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1. 发明授权

US4822151A Optical device with phase-locked diodelaser array 失效
标题翻译：具有锁相二极管阵列的光学器件
公开(公告)号：US4822151A
公开(公告)日：1989-04-18
申请号：US162920
申请日：1988-03-02
申请人： Kimio Tatsuno , Jan Opschoor , Carolus J. van der Poel , Ronald R. Drenten
发明人： Kimio Tatsuno , Jan Opschoor , Carolus J. van der Poel , Ronald R. Drenten
IPC分类号： G02B27/09 , G02B27/28 , G11B7/125 , G11B7/135 , G02F1/01
CPC分类号： G02B19/0057 , G02B19/0014 , G02B27/09 , G02B27/0972 , G02B27/28 , G11B7/127 , G11B7/1359 , G11B7/1395 , G11B7/1398
摘要： A polarization-rotator (22) and a polarization-sensitive beam combiner (30') are arranged in the radiation path between a phase-locked diode laser array (10) radiating in a stable supermode and a collimator lens (46). The two radiation lobes (11, 12) are superposed so that a single radiation spot (S) can be obtained. The quality of the spot can be improved by an arrangement of a prism system (40) and a spatial filter (45) in the lateral far field.

2. 发明授权

US4647944A Method for the optical recording of information and an optical recording element used in the method 失效
标题翻译：用于光学记录信息的方法和用于该方法的光学记录元件
公开(公告)号：US4647944A
公开(公告)日：1987-03-03
申请号：US831781
申请日：1986-02-21
申请人： Dirk J. Gravesteijn , Carolus J. Van Der Poel
发明人： Dirk J. Gravesteijn , Carolus J. Van Der Poel
IPC分类号： G11B7/00 , B41M5/26 , G11B7/0045 , G11B7/243 , G11B7/253 , G11B7/254 , G11B7/257 , G01D15/34
CPC分类号： G11B7/243 , G11B2007/2431 , G11B2007/24314 , G11B2007/24316 , G11B7/00454 , G11B7/2531 , G11B7/2533 , G11B7/2542 , G11B7/2572 , Y10S430/146 , Y10S430/165
摘要： A method for the optical recording of information in which a recording layer 4 of In.sub.x Sb.sub.1-x, Ga.sub.x Sb.sub.1-x or (InSb).sub.y Se.sub.1-y, wherein 0.4.ltoreq.x.ltoreq.0.6 and 0.7.ltoreq.1.0, or mixtures thereof, provided on a synthetic resin substrate (2) (FIG. 1) in a maximum layer thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm which is pulsated in accordance with the binary information to be recorded with a pulse time of at most 200 ns, a crystalline area 6 (bit) having maximum dimensions of a few micrometers being formed in the amorphous layer in the exposed places, as well as an optical recording element used in the method.
摘要翻译：用于记录信息的方法，其中InxSb1-x，GaxSb1-x或（InSb）y Se1-y的记录层4，其中0.4≤x≤0.6且0.7 <1.0，或其混合物将其设置在150nm的最大层厚度的合成树脂基板（2）（图1）上）的情况下，暴露于根据要记录的二进制信息脉动的750-900nm的波长的红外激光脉冲时间最多为200ns，在暴露位置的非晶层中形成最大尺寸为几微米的结晶区域6（位），以及该方法中使用的光学记录元件。

