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    • 5. 发明申请
    • METHOD FOR ERASING NON-VOLATILE MEMORY
    • 用于擦除非易失性存储器的方法
    • US20070206424A1
    • 2007-09-06
    • US11531690
    • 2006-09-13
    • Chao-Wei KuoChih-Ming ChaoHann-Ping Hwang
    • Chao-Wei KuoChih-Ming ChaoHann-Ping Hwang
    • G11C16/04G11C11/34
    • G11C16/14
    • A method for erasing a non-volatile memory is provided. The non-volatile memory includes a first conductive type substrate, a second conductive type well disposed in the first conductive type substrate, a first conductive type well disposed on the second conductive type well, and a memory cell disposed on the first conductive type substrate. The memory cell includes a charge trapping layer and a gate. The erasing method includes the following steps. A first voltage is applied to the gate, a second voltage is applied to the first conductive type substrate, and the second conductive type well is floating. The second voltage is large enough to induce a substrate hot hole effect. The holes are injected into the charge trapping layer by applying the first voltage.
    • 提供了一种擦除非易失性存储器的方法。 非易失性存储器包括第一导电型衬底,布置在第一导电类型衬底中的第二导电类型阱,布置在第二导电类型阱上的第一导电类型阱以及设置在第一导电类型衬底上的存储单元。 存储单元包括电荷捕获层和栅极。 擦除方法包括以下步骤。 向栅极施加第一电压,将第二电压施加到第一导电型衬底,并且第二导电类型阱浮置。 第二电压足够大以引起基板热孔效应。 通过施加第一电压将空穴注入电荷俘获层。