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1. 发明授权

US07189664B2 Method for producing hydrogenated silicon-oxycarbide films 有权
标题翻译：氢化硅 - 碳氧化物薄膜的制造方法
公开(公告)号：US07189664B2
公开(公告)日：2007-03-13
申请号：US10543672
申请日：2004-01-26
申请人： Mark Jon Loboda , Byung Keun Hwang
发明人： Mark Jon Loboda , Byung Keun Hwang
IPC分类号： H01L21/469
CPC分类号： C23C16/30
摘要： A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
摘要翻译：一种具有低介电常数的氢化硅碳化氢（H：SiOC）薄膜的制造方法。该方法包括使用等离子体辅助聚合反应含有至少一个应变硅键的环状硅烷化合物以制备膜。所得膜可用于形成半导体器件。

2. 发明授权

US5989983A Method of fabricating and curing spin-on-glass layers by electron beam irradiation 失效
标题翻译：通过电子束照射制造和固化旋涂玻璃层的方法
公开(公告)号：US5989983A
公开(公告)日：1999-11-23
申请号：US921621
申请日：1997-08-27
申请人： Ju-seon Goo , Ji-hyun Choi , Byung-keun Hwang , Hae-jeong Lee
发明人： Ju-seon Goo , Ji-hyun Choi , Byung-keun Hwang , Hae-jeong Lee
IPC分类号： H01L21/3205 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/322
CPC分类号： H01L21/02134 , H01L21/02282 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3124 , H01L21/316 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76801
摘要： An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500.degree. C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.
摘要翻译：可以通过在微电子衬底上旋转旋涂玻璃（SOG）层并通过用电子束照射SOG层固化SOG层来在微电子衬底上制造绝缘层。可以在将基底加热到低于约500℃的温度的同时进行辐照。还可以提供下层和/或上覆盖层。或者，不是照射SOG层，而是可以照射上覆盖层。

3. 发明授权

US5866476A Methods for forming moisture blocking layers 失效
标题翻译：形成防潮层的方法
公开(公告)号：US5866476A
公开(公告)日：1999-02-02
申请号：US826483
申请日：1997-03-27
申请人： Ji-hyun Choi , Hae-Jeong Lee , Byung-Keun Hwang , Ju-Son Gou
发明人： Ji-hyun Choi , Hae-Jeong Lee , Byung-Keun Hwang , Ju-Son Gou
IPC分类号： H01L21/768 , H01L21/31 , H01L21/314 , H01L21/316 , H01L23/00 , H01L23/522 , H01L23/532
CPC分类号： H01L23/564 , H01L21/02134 , H01L21/02282 , H01L21/0234 , H01L21/02362 , H01L21/316 , H01L21/31612 , H01L23/5329 , H01L2924/0002
摘要： A method for forming an insulating layer for a microelectronic device includes the steps of forming a conductive pattern on a surface of a microelectronic substrate, and forming a spin-on-glass layer on the surface of the microelectronic substrate covering the conductive pattern. The spin-on-glass layer is baked at a temperature in the range of 400.degree. C. to 750.degree. C., and a moisture blocking layer is formed on the baked spin-on-glass layer. By reducing moisture absorbed from the air into the spin-on-glass layer, a relatively low etch rate and a relatively low dielectric constant can be maintained for the spin-on-glass layer. Related structures are also discussed.
摘要翻译：用于形成微电子器件绝缘层的方法包括以下步骤：在微电子衬底的表面上形成导电图案，并在覆盖导电图案的微电子衬底的表面上形成旋涂玻璃层。旋涂玻璃层在400℃至750℃的温度范围内烘烤，并在烘烤的旋涂玻璃层上形成防潮层。通过减少从空气吸收到自旋玻璃层中的水分，可以保持相对低的蚀刻速率和相对低的介电常数，用于旋涂玻璃层。还讨论了相关结构。