3. 发明授权

US5805630A Optoelectronic semiconductor device with an array of semiconductor diode lasers and method of manufacturing such a device 失效
标题翻译：具有半导体二极管激光器阵列的光电子半导体器件及其制造方法
公开(公告)号：US5805630A
公开(公告)日：1998-09-08
申请号：US273528
申请日：1994-07-11
申请人： Adriaan Valster , Carolus J. Van Der Poel , Jeroen J. L. Horikx
发明人： Adriaan Valster , Carolus J. Van Der Poel , Jeroen J. L. Horikx
IPC分类号： H01S3/23 , H01S3/06 , H01S5/00 , H01S5/024 , H01S5/323 , H01S5/40 , H01S3/18
CPC分类号： H01S5/4031 , H01S5/02461 , H01S5/32325
摘要： An array of semiconductor diode lasers (11, 12) is a very suitable radiation source for various applications such as optical read and write systems and laser printers. Such an array includes a semiconductor body (10) with a substrate (1) and a layer structure provided thereon in which at least two lasers (11, 12) are formed which are mutually separated by a groove (20). In the known array, the groove (20) reaches down into the substrate (1), so that the lasers (11, 12) are electrically separated from one another. According to the invention, the array of lasers (11, 12) is provided with a groove (20) with a major portion (d) of its depth (D) which is situated within the substrate (1). As a result of this, the lasers (11, 12) of the array show a surprisingly low crosstalk. Preferably, the portion (d) of the groove (20) situated in the substrate (1) is at least 3 .mu.m deep. The best results are obtained with depths (d) of approximately 10 up to at most 40 .mu.m. In a very favorable embodiment, the device is provided at the upper side with a comparatively thick electrically and thermally conducting layer. In a preferred embodiment, the groove (20) is formed by reactive ion etching so that the groove (20) can be narrow and deep and the lasers (11, 12) will lie close together. A plasma including SiCl.sub.4, Ar and CH.sub.4 forms a particularly suitable etchant for lasers (11, 12) in the InGaP/InAlGaP material system.
摘要翻译：一组半导体二极管激光器（11,12）是用于各种应用的非常合适的辐射源，例如光学读取和写入系统和激光打印机。这种阵列包括具有衬底（1）的半导体本体（10）和设置在其上的层结构，其中形成有由凹槽（20）相互分开的至少两个激光器（11,12）。在已知的阵列中，槽（20）向下延伸到衬底（1）中，使得激光器（11,12）彼此电分离。根据本发明，激光器阵列（11,12）设置有其深度（D）的主要部分（d）位于衬底（1）内的凹槽（20）。作为其结果，阵列的激光器（11,12）显示出惊人的低串扰。优选地，位于基板（1）中的凹槽（20）的部分（d）至少为3μm深。获得最好的结果是深度（d）大约10到最多40微米。在非常有利的实施例中，该装置在上侧设置有较厚的导电和导热层。在优选实施例中，通过反应离子蚀刻形成凹槽（20），使得凹槽（20）可以窄而深，并且激光器（11,12）将靠近在一起。包括SiCl 4，Ar和CH 4的等离子体在InGaP / InAlGaP材料系统中形成用于激光器（11,12）的特别合适的蚀刻剂。

4. 发明授权

US5574743A Semiconductor diode laser having improved performance and method of manufacturing same 失效
标题翻译：具有改进性能的半导体二极管激光器及其制造方法
公开(公告)号：US5574743A
公开(公告)日：1996-11-12
申请号：US407931
申请日：1995-03-21
申请人： Carolus J. van der Poel , Gerard A. Acket , Marcel F. C. Schemmann
发明人： Carolus J. van der Poel , Gerard A. Acket , Marcel F. C. Schemmann
IPC分类号： H01S5/00 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01S5/2231 , H01S5/1039 , H01S5/204 , H01S5/22 , H01S5/223
摘要： Semiconductor diode lasers are used inter alia in optical disc systems, laser printers, bar code readers, and glass fibre communication systems. Lasers having a so-called (weakly) index-guided structure are very suitable for many applications inter alia because they can be manufactured comparatively simply and reliably. A disadvantage of the known (weakly) index-guided laser is that the so-called P-I (=optical power-current) characteristic thereof exhibits a kink. Such a kink limits the use of the laser to a relatively low optical power. According to the invention, such a (weakly) index-guided laser has a resonance cavity with a length for which the optical power at which a kink occurs in the P-I characteristic is a maximum. It was a surprise to find that the occurrence of a kink in the P-I curve of such a (weakly) index-guided laser depends on the length of the resonance cavity. Very surprising is the appearance of a maximum value in this kink power as a function of the length of the resonance cavity. Equally surprising is the occurrence of a series of such maxima, which are substantially equally high, and which are formed by the crests of a sawtooth curve with a very steep flank at the rising edge to each maximum. As a result, the laser length may be optimized not only in relation to the occurrence of kinks in the P-I characteristic but also in relation to other properties. The invention also relates to a method of manufacturing a laser according to the invention, which preferably includes a ridge waveguide structure.
摘要翻译：半导体二极管激光器尤其用于光盘系统，激光打印机，条形码读取器和玻璃纤维通信系统中。具有所谓（弱）折射率引导结构的激光器特别适用于许多应用，因为它们可以相对简单且可靠地制造。已知（弱）折射率引导激光器的缺点在于其所谓的P-I（=光功率 - 电流）特性表现为扭结。这样的扭结将激光器的使用限制在相对低的光功率。根据本发明，这种（弱）折射率引导激光器具有谐振腔，其具有在P-I特性中发生扭结的光功率为最大的长度。令人吃惊的是，发现在这种（弱）折射率引导激光器的P-I曲线中出现扭结，取决于谐振腔的长度。非常令人惊讶的是，这个扭结功率的最大值的出现是谐振腔长度的函数。同样令人惊讶的是，一系列这样的最大值的出现是基本上同样高的，并且它们由在上升沿到每个最大值的具有非常陡峭的侧面的锯齿曲线的波峰形成。结果，激光长度不仅可以相对于P-I特性中的扭结的发生而且与其它特性有关。本发明还涉及根据本发明的制造激光器的方法，其优选地包括脊形波导结构。

