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1. 发明申请

US20080113275A1 Method to etch chrome for photomask fabrication 失效
标题翻译：蚀刻铬用于光掩模制造的方法
公开(公告)号：US20080113275A1
公开(公告)日：2008-05-15
申请号：US11559417
申请日：2006-11-14
申请人： Shaun B. Crawford , Thomas B. Faure , Cuc K. Huynh , James P. Levin
发明人： Shaun B. Crawford , Thomas B. Faure , Cuc K. Huynh , James P. Levin
IPC分类号： G03F1/00
CPC分类号： G03F1/54 , G03F1/30 , G03F1/80
摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.
摘要翻译：提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。

2. 发明授权

US07014959B2 CD uniformity of chrome etch to photomask process 失效
标题翻译：铬蚀刻到光掩模工艺的CD均匀性
公开(公告)号：US07014959B2
公开(公告)日：2006-03-21
申请号：US10605801
申请日：2003-10-28
申请人： Shaun B. Crawford , Timothy J. Dalton , Thomas B. Faure , Cuc K. Huynh , Michelle L. Steen , Thomas M. Wagner
发明人： Shaun B. Crawford , Timothy J. Dalton , Thomas B. Faure , Cuc K. Huynh , Michelle L. Steen , Thomas M. Wagner
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： C23F4/00 , G03F1/80 , H01L21/0332 , H01L21/32136
摘要： A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.
摘要翻译：通过在透明基底上沉积不透明层而形成光掩模。抗蚀剂形成在不透明层上并选择性地图案化以暴露待被蚀刻出的不透明层的部分。在干蚀刻步骤期间，光掩模暴露于在不透明层和抗蚀剂层之间具有等于或高于1.2:1的选择性的蚀刻剂气体混合物。由于气体混合物的选择性，可以使用更薄的抗蚀剂膜，从而提高不透明层图案的分辨率和精度。此外，由于对宏观负载效应和图案密度效应的敏感性降低，抗蚀剂的过蚀刻和不透明层的去抛光显着降低，从而实现了改进的蚀刻均匀性并因此改善了CD均匀性。

3. 发明授权

US07754394B2 Method to etch chrome for photomask fabrication 失效
标题翻译：蚀刻铬用于光掩模制造的方法
公开(公告)号：US07754394B2
公开(公告)日：2010-07-13
申请号：US11559417
申请日：2006-11-14
申请人： Shaun B Crawford , Thomas B Faure , Cuc K Huynh , James P Levin
发明人： Shaun B Crawford , Thomas B Faure , Cuc K Huynh , James P Levin
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： G03F1/54 , G03F1/30 , G03F1/80
摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.
摘要翻译：提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。

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