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1. 发明授权

US5299216A Radiation-emitting semiconductor diode 失效
标题翻译：辐射发射半导体二极管
公开(公告)号：US5299216A
公开(公告)日：1994-03-29
申请号：US982216
申请日：1992-11-25
申请人： Carolus J. van der Poel , Adriaan Valster , Michael J. B. Boermans
发明人： Carolus J. van der Poel , Adriaan Valster , Michael J. B. Boermans
IPC分类号： H01L33/00 , H01L33/30 , H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/025
CPC分类号： H01L33/30 , H01L33/0025 , H01S5/32325 , H01S5/20 , H01S5/3201
摘要： Radiation-emitting semiconductor diodes are used inter alia in information processing systems as diode lasers or LEDs. Such a radiation-emitting semiconductor diode including an active layer situated between two cladding layers, which layers each include a mixed crystal of III-V semiconductor materials, atoms of different elements, often having a certain degree of ordering, being present on at least one sublattice. An example is an InGaP/InAlGaP diode laser which emits at 670 nm and is highly suitable for various applications. There is a particular demand for diodes which have a high maximum operating temperature at a given wavelength. According to the invention, the composition of the semiconductor material of the active layer is so chosen that this layer has a compression strain, while the atoms of the different elements have a less orderly distribution at least in the semiconductor material of the active layer. This strongly reduces the starting current, while the emission wavelength remains substantially unchanged. In a preferred embodiment, the distribution in the semiconductor materials of the cladding layers is also less orderly, which improves the confinement and thus the temperature dependence characteristics of the starting current. The maximum operating temperature of diode lasers according to the invention is considerably increased owing to a low starting current and a low temperature dependence of this starting current.
摘要翻译：辐射发射半导体二极管尤其用作信息处理系统中的二极管激光器或LED。这种辐射发射半导体二极管包括位于两个包层之间的有源层，该层各自包含III-V族半导体材料的混合晶体，通常具有一定程度的排序的不同元素的原子存在于至少一个子格子例如，InGaP / InAlGaP二极管激光器在670nm处发射并且非常适用于各种应用。特别要求在给定波长下具有高的最高工作温度的二极管。根据本发明，有源层的半导体材料的组成被选择为使得该层具有压缩应变，而不同元素的原子至少在有源层的半导体材料中具有较少的有序分布。这大大降低了启动电流，而发射波长基本保持不变。在优选实施例中，包覆层的半导体材料中的分布也不太有序，这改善了起始电流的约束和温度依赖特性。由于起动电流低以及起动电流的低温依赖性，本发明的二极管激光器的最大工作温度显着增加。

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