5. 发明授权

US4808514A Method for the optical recording of information and an optical recording element used in the method 失效
标题翻译：用于光学记录信息的方法和用于该方法的光学记录元件
公开(公告)号：US4808514A
公开(公告)日：1989-02-28
申请号：US942659
申请日：1986-12-17
申请人： Dirk J. Gravesteijn , Carolus J. van der Poel
发明人： Dirk J. Gravesteijn , Carolus J. van der Poel
IPC分类号： G11B7/00 , B41M5/26 , G11B7/0045 , G11B7/243 , G11B7/253 , G11B7/254 , G11B7/257 , G03C1/72
CPC分类号： G11B7/243 , G11B2007/2431 , G11B2007/24314 , G11B2007/24316 , G11B7/00454 , G11B7/2531 , G11B7/2533 , G11B7/2542 , G11B7/2572 , Y10S430/146 , Y10S430/165
摘要： A method is provided for the optical recording of information in which an amorphous recording layer 4 having a composition according to formula (1) provided on a synthetic resin substrate (2) (FIG. 1) in a maximum layer thickness of 150 nm is exposed of infrared laser light having a wavelength of 750-900 nm and pulsed in accordance with the binary information to be recorded with a pulse time of at most 200 ns. A crystalline area 6 (bit) having maximum dimensions of a few micrometers is formed in the amorphous layer in the exposed places. As optical recording element is also provided for use in the method.
摘要翻译：提供了一种用于光学记录信息的方法，其中在最大层厚度为150nm的合成树脂基板（2）（图1）上提供具有根据式（1）的组成的非晶记录层4暴露的红外激光，其波长为750-900nm，并根据二进制信息进行脉冲，以便以至多200ns的脉冲时间进行记录。在暴露位置的非晶层中形成最大尺寸为几微米的结晶区域6（位）。由于光学记录元件也用于该方法。

6. 发明授权

US5545903A Radiation-emitting semiconductor diode and method of manufacturing same 失效
标题翻译：辐射发射半导体二极管及其制造方法
公开(公告)号：US5545903A
公开(公告)日：1996-08-13
申请号：US266043
申请日：1994-06-27
申请人： Carolus J. Van Der Poel , Adriaan Valster , Hubertus P. M. M. Ambrosius
发明人： Carolus J. Van Der Poel , Adriaan Valster , Hubertus P. M. M. Ambrosius
IPC分类号： H01S5/00 , H01S5/32 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/32308 , H01S5/343 , H01S5/34313 , H01S5/3211 , H01S5/32316 , H01S5/3432
摘要： Radiation-emitting semiconductor diodes are used as laser diodes or LEDs inter alia in optical disc systems, laser printers and bar code readers. The emission wavelength in these cases lies preferably in the visible range of the spectrum. Known diodes have an active layer (3A) and cladding layers (2, 4) which comprise either AlGaAs or InAlGaP. These known diodes have the disadvantage that they do not cover a portion of the visible spectrum between 880 and 600 nm.A diode according to the invention is characterized in that the active layer (3A) comprises Al.sub.x Ga.sub.l-x As and the cladding layers (2, 4) comprise Al.sub.y Ga.sub.w In.sub.l-y-w P, while the active layer (3A) has such an aluminjure content (x) and such a thickness (d) that the wavelength of the photoluminescence emission lies between approximately 770 and 690 nm. This results in the availability of (laser) diodes covering the entire spectrum from approximately 880 nm to 600 nm which operate satisfactorily, supply a high power, and are easy to manufacture. Preferably, the active layer comprises a (multiple) quantum well structure of alternating quantum well layers and barrier layers, both comprising AlGaAs, but with different aluminium contents.
摘要翻译：辐射发射半导体二极管用作激光二极管或LED，特别是在光盘系统，激光打印机和条形码读取器中。这些情况下的发射波长优选在光谱的可见范围内。已知的二极管具有包括AlGaAs或InAlGaP的有源层（3A）和覆层（2,4）。这些已知的二极管的缺点是它们不覆盖880和600nm之间的可见光谱的一部分。根据本发明的二极管的特征在于，有源层（3A）包括Al x Ga 1-x As，并且包覆层（2,4）包含AlyGawInl-y-wP，而活性层（3A）具有这样的铝含量（x ）和这样的厚度（d），使得光致发光发射的波长在约770和690nm之间。这导致覆盖从约880nm到600nm的整个光谱的（激光）二极管的可用性，其工作令人满意，提供高功率，并且易于制造。优选地，有源层包括交替量子阱层和阻挡层（包括AlGaAs，但具有不同的铝含量）的（多个）量子阱结构。

