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    • 4. 发明申请
    • ELECTROPLATING METHOD FOR PRINTED CIRCUIT BOARD
    • 印刷电路板电镀方法
    • US20140098504A1
    • 2014-04-10
    • US13678973
    • 2012-11-16
    • YMT CO., LTD.
    • Sung-Wook CHUNJung Il KimYoung Kuk Kim
    • H05K3/18H05K1/09
    • H05K3/188C25D3/562C25D5/12C25D7/00H05K1/092H05K3/108H05K3/243H05K2203/0574H05K2203/0723
    • Disclosed is an electroplating method for printed circuit board. The method includes: providing a printed circuit board including a circuit pattern, a pad part on which components are mounted, a terminal part for electrical connection to an external device, and a connector part; masking the portion of the printed circuit board other than the terminal part and the connector part; dipping the printed circuit board in a nickel-tungsten alloy plating solution including a water-soluble nickel compound, a water-soluble tungsten compound, a complexing agent, and a ductility improver; forming a nickel-tungsten alloy plated layer on each of the exposed portions of the terminal part and the connector part by direct-current (DC) electroplating; and forming a gold-containing plated layer on the nickel-tungsten alloy plated layer by DC electroplating.
    • 公开了一种用于印刷电路板的电镀方法。 该方法包括:提供包括电路图案的印刷电路板,安装有部件的焊盘部分,用于与外部设备电连接的端子部分和连接器部分; 遮蔽除了端子部分和连接器部分之外的印刷电路板的部分; 将印刷电路板浸渍在包含水溶性镍化合物,水溶性钨化合物,络合剂和延展性改进剂的镍 - 钨合金电镀溶液中; 通过直流(DC)电镀在端子部分和连接器部分的每个暴露部分上形成镍 - 钨合金镀层; 并通过直流电镀在镍 - 钨合金镀层上形成含金的镀层。
    • 6. 发明申请
    • SUBSTRATE STRUCTURE, SEMICONDUCTOR PACKAGE DEVICE, AND MANUFACTURING METHOD OF SUBSTRATE STRUCTURE
    • 基板结构,半导体封装器件及基板结构的制造方法
    • US20130161809A1
    • 2013-06-27
    • US13689207
    • 2012-11-29
    • ADVANPACK SOLUTIONS PTE LTD.
    • Hwee-Seng Jimmy CHEWShoa-Siong Raymond LIM
    • H05K1/09H05K1/03H01L21/02H01L23/48
    • H01L21/4857C25D5/022C25D7/12H01L21/02697H01L21/0273H01L21/2885H01L21/486H01L23/3107H01L23/48H01L23/49838H01L23/49861H01L23/49866H01L23/49894H01L24/73H01L2224/16225H01L2224/32225H01L2224/48227H01L2224/73204H01L2224/73265H05K1/0373H05K1/09H05K1/092H05K2201/09118H05K2203/0574H01L2924/00012H01L2924/00
    • A substrate structure, a semiconductor package device and a manufacturing method of substrate structure are provided. The substrate structure comprises a conductive structure comprising a first metal layer, a second metal layer and a third metal layer. The second metal layer is disposed on the first metal layer. The third metal layer is disposed on the second metal layer. Each of the second metal layer and the third metal layer has a first surface and a second surface opposite to the first surface. The first surface of the third metal layer is connected to the second surface of the second metal layer. The surface area of the first surface of the third metal layer is larger than that of the second surface of the second metal layer.A substrate structure, semiconductor package device, and a manufacturing method of substrate structure are provided. The substrate structure includes a conductive structure, comprising a first metal layer, a second metal layer, and a third metal layer. The second metal layer is disposed on the first metal layer, and the third metal layer is disposed on the second metal layer. Each of the second metal layer and the third metal layer has a first surface and a second surface opposite to the first surface. The first surface of the third metal layer is connected to the second surface of the second metal layer. The surface area of the first surface of the third metal layer is larger than that of the second surface of the second metal layer.
    • 提供了衬底结构,半导体封装器件和衬底结构的制造方法。 衬底结构包括导电结构,其包括第一金属层,第二金属层和第三金属层。 第二金属层设置在第一金属层上。 第三金属层设置在第二金属层上。 第二金属层和第三金属层中的每一个具有与第一表面相对的第一表面和第二表面。 第三金属层的第一表面连接到第二金属层的第二表面。 第三金属层的第一表面的表面积大于第二金属层的第二表面的表面积。 提供了衬底结构,半导体封装器件和衬底结构的制造方法。 衬底结构包括导电结构,包括第一金属层,第二金属层和第三金属层。 第二金属层设置在第一金属层上,第三金属层设置在第二金属层上。 第二金属层和第三金属层中的每一个具有与第一表面相对的第一表面和第二表面。 第三金属层的第一表面连接到第二金属层的第二表面。 第三金属层的第一表面的表面积大于第二金属层的第二表面的表面积。