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1. 发明授权

US08846276B2 Blankmask and photomask using the same 有权
标题翻译： Blankmask和光掩模使用相同
公开(公告)号：US08846276B2
公开(公告)日：2014-09-30
申请号：US13653698
申请日：2012-10-17
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Jong-Hwa Lee , Chul-Kyu Yang , Soon-Gi Kwon
IPC分类号： G03F1/46 , G03F1/24 , G03F1/80
CPC分类号： G03F1/46 , G03F1/80
摘要： Provided is a blankmask for a hardmask. In the blankmask, a hard film is formed by appropriately controlling contents of nitrogen and carbon therein to reduce a deviation in a critical dimension caused when an etch process is performed. A metal film is formed to a thin thickness by increasing a content of metal in a light-shielding film and reducing a content of metal in an anti-reflective film. Thus, resolution, pattern fidelity, and chemical resistance of the metal film may be improved. Also, the metal film and the hard film are formed such that a reflectivity contrast therebetween is high, thereby allowing the hard film to be easily inspected. Accordingly, the blank mask for a hardmask may be applied to a dynamic random access memory (DRAM), a flash memory, or a micro-processing unit (MPU) to have a half-pitch of 32 nm or less, and particularly, a critical dimension of 22 nm or less.
摘要翻译：提供了一个硬掩模的空白掩码。在坯料中，通过适当地控制其中的氮和碳的含量来形成硬膜，以减少当进行蚀刻工艺时引起的临界尺寸的偏差。通过增加遮光膜中的金属含量并减少抗反射膜中的金属含量，将金属膜形成为薄的厚度。因此，可以提高金属膜的分辨率，图案保真度和耐化学性。此外，金属膜和硬膜形成为使得它们之间的反射率对比度高，从而容易地检查硬膜。因此，用于硬掩模的空白掩模可以应用于动态随机存取存储器（DRAM），闪速存储器或微处理单元（MPU）以具有32nm或更小的半间距，并且特别地，临界尺寸为22nm或更小。

2. 发明授权

US10859901B2 Pellicle for EUV lithography and method of fabricating the same 有权
公开(公告)号：US10859901B2
公开(公告)日：2020-12-08
申请号：US16111381
申请日：2018-08-24
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Chang-Hun Lee , Ju-Hee Hong , Chul-Kyun Park
IPC分类号： G03F1/22 , G03F1/62 , G03F1/64 , G03F1/38 , G03F7/20
摘要： Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.

3. 发明授权

US09551925B2 Blankmask and photomask using the same 有权
标题翻译： Blankmask和光掩模使用相同
公开(公告)号：US09551925B2
公开(公告)日：2017-01-24
申请号：US14604247
申请日：2015-01-23
申请人： S&S TECH CO., LTD
发明人： Kee-Soo Nam , Chul-Kyu Yang , Geung-Won Kang , Cheol Shin , Jong-Hwa Lee , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/48 , G03F1/26 , G03F1/80
CPC分类号： G03F1/48 , G03F1/26 , G03F1/80
摘要： A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.
摘要翻译：提供了一个空白掩码和使用它的光掩模。空白掩模可用于防止在通过形成保护膜制造光掩模之后遮光膜或相移膜的图案的横向，顶部和底部表面的厚度损失，所述保护膜具有相对于在遮光膜或相移膜上的硬膜或遮光膜的图案，可以防止在遮光膜或相移膜下形成的相移膜的损失，设置在硬膜下方的遮光膜或遮光膜的图案在洗涤过程中进行，并且在制造光掩模的方法中去除硬膜的图案的过程，从而确保厚度均匀性。

4. 发明授权

US09389500B2 Mask blank, photomask, and method for manufacturing same 有权
标题翻译：掩模空白，光掩模及其制造方法
公开(公告)号：US09389500B2
公开(公告)日：2016-07-12
申请号：US14377941
申请日：2012-10-26
申请人： S&S Tech Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Jong-Hwa Lee , Chul-Kyu Yang , Soon-Gi Kwon
IPC分类号： G03F1/26 , G03F1/76 , G03F1/80 , G03F1/50
CPC分类号： G03F1/26 , G03F1/32 , G03F1/50 , G03F1/76 , G03F1/80
摘要： Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.
摘要翻译：提供一种制造光掩模的方法，其中使用硬掩模膜图案作为蚀刻掩模，用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该掩模的光掩模。在该方法中，用于图形化硬掩模膜的抗蚀剂膜可以形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。因此，由于使用遮光膜图案，光密度可以维持在3.0，从而提高图案的分辨率和精度，降低负载效果，并且改善关键尺寸（CD）特征，例如CD均匀性和CD线性。

5. 发明授权

US10036947B2 Blankmask and photomask using the same 有权
公开(公告)号：US10036947B2
公开(公告)日：2018-07-31
申请号：US14878419
申请日：2015-10-08
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi , Chang-Jun Kim , Young-Jo Jeon
IPC分类号： G03F1/26 , G03F1/46 , G03F1/54 , G03F1/58
CPC分类号： G03F1/26 , G03F1/46 , G03F1/54 , G03F1/58
摘要： Disclosed are a blankmask and a photomask, in which compositions of metal and light elements of a light-shielding film are controlled so that the light-shielding film can guarantee a light-shielding efficiency, increase an etching speed, become thinner, and have a minimum sheet-resistance. To this end, the blankmask according to the present invention includes at least a light-shielding film on a transparent substrate, and the light-shielding film includes a first light-shielding layer adjacent to the transparent substrate and a second light-shielding layer formed on the first light-shielding layer, in which the first and the second light-shielding film contains chrome (Cr) and molybdenum (Mo).