7. 发明授权

US5299216A Radiation-emitting semiconductor diode 失效
标题翻译：辐射发射半导体二极管
公开(公告)号：US5299216A
公开(公告)日：1994-03-29
申请号：US982216
申请日：1992-11-25
申请人： Carolus J. van der Poel , Adriaan Valster , Michael J. B. Boermans
发明人： Carolus J. van der Poel , Adriaan Valster , Michael J. B. Boermans
IPC分类号： H01L33/00 , H01L33/30 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/025
CPC分类号： H01L33/30 , H01L33/0025 , H01S5/32325 , H01S5/20 , H01S5/3201
摘要： Radiation-emitting semiconductor diodes are used inter alia in information processing systems as diode lasers or LEDs. Such a radiation-emitting semiconductor diode including an active layer situated between two cladding layers, which layers each include a mixed crystal of III-V semiconductor materials, atoms of different elements, often having a certain degree of ordering, being present on at least one sublattice. An example is an InGaP/InAlGaP diode laser which emits at 670 nm and is highly suitable for various applications. There is a particular demand for diodes which have a high maximum operating temperature at a given wavelength. According to the invention, the composition of the semiconductor material of the active layer is so chosen that this layer has a compression strain, while the atoms of the different elements have a less orderly distribution at least in the semiconductor material of the active layer. This strongly reduces the starting current, while the emission wavelength remains substantially unchanged. In a preferred embodiment, the distribution in the semiconductor materials of the cladding layers is also less orderly, which improves the confinement and thus the temperature dependence characteristics of the starting current. The maximum operating temperature of diode lasers according to the invention is considerably increased owing to a low starting current and a low temperature dependence of this starting current.
摘要翻译：辐射发射半导体二极管尤其用作信息处理系统中的二极管激光器或LED。这种辐射发射半导体二极管包括位于两个包层之间的有源层，该层各自包含III-V族半导体材料的混合晶体，通常具有一定程度的排序的不同元素的原子存在于至少一个子格子例如，InGaP / InAlGaP二极管激光器在670nm处发射并且非常适用于各种应用。特别要求在给定波长下具有高的最高工作温度的二极管。根据本发明，有源层的半导体材料的组成被选择为使得该层具有压缩应变，而不同元素的原子至少在有源层的半导体材料中具有较少的有序分布。这大大降低了启动电流，而发射波长基本保持不变。在优选实施例中，包覆层的半导体材料中的分布也不太有序，这改善了起始电流的约束和温度依赖特性。由于起动电流低以及起动电流的低温依赖性，本发明的二极管激光器的最大工作温度显着增加。

