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1. 发明授权

US07626846B2 Method and media for improving ferroelectric domain stability in an information storage device 失效
标题翻译：用于提高信息存储装置中铁电畴稳定性的方法和介质
公开(公告)号：US07626846B2
公开(公告)日：2009-12-01
申请号：US11778571
申请日：2007-07-16
申请人： Valluri Ramana Rao , Li-Peng Wang , Qing Ma , Byong Man Kim
发明人： Valluri Ramana Rao , Li-Peng Wang , Qing Ma , Byong Man Kim
IPC分类号： G11C11/22
CPC分类号： G11B9/02 , Y10S977/947
摘要： A media for an information storage device includes a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.
摘要翻译：用于信息存储装置的介质包括单晶硅衬底，在衬底上形成的外延单晶绝缘体的缓冲层，形成在缓冲层上的外延单晶导体的底电极层，形成在缓冲层上的铁电层形成在底部电极层上的外延单晶铁电材料，以及形成在铁电体层上的外延单晶材料的覆层。通常具有第一取向的偶极电荷存在于底电极层和铁电层之间的界面处，其中通常具有与第一取向相反的第二取向的偶极电荷存在于铁电层和覆层之间的界面处。

2. 发明授权

US06999346B2 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same 失效
公开(公告)号：US06999346B2
公开(公告)日：2006-02-14
申请号：US10774456
申请日：2004-02-10
申请人： In-kyeong Yoo , Byong-man Kim
发明人： In-kyeong Yoo , Byong-man Kim
IPC分类号： G11C13/07
CPC分类号： B82Y10/00 , G11C2216/08 , H01L21/28273 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

3. 发明授权

US06664123B2 Method for etching metal layer on a scale of nanometers 失效
公开(公告)号：US06664123B2
公开(公告)日：2003-12-16
申请号：US10029814
申请日：2001-12-28
申请人： Byong-man Kim , Soo-doo Chae , Hee-soon Chae , Won-il Ryu
发明人： Byong-man Kim , Soo-doo Chae , Hee-soon Chae , Won-il Ryu
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , B82Y40/00 , C23F4/00 , G11B9/10 , G11B9/14 , G11B9/1463 , G11B9/149 , H01J2237/31747
摘要： A method for etching a metal layer on a scale of nano meters, includes preparing a substrate on which a metal layer is formed, positioning a micro tip over the metal layer, generating an electron beam from the micro tip by applying a predetermined voltage between the metal layer and the micro tip, and etching the surface of the metal layer into a predetermined pattern with the electron beam. Accordingly, it is possible to form an etched pattern by applying a negative bias to a micro tip without applying a strong mechanical force to the micro tip, and heating/melting the metal layer with the use of an electron beam emitted from the micro tip which is negative-biased.

4. 发明授权

US06388268B1 Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor 失效
标题翻译：半导体YBCO器件和由AFM尖端局部转换的超导YBCO器件及其制造方法
公开(公告)号：US06388268B1
公开(公告)日：2002-05-14
申请号：US09670315
申请日：2000-09-26
申请人： Byong-man Kim , Insang Song
发明人： Byong-man Kim , Insang Song
IPC分类号： H01L2906
CPC分类号： H01L45/00 , G01Q60/40 , G01Q80/00 , H01L39/225 , Y10S505/702 , Y10S977/859
摘要： A semiconducting yttrium-barium-copper-oxygen(YBCO) device which locally converts a semiconducting YBCO film to a nonconducting YBCO film by a conductive atomic force microscope (AFM), a superconducting YBCO device which locally converts a superconducting YBCO film to nonsuperconducting YBCO by an AFM, and manufacturing methods thereof are provided. According to a method of manufacturing a semiconducting YBCO device or a superconducting YBCO device locally converted by an AFM tip, a voltage is applied to the local region of a semiconducting YBCO channel or a superconducting YBCO channel by an AFM tip. This can produce a nonconducting YBCO region or nonsuperconducting YBCO region to thereby manufacture a tunnel junction easily without any patterning process by microfabrication including photolithography and dry/wet etching.
摘要翻译：通过导电原子力显微镜（AFM）将半导体YBCO膜局部转换成不导电的YBCO膜的半导体钇钡钡氧（YBCO）器件，超导YBCO器件，其将超导YBCO膜局部转换为非超导YBCO，由提供AFM及其制造方法。根据制造由AFM尖端局部转换的半导体YBCO器件或超导YBCO器件的方法，通过AFM尖端将电压施加到半导体YBCO通道或超导YBCO通道的局部区域。这可以产生不导电的YBCO区域或非超导YBCO区域，从而通过微加工（包括光刻和干/湿蚀刻）容易地形成隧道结，而无需任何图案化工艺。