6. 发明授权

US09851632B2 Phase-shift blankmask and photomask 有权
公开(公告)号：US09851632B2
公开(公告)日：2017-12-26
申请号：US14804568
申请日：2015-07-21
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Chul-Kyu Yang , Jong-Hwa Lee , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/26
CPC分类号： G03F1/26
摘要： Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

7. 发明授权

US09256119B2 Phase-shift blankmask and method for fabricating the same 有权
标题翻译：相移掩模及其制造方法
公开(公告)号：US09256119B2
公开(公告)日：2016-02-09
申请号：US13864624
申请日：2013-04-17
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Dong-Geun Kim , Jong-Won Jang , Min-Ki Choi
IPC分类号： G03F1/26
CPC分类号： G03F1/26
摘要： Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof.Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. Accordingly, a phase-shift blankmask including a thin phase-shift layer can be provided.
摘要翻译：提供一种相移空白掩模，其中在至少两个连续层中形成相移层或多层膜，并且包含在相移层中的最上层相移层被薄形成以包含少量的氧（O），以提高其耐化学性和耐久性。因此，包括相对于含有酸和碱性材料，热去离子水或臭氧水的清洗溶液具有增强的耐化学性和耐久性的相移空白掩模，其用于重复进行的清洁过程在制造光掩模期间，可以使用具有增强的耐化学性和耐久性的最上层的相移层来提供。此外，由于具有增强的耐化学性和耐久性的最上层的相移层，可以防止在重复执行清洁处理时引起的相移层的折射率和相移程度的劣化。因此，可以提供包括薄相移层的相移空白掩模。

8. 发明申请

US20150212403A1 MASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：掩模空白，照相机及其制造方法
公开(公告)号：US20150212403A1
公开(公告)日：2015-07-30
申请号：US14377941
申请日：2012-10-26
申请人： S&S Tech Co., Ltd.
发明人： Kee-Soo Nam , Geung-Won Kang , Jong-Hwa Lee , Chul-Kyu Yang , Soon-Gi Kwon
IPC分类号： G03F1/26 , G03F1/80 , G03F1/76
CPC分类号： G03F1/26 , G03F1/32 , G03F1/50 , G03F1/76 , G03F1/80
摘要： Provided are a method of manufacturing a photomask, in which a hardmask film pattern is used as an etch mask for etching a phase-shift layer under the hardmask film pattern, a blankmask, and a photomask using the blankmask. In the method, a resist film for patterning a hardmask film may be formed to a thin thickness, and the phase-shift layer may be etched using the hardmask film pattern having a high etch selectivity with respect to the phase-shift layer. Accordingly, an optical density may be maintained to be 3.0 due to use of a light-shielding film pattern, thereby increasing the resolution and precision of a pattern, reducing a loading effect, and improving critical dimension (CD) features, such as CD uniformity and CD linearity.
摘要翻译：提供一种制造光掩模的方法，其中使用硬掩模膜图案作为蚀刻掩模，用于蚀刻硬掩模膜图案下的相移层，空白掩模和使用该掩模的光掩模。在该方法中，用于图形化硬掩模膜的抗蚀剂膜可以形成为薄的厚度，并且可以使用相对于相移层具有高蚀刻选择性的硬掩模膜图案来蚀刻相移层。因此，由于使用遮光膜图案，光密度可以维持在3.0，从而提高图案的分辨率和精度，降低负载效果，并且改善关键尺寸（CD）特征，例如CD均匀性和CD线性。

9. 发明授权

US10768523B2 Pellicle for EUV lithography and method of fabricating the same 有权
公开(公告)号：US10768523B2
公开(公告)日：2020-09-08
申请号：US15915363
申请日：2018-03-08
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Chang-Hun Lee , Ju-Hee Hong , Chul-Kyun Park
IPC分类号： G03F1/64 , G03F7/20 , G03F1/22 , G03F1/62
摘要： Disclosed are a pellicle for an extreme ultraviolet (EUV) lithography, which is excellent in transmittance of EUV exposure light and mechanical strength, and a method of fabricating the same. The pellicle includes a support layer pattern; a buried oxide layer pattern formed on the support layer pattern; and a pellicle layer provided being supported by the buried oxide layer pattern. The pellicle may further include a reinforcement layer for reinforcing the mechanical strength of the pellicle layer, an auxiliary layer for additionally supplementing the mechanical strength of the reinforcement layer, and a heat dissipation layer for dissipating heat of the pellicle layer.

10. 发明授权

US10018905B2 Phase shift blankmask and photomask 有权
公开(公告)号：US10018905B2
公开(公告)日：2018-07-10
申请号：US14945686
申请日：2015-11-19
申请人： S&S TECH Co., Ltd.
发明人： Kee-Soo Nam , Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Min-Ki Choi , Chang-Jun Kim , Kyu-Jin Jang
IPC分类号： G03F1/26 , G03F1/58
CPC分类号： G03F1/26 , G03F1/58
摘要： Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm.To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.

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