8. 发明授权

US5157754A Wavelength conversion by quasi phase matching and the manufacture and use of optical articles therefor 失效
标题翻译：通过准相位匹配的波长转换及其光学制品的制造和使用
公开(公告)号：US5157754A
公开(公告)日：1992-10-20
申请号：US732028
申请日：1991-07-18
申请人： John D. Bierlein , Joseph B. Brown, III , Carolus J. van der Poel
发明人： John D. Bierlein , Joseph B. Brown, III , Carolus J. van der Poel
IPC分类号： G02F1/35 , G02F1/355 , G02F1/37 , G02F1/377
CPC分类号： G02F1/37 , G02F1/3775 , G02F1/3553 , G02F2001/3548
摘要： Articles and process for wavelength conversion are disclosed which use a series of aligned sections of optical materials for wavelength conversion selected from materials having the formula K.sub.1-x Rb.sub.x TiOMO.sub.4 where x is from 0 to 1 and M is selected from P and As and materials of said formula wherein the cations of said formula have been partially replaced by at least one of Rb.sup.+, Tl.sup.+ and Cs.sup.+, and at least one of Ba.sup.++, Sr.sup.++ and Ca.sup.++. The series of sections is characterized with regard to a change in nonlinear optical coefficient, section length, and section .DELTA.k (i.e., the difference between the sum of the propagation constants for the incident waves and the sum of the propagation constants for the waves generated). The sections are selected such that the sum for the series of the product of the length of each section with the .DELTA.k is equal to about 2.pi.N (where N is an integer other than zero) and the nonlinear optical coefficient for at least one section is changed relative to the nonlinear optical coefficient for at least one adjacent section. Also disclosed is a process for preparing a channel waveguide for wavelength conversion systems wherein areas along a portion of a crystal substrate surface used for forming the desired channel are alternately masked and unmasked during cation replacement by immersion in a molten salt.
摘要翻译：公开了用于波长转换的制品和方法，其使用一系列用于波长转换的光学材料的对准部分，其选自具有式K1-xRbxTiOMO4的材料，其中x为0至1，M选自P和As，并且所述式其中所述式的阳离子已经被Rb +，Tl +和Cs +中的至少一种以及Ba ++，Sr ++和Ca ++中的至少一种部分替代。关于非线性光学系数，截面长度和截面DELTA k的变化（即，入射波的传播常数之和与产生的波的传播常数的和之间的差异，该系列的部分被表征）。这些部分被选择为使得具有DELTA k的每个部分的长度的乘积的序列的和等于大约2pi N（其中N是除零之外的整数），并且至少一个的非线性光学系数截面相对于至少一个相邻部分的非线性光学系数而改变。还公开了一种制备用于波长转换系统的通道波导的方法，其中沿着用于形成所需通道的晶体衬底表面的一部分的区域在通过浸入熔融盐中进行阳离子替换期间被交替地掩蔽并被掩蔽。

9. 发明授权

US4954971A Bidimensional laser array with two groups of active regions 失效
标题翻译：具有两组活动区域的二维激光阵列
公开(公告)号：US4954971A
公开(公告)日：1990-09-04
申请号：US315010
申请日：1989-02-23
申请人： Jan Opschoor , Carolus J. van der Poel , Henri F. J. van 't Blik
发明人： Jan Opschoor , Carolus J. van der Poel , Henri F. J. van 't Blik
IPC分类号： H01S5/00 , H01S5/22 , H01S5/40
CPC分类号： H01S5/405 , H01S5/22
摘要： A semiconductor diode laser array, in which the active regions (3) are arranged in at least two groups, which are located in (two) substantially equidistant planes (V and W). At least one of the groups should comprise at least two active regions.According to the invention, the active regions (3) of one group located in the plane V are fully separated by at least one of the enclosure layers, for example the enclosure layers 2 and 4 (FIG. 1) or the enclosure layer 4 (FIG. 4) from the active regions 3 of the other group located in the plane W.

10. 发明授权

US4816385A Method of optically recording and erasing information 失效
标题翻译：光学记录和擦除信息的方法
公开(公告)号：US4816385A
公开(公告)日：1989-03-28
申请号：US45506
申请日：1987-05-04
申请人： Dirk J. Gravesteijn , Carolus J. Van Der Poel
发明人： Dirk J. Gravesteijn , Carolus J. Van Der Poel
IPC分类号： G11B7/00 , B41M5/26 , G11B7/0055 , G11B7/0065 , G11B7/243 , G11B7/253 , G11B7/254 , G11B7/30 , G03C1/72
CPC分类号： G11B7/241 , G11B7/00454 , G11B7/0062 , G11B7/243 , G11B2007/2431 , G11B2007/24314 , G11B2007/24316 , G11B7/252 , G11B7/2531 , G11B7/2533 , G11B7/2542 , Y10S430/146 , Y10S430/165
摘要： According to the method a rotating recording element 23 (FIG. 3) having a crystalline recording layer 28 of the composition Q.sub.x Sb.sub.y Te.sub.z, wherein Q=In, Ga; X=34-44 at. %; y=51-62 at. %; Z=2-9 at. %; is exposed to a pulsated laser light spot 29 (FIG. ) in which amorphous information bits are formed which are read by means of weak laser light 30 and which can be erased in real time during one revolution of the element 23 by means of a laser light erasing spot 33 (FIG. 4) and be returned to the crystalline state.

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