5. 发明授权

US06268273B1 Fabrication method of single electron tunneling device 有权
标题翻译：单电子隧穿装置的制造方法
公开(公告)号：US06268273B1
公开(公告)日：2001-07-31
申请号：US09714512
申请日：2000-11-17
申请人： Byong-man Kim , Jo-won Lee , Mi-young Kim , Moon-kyoung Kim
发明人： Byong-man Kim , Jo-won Lee , Mi-young Kim , Moon-kyoung Kim
IPC分类号： H01L214763
CPC分类号： H01L29/66439 , B82Y10/00 , B82Y30/00 , H01L29/7613 , Y10S438/927 , Y10S438/962 , Y10S438/979
摘要： A method of fabricating a single electron tunneling (SET) device, the method including forming a source electrode and a drain electrode a predetermined distance apart from each other on an insulating substrate, forming a metal layer having a thickness on the order of nanometers between the source and drain electrodes, and forming quantum dots between the source and drain electrodes due to the movement of metal atoms/ions within the metal layer caused by applying a predetermined voltage to the source and drain electrodes. In the manufacture of an SET device, quantum dots can be formed by a simple method instead of an self assembled monolayer (SAM) method or lithographic methods. Thus, SET devices fabricated in this way have no material dependency, and are also applicable to large scale integration (LSI) structures. Also, since quantum dots are obtained by deposition and electromigration, SET devices having the above-described advantages can be mass-produced.
摘要翻译：一种制造单电子隧道（SET）器件的方法，该方法包括在绝缘衬底上形成彼此相隔预定距离的源电极和漏电极，形成厚度约为数量级的金属层源极和漏极，以及由于通过向源极和漏极施加预定电压而在金属层内的金属原子/离子的移动，在源极和漏极之间形成量子点。在SET装置的制造中，可以通过简单的方法而不是自组装单层（SAM）方法或光刻方法来形成量子点。因此，以这种方式制造的SET器件没有材料依赖性，并且也适用于大规模集成（LSI）结构。此外，由于通过沉积和电迁移获得量子点，因此可以批量生产具有上述优点的SET器件。

6. 发明授权

US07964159B2 Nanotube-based sensors and probes 有权
标题翻译：基于纳米管的传感器和探头
公开(公告)号：US07964159B2
公开(公告)日：2011-06-21
申请号：US11177111
申请日：2005-07-08
申请人： Haim H. Bau , Byong Man Kim , Michael A. Riegelman , Yury Gogotsi
发明人： Haim H. Bau , Byong Man Kim , Michael A. Riegelman , Yury Gogotsi
IPC分类号： G01N21/01 , G01N21/75 , G01N33/48
CPC分类号： G01N33/54373 , B82Y15/00 , B82Y20/00 , G02B21/34 , Y10S977/92 , Y10S977/924
摘要： Described herein are novel devices for the study of transport characteristics of complex or simple fluids, interactions among molecules in suspension, interactions between molecules in suspension and wall-bound molecules, and biochemical sensing devices made of reservoirs for fluid containment linked by a nanotubes. Also disclosed are methods of delivering medicaments and monitoring fluidic interactions of molecules or analytes.
摘要翻译：本文描述了用于研究复杂或简单流体的运输特性，悬浮分子之间的相互作用，悬浮液中的分子与壁结合分子之间的相互作用以及由用于通过纳米管连接的用于流体容纳的储存器的生化传感装置的新型装置。还公开了递送药物和监测分子或分析物的流体相互作用的方法。