4. 发明申请

US20110155956A1 Fibers Including Nanoparticles And A Method Of Producing The Nanoparticles 审中-公开
标题翻译：包括纳米颗粒的纤维和生产纳米颗粒的方法
公开(公告)号：US20110155956A1
公开(公告)日：2011-06-30
申请号：US13061214
申请日：2009-08-19
申请人： Muhammad Ather Ashraf , Byung Keun Hwang , Bonnie J. Ludwig
发明人： Muhammad Ather Ashraf , Byung Keun Hwang , Bonnie J. Ludwig
IPC分类号： C09K11/06 , B29C47/00 , B29C71/00 , G02B1/10 , B82Y40/00 , B82Y20/00
CPC分类号： C04B35/6268 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/907 , C01B32/956 , C01B33/021 , C04B35/6224 , C04B35/62281 , C04B35/62675 , C04B2235/3418 , C04B2235/3826 , C04B2235/422 , C04B2235/483 , C04B2235/5264 , C04B2235/5454 , C04B2235/9661 , D01F6/94
摘要： A method produces nanoparticles by electrospinning a silicon composition having at least one silicon atom. The electrospinning of the silicon composition forms fibers. The fibers are pyrolyzed to produce the nanoparticles. The nanoparticles have excellent photo-luminescent properties and are suitable for use in many different applications.
摘要翻译：一种方法是通过静电纺丝具有至少一个硅原子的硅组合物来生产纳米颗粒。硅组合物的静电纺丝形成纤维。纤维被热解以产生纳米颗粒。纳米颗粒具有优异的光致发光性能，适用于许多不同的应用。

5. 发明授权

US6057251A Method for forming interlevel dielectric layer in semiconductor device using electron beams 有权
标题翻译：使用电子束在半导体器件中形成层间电介质层的方法
公开(公告)号：US6057251A
公开(公告)日：2000-05-02
申请号：US164938
申请日：1998-10-01
申请人： Ju-seon Goo , Seong-ho Kim , Hae-jeong Lee , Byung-keun Hwang
发明人： Ju-seon Goo , Seong-ho Kim , Hae-jeong Lee , Byung-keun Hwang
IPC分类号： H01L21/31 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/768
CPC分类号： H01L21/02362 , H01L21/02129 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/3105 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/76825 , H01L21/76829 , H01L21/31053
摘要： A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and approximately 500.degree. C. for a predetermined time, using an electron beam radiator, to densify the layer.
摘要翻译：一种使用电子束稳定化学气相沉积（CVD）工艺形成的层间电介质层的方法。在半导体衬底上形成CVD氧化物层。使用电子束辐射器在约室温至约500℃的温度下用电子束辐射CVD氧化物层以致密化层。

6. 发明授权

US5629238A Method for forming conductive line of semiconductor device 失效
标题翻译：形成半导体器件导线的方法
公开(公告)号：US5629238A
公开(公告)日：1997-05-13
申请号：US557534
申请日：1995-11-14
申请人： Ji-hyun Choi , Hong-jae Shin , Byung-keun Hwang , U-in Chung
发明人： Ji-hyun Choi , Hong-jae Shin , Byung-keun Hwang , U-in Chung
IPC分类号： H01L21/3205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/283
CPC分类号： H01L21/76831 , H01L21/76877
摘要： A method for forming a conductive line uses a fluorine doped oxide layer as an insulating layer between conductive lines. The method comprises the steps of: (a) forming a fluorine doped oxide layer on a semiconductor substrate on which a lower structure is formed; (b) etching the oxide layer of the region where a conductive line is to be formed, thereby forming a trench; (c) forming an insulating layer on the overall surface of the resultant substrate; depositing conductive material on the resultant substrate; and (e) etching back the conductive material so that the conductive material is left on the trench only, thereby forming a conductive line. In this method, the conductive line is formed of aluminum-containing material and the insulating layer is formed of silicon dioxide. In the present invention, the insulating layer is interposed between the fluorine doped oxide layer and the aluminum-containing conductive line and thus the conductive line is free from corrosion.
摘要翻译：形成导线的方法使用氟掺杂氧化物层作为导线之间的绝缘层。该方法包括以下步骤：（a）在形成下部结构的半导体衬底上形成氟掺杂氧化物层; （b）蚀刻要形成导电线的区域的氧化物层，从而形成沟槽; （c）在所得基板的整个表面上形成绝缘层; 在所得基板上沉积导电材料; 和（e）蚀刻导电材料，使得导电材料仅留在沟槽上，从而形成导电线。在该方法中，导电线由含铝材料形成，绝缘层由二氧化硅形成。在本发明中，绝缘层介于氟掺杂氧化物层和含铝导电线之间，因此导电线无腐蚀。

