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1. 发明授权

US5525369A Method for metallizing through holes in thin film substrates, and resulting devices 失效
标题翻译：用于金属化薄膜基板中的孔的方法以及所得到的器件
公开(公告)号：US5525369A
公开(公告)日：1996-06-11
申请号：US152512
申请日：1993-11-16
申请人： Kim J. Blackwell , Pei C. Chen , Stephen E. Deliman , Allan R. Knoll , George J. Matarese , Richard D. Weale
发明人： Kim J. Blackwell , Pei C. Chen , Stephen E. Deliman , Allan R. Knoll , George J. Matarese , Richard D. Weale
IPC分类号： C23C14/04 , C23C14/20 , C23C14/54 , H01L21/48 , H05K3/40 , B05D5/12 , B05D3/12
CPC分类号： H05K3/4076 , C23C14/046 , C23C14/20 , C23C14/541 , H01L21/486 , Y10S428/901 , Y10T428/24917
摘要： A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.
摘要翻译：公开了一种将诸如铬和铜的薄晶种层气相沉积到例如聚酰亚胺薄膜基板中的通孔侧壁上的方法。该方法在制造诸如薄膜半导体芯片载体的装置中是有用的，其中安装在芯片载体的一个主表面上的半导体芯片电连接到接地平面和/或芯片的另一主表面上的电源导体载体通过一个或多个金属化通孔。

2. 发明授权

US5372848A Process for creating organic polymeric substrate with copper 失效
标题翻译：用铜制造有机聚合物基材的方法
公开(公告)号：US5372848A
公开(公告)日：1994-12-13
申请号：US996606
申请日：1992-12-24
申请人： Kim J. Blackwell , Luis J. Matienzo , Allan R. Knoll
发明人： Kim J. Blackwell , Luis J. Matienzo , Allan R. Knoll
IPC分类号： C23C14/14 , C23C14/20 , H01L21/60 , H05K3/16 , H05K3/38 , C23C16/00 , C23C14/00 , C25D3/38
CPC分类号： H05K3/16 , C23C14/205 , H05K3/38
摘要： A copper layer is coated onto an organic polymeric substrate in the presence of a gas containing nitrogen and a noble gas.
摘要翻译：在含有氮气和惰性气体的气体存在下，将铜层涂覆在有机聚合物基材上。

3. 发明授权

US5053104A Method of plasma etching a substrate with a gaseous organohalide compound 失效
标题翻译：用气体有机卤化物化合物等离子体蚀刻衬底的方法
公开(公告)号：US5053104A
公开(公告)日：1991-10-01
申请号：US443665
申请日：1989-11-29
申请人： Suryadevara V. Babu , Joseph G. Hoffarth , Allan R. Knoll , Walter E. Mlynko , John F. Rembetski , Kenneth D. Mack
发明人： Suryadevara V. Babu , Joseph G. Hoffarth , Allan R. Knoll , Walter E. Mlynko , John F. Rembetski , Kenneth D. Mack
IPC分类号： C09K13/00 , H01L21/306 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/02019 , C09K13/00 , H01L21/30621 , H01L21/3065 , H01L21/31116
摘要： A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value. When the above is repeatedly done a substantially higher average etch rate is obtained.
摘要翻译：公开了一种等离子体蚀刻工艺，其中待蚀刻的衬底首先暴露于含有挥发性有机卤化物的蚀刻剂气体。当蚀刻速率稳定时，蚀刻剂气体中的有机卤化物被氧代替，从而衬底的蚀刻速率立即增加到相当高的值。当重复上述操作时，获得了显着更高的平均蚀刻速率。

4. 发明授权

US06383401B1 Method of producing flex circuit with selectively plated gold 有权
标题翻译：用选择性镀金制造柔性电路的方法
公开(公告)号：US06383401B1
公开(公告)日：2002-05-07
申请号：US09607978
申请日：2000-06-30
申请人： Daniel P. Labzentis , Francesco F. Marconi , Allan R. Knoll , David J. Bajkowski
发明人： Daniel P. Labzentis , Francesco F. Marconi , Allan R. Knoll , David J. Bajkowski
IPC分类号： H01B1300
CPC分类号： H05K3/243 , H05K3/108 , H05K2203/0574
摘要： Disclosed is a method of producing a flexible circuit board having gold selectively plated on only desired elements of the conductive circuits. These desired elements typically are attachment sites, such as wire bond pads or ball grid array pads, for semiconductor chips. This method eliminates the requirement to buss all circuits to a common plating contact by using a background seed metal for plating continuity. This method also provides a means to alleviate the requirement for precise registration or alignment when multiple photoresist layers are employed in order to selectively plate only a portion of the metallic elements present on the flexible circuit board. The defect of resist lifting followed by nickel/gold underplating is eliminated by conditioning the intermediate photoresist to survive the nickel/gold plating bath.
摘要翻译：公开了一种制造柔性电路板的方法，所述柔性电路板具有仅选择性地镀在导电电路的所需元件上的金。这些期望的元件通常是用于半导体芯片的附接位置，例如引线接合焊盘或球栅阵列焊盘。该方法消除了通过使用背景种子金属将电路连接到公共电镀接触的所有电路的要求。该方法还提供了一种减轻对多个光致抗蚀剂层的精确对准或对准的要求的手段，以便仅选择性地仅对存在于柔性电路板上的金属元件的一部分进行平板化。通过调节中间光致抗蚀剂以抵抗镍/金镀层的缺陷，消除镍/金镀层的缺陷。

