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1. 发明授权

US5629238A Method for forming conductive line of semiconductor device 失效
标题翻译：形成半导体器件导线的方法
公开(公告)号：US5629238A
公开(公告)日：1997-05-13
申请号：US557534
申请日：1995-11-14
申请人： Ji-hyun Choi , Hong-jae Shin , Byung-keun Hwang , U-in Chung
发明人： Ji-hyun Choi , Hong-jae Shin , Byung-keun Hwang , U-in Chung
IPC分类号： H01L21/3205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/283
CPC分类号： H01L21/76831 , H01L21/76877
摘要： A method for forming a conductive line uses a fluorine doped oxide layer as an insulating layer between conductive lines. The method comprises the steps of: (a) forming a fluorine doped oxide layer on a semiconductor substrate on which a lower structure is formed; (b) etching the oxide layer of the region where a conductive line is to be formed, thereby forming a trench; (c) forming an insulating layer on the overall surface of the resultant substrate; depositing conductive material on the resultant substrate; and (e) etching back the conductive material so that the conductive material is left on the trench only, thereby forming a conductive line. In this method, the conductive line is formed of aluminum-containing material and the insulating layer is formed of silicon dioxide. In the present invention, the insulating layer is interposed between the fluorine doped oxide layer and the aluminum-containing conductive line and thus the conductive line is free from corrosion.
摘要翻译：形成导线的方法使用氟掺杂氧化物层作为导线之间的绝缘层。该方法包括以下步骤：（a）在形成下部结构的半导体衬底上形成氟掺杂氧化物层; （b）蚀刻要形成导电线的区域的氧化物层，从而形成沟槽; （c）在所得基板的整个表面上形成绝缘层; 在所得基板上沉积导电材料; 和（e）蚀刻导电材料，使得导电材料仅留在沟槽上，从而形成导电线。在该方法中，导电线由含铝材料形成，绝缘层由二氧化硅形成。在本发明中，绝缘层介于氟掺杂氧化物层和含铝导电线之间，因此导电线无腐蚀。

2. 发明授权

US6117785A Multiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereon 失效
标题翻译：用于在微电子器件中形成接触孔的多种蚀刻方法，包括其上的SOG层和覆盖层
公开(公告)号：US6117785A
公开(公告)日：2000-09-12
申请号：US891360
申请日：1997-07-10
申请人： Hae-jeong Lee , Ji-hyun Choi , Byung-keun Hwang , Ju-seon Goo
发明人： Hae-jeong Lee , Ji-hyun Choi , Byung-keun Hwang , Ju-seon Goo
IPC分类号： H01L21/3213 , H01L21/28 , H01L21/311 , H01L21/768 , H01L21/31
CPC分类号： H01L21/76804 , H01L21/31144
摘要： A method for forming a microelectronic device includes the steps of forming a spin-on-glass layer on a microelectronic substrate, and forming a capping layer on the spin-on-glass layer opposite the substrate. A masking layer is formed on the capping layer opposite the substrate wherein the masking layer exposes portions of the capping layer and the spin-on-glass layer. The exposed portions of said capping layer and the spin-on-glass layer are etched using the masking layer as an etch mask to thereby form a contact hole through the capping layer and the spin-on-glass layer wherein protruding edge portions of the capping layer extend beyond the spin-on-glass layer adjacent the contact hole. The mask layer is removed, and the protruding edge portions of the capping layer are removed from adjacent the contact hole.
摘要翻译：一种形成微电子器件的方法包括以下步骤：在微电子衬底上形成旋涂玻璃层，并在与衬底相对的旋转玻璃层上形成覆盖层。在与衬底相对的覆盖层上形成掩模层，其中掩模层露出覆盖层和旋涂玻璃层的部分。使用掩模层作为蚀刻掩模蚀刻所述覆盖层和旋涂玻璃层的暴露部分，从而通过覆盖层和旋涂玻璃层形成接触孔，其中封盖的突出边缘部分层延伸超过接触孔附近的旋涂玻璃层。去除掩模层，并且覆盖层的突出边缘部分从邻近的接触孔去除。

