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81. 发明授权

US08279658B2 Method of programming variable resistance element and nonvolatile storage device 有权
标题翻译：编程可变电阻元件和非易失性存储器件的方法
公开(公告)号：US08279658B2
公开(公告)日：2012-10-02
申请号：US12994462
申请日：2010-03-25
申请人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/21
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/72 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： Applying a writing voltage pulse having a first polarity to a metal oxide layer (3) to change a resistance state of the metal oxide layer (3) from high to low so as to render the resistance state a write state, applying an erasing voltage pulse having a second polarity different from the first polarity to the metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from low to high so as to render the resistance state an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer (3) before the applying of a writing voltage pulse is performed for a first time, to change a resistance value of an initial state of the metal oxide layer (3) are included, and R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer (3), and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.
摘要翻译：将具有第一极性的写入电压脉冲施加到金属氧化物层（3）以将金属氧化物层（3）的电阻状态从高变为低，以使电阻状态成为写入状态，施加擦除电压脉冲具有与第一极性不同于金属氧化物层（3）的第二极性，以将金属氧化物层（3）的电阻状态从低到高改变为使得电阻状态为擦除状态，并且施加初始电压首先执行施加写入电压脉冲之前对金属氧化物层（3）具有第二极性的脉冲，以改变金属氧化物层（3）的初始状态的电阻值，并且R0 > RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别为金属氧化物层（3）的初始，写入和擦除状态的电阻值，V0，Vw和Ve为初始，写入和写入的电压值，并分别擦除电压脉冲。

82. 发明申请

US20120230085A1 FORMING METHOD OF PERFORMING FORMING ON VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE 有权
标题翻译：形成可变电阻非易失性存储器元件和可变电阻非易失性存储器件的形成方法
公开(公告)号：US20120230085A1
公开(公告)日：2012-09-13
申请号：US13511275
申请日：2011-09-28
申请人： Ken Kawai , Kazuhiko Shimakawa , Koji Katayama , Shunsaku Muraoka
发明人： Ken Kawai , Kazuhiko Shimakawa , Koji Katayama , Shunsaku Muraoka
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2213/32 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： In forming, an automatic forming circuit (210) included in a nonvolatile memory device (200) causes a constant current IL to flow in a selected memory cell having a considerably high initial resistance. When the forming generates a filament path in the memory cell and thereby a resistance value is decreased, a potential of a node NBL and a potential of a node Nin are also decreased. If the potentials become lower than that of a reference voltage Vref, an output NO of a difference amplifier (303) for detecting forming success is activated, and a forming success signal Vfp is activated after a delay time depending on the number n of flip flops FF1 to FFn and a clock signal CLK. Thereby, a switch transistor (301) is in a non-conducting state and the forming on a variable resistance element is automatically terminated.
摘要翻译：在形成时，包括在非易失性存储器件（200）中的自动形成电路（210）使得恒定电流IL流过具有相当高的初始电阻的所选择的存储单元。当形成在存储单元中产生细丝通路并由此电阻值减小时，节点NBL的电位和节点Nin的电位也减小。如果电位变得低于参考电压Vref的电位，则激活用于检测成形成功的差分放大器（303）的输出NO，并且根据触发器的数量n在延迟时间之后激活形成成功信号Vfp FF1〜FFn和时钟信号CLK。由此，开关晶体管（301）处于非导通状态，可变电阻元件上的形成自动终止。

83. 发明授权

US08022502B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08022502B2
公开(公告)日：2011-09-20
申请号：US12307211
申请日：2008-03-26
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

84. 发明授权

US07488454B2 Microchannel structure body 有权
标题翻译：微通道结构体
公开(公告)号：US07488454B2
公开(公告)日：2009-02-10
申请号：US10548600
申请日：2004-03-18
申请人： Koji Katayama , Toru Futami
发明人： Koji Katayama , Toru Futami
IPC分类号： B01J8/00
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00835 , B01J2219/00853 , B01J2219/00873 , B01J2219/00891
摘要： A fine channel device, having an inlet opening for introducing a gas and an inlet path interconnecting with this inlet opening, a fine channel interconnecting with the inlet path, a discharge path interconnecting with the fine channel, and a discharge opening interconnecting with this discharge path. The inner diameter of the inlet path is greater than that of the fine channel, and either increases gradually, or remains identical, with increasing distance from the position where the inlet opening and the inlet path are in interconnection with each other.
摘要翻译：具有用于引入气体的入口和与该入口相互连接的入口通道的精细通道装置，与入口路径相互连接的精细通道，与微通道相互连接的放电路径以及与该排出路径互连的排出口。入口通道的内径大于细通道的内径，并且随着距离入口开口和入口路径彼此互连的位置的距离的增加而逐渐增加或保持相同。

