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1. 发明授权

US5703894A Radiation-emitting semiconductor diode and method of manufacturing such a diode 失效
标题翻译：辐射发射半导体二极管及其制造方法
公开(公告)号：US5703894A
公开(公告)日：1997-12-30
申请号：US538267
申请日：1995-10-03
申请人： Adriaan Valster , Johannes A. De Poorter , Gerard A. Acket
发明人： Adriaan Valster , Johannes A. De Poorter , Gerard A. Acket
IPC分类号： H01L21/18 , H01L21/20 , H01L21/22 , H01L21/329 , H01L33/00 , H01L33/06 , H01S5/16 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H02S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/182 , H01L33/0062 , H01S5/162 , H01S5/2059 , H01S5/3202 , H01S5/3209 , H01S5/3413 , H01S5/3432
摘要： The invention relates to a radiation-emitting semiconductor diode, in particular a laser diode, whose active layer (3) comprises a II-V mixed crystal in which various elements, for example III elements, may be present in orderly or disorderly arrangement. Such a mixed crystal is InGaP whose emission lies below 1 .mu.m. In the known diode, catastrophic optical degradation is suppressed in that the active layer (3) has an orderly distribution in the active region (3A) and a disorderly distribution of the elements in a passive region (3B) situated near an exit surface (51). The known diode has a low efficiency and a high starting current. In a diode according to the invention, the distribution of the different elements is disorderly in the active region (3A), while the passive region (3B) is formed through local intermixing of the active layer (3). Such a diode surprisingly has a high efficiency and a low starting current, shows very little propensity to said degradation, and is in addition very easy to manufacture. The invention accordingly also relates to a method of manufacturing such a diode. Said disorderly distribution is realised, for example, through a high growing temperature, while said intermixing is achieved through local diffusion of, for example, Zn or Si. Intermixing may take place during or after the manufacture of the semiconductor layers.
摘要翻译：本发明涉及一种辐射发射半导体二极管，特别是激光二极管，其有源层（3）包括II-V混合晶体，其中各种元素，例如III族元素可以以有序或无序的方式存在。这样的混晶是InGaP的发光低于1μm。在已知的二极管中，抑制了灾难性的光学降解，因为有源层（3）在有源区（3A）中具有有序分布，并且位于出射表面附近的被动区域（3B）中的元件的无序分布）。已知的二极管具有低效率和高启动电流。在根据本发明的二极管中，不同元件的分布在有源区（3A）中是无序的，而无源区（3B）是通过有源层（3）的局部混合形成的。这种二极管令人惊奇地具有高效率和低启动电流，显示出非常少的所述降解倾向，并且另外非常容易制造。因此，本发明还涉及制造这种二极管的方法。所述无序分布例如通过高生长温度实现，而所述混合通过例如Zn或Si的局部扩散来实现。混合可以在制造半导体层期间或之后进行。

2. 发明授权

US4359776A Device for generating or amplifying coherent electromagnetic radiation, and method of manufacturing the device 失效
标题翻译：用于产生或放大相干电磁辐射的装置及其制造方法
公开(公告)号：US4359776A
公开(公告)日：1982-11-16
申请号：US49778
申请日：1979-06-18
申请人： Gerard A. Acket , Peter J. de Waard , Giok D. Khoe , Gijsbrecht C. Wirtz , Tullio E. Rozzi
发明人： Gerard A. Acket , Peter J. de Waard , Giok D. Khoe , Gijsbrecht C. Wirtz , Tullio E. Rozzi
IPC分类号： H01S5/042 , H01S5/10 , H01S5/12 , H01S5/20 , H01S3/19
CPC分类号： H01S5/20 , H01S5/10 , H01S5/0425 , H01S5/0654 , H01S5/1228 , H01S5/2059
摘要： A semiconductor laser/amplifier is disclosed in which the radiation oscillates only in one longitudinal mode. According to the invention this is achieved by a strip-shaped active region which exhibits periodic variations in amplification (and preferably also in the amplification profile) in its longitudinal direction over at least a part of its length. The period of the amplification variation is at least ten times the wavelength of the radiation.
摘要翻译：公开了一种半导体激光器/放大器，其中辐射仅在一个纵向模式中振荡。根据本发明，这通过条形有源区域实现，该带状有源区域在其长度的至少一部分上在其纵向方向上展现出周期性的扩增变化（并且优选地在放大图中）。放大变化的周期至少是辐射波长的十倍。

