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1. 发明公开

US20240329515A1 BLANKMASK FOR EUV LITHOGRAPHY WITH ABSORBING FILM, AND PHOTOMASK FABRICATED WITH THE SAME 审中-公开
公开(公告)号：US20240329515A1
公开(公告)日：2024-10-03
申请号：US18456412
申请日：2023-08-25
申请人： S&S TECH Co., Ltd.
发明人： Min-Kyu PARK , Mi-Kyung WOO , Min-Kwang PARK , Chul-Kyu YANG
IPC分类号： G03F1/22
CPC分类号： G03F1/22
摘要： Blankmask for EUV lithography has a reflective film formed on a substrate and an absorbing film formed on the reflective film. The absorbing film contains tantalum (Ta) and antimony (Sb). The absorbing film has a composition ratio of Ta:Sb=2:8˜6:4 at %. The absorbing film with a high extinction coefficient (k) allows for the thin film deposition of the absorbing film, reducing the Shadowing Effect and 3D Effect.

2. 发明授权

US11579521B2 Reflective type blankmask and photomask for EUV 有权
公开(公告)号：US11579521B2
公开(公告)日：2023-02-14
申请号：US17144506
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong
IPC分类号： G03F1/24
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.

3. 发明申请

US20220066311A1 REFLECTIVE TYPE BLANKMASK FOR EUV, AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220066311A1
公开(公告)日：2022-03-03
申请号：US16951329
申请日：2020-11-18
申请人： S&S TECH Co., Ltd.
发明人： Chul-Kyu YANG , Gil-Woo KONG
IPC分类号： G03F1/24 , G03F1/58 , H01L21/033
摘要： A blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film includes at least one Mo/Si layer that includes a Mo layer and a Si layer, and at least one Ru/Si layer that includes a Ru layer and a Si layer. Interdiffusion between the respective layers forming the reflection film is suppressed in a blankmask for EUV having a reflection film. Accordingly, the reflectance of the blankmask is improved, and the decrease in reflectance due to use after the manufacturing is prevented, thereby extending the life of the photomask.

4. 发明申请

US20210208496A1 REFLECTIVE TYPE BLANKMASK AND PHOTOMASK FOR EUV 有权
公开(公告)号：US20210208496A1
公开(公告)日：2021-07-08
申请号：US17144506
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol SHIN , Jong-Hwa LEE , Chul-Kyu YANG , Gil-Woo KONG
IPC分类号： G03F1/24
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.

5. 发明授权

US09389500B2 Mask blank, photomask, and method for manufacturing same 有权
标题翻译：掩模空白，光掩模及其制造方法
公开(公告)号：US09389500B2
公开(公告)日：2016-07-12
申请号：US14377941
申请日：2012-10-26
申请人： S&S Tech Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Jong-Hwa Lee , Chul-Kyu Yang , Soon-Gi Kwon
IPC分类号： G03F1/26 , G03F1/76 , G03F1/80 , G03F1/50
CPC分类号： G03F1/26 , G03F1/32 , G03F1/50 , G03F1/76 , G03F1/80
摘要： Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.
摘要翻译：提供一种制造光掩模的方法，其中使用硬掩模膜图案作为蚀刻掩模，用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该掩模的光掩模。在该方法中，用于图形化硬掩模膜的抗蚀剂膜可以形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。因此，由于使用遮光膜图案，光密度可以维持在3.0，从而提高图案的分辨率和精度，降低负载效果，并且改善关键尺寸（CD）特征，例如CD均匀性和CD线性。

6. 发明申请

US20130288165A1 PHASE-SHIFT BLANKMASK AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：相位移BLANKMASK及其制造方法
公开(公告)号：US20130288165A1
公开(公告)日：2013-10-31
申请号：US13864624
申请日：2013-04-17
申请人： S&S TECH CO., LTD.
发明人： Kee-Soo NAM , Geung-Won KANG , Dong-Geun KIM , Jong-Won JANG , Min-Ki CHOI
IPC分类号： G03F1/26
CPC分类号： G03F1/26
摘要： Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof.Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. Accordingly, a phase-shift blankmask including a thin phase-shift layer can be provided.
摘要翻译：提供一种相移空白掩模，其中在至少两个连续层中形成相移层或多层膜，并且包含在相移层中的最上层相移层被薄形成以包含少量的氧（O），以提高其耐化学性和耐久性。因此，包括相对于含有酸和碱性材料，热去离子水或臭氧水的清洗溶液具有增强的耐化学性和耐久性的相移空白掩模，其用于重复进行的清洁过程在制造光掩模期间，可以使用具有增强的耐化学性和耐久性的最上层的相移层来提供。此外，由于具有增强的耐化学性和耐久性的最上层的相移层，可以防止在重复执行清洁处理时引起的相移层的折射率和相移程度的劣化。因此，可以提供包括薄相移层的相移空白掩模。