5. 发明授权

US06284329B1 Method of forming adherent metal components on a polyimide substrate 失效
公开(公告)号：US06284329B1
公开(公告)日：2001-09-04
申请号：US09376901
申请日：1999-08-18
申请人： Luis J. Matienzo , Kim J. Blackwell , Frank D. Egitto , Allan R. Knoll
发明人： Luis J. Matienzo , Kim J. Blackwell , Frank D. Egitto , Allan R. Knoll
IPC分类号： C23C1402
CPC分类号： B32B15/08 , B32B7/12 , B32B38/0008 , B32B2311/12 , B32B2379/08 , C23C14/022 , C23C14/205 , H05K1/0346 , H05K3/381 , H05K2201/0154 , H05K2203/065 , Y10T428/31681 , Y10T428/31721
摘要： A method for attaching adherent metal components, particularly a copper film, on at least one surface of a polyimide substrate is provided. The method comprises the steps of: exposing at least one surface of the polyimide substrate to a reactive gas plasma that provides a level of ion bombardment of the polyimide surface sufficient to disrupt at least a portion of the imide groups on the surface and to form reactive carboxylate groups, carbonyl groups and other carbon-oxygen functional groups on the surface; and then depositing a metal film onto the chemically-modified surface without intervening exposure to air. The present invention also provides a copper-coated polyimide product comprising a polyimide substrate having a substantially smooth and chemically-modified surface and a copper film directly attached to the surface, i.e., the product is free of a polymeric adhesive layer or tie coat between the surface of the polyimide substrate and the copper film.

6. 发明授权

US06515233B1 Method of producing flex circuit with selectively plated gold 失效
公开(公告)号：US06515233B1
公开(公告)日：2003-02-04
申请号：US09607977
申请日：2000-06-30
申请人： Daniel P. Labzentis , Francesco F. Marconi , Allan R. Knoll , David J. Bajkowski
发明人： Daniel P. Labzentis , Francesco F. Marconi , Allan R. Knoll , David J. Bajkowski
IPC分类号： H05K100
CPC分类号： H05K3/243 , H05K1/0393 , H05K3/108 , H05K2203/0588 , Y10T29/49117 , Y10T29/49142 , Y10T29/49155
摘要： Disclosed is a method of producing a flexible circuit board having gold selectively plated on only desired elements of the conductive circuits. These desired elements typically are attachment sites, such as wire bond pads or ball grid array pads, for semiconductor chips. This method eliminates the requirement to buss all circuits to a common plating contact by using a background seed metal for plating continuity. This method also provides a means to alleviate the requirement for precise registration or alignment when multiple photoresist layers are employed in order to selectively plate only a portion of the metallic elements present on the flexible circuit board. The defect of resist lifting followed by nickel/gold underplating is eliminated by conditioning the intermediate photoresist to survive the nickel/gold plating bath.