3. 发明授权

US5989983A Method of fabricating and curing spin-on-glass layers by electron beam irradiation 失效
标题翻译：通过电子束照射制造和固化旋涂玻璃层的方法
公开(公告)号：US5989983A
公开(公告)日：1999-11-23
申请号：US921621
申请日：1997-08-27
申请人： Ju-seon Goo , Ji-hyun Choi , Byung-keun Hwang , Hae-jeong Lee
发明人： Ju-seon Goo , Ji-hyun Choi , Byung-keun Hwang , Hae-jeong Lee
IPC分类号： H01L21/3205 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/322
CPC分类号： H01L21/02134 , H01L21/02282 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3124 , H01L21/316 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L21/76801
摘要： An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500.degree. C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.
摘要翻译：可以通过在微电子衬底上旋转旋涂玻璃（SOG）层并通过用电子束照射SOG层固化SOG层来在微电子衬底上制造绝缘层。可以在将基底加热到低于约500℃的温度的同时进行辐照。还可以提供下层和/或上覆盖层。或者，不是照射SOG层，而是可以照射上覆盖层。

4. 发明授权

US5866476A Methods for forming moisture blocking layers 失效
标题翻译：形成防潮层的方法
公开(公告)号：US5866476A
公开(公告)日：1999-02-02
申请号：US826483
申请日：1997-03-27
申请人： Ji-hyun Choi , Hae-Jeong Lee , Byung-Keun Hwang , Ju-Son Gou
发明人： Ji-hyun Choi , Hae-Jeong Lee , Byung-Keun Hwang , Ju-Son Gou
IPC分类号： H01L21/768 , H01L21/31 , H01L21/314 , H01L21/316 , H01L23/00 , H01L23/522 , H01L23/532
CPC分类号： H01L23/564 , H01L21/02134 , H01L21/02282 , H01L21/0234 , H01L21/02362 , H01L21/316 , H01L21/31612 , H01L23/5329 , H01L2924/0002
摘要： A method for forming an insulating layer for a microelectronic device includes the steps of forming a conductive pattern on a surface of a microelectronic substrate, and forming a spin-on-glass layer on the surface of the microelectronic substrate covering the conductive pattern. The spin-on-glass layer is baked at a temperature in the range of 400.degree. C. to 750.degree. C., and a moisture blocking layer is formed on the baked spin-on-glass layer. By reducing moisture absorbed from the air into the spin-on-glass layer, a relatively low etch rate and a relatively low dielectric constant can be maintained for the spin-on-glass layer. Related structures are also discussed.
摘要翻译：用于形成微电子器件绝缘层的方法包括以下步骤：在微电子衬底的表面上形成导电图案，并在覆盖导电图案的微电子衬底的表面上形成旋涂玻璃层。旋涂玻璃层在400℃至750℃的温度范围内烘烤，并在烘烤的旋涂玻璃层上形成防潮层。通过减少从空气吸收到自旋玻璃层中的水分，可以保持相对低的蚀刻速率和相对低的介电常数，用于旋涂玻璃层。还讨论了相关结构。

5. 发明申请

US20060161079A1 Method and apparatus for monitoring human activity pattern 有权
标题翻译：监测人类活动模式的方法和装置
公开(公告)号：US20060161079A1
公开(公告)日：2006-07-20
申请号：US11332586
申请日：2006-01-17
申请人： Ji-hyun Choi , Kun-soo Shin , Jin-sang Hwang , Hyun-tai Hwang , Wan-taek Han
发明人： Ji-hyun Choi , Kun-soo Shin , Jin-sang Hwang , Hyun-tai Hwang , Wan-taek Han
IPC分类号： A61B5/103 , A61B5/117
CPC分类号： A61B5/1118 , A61B5/1117 , A61B5/4866 , A61B2562/0219
摘要： A method and apparatus for monitoring a human activity pattern irrespective of the wearing position of the sensor unit by a user and a direction of the sensor unit are provided. The method for monitoring an inertia movement signal according to a movement of a user using a sensor unit attached to the user; detecting a direction of the sensor unit from the inertia movement signal; detecting a wearing location of the sensor unit by using acceleration and direction; determining the activity pattern of the user from inertia sensors; and delivering physical activity data corresponding to at least one caloric consumption, number of steps, and movement distance.
摘要翻译：提供了一种用于监视人类活动模式的方法和装置，而不管使用者的传感器单元的磨损位置和传感器单元的方向如何。根据用户使用附接到用户的传感器单元的移动来监测惯性运动信号的方法; 从所述惯性运动信号检测所述传感器单元的方向; 通过加速度和方向检测传感器单元的磨损位置; 从惯性传感器确定用户的活动模式; 以及递送对应于至少一种热量消耗，步数和移动距离的体育活动数据。