7. 发明授权

US07407856B2 Method of manufacturing a memory device 失效
标题翻译：制造存储器件的方法
公开(公告)号：US07407856B2
公开(公告)日：2008-08-05
申请号：US11296510
申请日：2005-12-08
申请人： In-kyeong Yoo , Byong-man Kim
发明人： In-kyeong Yoo , Byong-man Kim
IPC分类号： H01L21/336
CPC分类号： B82Y10/00 , G11C2216/08 , H01L21/28273 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A method of manufacturing a memory device includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, forming an insulating layer on the active region, patterning the insulating layer to form first and second bit lines separated from and parallel to each other on the active region, forming a memory element for storing data in a nonvolatile state, wherein the memory element passes across the first and second bit lines, and forming a word line on the insulating layer and the memory element.
摘要翻译：一种制造存储器件的方法包括在衬底中限定场区域和有源区域，在场区域上形成场氧化物层，在有源区域上形成绝缘层，图案化绝缘层以形成第一和第二位线形成用于将数据存储在非易失性状态的存储元件，其中存储元件穿过第一和第二位线，并在绝缘层和存储元件上形成字线。

8. 发明授权

US06740925B2 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same 失效
标题翻译：包括具有RAM和ROM功能的单晶体管的存储器件及其操作和制造方法
公开(公告)号：US06740925B2
公开(公告)日：2004-05-25
申请号：US10041469
申请日：2002-01-10
申请人： In-kyeong Yoo , Byong-man Kim
发明人： In-kyeong Yoo , Byong-man Kim
IPC分类号： H01L2976
CPC分类号： B82Y10/00 , G11C2216/08 , H01L21/28273 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.
摘要翻译：提供了包括具有RAM和ROM功能的单个晶体管的存储器件及其操作和制造方法。存储器件包括形成在衬底上的单个晶体管。晶体管可以是具有带非易失性存储元件的栅极的存储晶体管，或者在晶体管和衬底之间提供非易失性存储元件。

9. 发明授权

US06687210B2 High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same 失效
标题翻译：使用电子发射的高密度信息存储装置和使用其的写入，读取和擦除信息的方法
公开(公告)号：US06687210B2
公开(公告)日：2004-02-03
申请号：US10090629
申请日：2002-03-06
申请人： In-kyeong Yoo , Won-bong Choi , Byong-man Kim
发明人： In-kyeong Yoo , Won-bong Choi , Byong-man Kim
IPC分类号： G11B700
CPC分类号： G11B11/08 , G11B9/08 , G11B13/00
摘要： A high-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same are provided. The high-density information storage apparatus includes a lower electrode, a photoconductive layer and a recording medium sequentially provided on the lower electrode, a conductive layer converting unit for making the photoconductive layer conductive, a data write and read unit for writing data to the recording medium or reading data from the recording medium, a data loss preventing unit for preventing loss of data during data write and read operations, and a power supply connected to the lower electrode and the data write and read unit, for supplying voltage necessary for reading and writing data.
摘要翻译：提供了使用电子发射的高密度信息存储装置和使用其的写入，读取和擦除信息的方法。高密度信息存储装置包括下电极，光电导层和顺序地设置在下电极上的记录介质，用于使光电导层导通的导电层转换单元，用于将数据写入记录的数据写入和读取单元介质或从记录介质读取数据，数据丢失防止单元，用于防止数据写入和读取操作期间的数据丢失，以及连接到下部电极和数据写入和读取单元的电源，用于提供读取所需的电压写数据

10. 发明授权

US06670670B2 Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same 有权
公开(公告)号：US06670670B2
公开(公告)日：2003-12-30
申请号：US10125597
申请日：2002-04-19
申请人： Soo-doo Chae , Byong-man Kim , Moon-kyung Kim , Hee-soon Chae , Won-il Ryu
发明人： Soo-doo Chae , Byong-man Kim , Moon-kyung Kim , Hee-soon Chae , Won-il Ryu
IPC分类号： H01L29788
CPC分类号： B82Y10/00 , G11C2216/08 , H01L21/28273 , H01L29/7888
摘要： A single electron memory device including quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same, wherein the single electron memory device includes a substrate on which a nano-scale channel region is formed between a source and a drain, and a gate lamination pattern including quantum dots on the channel region. The gate lamination pattern includes a lower layer formed on the channel region, a single electron storage medium storing a single electron tunneling through the lower layer formed on the lower layer, an upper layer including quantum dots formed on the single electron storage medium, and a gate electrode formed on the upper layer to be in contact with the quantum dots.

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