85. 发明申请

US20080223720A1 MICROCHANNEL STRUCTURE AND FINE-PARTICLE PRODUCTION METHOD USING THE SAME 有权
标题翻译：微通道结构和微粒生产方法
公开(公告)号：US20080223720A1
公开(公告)日：2008-09-18
申请号：US11847788
申请日：2007-08-30
申请人： Maho Yamanaka , Akira Kawai , Koji Katayama , Hiroki Takamiya
发明人： Maho Yamanaka , Akira Kawai , Koji Katayama , Hiroki Takamiya
IPC分类号： G01N27/26
CPC分类号： B01F3/0807 , B01F5/0475 , B01F5/0478 , B01F13/0059 , B01F13/1013 , B01F13/1022 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00824 , B01J2219/00826 , B01J2219/00828 , B01J2219/00831 , B01J2219/00833 , B01J2219/0086 , B01J2219/00889 , B01J2219/00891 , B01J2219/00903 , Y10T137/0396
摘要： A microchannel structure including a dispersed-phase introduction channel which communicates with a dispersed-phase introduction inlet; a continuous-phase introduction channel which communicates with a continuous-phase introduction inlet; a discharge channel which communicates with a discharge outlet; a fine-particle formation channel; and a plurality of branch channels for dispersed-phase introduction which are microchannels; wherein one end of the fine-particle formation channel in a fluid traveling direction communicates with the continuous-phase introduction channel whereas the other end thereof communicates with the discharge channel; and wherein a side part of the dispersed-phase introduction channel and side part of the fine-particle formation channel communicate via the plurality of branch channel for dispersed-phase introduction.
摘要翻译：一种微通道结构，包括与分散相引入口连通的分散相导入通道; 与连续相导入口连通的连续相导入流路; 排出通道，其与排出口连通; 细颗粒形成通道; 以及用于分散相导入的多个分支通道，它们是微通道; 其特征在于，所述细粒形成流路的流体行进方向的一端与所述连续相导入流路连通，而所述微粒形成流路的另一端与所述排出流路连通。并且其中分散相导入通道的侧部和细颗粒形成通道的侧部通过多个用于分散相引入的分支通道连通。

86. 发明授权

US07338641B2 Fine channel device, desksize chemical plant and fine particle producing apparatus employing them 有权
标题翻译：精细通道装置，除草化工厂和使用它们的细粒生成装置
公开(公告)号：US07338641B2
公开(公告)日：2008-03-04
申请号：US10630847
申请日：2003-07-31
申请人： Akira Kawai , Koji Katayama , Toru Futami , Shinichi Matsumoto , Tomohiro Ohkawa , Tomoyuki Oikawa , Katsuyuki Hara
发明人： Akira Kawai , Koji Katayama , Toru Futami , Shinichi Matsumoto , Tomohiro Ohkawa , Tomoyuki Oikawa , Katsuyuki Hara
IPC分类号： B01L3/02 , B01L11/00 , B32B5/02 , B32B27/04 , B32B27/12
CPC分类号： B01F5/0646 , B01F3/0807 , B01F5/0652 , B01F13/0059 , B01F15/00032 , B01J19/0093 , B01J2219/00783 , B01J2219/0081 , B01J2219/00822 , B01J2219/00824 , B01J2219/00831 , B01J2219/00833 , B01J2219/00835 , B01J2219/0086 , B01J2219/00889 , B01J2219/00891 , B01J2219/00905 , B01J2219/00961 , B01J2219/00986 , B01J2219/0099 , Y10T436/11 , Y10T436/25 , Y10T436/25375 , Y10T436/2575
摘要： A fine channel device for performing a chemical treatment or for producing fine particles, capable of supplying a liquid to the fine channels evenly and producing products in a large quantity is provided. The fine channel device includes a storage space having a circular or polygonal recess for temporarily storing fluid, and supply channels formed in a radial direction from the storage space. A small chemical plant includes a plurality of the fine channel devices as fundamental constituents and a mechanism to supply at least one fluid and a mechanism to recover products produced.
摘要翻译：提供一种用于进行化学处理或生产细颗粒的精细通道装置，其能够均匀地向精细通道供应液体并大量生产产品。细通道装置包括具有用于临时存储流体的圆形或多边形凹槽的存储空间，以及从存储空间沿径向形成的通道。小型化工厂包括多个精细通道装置作为基本组成部分，以及提供至少一种流体和机构来回收所生产的产品的机构。