6. 发明申请

US20060100533A1 Apparatus and method for measuring bio signals 审中-公开
标题翻译：用于测量生物信号的装置和方法
公开(公告)号：US20060100533A1
公开(公告)日：2006-05-11
申请号：US11267291
申请日：2005-11-07
申请人： Wan-taek Han , Hyung-sok Yeo , Ji-hyun Choi , Jin-sang Hwang , Jeong-whan Lee
发明人： Wan-taek Han , Hyung-sok Yeo , Ji-hyun Choi , Jin-sang Hwang , Jeong-whan Lee
IPC分类号： A61B5/02 , A61B5/04
CPC分类号： A61B5/04085 , A61B5/0006 , A61B5/0488
摘要： An apparatus and a method for measuring bio signals are provided. The apparatus includes a body, a plurality of electrodes, and a controller. The body is filled with predetermined packing material. The electrodes are positioned at an outermost portion of the body and touch the skin of a subject to measure bio signals from the subject. The controller is positioned inside of the body and connected with the electrodes to analyze the bio signals measured from the electrodes and output bio information of the subject.
摘要翻译：提供了用于测量生物信号的装置和方法。该装置包括主体，多个电极和控制器。身体充满预定的包装材料。电极定位在身体的最外侧部分并且接触受试者的皮肤以测量来自受试者的生物信号。控制器位于体内并与电极连接，以分析从电极测量的生物信号并输出对象的生物信息。

7. 发明授权

US5444026A Method for manufacturing semiconductor device by forming insulator-layer to suppress bubble formation 失效
标题翻译：通过形成绝缘体层以抑制气泡形成来制造半导体器件的方法
公开(公告)号：US5444026A
公开(公告)日：1995-08-22
申请号：US74761
申请日：1993-06-10
申请人： Chang-kyu Kim , Myeong-beom Lee , Ji-hyun Choi , Woo-in Joung , Young-jin Im , Won-joo Kim , Jin-gi Hong , Geung-won Kang
发明人： Chang-kyu Kim , Myeong-beom Lee , Ji-hyun Choi , Woo-in Joung , Young-jin Im , Won-joo Kim , Jin-gi Hong , Geung-won Kang
IPC分类号： H01L21/31 , H01L21/768 , H01L23/532 , H01L21/316
CPC分类号： H01L21/76838 , H01L21/76801 , H01L21/76828 , H01L21/76834 , H01L23/5329 , H01L2924/0002
摘要： The present invention forms a intermediate layer between a conductive layer and BPSG layer. In one embodiment, this intermediate layer is a buffer layer that absorbs excess P ions from the BPSG layer to suppress the formation of bubbles and thereby prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer. In the second embodiment the intermediate layer is a thin nitride layer, which prevents the conductive layer and BPSG layer from being in direct contact with each other to suppress the formation of bubbles and also prevent short circuits that may be caused due to the presence of bubbles in the BPSG layer.
摘要翻译：本发明在导电层和BPSG层之间形成中间层。在一个实施方案中，该中间层是从BPSG层吸收多余P离子以抑制气泡形成并从而防止由于BPSG层中气泡的存在而引起的短路的缓冲层。在第二实施例中，中间层是薄的氮化物层，其防止导电层和BPSG层彼此直接接触以抑制气泡的形成并且还防止由于气泡的存在而引起的短路在BPSG层。

8. 发明授权

US07723604B2 Apparatus and method for generating musical tone according to motion 有权
标题翻译：根据运动产生乐音的装置和方法
公开(公告)号：US07723604B2
公开(公告)日：2010-05-25
申请号：US11704303
申请日：2007-02-09
申请人： Won-chul Bang , Jun-il Sohn , Ji-hyun Choi , Eun-seok Choi , Dong-yoon Kim , Yeun-bae Kim
发明人： Won-chul Bang , Jun-il Sohn , Ji-hyun Choi , Eun-seok Choi , Dong-yoon Kim , Yeun-bae Kim
IPC分类号： G10H7/00
CPC分类号： G10H1/34 , G10H1/0041 , G10H2220/351 , G10H2220/395 , G10H2220/401 , G10H2230/015 , G10H2250/315
摘要： An apparatus and method to output a musical tone is disclosed. More particularly, disclosed is an apparatus and method to output a musical tone according to motion, which divides a space in which a terminal can move into a plurality of subspaces, and matches the subspaces with different musical tones, so that the terminal can output a musical tone matched with a specific subspace when the terminal has moved into the specific subspace.
摘要翻译：公开了输出乐音的装置和方法。更具体地，公开了一种根据运动输出乐音的装置和方法，其将终端可以移动到多个子空间中的空间进行分割，并且使具有不同乐音的子空间匹配，使得终端可以输出当终端移动到特定子空间时，音调与特定子空间相匹配。