3. 发明授权

US5574743A Semiconductor diode laser having improved performance and method of manufacturing same 失效
标题翻译：具有改进性能的半导体二极管激光器及其制造方法
公开(公告)号：US5574743A
公开(公告)日：1996-11-12
申请号：US407931
申请日：1995-03-21
申请人： Carolus J. van der Poel , Gerard A. Acket , Marcel F. C. Schemmann
发明人： Carolus J. van der Poel , Gerard A. Acket , Marcel F. C. Schemmann
IPC分类号： H01S5/00 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01S5/2231 , H01S5/1039 , H01S5/204 , H01S5/22 , H01S5/223
摘要： Semiconductor diode lasers are used inter alia in optical disc systems, laser printers, bar code readers, and glass fibre communication systems. Lasers having a so-called (weakly) index-guided structure are very suitable for many applications inter alia because they can be manufactured comparatively simply and reliably. A disadvantage of the known (weakly) index-guided laser is that the so-called P-I (=optical power-current) characteristic thereof exhibits a kink. Such a kink limits the use of the laser to a relatively low optical power. According to the invention, such a (weakly) index-guided laser has a resonance cavity with a length for which the optical power at which a kink occurs in the P-I characteristic is a maximum. It was a surprise to find that the occurrence of a kink in the P-I curve of such a (weakly) index-guided laser depends on the length of the resonance cavity. Very surprising is the appearance of a maximum value in this kink power as a function of the length of the resonance cavity. Equally surprising is the occurrence of a series of such maxima, which are substantially equally high, and which are formed by the crests of a sawtooth curve with a very steep flank at the rising edge to each maximum. As a result, the laser length may be optimized not only in relation to the occurrence of kinks in the P-I characteristic but also in relation to other properties. The invention also relates to a method of manufacturing a laser according to the invention, which preferably includes a ridge waveguide structure.
摘要翻译：半导体二极管激光器尤其用于光盘系统，激光打印机，条形码读取器和玻璃纤维通信系统中。具有所谓（弱）折射率引导结构的激光器特别适用于许多应用，因为它们可以相对简单且可靠地制造。已知（弱）折射率引导激光器的缺点在于其所谓的P-I（=光功率 - 电流）特性表现为扭结。这样的扭结将激光器的使用限制在相对低的光功率。根据本发明，这种（弱）折射率引导激光器具有谐振腔，其具有在P-I特性中发生扭结的光功率为最大的长度。令人吃惊的是，发现在这种（弱）折射率引导激光器的P-I曲线中出现扭结，取决于谐振腔的长度。非常令人惊讶的是，这个扭结功率的最大值的出现是谐振腔长度的函数。同样令人惊讶的是，一系列这样的最大值的出现是基本上同样高的，并且它们由在上升沿到每个最大值的具有非常陡峭的侧面的锯齿曲线的波峰形成。结果，激光长度不仅可以相对于P-I特性中的扭结的发生而且与其它特性有关。本发明还涉及根据本发明的制造激光器的方法，其优选地包括脊形波导结构。

4. 发明授权

US5956359A Semiconductor diode laser and method of manufacturing same 失效
标题翻译：半导体二极管激光器及其制造方法
公开(公告)号：US5956359A
公开(公告)日：1999-09-21
申请号：US670260
申请日：1996-06-14
申请人： Alfred R. Adams , Alistair T. Meney , James R. Downes , Adriaan Valster , Gerard A. Acket
发明人： Alfred R. Adams , Alistair T. Meney , James R. Downes , Adriaan Valster , Gerard A. Acket
IPC分类号： H01S5/00 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34326
摘要： The invention relates to a laser with a multi quantum well active layer in which a portion of the quantum well and barrier layers is provided with a compression stress, while another portion is provided with an oppositely directed tensile stress. Said stresses are overcompensated such that the net stress is a tensile stress. Preferably, the laser comprises one or several quantum well layers with a compression stress and a number of barrier layers with an excess tensile stress.
摘要翻译：本发明涉及一种具有多量子阱活性层的激光器，其中量子阱和阻挡层的一部分具有压缩应力，而另一部分具有相反方向的拉伸应力。所述应力被过度补偿，使得净应力是拉伸应力。优选地，激光器包括具有压缩应力的一个或多个量子阱层和具有过量拉伸应力的多个阻挡层。

