the wafer and its associated problems are avoided.
摘要翻译：公开了一种用于在形成金属互连件期间研磨半导体晶片的CMP浆料和方法。本发明利用包含第一氧化剂，优选硝酸铁的第一浆料来除去金属互连体的多余金属，但是留下晶片表面上的金属残留物。使用包含另一种氧化剂（优选碘酸钾溶液）的第二种浆料，其比底层电介质对金属残余物和衬垫材料具有更大的亲和力，以便以显着减少的下面的电介质的刮擦去除金属残余物和衬垫材料。利用本发明形成的更坚固的金属互连在降低晶片的整体电阻，减少短路数量方面是有效的，并且为下面的电介质提供更大的保护。避免晶片的抛光及其相关问题。

6. 发明授权

US06468135B1 Method and apparatus for multiphase chemical mechanical polishing 有权
标题翻译：多相化学机械抛光的方法和装置
公开(公告)号：US06468135B1
公开(公告)日：2002-10-22
申请号：US09302639
申请日：1999-04-30
申请人： Jose L. Cruz , Cuc K. Huynh , David L. Walker
发明人： Jose L. Cruz , Cuc K. Huynh , David L. Walker
IPC分类号： B24B100
CPC分类号： B24B37/042 , B08B3/02
摘要： The present invention is a method and apparatus for CMP processing that reduces scratching of the insulating film and conductor lines of a wafer. More specifically, the method and apparatus introduce an aqueous solution to the polishing pad and wafer during various intervals of the polishing procedure.
摘要翻译：本发明是一种用于CMP处理的方法和装置，其减少了晶片的绝缘膜和导体线的划伤。更具体地说，该方法和装置在抛光过程的各个间隔期间将水溶液引入抛光垫和晶片。

7. 发明授权

US5834642A Downstream monitor for CMP brush cleaners 失效
公开(公告)号：US5834642A
公开(公告)日：1998-11-10
申请号：US898847
申请日：1997-07-25
申请人： Donald M. Decain , Cuc K. Huynh , Robert A. Jurjevic , Douglas P. Nadeau , Marc A. Taubenblatt
发明人： Donald M. Decain , Cuc K. Huynh , Robert A. Jurjevic , Douglas P. Nadeau , Marc A. Taubenblatt
IPC分类号： B08B3/00 , G01N33/00 , H01L21/00 , B05C11/00 , B03D3/00 , G01N15/02
CPC分类号： H01L21/67253 , B08B3/00 , H01L21/67046 , G01N2033/0095
摘要： The present invention is a contamination measuring device and method of using the same according to a Chemical Mechanical Polishing (CMP) brush cleaner equipment/technology. A collection device is mounted in a brush cleaning device for collecting effluent which flows off of a wafer. The effluent is passed to a particle counter which measures the contamination levels of the effluent. A computer stores the data collected by the particle counter and computes the particles per liter of effluent and provides real time data. The contamination of the effluent corresponds to the contamination of the brushes in the cleaning device and therefore is means for predicting when the brushes in the cleaning device should be replaced.

8. 发明申请

US20080113275A1 Method to etch chrome for photomask fabrication 失效
标题翻译：蚀刻铬用于光掩模制造的方法
公开(公告)号：US20080113275A1
公开(公告)日：2008-05-15
申请号：US11559417
申请日：2006-11-14
申请人： Shaun B. Crawford , Thomas B. Faure , Cuc K. Huynh , James P. Levin
发明人： Shaun B. Crawford , Thomas B. Faure , Cuc K. Huynh , James P. Levin
IPC分类号： G03F1/00
CPC分类号： G03F1/54 , G03F1/30 , G03F1/80
摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.
摘要翻译：提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。

9. 发明授权

US07014959B2 CD uniformity of chrome etch to photomask process 失效
标题翻译：铬蚀刻到光掩模工艺的CD均匀性
公开(公告)号：US07014959B2
公开(公告)日：2006-03-21
申请号：US10605801
申请日：2003-10-28
申请人： Shaun B. Crawford , Timothy J. Dalton , Thomas B. Faure , Cuc K. Huynh , Michelle L. Steen , Thomas M. Wagner
发明人： Shaun B. Crawford , Timothy J. Dalton , Thomas B. Faure , Cuc K. Huynh , Michelle L. Steen , Thomas M. Wagner
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： C23F4/00 , G03F1/80 , H01L21/0332 , H01L21/32136
摘要： A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.
摘要翻译：通过在透明基底上沉积不透明层而形成光掩模。抗蚀剂形成在不透明层上并选择性地图案化以暴露待被蚀刻出的不透明层的部分。在干蚀刻步骤期间，光掩模暴露于在不透明层和抗蚀剂层之间具有等于或高于1.2:1的选择性的蚀刻剂气体混合物。由于气体混合物的选择性，可以使用更薄的抗蚀剂膜，从而提高不透明层图案的分辨率和精度。此外，由于对宏观负载效应和图案密度效应的敏感性降低，抗蚀剂的过蚀刻和不透明层的去抛光显着降低，从而实现了改进的蚀刻均匀性并因此改善了CD均匀性。

10. 发明授权

US06387810B2 Method for homogenizing device parameters through photoresist planarization 失效
标题翻译：通过光致抗蚀剂平坦化使器件参数均匀化的方法
公开(公告)号：US06387810B2
公开(公告)日：2002-05-14
申请号：US09340796
申请日：1999-06-28
申请人： Gary J. Beardsley , Zhong X. He , Cuc K. Huynh , Michael P. McMahon
发明人： Gary J. Beardsley , Zhong X. He , Cuc K. Huynh , Michael P. McMahon
IPC分类号： H01L21304
CPC分类号： H01L21/76224
摘要： In a fabrication process, photoresist is disposed over a semiconductor substrate (10), covering a front surface (11) of the substrate (10) and filling trenches (12, 14, 16, 18) therein. The photoresist is planarized in chemical mechanical polishing to achieve a uniform thickness throughout the substrate (10). An anisotropic etching process partially removes the photoresist in the trenches (12, 14, 16, 18), thereby creating recesses in the trenches (12, 14, 16, 18). Because the thickness of the photoresist is uniform throughout the substrate (10) before the etching process, the depths of the recesses in different trenches (12, 14, 16, 18) are substantially equal to each other. A uniform recess depth throughout the substrate (10) is thereby achieved. The uniform recess depth facilitates in ensuring the semiconductor devices fabricated on the substrate (10) to have consistent parameters, characteristics, and performances.
摘要翻译：在制造工艺中，将光致抗蚀剂设置在半导体衬底（10）上，覆盖衬底（10）的前表面（11）并在其中填充沟槽（12,14,16,18）。光致抗蚀剂在化学机械抛光中被平坦化，以在整个基底（10）上实现均匀的厚度。各向异性蚀刻工艺部分去除沟槽（12,14,16,18）中的光致抗蚀剂，从而在沟槽（12,14,16,18）中产生凹陷。由于在蚀刻工艺之前，光致抗蚀剂的厚度在整个基板（10）上是均匀的，所以不同沟槽（12,14,16,18）中的凹槽的深度基本相等。从而实现整个基板（10）的均匀凹陷深度。均匀凹陷深度有助于确保制造在基板（10）上的半导体器件具有一致的参数，特性和性能。

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