9. 发明申请

US20070186759A1 Apparatus and method for generating musical tone according to motion 有权
标题翻译：根据运动产生乐音的装置和方法
公开(公告)号：US20070186759A1
公开(公告)日：2007-08-16
申请号：US11704303
申请日：2007-02-09
申请人： Won-chul Bang , Jun-il Sohn , Ji-hyun Choi , Eun-seok Choi , Dong-yoon Kim , Yeun-bae Kim
发明人： Won-chul Bang , Jun-il Sohn , Ji-hyun Choi , Eun-seok Choi , Dong-yoon Kim , Yeun-bae Kim
IPC分类号： G10H3/00
CPC分类号： G10H1/34 , G10H1/0041 , G10H2220/351 , G10H2220/395 , G10H2220/401 , G10H2230/015 , G10H2250/315
摘要： An apparatus and method to output a musical tone is disclosed. More particularly, disclosed is an apparatus and method to output a musical tone according to motion, which divides a space in which a terminal can move into a plurality of subspaces, and matches the subspaces with different musical tones, so that the terminal can output a musical tone matched with a specific subspace when the terminal has moved into the specific subspace.
摘要翻译：公开了输出乐音的装置和方法。更具体地，公开了一种根据运动输出乐音的装置和方法，其将终端可以移动到多个子空间中的空间进行分割，并且使具有不同乐音的子空间匹配，使得终端可以输出当终端已经进入特定子空间时，音调与特定子空间相匹配。

10. 发明授权

US6001696A Trench isolation methods including plasma chemical vapor deposition and lift off 失效
标题翻译：沟槽隔离方法，包括等离子体化学气相沉积和剥离
公开(公告)号：US6001696A
公开(公告)日：1999-12-14
申请号：US52453
申请日：1998-03-31
申请人： Chang-gyu Kim , Min-su Baek , Ji-hyun Choi
发明人： Chang-gyu Kim , Min-su Baek , Ji-hyun Choi
IPC分类号： H01L21/762 , H01L21/76 , H01L21/336
CPC分类号： H01L21/76224
摘要： Isolation methods for integrated circuits use plasma chemical vapor deposition of an insulating layer followed by lift-off to remove at least portions of the insulating layer. In particular, a lift-off layer is formed on an integrated circuit substrate. The lift-off layer and the integrated circuit substrate beneath the lift-off layer are etched to form a trench in the integrated circuit substrate. The trench defines a first region on one side of the trench and a second region that is narrower than the first region on the other side of the trench. Plasma chemical vapor deposition is then performed to form an insulating layer filling the trench, on the first region and on the second region, with the insulating layer on the first region being thicker than on the second region. The insulating layer is then etched to expose the lift-off layer in the second region. The lift-off layer is then lifted off from the first region. Isolation trenches so formed can have improved isolation characteristics and can be planarized with reduced dishing effects.
摘要翻译：用于集成电路的隔离方法使用绝缘层的等离子体化学气相沉积，然后剥离以去除绝缘层的至少一部分。特别地，在集成电路基板上形成剥离层。在剥离层下方的剥离层和集成电路基板被蚀刻以在集成电路基板中形成沟槽。沟槽限定在沟槽的一侧上的第一区域和比沟槽另一侧上的第一区域窄的第二区域。然后进行等离子体化学气相沉积以在第一区域和第二区域上形成填充沟槽的绝缘层，第一区域上的绝缘层比第二区域厚。然后蚀刻绝缘层以暴露第二区域中的剥离层。然后将剥离层从第一区域提起。如此形成的绝缘沟槽可以具有改进的隔离特性，并且可以通过减少的凹陷效应来平坦化。

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