5. 发明授权

US4137122A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4137122A
公开(公告)日：1979-01-30
申请号：US795733
申请日：1977-05-11
申请人： Gerard A. Acket
发明人： Gerard A. Acket
IPC分类号： H01L33/00 , H01L21/205 , H01L21/66 , G01N21/02
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/0251 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S148/102 , Y10S148/162
摘要： The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the composition of the mixture is determined during the deposition by means of measurement of the thermal emission.
摘要翻译：本发明涉及一种制造半导体器件的方法，其中由至少两个半导体材料构成并具有小于衬底的能隙的化合物的化合物外延沉积在衬底上。根据本发明，通过测量热发射，在沉积期间确定混合物的组成。

6. 发明授权

US5812578A Radiation-emitting index-guided semiconductor diode 失效
标题翻译：辐射发射指数半导体二极管
公开(公告)号：US5812578A
公开(公告)日：1998-09-22
申请号：US491201
申请日：1995-06-16
申请人： Marcel F. C. Schemmann , Carolus J. Van Der Poel , Gerard A. Acket
发明人： Marcel F. C. Schemmann , Carolus J. Van Der Poel , Gerard A. Acket
IPC分类号： H01L33/30 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S3/19
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/204 , H01S5/221 , H01S5/222 , H01S5/3215
摘要： A radiation-emitting semiconductor diode, especially a laser having a first and a second cladding layer, an active layer and a mesa which comprises at least the second cladding layer and which lies recessed in a third cladding layer. The second cladding layer comprises a first sub-layer which adjoins the active layer and is comparatively thin, and a second sub-layer which adjoins the first sub-layer and is comparatively thick, while the refractive index of the first sub-layer is lower than that of the second sub-layer. Confinement in the thickness direction of charge carriers and radiation is good in such a diode, while the third cladding layer has a relatively high refractive index (giving a relatively low bandgap). Thus, the third cladding layer has a relatively low aluminium content, while providing good lateral confinement.
摘要翻译：辐射发射半导体二极管，特别是具有第一和第二覆层的激光器，有源层和台面，其至少包括第二覆层并且凹陷在第三覆层中。第二包层包括邻接有源层并且相对较薄的第一子层和邻接第一子层并且相对较厚的第二子层，而第一子层的折射率较低比第二子层的。在这种二极管中，电荷载流子和辐射的厚度方向的限制是良好的，而第三覆层具有相对较高的折射率（给出相对较低的带隙）。因此，第三覆层具有相对低的铝含量，同时提供良好的侧向约束。

7. 发明授权

US4904068A Optical device with phase-locked diodelaser array 失效
标题翻译：具有锁相二极管阵列的光学器件
公开(公告)号：US4904068A
公开(公告)日：1990-02-27
申请号：US162828
申请日：1988-03-02
申请人： Kimio Tatsuno , Carolus J. van der Poel , Gerard A. Acket
发明人： Kimio Tatsuno , Carolus J. van der Poel , Gerard A. Acket
IPC分类号： G02B27/09 , G11B7/0025 , G11B7/125 , G11B7/135 , G11B7/14
CPC分类号： G02B19/0057 , G02B19/0014 , G02B27/09 , G02B27/0966 , G02B27/0972 , G11B7/0025 , G11B7/127 , G11B7/1356 , G11B7/1381 , G11B7/1398 , G11B7/14
摘要： An optical device includes a phase-locked diodelaser array (10), a collimator lens (17), and behind the collimator lens a prism system (30, 34) of at least one prism to broaden the far field radiation pattern in the lateral plane (XY) and a spatial filter (19) to select a favored mode. The laser radiation is concentrated into a single, round and diffraction limited spot (V).

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