7. 发明授权

US06984594B2 Deposition method of insulating layers having low dielectric constant of semiconductor devices 有权
标题翻译：具有低介电常数半导体器件的绝缘层的沉积方法
公开(公告)号：US06984594B2
公开(公告)日：2006-01-10
申请号：US10150480
申请日：2002-05-17
申请人： Sung-Hoon Yang , Glenn A. Cerny , Kyuha Chung , Byung-Keun Hwang , Wan-Shick Hong
发明人： Sung-Hoon Yang , Glenn A. Cerny , Kyuha Chung , Byung-Keun Hwang , Wan-Shick Hong
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/401 , G02F1/1362 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.
摘要翻译：本发明涉及一种用于气相沉积低介电绝缘膜的方法，更具体地说涉及一种低介电绝缘膜的气相淀积工艺，可以显着提高蒸镀速度，同时保持低介电绝缘膜的性能，从而解决寄生实现高开口率结构的电容问题，并且可以通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时减少处理时间，从而形成用于半导体器件的保护膜。

8. 发明授权

US06667553B2 H:SiOC coated substrates 有权
公开(公告)号：US06667553B2
公开(公告)日：2003-12-23
申请号：US09990000
申请日：2001-11-21
申请人： Glenn Allen Cerny , Byung Keun Hwang , Mark Jon Loboda
发明人： Glenn Allen Cerny , Byung Keun Hwang , Mark Jon Loboda
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/31633
摘要： This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

9. 发明授权

US06372672B1 Method of forming a silicon nitride layer in a semiconductor device 有权
标题翻译：在半导体器件中形成氮化硅层的方法
公开(公告)号：US06372672B1
公开(公告)日：2002-04-16
申请号：US09478064
申请日：2000-01-05
申请人： Do-Hyung Kim , Ju-Bum Lee , Byung-Keun Hwang
发明人： Do-Hyung Kim , Ju-Bum Lee , Byung-Keun Hwang
IPC分类号： H01L2131
CPC分类号： H01L21/3185 , C23C16/345 , H01L21/0332
摘要： A method of forming a silicon nitride layer in a semiconductor device manufacturing process. The silicon nitride layer (SixNyHz) is formed by PE-CVD technique at low temperature to have at most 0.35 hydrogen composition. The resulting silicon nitride layer has substantially no Si—H bonding as compared with a silicon nitride layer formed at high temperature, thereby reducing thermal stress variation during annealing. The resulting silicon nitride layer exhibits reduced thermal stress variation before and after deposition, preventing a popping phenomenon and reducing the stress applied to the underlying layer.
摘要翻译：一种在半导体器件制造工艺中形成氮化硅层的方法。氮化硅层（SixNyHz）通过PE-CVD技术在低温下形成，具有至多0.35个氢组成。与在高温下形成的氮化硅层相比，所得到的氮化硅层基本上不具有Si-H键，从而降低退火时的热应力变化。所得到的氮化硅层在沉积之前和之后表现出降低的热应力变化，防止弹出现象并降低施加到下层的应力。

10. 发明授权

US06337282B2 Method for forming a dielectric layer 有权
标题翻译：形成电介质层的方法
公开(公告)号：US06337282B2
公开(公告)日：2002-01-08
申请号：US09364053
申请日：1999-07-30
申请人： Ju-Wan Kim , Byung-Keun Hwang , Sung-Jin Kim , Jue-Goo Lee , Chang-Hyun Cho , Gwan-Hyeob Koh
发明人： Ju-Wan Kim , Byung-Keun Hwang , Sung-Jin Kim , Jue-Goo Lee , Chang-Hyun Cho , Gwan-Hyeob Koh
IPC分类号： H01L21311
CPC分类号： H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31111 , H01L21/31612 , H01L21/31625 , H01L21/3185
摘要： A dielectric layer is formed by depositing a first dielectric layer above a semiconductor substrate including recessed regions, etching the first dielectric layer to remove any voids and to lower the aspect ratio of the recessed regions, and depositing a second dielectric layer on the first dielectric layer in the recessed regions. The method is particularly useful when the aspect ratios are high for recessed regions formed between patterns.
摘要翻译：通过在包括凹陷区域的半导体衬底上沉积第一电介质层，蚀刻第一电介质层以除去任何空隙并降低凹陷区域的纵横比，并在第一介电层上沉积第二电介质层，形成电介质层在凹陷区域。当在图案之间形成的凹陷区域的纵横比高时，该方法特别有用。

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