87. 发明申请

US20070203696A1 Content Distribution Server For Distributing Content Frame For Reproducing Music And Terminal 失效
标题翻译：内容分发服务器用于分发音乐和终端的内容框架
公开(公告)号：US20070203696A1
公开(公告)日：2007-08-30
申请号：US10592365
申请日：2005-03-31
申请人： Shigeyuki Sakazawa , Koichi Takagi , Hiroshi Mitsuhashi , Koji Katayama
发明人： Shigeyuki Sakazawa , Koichi Takagi , Hiroshi Mitsuhashi , Koji Katayama
IPC分类号： G10L19/02
CPC分类号： H04L12/18 , G06Q30/0601 , H04M19/04
摘要： There is provided a system capable of distributing code-compressed data based on audio data on a music composition via the Internet to a mobile telephone so that a user can cut out a desired range from the code-compressed data and register it as a call sound. The system has a data structure of a content frame (3GPP, 3GPP2) containing code-compressed data (AAC) of audio data. The content frame has at least one cut-out position information in the AAC data in its extended function section. A mobile telephone has a content storage unit, a cut-out selection unit to be used by the user to select at least one cut-out position information contained in the extended function section of the content frame, and a data cut-out section for cutting out data from the code-compressed data. The code-compressed data which has been cut out is decompressed when called and the sound is outputted from a loudspeaker.
摘要翻译：提供了一种能够经由因特网将基于音乐数据的音频数据的代码压缩数据分发到移动电话的系统，使得用户可以从代码压缩数据中切出期望的范围并将其注册为通话声音。该系统具有包含音频数据的代码压缩数据（AAC）的内容帧（3GPP，3GPP2）的数据结构。内容帧在其扩展功能部分中的AAC数据中具有至少一个切出位置信息。移动电话具有内容存储单元，切入选择单元，用于用户选择包含在内容帧的扩展功能部分中的至少一个切出位置信息，以及数据切出部分，用于从代码压缩数据中切出数据。已被切出的代码压缩数据在被呼叫时被解压缩，声音从扬声器输出。

88. 发明授权

US07201873B2 Fine channel device, method for producing the fine channel device and use of the same 有权
标题翻译：细通道装置，精细通道装置的制造方法及其使用方法
公开(公告)号：US07201873B2
公开(公告)日：2007-04-10
申请号：US10120480
申请日：2002-04-12
申请人： Tsuyoshi Tanaka , Toshinori Hayashi , Toru Futami , Koji Katayama , Akira Kawai , Keiichiro Nishizawa
发明人： Tsuyoshi Tanaka , Toshinori Hayashi , Toru Futami , Koji Katayama , Akira Kawai , Keiichiro Nishizawa
IPC分类号： G01N30/00
CPC分类号： B01L3/502707 , B01L3/545 , B01L2200/0689 , B01L2200/12 , B01L2300/0806 , B01L2300/087 , B01L2300/0887 , B01L2400/0409 , B29C33/3878 , B29C33/424 , B29C45/2632 , B29L2017/005
摘要： A device includes a first substrate having a channel formed on front and rear surfaces of the first substrate, and an information recording layer forming an optical recording medium on at least one of the front and rear surfaces of the first substrate.
摘要翻译：一种器件包括：第一衬底，其具有形成在第一衬底的前表面和后表面上的沟道;以及信息记录层，在第一衬底的前表面和后表面中的至少一个上形成光学记录介质。

89. 发明申请

US20060237732A1 Light-emitting device, method for making the same, and nitride semiconductor substrate 失效
标题翻译：发光装置及其制造方法以及氮化物半导体基板
公开(公告)号：US20060237732A1
公开(公告)日：2006-10-26
申请号：US11361144
申请日：2006-02-23
申请人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
发明人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/10157 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.
摘要翻译：提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N层3）; 与n型（n型）相比，配置在比GaN衬底1更远的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5）氮化物半导体衬底层; 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。此外，从与GaN衬底1的第一主表面相反的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。槽80包括在其上进行表面处理以平滑内周表面的部分（曲面部分）。

90. 发明授权

US07049198B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07049198B2
公开(公告)日：2006-05-23
申请号：US10377771
申请日：2003-03-04
申请人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
发明人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/1054 , H01L29/165 , H01L29/167
摘要： An S1-yGey layer (where 0
摘要翻译：按照此顺序形成S 1〜Y Ge层（其中0

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