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1. 发明授权

US06387810B2 Method for homogenizing device parameters through photoresist planarization 失效
标题翻译：通过光致抗蚀剂平坦化使器件参数均匀化的方法
公开(公告)号：US06387810B2
公开(公告)日：2002-05-14
申请号：US09340796
申请日：1999-06-28
申请人： Gary J. Beardsley , Zhong X. He , Cuc K. Huynh , Michael P. McMahon
发明人： Gary J. Beardsley , Zhong X. He , Cuc K. Huynh , Michael P. McMahon
IPC分类号： H01L21304
CPC分类号： H01L21/76224
摘要： In a fabrication process, photoresist is disposed over a semiconductor substrate (10), covering a front surface (11) of the substrate (10) and filling trenches (12, 14, 16, 18) therein. The photoresist is planarized in chemical mechanical polishing to achieve a uniform thickness throughout the substrate (10). An anisotropic etching process partially removes the photoresist in the trenches (12, 14, 16, 18), thereby creating recesses in the trenches (12, 14, 16, 18). Because the thickness of the photoresist is uniform throughout the substrate (10) before the etching process, the depths of the recesses in different trenches (12, 14, 16, 18) are substantially equal to each other. A uniform recess depth throughout the substrate (10) is thereby achieved. The uniform recess depth facilitates in ensuring the semiconductor devices fabricated on the substrate (10) to have consistent parameters, characteristics, and performances.
摘要翻译：在制造工艺中，将光致抗蚀剂设置在半导体衬底（10）上，覆盖衬底（10）的前表面（11）并在其中填充沟槽（12,14,16,18）。光致抗蚀剂在化学机械抛光中被平坦化，以在整个基底（10）上实现均匀的厚度。各向异性蚀刻工艺部分去除沟槽（12,14,16,18）中的光致抗蚀剂，从而在沟槽（12,14,16,18）中产生凹陷。由于在蚀刻工艺之前，光致抗蚀剂的厚度在整个基板（10）上是均匀的，所以不同沟槽（12,14,16,18）中的凹槽的深度基本相等。从而实现整个基板（10）的均匀凹陷深度。均匀凹陷深度有助于确保制造在基板（10）上的半导体器件具有一致的参数，特性和性能。

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