7. 发明授权

US06194076B1 Method of forming adherent metal components on a polyimide substrate 失效
标题翻译：在聚酰亚胺基板上形成粘附金属成分的方法
公开(公告)号：US06194076B1
公开(公告)日：2001-02-27
申请号：US08837859
申请日：1997-04-22
申请人： Luis J. Matienzo , Kim J. Blackwell , Frank D. Egitto , Allan R. Knoll
发明人： Luis J. Matienzo , Kim J. Blackwell , Frank D. Egitto , Allan R. Knoll
IPC分类号： B32B1508
CPC分类号： B32B15/08 , B32B7/12 , B32B38/0008 , B32B2311/12 , B32B2379/08 , C23C14/022 , C23C14/205 , H05K1/0346 , H05K3/381 , H05K2201/0154 , H05K2203/065 , Y10T428/31681 , Y10T428/31721
摘要： A method for attaching adherent metal components, particularly a copper film, on at least one surface of a polyimide substrate is provided. The method comprises the steps of: exposing at least one surface of the polyimide substrate to a reactive gas plasma that provides a level of ion bombardment of the polyimide surface sufficient to disrupt at least a portion of the imide groups on the surface and to form reactive carboxylate groups, carbonyl groups and other carbon-oxygen functional groups on the surface; and then depositing a metal film onto the chemically-modified surface without intervening exposure to air. The present invention also provides a copper-coated polyimide product comprising a polyimide substrate having a substantially smooth and chemically-modified surface and a copper film directly attached to the surface, i.e., the product is free of a polymeric adhesive layer or tie coat between the surface of the polyimide substrate and the copper film.
摘要翻译：提供了在聚酰亚胺基板的至少一个表面上附着粘附金属成分，特别是铜膜的方法。该方法包括以下步骤：将聚酰亚胺基底的至少一个表面暴露于反应性气体等离子体，其提供聚酰亚胺表面的离子轰击水平足以破坏表面上的至少一部分酰亚胺基团并形成反应性羧基，羰基和其他碳氧官能团; 然后将金属膜沉积在化学改性的表面上，而不会暴露于空气中。本发明还提供了一种铜包覆的聚酰亚胺产品，其包括具有基本上光滑和化学改性的表面的聚酰亚胺基底和直接附着在该表面上的铜膜，即，该产品不含聚合物粘合剂层聚酰亚胺基板的表面和铜膜。

8. 发明授权

US5461203A Electronic package including lower water content polyimide film 失效
标题翻译：电子封装包括较低含水量的聚酰亚胺薄膜
公开(公告)号：US5461203A
公开(公告)日：1995-10-24
申请号：US695883
申请日：1991-05-06
申请人： Kim J. Blackwell , Pei C. Chen , Frank D. Egitto , Allan R. Knoll , George J. Matarese , Luis J. Matienzo
发明人： Kim J. Blackwell , Pei C. Chen , Frank D. Egitto , Allan R. Knoll , George J. Matarese , Luis J. Matienzo
IPC分类号： B29C59/14 , C23C14/02 , C23C14/20 , C23C14/34 , H01L21/48 , H05K3/10 , H05K3/38 , H05K1/00
CPC分类号： B29C59/14 , C23C14/022 , C23C14/20 , H01L21/4846 , H01L21/4864 , H05K3/381 , B29K2079/00 , H05K2201/0154 , H05K2203/085 , H05K2203/095 , H05K3/108 , H05K3/388
摘要： The adhesion of chromium-copper layer to polyimide has been greatly improved by a method which provides controlled reduction, rather than total elimination, of water content in the polyimide. The electronic packaging device which incorporates the flexible circuit prepared by the method exhibits greatly improved reliability. It is believed that the invention can be used to improve the adhesion between other organic materials having moisture affinity and materials comprising in-organics or between two organic materials.
摘要翻译：通过提供聚酰亚胺中水含量的控制减少而不是完全消除的方法，铬 - 铜层对聚酰亚胺的粘附性已大大提高。结合通过该方法制备的柔性电路的电子封装装置显着提高了可靠性。据信本发明可用于改善具有水分亲和性的其它有机材料与包含有机物的材料或两种有机材料之间的粘合性。

9. 发明授权

US5288541A Method for metallizing through holes in thin film substrates, and resulting devices 失效
标题翻译：用于金属化薄膜基板中的孔的方法以及所得到的器件
公开(公告)号：US5288541A
公开(公告)日：1994-02-22
申请号：US779411
申请日：1991-10-17
申请人： Kim J. Blackwell , Pei C. Chen , Stephen E. Deliman , Allan R. Knoll , George J. Matarese , Richard D. Weale
发明人： Kim J. Blackwell , Pei C. Chen , Stephen E. Deliman , Allan R. Knoll , George J. Matarese , Richard D. Weale
IPC分类号： C23C14/04 , C23C14/20 , C23C14/54 , H01L21/48 , H05K3/40 , B32B9/00
CPC分类号： H05K3/4076 , C23C14/046 , C23C14/20 , C23C14/541 , H01L21/486 , Y10S428/901 , Y10T428/24917
摘要： A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.
摘要翻译：公开了一种将诸如铬和铜的薄晶种层气相沉积到诸如聚酰亚胺的薄膜基底中的通孔侧壁上的方法。该方法在制造诸如薄膜半导体芯片载体的装置中是有用的，其中安装在芯片载体的一个主表面上的半导体芯片电连接到接地平面和/或芯片的另一主表面上的电源导体载体通过一个或多个金属化通孔。

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