7. 发明申请

US20130095415A1 BLANKMASK AND PHOTOMASK USING THE SAME 有权
标题翻译： BLANKMASK和PHOTOMASK使用它
公开(公告)号：US20130095415A1
公开(公告)日：2013-04-18
申请号：US13653698
申请日：2012-10-17
申请人： S&S TECH CO., LTD.
发明人： Kee-Soo NAM , Geung-Won KANG , Jong-Hwa LEE , Chul-Kyu YANG , Soon-Gi KWON
IPC分类号： G03F1/46
CPC分类号： G03F1/46 , G03F1/80
摘要： Provided is a blankmask for a hardmask. In the blankmask, a hard film is formed by appropriately controlling contents of nitrogen and carbon therein to reduce a deviation in a critical dimension caused when an etch process is performed. A metal film is formed to a thin thickness by increasing a content of metal in a light-shielding film and reducing a content of metal in an anti-reflective film. Thus, resolution, pattern fidelity, and chemical resistance of the metal film may be improved. Also, the metal film and the hard film are formed such that a reflectivity contrast therebetween is high, thereby allowing the hard film to be easily inspected. Accordingly, the blank mask for a hardmask may be applied to a dynamic random access memory (DRAM), a flash memory, or a micro-processing unit (MPU) to have a half-pitch of 32 nm or less, and particularly, a critical dimension of 22 nm or less.
摘要翻译：提供了一个硬掩模的空白掩码。在坯料中，通过适当地控制其中的氮和碳的含量来形成硬膜，以减少当进行蚀刻工艺时引起的临界尺寸的偏差。通过增加遮光膜中的金属含量并减少抗反射膜中的金属含量，将金属膜形成为薄的厚度。因此，可以提高金属膜的分辨率，图案保真度和耐化学性。此外，金属膜和硬膜形成为使得它们之间的反射率对比度高，从而容易地检查硬膜。因此，用于硬掩模的空白掩模可以应用于动态随机存取存储器（DRAM），闪速存储器或微处理单元（MPU）以具有32nm或更小的半间距，并且特别地，临界尺寸为22nm或更小。

8. 发明公开

US20240126163A1 PHASE SHIFT BLANKMASK AND PHOTOMASK FOR EUV LITHOGRAPHY 审中-公开
公开(公告)号：US20240126163A1
公开(公告)日：2024-04-18
申请号：US18101000
申请日：2023-01-24
申请人： S&S TECH Co., Ltd.
发明人： Yong-Dae KIM , Chul-Kyu YANG , Mi-Kyung WOO
IPC分类号： G03F1/26
CPC分类号： G03F1/26
摘要： Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.

9. 发明公开

US20240126162A1 PHASE SHIFT BLANKMASK AND PHOTOMASK FOR EUV LITHOGRAPHY 审中-公开
公开(公告)号：US20240126162A1
公开(公告)日：2024-04-18
申请号：US17989425
申请日：2022-11-17
申请人： S&S TECH Co., Ltd.
发明人： Yong-Dae KIM , Jong-Hwa LEE , Chul-Kyu YANG
IPC分类号： G03F1/26 , G03F1/24
CPC分类号： G03F1/26 , G03F1/24
摘要： Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

10. 发明授权

US11815801B2 Reflective type blankmask and photomask for EUV 有权
公开(公告)号：US11815801B2
公开(公告)日：2023-11-14
申请号：US17144416
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong
IPC分类号： G03F1/24 , G03F1/58 , G03F1/40 , H01L21/033
CPC分类号： G03F1/24 , G03F1/40 , G03F1/58 , H01L21/0332 , H01L21/0337
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.

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